JPH06164110A - Method for forming au conductor on ceramic wiring board - Google Patents
Method for forming au conductor on ceramic wiring boardInfo
- Publication number
- JPH06164110A JPH06164110A JP32899492A JP32899492A JPH06164110A JP H06164110 A JPH06164110 A JP H06164110A JP 32899492 A JP32899492 A JP 32899492A JP 32899492 A JP32899492 A JP 32899492A JP H06164110 A JPH06164110 A JP H06164110A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- ceramic
- wiring board
- plating
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 85
- 239000000919 ceramic Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims description 30
- 238000007747 plating Methods 0.000 claims abstract description 40
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 27
- 238000010304 firing Methods 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 39
- 239000010408 film Substances 0.000 description 32
- 239000000243 solution Substances 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミック配線基板上
へAu導体を形成させる方法に関し、特にAu導体を高密度
に形成させる方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an Au conductor on a ceramic wiring board, and more particularly to a method for forming an Au conductor at a high density.
【０００２】Au導体は、高信頼性を要する配線導体又は
端子電極として用いられる。例えば半導体ベアチップを
ワイヤーボンディング実装するときのAuワイヤー電極
や、半導体ベアチップをフリップチップ実装するときの
バンプ電極に用いられる。Au conductors are used as wiring conductors or terminal electrodes that require high reliability. For example, it is used for an Au wire electrode when mounting a semiconductor bare chip by wire bonding, and a bump electrode when mounting a semiconductor bare chip by flip chip mounting.
【０００３】[0003]
【従来の技術】セラミック配線基板上にAu導体を形成さ
せる方法として代表的な方法は、セラミック配線基板に
厚膜Auペーストを所定の配線パターンになるようにスク
リーン印刷し、乾燥した後、酸化雰囲気中、 600〜900
℃で焼成することによりAu導体を形成せしめる方法であ
る。2. Description of the Related Art A typical method for forming an Au conductor on a ceramic wiring board is to screen-print a thick film Au paste on a ceramic wiring board so that a predetermined wiring pattern is formed, and then dry it in an oxidizing atmosphere. Medium, 600-900
This is a method of forming an Au conductor by firing at ℃.
【０００４】また、Au導体を薄膜やめっきにて形成する
方法も行なわれている。例えば、セラミック基板表面を
酸性液で粗面化し、触媒付与し、次いで無電解Niめっき
を施し、その上にAuめっきを施した後、所定の配線パタ
ーンになるように、フォトリソグラフィ技術によってAu
導体を形成させる方法がある。A method of forming an Au conductor by a thin film or plating is also used. For example, the surface of a ceramic substrate is roughened with an acid solution, a catalyst is applied, electroless Ni plating is then applied, and then Au plating is applied.
There is a method of forming a conductor.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、半導体
ベアチップを実装する際に必要なAu電極ピッチは 150μ
m と狭いため、電極間を配線する導体パターン及び導体
間隔は75μm 以下が必要となる。従来法によるAu導体の
形成は、スクリーン印刷法では、Au導体のパターン幅は
75μm 程度が限界であり、より微細な配線パターンを形
成させることは困難であり、また、基板との密着強度を
確保するため、ある程度のAu厚膜が必要となり、材料費
の大幅増加につながる等の問題を抱えている。However, the Au electrode pitch required for mounting a semiconductor bare chip is 150 μm.
Since it is as narrow as m, the conductor pattern for wiring between electrodes and the conductor spacing must be 75 μm or less. With the conventional method for forming Au conductors, the screen width of Au conductors is
Since the limit is about 75 μm, it is difficult to form finer wiring patterns, and a certain amount of Au thick film is required to secure the adhesion strength with the substrate, which leads to a significant increase in material cost. Have a problem.
【０００６】薄膜やめっきにて形成する方法では、基板
との密着強度を確保するために基板上に異種金属層を設
ける必要があり、工程がより複雑となる。In the method of forming by thin film or plating, it is necessary to provide a dissimilar metal layer on the substrate in order to secure the adhesion strength with the substrate, and the process becomes more complicated.
【０００７】[0007]
【課題を解決するための手段】発明者らは、より簡易な
工程でセラミック配線基板上へAu導体を形成する方法に
ついて検討を重ねた結果、セラミック基板表面に厚膜Cu
ペーストにより所定のパターンを形成せしめ、無電解Au
めっき液を用いてCu導体パターン全体もしくは一部をAu
めっきしてAu導体を形成せしめる方法が最適であること
を見出し、本発明を完成させた。[Means for Solving the Problems] As a result of repeated studies on a method of forming an Au conductor on a ceramic wiring substrate by a simpler process, the inventors have found that a thick film Cu is formed on the surface of the ceramic substrate.
Form a predetermined pattern with paste, and use electroless Au
Use a plating solution to remove all or part of the Cu conductor pattern from Au.
The inventors have found that the method of plating to form an Au conductor is optimal, and have completed the present invention.
【０００８】すなわち本発明は、セラミック配線基板表
面に厚膜Cuペーストを用いて、所定の配線パターンをス
クリーン印刷又はディスペンサにて塗布し、乾燥し、非
酸化雰囲気において 600〜750 ℃で焼成した後、該Cu導
体パターン全体もしくは一部の表面を無電解Auめっき液
を用いてAuめっきすることを特徴とするセラミック配線
基板上へのAu導体形成方法である。That is, according to the present invention, a thick wiring Cu paste is used on the surface of a ceramic wiring board to apply a predetermined wiring pattern by screen printing or a dispenser, followed by drying and firing at 600 to 750 ° C. in a non-oxidizing atmosphere. A method for forming an Au conductor on a ceramic wiring board, characterized in that the whole or a part of the surface of the Cu conductor pattern is Au-plated using an electroless Au plating solution.
【０００９】スクリーン印刷及びディスペンサ塗布に用
いる厚膜Cuペーストは、本発明では慣用の手段や市販の
ペーストを採用することができ、特に制限されない。The thick film Cu paste used for screen printing and dispenser coating may be a conventional means or a commercially available paste in the present invention and is not particularly limited.
【００１０】セラミック配線基板上への厚膜Cu導体パタ
ーン形成方法としては、厚膜Cuペーストをスクリーン印
刷又はディスペンサ塗布し、焼成し、所定の導体パター
ンに形成する方法と、厚膜Cuペーストをスクリーン印刷
にて塗布し、焼成した後、さらにフォトリソグラフィ技
術を用いて、より微細なCu導体パターンを形成する方法
とがある。As a method for forming a thick film Cu conductor pattern on a ceramic wiring substrate, a method for forming a predetermined conductor pattern by screen printing or dispenser coating of a thick film Cu paste and firing, and a method for screening a thick film Cu paste There is a method of forming a finer Cu conductor pattern using a photolithography technique after applying by printing and baking.
【００１１】セラミック基板上にスクリーン印刷又はデ
ィスペンサ塗布により形成された厚膜Cuペーストを焼成
するには、解放型ベルト焼成炉を用い、酸素濃度が 100
ppmに調節された窒素ガス中で、ピーク温度 500〜750
℃の範囲内に 5分間保持し、且つ全工程が30分となるプ
ロファイルで焼成を行なう。ここで焼成雰囲気ガス中の
酸素濃度が 100pm以上では、Cuの酸化が進み、導体抵抗
の増加やAuめっきの不良などの問題が生じるおそれがあ
る。To fire the thick film Cu paste formed on the ceramic substrate by screen printing or dispenser coating, an open type belt firing furnace is used and the oxygen concentration is 100%.
Peak temperature 500 to 750 in nitrogen gas adjusted to ppm
Hold in the range of ℃ for 5 minutes, and perform firing in the profile that the whole process takes 30 minutes. Here, when the oxygen concentration in the firing atmosphere gas is 100 pm or more, oxidation of Cu proceeds, which may cause problems such as increase in conductor resistance and defective Au plating.
【００１２】フォトリソグラフィ技術を用いてより微細
なCu導体パターンを形成させる方法としては、フォトレ
ジストをCu導体表面に施し、微細なパターンのフォトマ
スクを介して露光してフォトレジストをパタ−ニング
し、パターニングされたフォトレジストをマスクにCu導
体をエッチングすることにより、フォトマスクと同等な
微細にパターニングされたCu導体を得ることができる。As a method of forming a finer Cu conductor pattern using the photolithography technique, a photoresist is applied to the Cu conductor surface, and the photoresist is patterned by exposing through a photomask having a fine pattern. By etching the Cu conductor using the patterned photoresist as a mask, a finely patterned Cu conductor equivalent to the photomask can be obtained.
【００１３】セラミック配線基板上への厚膜Cuペースト
の塗布は、多量少品種で塗布面積が大きい製品はスクリ
ーン印刷が有利であり、少量多品種で塗布面積が小さい
製品の製造にはディスペンサ塗布の方が有利となる。As for the coating of the thick film Cu paste on the ceramic wiring board, screen printing is advantageous for a large amount of a small number of products having a large coating area, and dispenser coating is used for manufacturing a small amount of a large number of products having a small coating area. Is more advantageous.
【００１４】上記の方法によって形成されたCu導体パタ
ーンを、無電解Auめっき液中に浸漬することにより、Cu
導体表面に容易にAuめっきを施すことができる。By dipping the Cu conductor pattern formed by the above method in an electroless Au plating solution, Cu
Au plating can be easily applied to the conductor surface.
【００１５】Auめっきに用いる無電解Auめっき液は、Au
イオンのCuとの置換反応によってAuめっき形成可能なめ
っき液で、めっき液の水素イオン濃度はpH＝ 4〜8 の範
囲内であることが必要である。この理由として、無電解
Auめっき液は、セラミック配線基板表面に形成したポー
ラスな厚膜Cu導体中へ容易に浸透する。したがって、強
酸・強アルカリ性を示す無電解Auめっき液でめっきを行
った場合には、ポーラスな厚膜Cu導体中のセラミック配
線基板と厚膜Cu導体との接着を保持しているガラス成分
が浸され、厚膜Cu導体の接着強度が劣化する。The electroless Au plating solution used for Au plating is Au
It is a plating solution that can form Au plating by the substitution reaction of ions with Cu, and the hydrogen ion concentration of the plating solution must be within the range of pH = 4 to 8. The reason for this is electroless
The Au plating solution easily penetrates into the porous thick-film Cu conductor formed on the surface of the ceramic wiring board. Therefore, when plating is performed with an electroless Au plating solution that exhibits strong acidity and strong alkalinity, the glass component that holds the adhesion between the ceramic wiring board and the thick film Cu conductor in the porous thick film Cu conductor is immersed. As a result, the adhesive strength of the thick film Cu conductor deteriorates.
【００１６】めっき液のpH調整はクエン酸又はアンモニ
ア水によって行なう。また、めっきに際してのAu析出速
度は、液温90±5 ℃、Au濃度 2〜4g/lのめっき液で0.01
μm／分である。The pH of the plating solution is adjusted with citric acid or aqueous ammonia. In addition, the Au deposition rate during plating is 0.01 ± 5 with a solution temperature of 90 ± 5 ° C and an Au concentration of 2 to 4 g / l.
μm / min.
【００１７】[0017]
【実施例】実施例１ 96％アルミナセラミック基板表面の所定箇所に、厚膜Cu
ペースト（QS190:デュポンジャパン社製）をスクリーン
印刷し、 120℃で10分間乾燥後、窒素雰囲気中、 600
℃、 5分間保持して焼成し、厚膜Cu導体を形成させた。
得られた厚膜Cu導体の焼成膜厚は17μm であった。[Example] Example 1 A thick film Cu was formed at a predetermined position on the surface of a 96% alumina ceramic substrate.
Screen-print the paste (QS190: made by DuPont Japan), dry at 120 ° C for 10 minutes, and then in a nitrogen atmosphere at 600
It was held at ℃ for 5 minutes and baked to form a thick film Cu conductor.
The baked film thickness of the obtained thick film Cu conductor was 17 μm.
【００１８】次に厚膜Cu導体の所定の箇所にAuめっきを
施すために、基板表面全体にアルカリ現像タイプのフォ
トレジストドライフィルム（PHT-887A-25:日立化成工業
社製）をラミネートし、フォトマスクを介して照射量40
ミリジュールの紫外線照射によりパターン露光を行な
い、さらに 1％-Na2CO3 水溶液にてレジストの現像を行
い、水洗後、室温乾燥した。Next, in order to apply Au plating to predetermined portions of the thick film Cu conductor, an alkali development type photoresist dry film (PHT-887A-25: manufactured by Hitachi Chemical Co., Ltd.) is laminated on the entire surface of the substrate, Dose 40 via photomask
Pattern exposure was performed by irradiating millijoules of ultraviolet rays, and the resist was further developed with a 1% -Na 2 CO 3 aqueous solution, washed with water, and dried at room temperature.
【００１９】この基板を90±5 ℃に温調した無電解Auめ
っき（ELGB511:Degussa 製）浴中に10分間浸漬し、露出
した厚膜Cu導体表面にAuめっき層を形成させた。Auめっ
き浴のpHは 5.0〜5.3 、そのAu濃度は4g/lで、得られた
Auめっき膜の厚さは約 0.1μm であった。Auめっき後、
不要なフォトレジストを 2.5％NaOH水溶液にて除去し、
所定のAu導体の形成されたセラミック配線基板を得た。This substrate was immersed in an electroless Au plating (ELGB511: made by Degussa) temperature-controlled at 90 ± 5 ° C. for 10 minutes to form an Au plating layer on the exposed thick film Cu conductor surface. The pH of the Au plating bath was 5.0 to 5.3, and the Au concentration was 4 g / l.
The Au plating film had a thickness of about 0.1 μm. After Au plating,
Remove unnecessary photoresist with 2.5% NaOH aqueous solution,
A ceramic wiring board on which a predetermined Au conductor was formed was obtained.
【００２０】上記の実施例に基づいたセラミック配線基
板へのAu導体形成方法を説明したフローを、図１に示
す。FIG. 1 is a flow chart showing a method for forming an Au conductor on a ceramic wiring board based on the above embodiment.
【００２１】接着強度の測定 本実施例にて形成したAu導体の基板への接着強度を以下
によって測定した。Measurement of Adhesive Strength The adhesive strength of the Au conductor formed in this example to the substrate was measured as follows.
【００２２】図３に示すように、基板５上に形成した 2
mm□のAu導体パッド６に、 0.8mmφの錫めっき銅線８を
共晶はんだ７を用いてはんだ付し、はんだ付け後、錫め
っき銅線８をAu導体パッドより 1mm離したところで基板
面に対して垂直方向に折曲げ、引張り速度1cm/分で錫め
っき銅線を垂直方向へ引張り、基板とAu導体パッドが剥
離したときの強度をプルゲージにて測定した。As shown in FIG. 3, 2 formed on the substrate 5
A 0.8 mmφ tin-plated copper wire 8 is soldered onto the mm □ Au conductor pad 6 using eutectic solder 7, and after the soldering, the tin-plated copper wire 8 is placed 1 mm away from the Au conductor pad on the substrate surface. On the contrary, the tin-plated copper wire was pulled vertically at a pulling speed of 1 cm / min, and the strength when the substrate and the Au conductor pad were peeled off was measured with a pull gauge.
【００２３】測定された接着強度を図２に示す。比較の
ため、AuめっきのないCu導体での結果も比較例１として
示した。The measured adhesive strength is shown in FIG. For comparison, the results for Cu conductors without Au plating are also shown as Comparative Example 1.
【００２４】ボンディング引張強度の測定 Au導体上に 2mm間隔で引いた線内に、線と垂直の方向に
25μm 径のAuワイヤーを用いてワイヤーボンディングを
行なった試料を作製し、テンションゲージの先端フック
部分をワイヤーボンディングしたワイヤーの頂点に引っ
掛け、真上方向に毎秒 0.2〜0.5mm の速度で引っ張り、
ワイヤー又はボンディング部で切れた時の値をボンディ
ング引張強度とした。Measurement of Bonding Tensile Strength Within the line drawn at 2 mm intervals on the Au conductor, in the direction perpendicular to the line.
A wire-bonded sample was prepared using a 25 μm diameter Au wire, the tip hook part of the tension gauge was hooked on the apex of the wire-bonded wire, and pulled right above at a speed of 0.2 to 0.5 mm per second.
The value at the time of breaking at the wire or the bonding portion was taken as the bonding tensile strength.
【００２５】図４には、上記実施例にて形成したAu導体
へのAu線ワイヤーのボンディング引張リ強度を評価した
結果を示す。比較のため、市販の厚膜Auペーストにて形
成したAu導体上へのボンディング引張り強度の評価も比
較例２として示した。FIG. 4 shows the results of evaluation of the bonding tensile strength of the Au wire to the Au conductor formed in the above embodiment. For comparison, evaluation of bonding tensile strength on an Au conductor formed of a commercially available thick film Au paste is also shown as Comparative Example 2.
【００２６】実施例２ 96％アルミナセラミック基板表面の所定箇所に、厚膜Cu
ペースト（QS190:デュポンジャパン社製）をスクリーン
印刷し、 120℃で10分間乾燥後、窒素雰囲気中、 600℃
で 5分間保持して焼成し、厚膜Cu導体を形成させた。こ
の時の厚膜Cu導体の焼成膜厚は17μm であった。Example 2 A thick film of Cu was formed at a predetermined position on the surface of a 96% alumina ceramic substrate.
Screen-print a paste (QS190: made by DuPont Japan), dry at 120 ° C for 10 minutes, and then in a nitrogen atmosphere at 600 ° C.
It was held for 5 minutes and baked to form a thick film Cu conductor. The baked film thickness of the thick Cu conductor at this time was 17 μm.
【００２７】次に、基板表面全体にアルカリ現像タイプ
のフォトレジストドライフィルム（PHT-887A-25:日立化
成工業社製）をラミネートし、フォトマスクを介して照
射量40ミリジュールの紫外線照射によりパターン露光を
行った。次いで 1％Na2CO3水溶液にてレジストの現像を
行い、室温乾燥後, 露出した厚膜Cu導体を35〜40％の塩
化第二鉄水溶液でエッチングを行った。不要なフォトレ
ジストを 2.5％NaOH水溶液にて除去し、線幅がそれぞれ
30、45、60及び75μm の厚膜Cu導体をセラミック配線基
板表面に形成せしめた。Next, an alkali development type photoresist dry film (PHT-887A-25: manufactured by Hitachi Chemical Co., Ltd.) is laminated on the entire surface of the substrate, and a pattern is formed by irradiating an ultraviolet ray having an irradiation dose of 40 millijoules through a photomask. It was exposed. Next, the resist was developed with a 1% Na 2 CO 3 aqueous solution, dried at room temperature, and the exposed thick film Cu conductor was etched with a 35-40% ferric chloride aqueous solution. Unnecessary photoresist is removed with 2.5% NaOH aqueous solution, and the line width is
Thick film Cu conductors of 30, 45, 60 and 75 μm were formed on the surface of the ceramic wiring board.
【００２８】次に上記の各厚膜Cu導体の所定の箇所にAu
めっきを施すために、基板表面全体にアルカリ現像タイ
プのフォトレジストドライフィルム（PHT-887A-25:日立
化成工業社製）をラミネートし、フォトマスクを介して
照射量40ミリジュールの紫外線照射によりパターン露光
を行なった。次いで 1％Na2CO3水溶液にてレジストの現
像を行い、水洗後、室温乾燥した。Next, Au is applied to a predetermined portion of each of the above thick film Cu conductors.
In order to perform plating, an alkali-development type photoresist dry film (PHT-887A-25: made by Hitachi Chemical Co., Ltd.) is laminated on the entire surface of the substrate, and a pattern is obtained by irradiating with 40 mJoule of ultraviolet light through a photomask It was exposed. Next, the resist was developed with a 1% Na 2 CO 3 aqueous solution, washed with water, and dried at room temperature.
【００２９】上記基板を90±5 ℃に温調した無電解Auめ
っき（ELGB511:Degussa 製）浴（pH5.0〜5.3 、Au濃度
1〜4g/l）中に10分間浸漬し、露出した厚膜Cu導体表面
に約0.1 μm のAuめっき層を形成させた。Electroless Au plating (ELGB511: Degussa) bath (pH 5.0 to 5.3, Au concentration) with the above substrate temperature controlled at 90 ± 5 ° C.
1 to 4 g / l) for 10 minutes to form an Au plating layer of about 0.1 μm on the exposed thick film Cu conductor surface.
【００３０】Auめっき後、不要なフォトレジストを 2.5
％NaOH水溶液にて除去し、所定のAu導体が形成されたセ
ラミック配線基板を得た。形成されたAu導体の線幅はそ
れぞれ30、45、60、 100μm であり、セラミック配線基
板への微細なAu導体の形成が可能であった。After Au plating, remove unnecessary photoresist by 2.5.
% NaOH aqueous solution to obtain a ceramic wiring board having a predetermined Au conductor formed thereon. The line widths of the formed Au conductors were 30, 45, 60, and 100 μm, respectively, and it was possible to form fine Au conductors on the ceramic wiring board.
【００３１】実施例３ アルミナ・ホウケイ酸鉛ガラス（50〜50重量％）を主成
分としたセラミックグリーンシート（日本セメント社
製）をドクターブレード法により作製したのち、一定の
大きさに裁断し、さらにパンチングによってグリーンシ
ートの所定箇所にスルーホールを形成した。Example 3 A ceramic green sheet (made by Nippon Cement Co., Ltd.) containing alumina-lead borosilicate glass (50 to 50% by weight) as a main component was prepared by the doctor blade method, and then cut into a certain size, Further, punching was performed to form through holes at predetermined locations on the green sheet.
【００３２】スルーホール充填用Agペースト（6141D:デ
ュポンジャパン社製）及び内部配線用Agペースト（NAG-
202:日本セメント社製）をそれぞれスクリーン印刷し、
それらのグリーンシートを積層し、熱プレスにより一体
化した後、得られた積層体を空気中で 850℃に10分間保
持して焼成し、低温焼成セラミック多層配線基板を得
た。Through-hole filling Ag paste (6141D: made by DuPont Japan) and internal wiring Ag paste (NAG-
202: Made by Nippon Cement Co., Ltd.) by screen printing,
After stacking these green sheets and integrating them by hot pressing, the obtained laminated body was held in air at 850 ° C. for 10 minutes and fired to obtain a low temperature fired ceramic multilayer wiring board.
【００３３】実施例１と同様の方法で、所定のAu導体を
低温焼成セラミック多層配線基板上に形成した。この基
板の概略断面図を図５に示す。形成されたAu導体の基板
への接着強度は図２に示すように比較例のCu導体と同等
の接着強度を有する。In the same manner as in Example 1, a predetermined Au conductor was formed on the low temperature fired ceramic multilayer wiring board. A schematic sectional view of this substrate is shown in FIG. The adhesive strength of the formed Au conductor to the substrate has the same adhesive strength as the Cu conductor of the comparative example, as shown in FIG.
【００３４】[0034]
【発明の効果】本発明によれば、接着強度がCu導体と同
等で信頼性に優れた微細なAu導体が形成されたセラミッ
ク配線基板を、低コススト且つ簡易な方法で提供でき
る。また、半導体ベアチップを実装する際のダイボンデ
ィング及びワイヤーボンディング用電極としてもAu導体
を使用することができる。According to the present invention, it is possible to provide a ceramic wiring board on which a fine Au conductor having adhesive strength equal to that of a Cu conductor and excellent in reliability is formed by a low cost and simple method. Also, the Au conductor can be used as an electrode for die bonding and wire bonding when mounting a semiconductor bare chip.
【図１】本発明の実施例１におけるセラミック配線基板
上のへのAu導体形成方法の説明図である。FIG. 1 is an explanatory diagram of a method for forming an Au conductor on a ceramic wiring board according to a first embodiment of the present invention.
【図２】Au導体の基板への接着強度を示すグラフであ
る。FIG. 2 is a graph showing the adhesive strength of an Au conductor to a substrate.
【図３】接着強度の評価試料の概略図である。FIG. 3 is a schematic view of an adhesive strength evaluation sample.
【図４】セラミック配線基板上に形成したAu導体上への
Au線ワイヤーボンディングの引張強度の測定結果であ
る。[Fig. 4] On an Au conductor formed on a ceramic wiring board
It is the measurement result of the tensile strength of Au wire wire bonding.
【図５】実施例３の低温焼成セラミック多層配線基板の
断面図である。5 is a cross-sectional view of a low temperature fired ceramic multilayer wiring board of Example 3. FIG.
１ アルミナセラミック基板 ２ 厚膜Cu導体 ３ レジスト ４ Auめっき（Au導体） ５ 基板 ６ Au導体 ７ はんだ ８ 錫めっき銅線 ９ 低温焼成セラミック多層配線基板 １０ スルーホール充填Ag導体 １１ 内部配線Ag導体 １２ 厚膜Cu導体 １３ Auめっき（Au導体） 1 Alumina Ceramic Substrate 2 Thick Film Cu Conductor 3 Resist 4 Au Plating (Au Conductor) 5 Substrate 6 Au Conductor 7 Solder 8 Tin Plated Copper Wire 9 Low Temperature Firing Ceramic Multilayer Wiring Board 10 Through Hole Filling Ag Conductor 11 Internal Wiring Ag Conductor 12 Thickness Membrane Cu conductor 13 Au plating (Au conductor)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高橋 繁 東京都江東区清澄１−２−23 日本セメン ト株式会社中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shigeru Takahashi 1-2-23, Kiyosumi, Koto-ku, Tokyo Inside Japan Central Co., Ltd.
Claims (3)
せる方法において、セラミック基板表面に厚膜Cuペース
トを用いて、所定の配線パターンをスクリーン印刷又は
ディスペンサにて塗布し、乾燥し、非酸化雰囲気におい
て 600〜750℃で焼成した後、該Cu導体パターン全体も
しくは一部の表面を無電解Auめっき液を用いてAuめっき
することを特徴とするセラミック配線基板上へのAu導体
形成方法。1. A method for forming an Au conductor on a ceramic wiring board, wherein a predetermined wiring pattern is applied by screen printing or a dispenser using a thick film Cu paste on the surface of the ceramic board, dried, and then in a non-oxidizing atmosphere. The method for forming an Au conductor on a ceramic wiring board, comprising: performing Au plating on the whole or a part of the Cu conductor pattern using an electroless Au plating solution after firing at 600 to 750 ° C.
スクリーン印刷し、乾燥し、非酸化雰囲気において 600
〜750 ℃で焼成した後、フォトリソグラフィ技術を用い
て線幅75μm 以下のCu導体パターンを形成し、該Cu導体
パターン全体もしくは一部の表面を無電解Auめっき液を
用いてAuめっきすることを特徴とするセラミック配線基
板上へのAu導体形成方法。2. A thick film Cu paste is screen-printed on the surface of a ceramic substrate, dried, and then dried in a non-oxidizing atmosphere.
After firing at ~ 750 ℃, using a photolithography technique to form a Cu conductor pattern with a line width of 75μm or less, the whole or a part of the surface of the Cu conductor pattern is Au plated using an electroless Au plating solution. A method for forming an Au conductor on a characteristic ceramic wiring substrate.
る低温焼成セラミック多層配線基板である、請求項１又
は２に記載のセラミック配線基板上へのAu導体形成方
法。3. The method for forming an Au conductor on a ceramic wiring board according to claim 1, wherein the ceramic substrate is a low temperature fired ceramic multilayer wiring board having an Ag-based internal conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32899492A JPH06164110A (en) | 1992-11-16 | 1992-11-16 | Method for forming au conductor on ceramic wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32899492A JPH06164110A (en) | 1992-11-16 | 1992-11-16 | Method for forming au conductor on ceramic wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06164110A true JPH06164110A (en) | 1994-06-10 |
Family
ID=18216422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32899492A Pending JPH06164110A (en) | 1992-11-16 | 1992-11-16 | Method for forming au conductor on ceramic wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06164110A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001119128A (en) * | 1999-08-11 | 2001-04-27 | Mitsuboshi Belting Ltd | Method of making ceramics circuit board |
| WO2003084297A1 (en) * | 2002-03-28 | 2003-10-09 | Shinko Electric Industries Co., Ltd. | Wiring structure and its manufacturing method |
| CN104735905A (en) * | 2013-12-19 | 2015-06-24 | 通用汽车环球科技运作有限责任公司 | Thick film circuits with conductive components formed using different conductive elements and related methods |
| CN115551195A (en) * | 2022-11-28 | 2022-12-30 | 四川斯艾普电子科技有限公司 | SRD comb spectrum generator based on thick-film multilayer circuit and preparation method thereof |
-
1992
- 1992-11-16 JP JP32899492A patent/JPH06164110A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001119128A (en) * | 1999-08-11 | 2001-04-27 | Mitsuboshi Belting Ltd | Method of making ceramics circuit board |
| JP4503792B2 (en) * | 1999-08-11 | 2010-07-14 | 三ツ星ベルト株式会社 | Manufacturing method of ceramic circuit board |
| WO2003084297A1 (en) * | 2002-03-28 | 2003-10-09 | Shinko Electric Industries Co., Ltd. | Wiring structure and its manufacturing method |
| CN104735905A (en) * | 2013-12-19 | 2015-06-24 | 通用汽车环球科技运作有限责任公司 | Thick film circuits with conductive components formed using different conductive elements and related methods |
| CN115551195A (en) * | 2022-11-28 | 2022-12-30 | 四川斯艾普电子科技有限公司 | SRD comb spectrum generator based on thick-film multilayer circuit and preparation method thereof |
| CN115551195B (en) * | 2022-11-28 | 2023-03-14 | 四川斯艾普电子科技有限公司 | Thick-film multilayer circuit based SRD comb spectrum generator and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3421989A1 (en) | METHOD FOR METALLIZING CERAMIC SURFACES | |
| JPH0463838B2 (en) | ||
| US4963389A (en) | Method for producing hybrid integrated circuit substrate | |
| JPH06164110A (en) | Method for forming au conductor on ceramic wiring board | |
| JPH06224538A (en) | Manufacture of ceramic circuit board | |
| JPH03124091A (en) | Manufacture of thick-film printed board | |
| JPH04144190A (en) | Circuit board and manufacture thereof | |
| JP2002198461A (en) | Plastic package and its manufacturing method | |
| JPH06244307A (en) | Manufacture of low temperature firing multilayered ceramic circuit board | |
| JPH06204645A (en) | Manufacture of ceramic circuit board | |
| JPH0722732A (en) | Forming method for microwiring | |
| JPH01262691A (en) | Manufacture of ceramic printed wiring board | |
| JPH0745931A (en) | Formation of fine wiring and conductor paste used in formation thereof | |
| JPH07336019A (en) | Forming method of conductor pattern | |
| JPH04363093A (en) | Manufacture of printed board | |
| JPH05235114A (en) | Manufacture of metal-coated polyimide board | |
| JPS59161896A (en) | Ceramic board | |
| JP2002064260A (en) | Method of manufacturing circuit board | |
| JPS5938314B2 (en) | Method of plating thick film paste | |
| JPH04357895A (en) | Manufacture of ceramic wiring board | |
| JPH03161956A (en) | Wiring board for loading semiconductor element and manufacture thereof | |
| JPH073910B2 (en) | Manufacturing method of ceramic wiring substrate | |
| JPH03141662A (en) | Manufacture of ceramic wiring circuit board | |
| JPS6285496A (en) | Manufacture of printed circuit board | |
| JPH1051110A (en) | Printed-wiring board and semiconductor device using it |