JPH06168987A - Semiconductor package - Google Patents

Abstract

PURPOSE:To reduce an effect of flexion due to the flexibility of a film carrier and to facilitate mounting a substrate in a large-sized semiconductor package. CONSTITUTION:In a semiconductor package using a film carrier 20 to be resin sealed according to the patting method, a semiconductor element 3 is connected through a bump 4 to an inner lead 1' protruding to the inside of a device hole 12 in the film carrier 20 which comprises a lead 1 in a formed pattern and a film carrier substrate 2'. And through the lead 1 on a support ring 2, a ring- shape frame member 6 is glued to the film carrier 20 by means of an insulating adhesive 11 or the like. Thereafter, a semiconductor element 3 and its vicinity are sealed with a resin 5 according to the potting method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package using a resin-sealed film carrier potted with a resin.

[0002]

2. Description of the Related Art A TAB (Tape
The Automated Bonding method is known.

This TAB system uses a film carrier formed by forming a plurality of leads made of a conductive metal material such as copper foil on a flexible tape having flexibility and insulation made of polyimide resin or the like. This is a method in which each lead and a plurality of electrodes formed on the semiconductor element are bonded via bumps.

Here, a bottom view of the film carrier as seen from the semiconductor element side is shown in FIG. 7, and an enlarged sectional view taken along the line CC of FIG. 7 is shown in FIG. As shown in FIGS. 7 and 8,
A semiconductor element 3 is connected via a bump 4 to an inner lead 1'protruding inside a device hole 12 in a film carrier 20 composed of a lead 1 on which a pattern is formed and a film carrier substrate 2 ', In addition, the semiconductor element 3 is formed by the potting method described later.
And its vicinity are sealed with resin 5.

In the flexible tape, in addition to the device hole 12 in which the semiconductor element 3 is located, lead holes (not shown) through which the leads 1 are bridged are formed, and each lead 1 is supported. The support ring 2 and the outer peripheral frame portion (not shown) forming the outer frame of the film carrier 20 remain.

[0006] In general, resin encapsulation is performed to protect the semiconductor element in the TAB method. Conventionally, a so-called potting method or the like has been known as this resin sealing method.

In the potting method, the semiconductor element 3 is bonded to the film carrier 20 coated with the solder resist on the support ring 2 on the surface on which the leads 1 are formed, and then the thermosetting liquid resin 5 is applied by using a dispenser. The liquid resin 5 dropped and cured around the semiconductor element 3 to the inner lead portion 1 ′ is cured by resin.

[0008]

However, in the case of the potting method, the method itself is easy, but a semiconductor package using the film carrier 20 manufactured by the potting method has a large semiconductor element 3 mounted thereon. If the number of pins is large or the number of pins is large, the package size becomes large. As a result, support ring 2
Also becomes larger, and the flexibility of the film carrier 20 causes the solder resist or potting resin 5
There is a problem that the support ring 2 is bent due to the heat during the heat curing or the heat during the inner lead bonding, which deteriorates the alignment property when the semiconductor package is mounted on the substrate. Further, due to the bending of the support ring 2, there are problems such as deformation and variation of the lead 1.

The present invention has been made based on the above circumstances, and reduces the influence of bending due to the flexibility of the film carrier, and makes it possible to easily mount a semiconductor package having a large package size on a substrate. Intended to provide the package.

[0010]

In order to achieve the above object, the semiconductor package of the present invention is mounted on a film base material, a plurality of leads formed on the film base material, and the film base material. A semiconductor package of a resin encapsulation type having a semiconductor element and potted with a resin, and a support for reinforcing the support ring on a support ring for fixing the leads of the film base material. It is provided with a ring reinforcing means.

The support ring reinforcing means may be formed on the support ring via the leads.

[0012]

According to the present invention having the above-described structure, by providing the reinforcing means on the support ring of the resin-sealed semiconductor package by the potting method, the inner lead bonding process can be performed even in a large-sized semiconductor package. It is possible to prevent the support ring from being bent by heat due to heat, etc., and it is possible to easily mount the semiconductor package on the substrate with a high yield, thereby significantly improving the productivity.

Further, by adhering a plate-shaped heat dissipation member having the same area as the outer periphery of the frame member to the frame member or to the back surface of the semiconductor element, the mechanical strength of the semiconductor package body is significantly increased, and at the same time, the semiconductor element is generated from the semiconductor element. It is also possible to improve the heat dissipation effect of the generated heat. Further, even if the concave heat dissipation member is adhered, the mechanical strength of the semiconductor package body is also remarkably increased, and at the same time, the heat dissipation effect of heat generated from the semiconductor element can be improved.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIGS. FIG. 1 is a bottom view of a semiconductor package according to a first embodiment, and FIG. 2 is a view taken along the line AA of FIG. 1 in a state where a semiconductor element is mounted on a film carrier of the semiconductor package and resin-sealed by a potting method. It is an expanded sectional view. In addition, the same reference numerals are given to substantially the same components as those of the conventional example, and the description thereof will be omitted.

As shown in FIG. 2, in the semiconductor package of the first embodiment of the present invention, inside the device hole 12 in the film carrier 20 consisting of the lead 1 and the film carrier base material 2'on which the pattern is formed. The semiconductor element 3 is connected to the protruding inner lead 1 ′ through the bump 4 by the inner lead bonding process. Here, as shown in FIGS. 1 and 2, after inner lead bonding such as thermocompression bonding is performed, the semiconductor element 3
The ring-shaped frame member 6 is formed on the support ring 2 located near the inner side of the outer lead 1 ″ on the side of the outer lead 1 ″ through the lead 1. The frame member 6 is made of a resin such as an epoxy resin or a metal such as aluminum. And is adhered to the film carrier 20 using an insulating adhesive 11 etc. At this time, the support ring 2 is bent by heating during inner lead bonding, but the frame member 6 is adhered and reinforced. The semiconductor element 3 and its vicinity are sealed with resin 5 by the potting method.

According to the present embodiment configured as described above, after the semiconductor element 3 is inner lead-bonded to the film carrier 20 via the bump 4, the resin or metal is placed on the support ring 2 via the lead 1. Since the ring-shaped frame member 6 is formed, the leads 1 can be fixed, and the bending of the support ring 2 caused by heat in the inner lead bonding process or the like can be prevented or corrected.

Although the frame member 6 is adhered immediately after the inner lead bonding is performed in the above-mentioned embodiment, the time of adhering is not limited to the above-mentioned embodiment, and may be performed before the inner lead bonding step or by the potting method. The same effect can be obtained by adhering after resin sealing.

Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 3 is an enlarged cross-sectional view showing a state in which a semiconductor element is mounted on the film carrier of the semiconductor package of the second embodiment and resin-sealed by the potting method.
In addition, the same reference numerals are given to substantially the same components as those of the conventional example, and the description thereof will be omitted.

In the second embodiment, after mounting the semiconductor element 3 on the film carrier 20 as in the first embodiment, inner lead bonding is performed, the frame member 6 is adhered, and resin sealing is performed by the potting method. To do. The difference from the first embodiment is that the frame member 6 is bonded to the support ring 2 as a reinforcing means by using an insulating adhesive 11 or the like.

According to the present embodiment configured as described above, after the semiconductor element 3 is inner lead bonded to the film carrier 20 via the bump 4, the support ring 2 is formed into a ring shape made of resin or metal. Since the frame member 6 is formed, the leads 1 can be fixed, and the bending of the support ring 2 caused by heat in the inner lead bonding process or the like can be prevented or corrected.

In the above embodiment as well, the timing of adhering the frame member 6 is not limited to immediately after the inner lead bonding of the above embodiment, but before the inner lead bonding step or resin sealing by the potting method. Similar effects can be obtained even if they are bonded later.

Next, a third embodiment of the present invention will be described with reference to FIGS. 4 is a bottom view of a film carrier of a semiconductor package according to a third embodiment, and FIG. 5 is a view taken along the line BB in FIG. 4 in a state where a semiconductor element is mounted on the film carrier and resin-sealed by a potting method. It is an expanded sectional view. In addition, the same reference numerals are given to substantially the same components as those of the conventional example, and the description thereof will be omitted.

In the third embodiment, as in the first embodiment, after mounting the semiconductor element 3 on the film carrier 20, inner lead bonding is performed and the frame member 7 and the heat sink 8 are adhered to each other by the potting method. Resin sealing. The difference from the first embodiment is that, as a reinforcing means, a ring-shaped frame member 7 having a height equal to or higher than the thickness of the semiconductor element 3 is adhered to the support ring 2 via the lead 1 via an insulating adhesive. Then, the heat radiating plate 8 having an area equal to the outer peripheral area of the frame member 7 is bonded to the semiconductor element 3 using the adhesive 9 having excellent thermal conductivity.
3 is used to adhere to the frame member 7. The frame member 7 is made of an epoxy resin or a metal such as aluminum, and the heat dissipation plate 8 is made of a metal such as aluminum.

According to the present embodiment configured as described above, after mounting the semiconductor element 3 on the film carrier 20 and performing inner lead bonding, it is made of resin or metal via the lead 1 on the support ring 2. Since the ring-shaped frame member 7 is formed, it is possible to fix the lead 1 and prevent or correct the bending of the support ring 2 caused by heat in the bonding process or the like. Further, since the heat dissipation plate 8 is adhered to the frame member 7 and the semiconductor element 3, the heat dissipation effect of the heat generated from the semiconductor element 3 is enhanced,
The mechanical strength of the semiconductor package body is significantly improved.

In the above embodiment as well, the timing of adhering the frame member 7 is not limited to the time immediately after the inner lead bonding of the above embodiment is carried out, and the same applies when adhering after resin sealing by the potting method. The effect is obtained.

Next, a fourth embodiment of the present invention will be described with reference to FIG. FIG. 6 is an enlarged sectional view of the semiconductor package of the fourth embodiment. The bottom view as seen from the semiconductor element side is the same as that of the third embodiment as shown in FIG. In addition, the same reference numerals are given to substantially the same components as those of the conventional example, and the description thereof will be omitted.

In the fourth embodiment, as in the third embodiment, after mounting the semiconductor element 3, inner lead bonding is performed, the heat dissipation member 10 is adhered to the film carrier 20, and resin sealing is performed by the potting method. To do. The difference from the third embodiment is that the frame member 7 and the heat dissipation plate 8 serve as reinforcing means.
That is, the concave heat dissipation member 10 in which is integrated is formed. After mounting the semiconductor element 3 on the film carrier 20 and performing inner lead bonding, the heat dissipation member 10 made of metal such as aluminum is adhered onto the support ring 2 via the lead 1. At this time, the heat dissipation member 1
An insulating adhesive 11 or the like is used to bond 0 onto the support ring 2 via the lead 1, and an adhesive 9 having excellent thermal conductivity is used to bond the semiconductor chip 3 to the semiconductor element 3.

According to the present embodiment configured as described above, after mounting the semiconductor element 3 on the film carrier 20 and performing inner lead bonding, a concave type made of metal is formed on the support ring 2 via the lead 1. Heat dissipation member 10
Since the lead 1 is formed, it is possible to fix the lead 1 and prevent the support ring 2 from bending due to heat in the bonding process and the like, and enhance the heat dissipation effect of the heat generated from the semiconductor element 3. Furthermore, the mechanical strength of the semiconductor package body is significantly improved.

In the above embodiment as well, the heat dissipation member 1
The time of bonding 0 is not limited to immediately after the inner lead bonding of the above-described embodiment, and the same effect can be obtained by bonding after resin sealing by the potting method.

The present invention is not limited to the above-mentioned embodiments, and the same effects can be obtained with the structure having the structure intended by the present invention.

[0031]

As described above, according to the present invention,
In a semiconductor package that is resin-sealed by the potting method, by providing a reinforcing means on the support ring, it is possible to prevent the support ring from bending due to heat even in a semiconductor package with a large package size, and mounting the semiconductor package on the substrate. Can be performed easily and with a high yield, and the productivity can be significantly improved.

Further, the mechanical strength of the semiconductor package body due to the external pressure is remarkably improved.

[Brief description of drawings]

FIG. 1 is a bottom view of a semiconductor package according to a first embodiment of the present invention viewed from a semiconductor device surface.

FIG. 2 is an enlarged sectional view taken along the line AA of FIG.

FIG. 3 is an enlarged sectional view of a semiconductor package according to a second embodiment of the present invention.

FIG. 4 is a bottom view of a semiconductor package according to a third embodiment of the present invention as viewed from a semiconductor device surface.

5 is an enlarged cross-sectional view taken along the line BB of FIG.

FIG. 6 is an enlarged sectional view of a semiconductor package according to a fourth embodiment of the present invention.

FIG. 7 is a bottom view of a conventional semiconductor package viewed from the semiconductor element surface.

8 is an enlarged cross-sectional view taken along the line CC of FIG.

[Explanation of symbols]

 1 Lead 2 Support Ring 2'Film Carrier Substrate 3 Semiconductor Element 5 Resin 6 Frame Member 7 Frame Member 8 Heat Sink 10 Heat Dissipator 20 Film Carrier

Claims (8)

[Claims] 1. A resin-encapsulated semiconductor having a film base material, a plurality of leads formed on the film base material, and a semiconductor element mounted on the film base material and potted with a resin. A semiconductor package, comprising: a support ring for fixing the leads of the film base material; and support ring reinforcing means for reinforcing the support ring. 2. The semiconductor package according to claim 1, wherein the support ring reinforcing means is formed on the support ring via the leads. 3. The semiconductor package according to claim 1, wherein the support ring reinforcing means comprises a ring-shaped frame member. 4. The semiconductor package according to claim 3, wherein the frame member is made of resin or metal. 5. The semiconductor package according to claim 1, wherein the support ring reinforcing means includes a ring-shaped frame member and a plate-shaped heat dissipation member that covers the frame member. 6. The semiconductor package according to claim 5, wherein the heat dissipation member is made of metal. 7. The semiconductor package according to claim 1, wherein the support ring reinforcing means is a concave heat dissipation member. 8. The semiconductor package according to claim 7, wherein the concave heat dissipation member is made of metal.