JPH06163736A - Package for housing semiconductor element - Google Patents

Abstract

PURPOSE:To provide a package for housing semiconductor elements that can normally and stably operate a semiconductor element for a long period by effectively absorbing and removing the heat generating by the semiconductor element and preventing an insulating container from generating cracks and breakage absolutely. CONSTITUTION:On the outer surface of an insulation substrate 1 including a semiconductor element 3, a metallic member 9 containing Kovar or invar is bonded and fixed by means of a bonding material 10 that will be melted or thermoset under a temperature lower than the displacement point of Kovar or invar.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to an improvement of a semiconductor device housing package for housing a semiconductor integrated circuit device.

[0002]

2. Description of the Related Art In recent years, as the performance and speed of information processing apparatuses have increased, the density and integration of semiconductor elements forming the information processing apparatuses have rapidly increased. Therefore, the unit area of the semiconductor element,
The amount of heat generated per unit volume increases, and the semiconductor element is
In addition, how to efficiently remove the heat is a problem for stable operation.

Conventionally, as a method of removing the heat generated by a semiconductor element, the semiconductor element is formed by depositing a metallized metal layer on the outer surface of an insulating container made of an aluminum oxide sintered body, and copper or the like is formed on the metallized metal layer. The metal member made of the above metal is housed in a semiconductor element housing package having a structure in which a brazing material such as silver wax is attached, and the heat generated from the semiconductor element is absorbed by the metal member and the absorbed heat is stored in the atmosphere. It is done by dissipating it.

However, in the conventional package for accommodating semiconductor elements, the insulating container is made of an aluminum oxide sintered body and has a coefficient of thermal expansion of 6.5 to 7.5 × 10 ⁻⁶ / ° C., whereas a metal member is formed. The thermal expansion coefficient of copper is 14.0-
20.0 × 10 ^-6 / ℃, which is a big difference between the insulating container and the metal member, for example, when the heat generated during the operation of the semiconductor element is repeatedly applied, both the insulating container and the metal member attachment portion There is a drawback that a large thermal stress is generated due to the difference in the coefficient of thermal expansion, and the thermal stress causes cracks and breaks in the insulating container. Therefore, in this conventional package for housing a semiconductor element, the hermetic sealing of the semiconductor element housed inside is broken in a short time, and the semiconductor element cannot be operated normally and stably for a long period of time.

In order to solve the above-mentioned drawbacks, therefore, the metal member may be changed to copper and the aluminum oxide sintered body forming the insulating container may be made of a metal material having a thermal expansion coefficient similar to that of Kovar metal or Invar alloy. Conceivable.

[0006]

However, a Kovar metal or Invar alloy has a coefficient of thermal expansion similar to that of an aluminum oxide sintered body at a temperature below its transition point (about 430 ° C.), but a temperature exceeding the transition point. Then, the thermal expansion coefficient of the aluminum oxide sintered body becomes so large that it does not match the thermal expansion coefficient of the aluminum oxide sintered body. Therefore, when the metal member is formed of a metal material containing Kovar metal or Invar alloy, when the metal member is attached to the metallized metal layer provided on the outer surface of the insulating container via the silver solder, the melting temperature of the silver brazing material is About 900 ℃ and the transition point of Kovar metal and Invar alloy (about
Since the temperature exceeds 430 ℃), a large thermal stress is generated in the attachment part between the insulating container and the metal member due to the difference in thermal expansion coefficient between the two, and the thermal stress causes cracks or cracks in the insulating container. Will end up.

Therefore, even if the metal member is formed of a metal material containing Kovar metal or Invar alloy, the insulating container is still cracked or broken, and the semiconductor element housed therein can be operated normally and stably for a long period of time. There is a problem that it cannot be done.

[0008]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and an object thereof is to absorb and remove the heat generated by a semiconductor element well and to accommodate the occurrence of no cracks or breaks in the insulating container. It is an object of the present invention to provide a package for accommodating a semiconductor element, which can operate the semiconductor element normally and stably for a long period of time.

[0009]

According to the present invention, there is provided a package for accommodating a semiconductor element, wherein a metal member containing Kovar metal or Invar alloy is provided on the outer surface of an insulating container for accommodating a semiconductor element, the transition point of the Kovar metal or Invar alloy being below It is characterized in that it is joined and attached via a joining material that melts or thermosets at the temperature of.

[0010]

According to the package for housing a semiconductor device of the present invention, a metal member containing Kovar metal or Invar alloy on the outer surface of an insulating container is melted or thermoset at a temperature below the transition point of the Kovar metal or Invar alloy. Since it is attached via the bonding material, during attachment, a large thermal stress does not occur between the insulating container and the metal member,
It is possible to firmly attach the metal member to the insulating container without causing cracks or breaks in the insulating container.

[0011]

EXAMPLES Next, the present invention will be described in detail based on examples. 1 and 2 show one embodiment of a package for housing a semiconductor device of the present invention, 1 is an insulating base made of an electrically insulating material, and 2 is a lid. The insulating base 1 and the lid 2 form a container 4 for housing the semiconductor element 3.

The insulating substrate 1 has a semiconductor element 3 on its upper surface.
The semiconductor element 3 is bonded and fixed to the bottom surface of the recess 1a through an adhesive such as glass, resin, or brazing material.

The insulating substrate 1 is made of an aluminum oxide sintered body, such as alumina (Al ₂ O ₃ ) or silica (SiO ₂ ).
₂ ), calcia (CaO), magnesia (MgO), etc., by adding and mixing an appropriate organic solvent and solvent to form a slurry, and by adopting the conventionally known doctor blade method or calendar roll method, a ceramic green sheet (Ceramic green sheet) is formed, and thereafter, the ceramic green sheet is appropriately punched, laminated with a plurality of sheets, and fired at a high temperature (about 1600 ° C.).

A plurality of metallized wiring layers 5 extending from the periphery of the recess 1a to the outside of the container 4 are formed on the insulating base 1, and the recesses 1a of the metallized wiring layer 5 are formed.
Electrodes of the semiconductor element 3 are electrically connected to the peripheral side via bonding wires 6, and external lead terminals 7 connected to an external electric circuit are connected to an external electrical circuit at a portion led out of the container 4 with silver solder. It is attached through a brazing material such as.

The metallized wiring layer 5 serves to electrically connect the electrodes of the semiconductor element 3 to the external lead terminals 7 and is made of a refractory metal powder such as tungsten, molybdenum, or manganese. Insulation is performed by applying a suitable organic solvent, a metal paste obtained by adding and mixing the solvent to a ceramic green sheet that becomes the insulating substrate 1 in advance by applying a thick film method such as the well-known screen printing method. It is formed so as to be led out from the periphery of the recess 1a of the base 1 to the outside of the container 4.

The metallized wiring layer 5 is formed by depositing a metal such as nickel or gold, which has excellent corrosion resistance and wettability with a brazing material, to a thickness of 1.0 to 20.0 μm on the exposed surface by a plating method. This makes it possible to effectively prevent oxidative corrosion of the metallized wiring layer 5 and to firmly braze the external lead terminals 7 to the metallized wiring layer 5. Therefore, it is preferable to deposit nickel, gold or the like on the exposed surface of the metallized wiring layer 5 to a thickness of 1.0 to 20.0 μm.

A metallized metal layer 8 is attached to the lower surface of the insulating substrate 1, and a metal member 9 is attached to the metallized metal layer 8 via a bonding material 10.

The metallized metal layer 8 acts as a base metal layer for attaching the metal member 9 to the insulating substrate 1, and is made of a refractory metal powder such as tungsten, molybdenum or manganese.

The metallized metal layer 8 is formed by the same method as that for the metallized wiring layer 4, specifically, a metal paste obtained by adding an appropriate organic solvent to a powder of tungsten or the like and mixing the solvent with a conventionally known screen printing method or the like. Adopting the thick film method of
The ceramic green sheet to be the insulating substrate 1 is printed and applied in advance to be adhered and formed on the lower surface of the insulating substrate 1.

The metal member 9 attached to the metallized metal layer 8 is formed of a metal material containing Kovar metal, Invar alloy, or the like, and the metal member 9 is a semiconductor element.
The thermal expansion coefficient generated by 3 is satisfactorily absorbed and is diffused into the atmosphere to prevent the semiconductor element 3 from being thermally destroyed or having its characteristics changed and malfunctioning.

The metal member 9 is, for example, as shown in FIG. 2A, a plate member 9a made of Kovar metal or Invar alloy.
With two copper plates 9b sandwiched from above and below, or
As shown in 2 (b), two metal plates 9c, 9c made of Kovar metal or Invar alloy and having a plurality of through holes, a copper member 9d is partially provided in the metal plate 9c. A structure having a structure in which it is sandwiched while being press-fitted therein is preferably used.

The metal member 9 shown in FIG. 2 (a) is, for example, iron 54.0% by weight, nickel 29.0% by weight, cobalt 17
A copper plate 9b is placed on the top and bottom of a Kovar metal 9a made of a weight% alloy, and this is put on a rolling roller.
The metal member 9 shown in FIG. 2 (b) is manufactured by pressing with a pressure of g / cm ² or more.For example, a Kovar metal plate 9c having a plurality of through holes is arranged above and below a copper member 9d. ,
After that, this is rolled at a pressure of 150 Kg / cm ² or more, and a part of the copper member 9d is press-fitted into the through hole of the Kovar metal plate 9c to manufacture.

Further, since the metal member 9 is formed of a metal material containing Kovar metal, Invar alloy, etc., its coefficient of thermal expansion is 5.6 to 7.6 × 10 ⁻⁶ / ° C., and the aluminum oxide forming the insulating substrate 1 is formed. It is close to the coefficient of thermal expansion of the quality sintered body. Therefore, even if heat generated during the operation of the semiconductor element 3 is applied to the insulating base 1 and the metal member 9, no large thermal stress is generated in the attachment portion between the two, and the insulating base 1 is not cracked or broken. It does not occur.

Further, the metal member 9 is attached to the metallized metal layer 8 adhered to the lower surface of the insulating substrate 1 via the bonding material 10, whereby the metal member 9 is attached to the insulating substrate 1. Become.

As the bonding material 10 for attaching the metal member 9 to the metallized metal layer 8 of the insulating substrate 1, a gold-based solder material or an aluminum-silicon solder material is preferably used.
Since the melting temperature of the gold-based solder material and the aluminum-silicon solder material is lower than the transition point of the Kovar metal or Invar alloy contained in the metal member 9,
When 9 is attached to the metallized metal layer 8 adhered to the insulating base 1 via the bonding material 10, the metal member 9 does not undergo a large thermal expansion as compared with the insulating base 1, and as a result, both No large thermal stress is generated in the attachment portion, and it is possible to attach the metal member 9 to the insulating substrate 1 extremely firmly without any cracks or fractures in the insulating substrate 1.

The joining material 10 is not limited to the above-described gold-based brazing material or aluminum-silicon brazing material, and its melting temperature is lower than the transition point of the Kovar metal or Invar alloy contained in the metal member 9. Any brazing material may be used as long as it has a temperature, and a resin adhesive having a thermosetting temperature of epoxy resin, glass polyimide or the like lower than the transition point of the Kovar metal or Invar alloy contained in the metal member 9. May be When the bonding material 10 is made of a resin adhesive such as epoxy resin, it is not necessary to deposit the metallized metal layer 8 on the insulating base 1 in advance.
The metal member 9 may be directly attached to the lower surface of 1 via the bonding material 10.

Thus, in the above-mentioned package for accommodating semiconductor elements, the semiconductor element 3 is made of glass on the bottom surface of the concave portion 1a of the insulating substrate 1.
The electrodes of the semiconductor element 3 are connected to the metallized wiring layer 5 via the bonding wires 6 while being adhered and fixed via an adhesive such as resin or brazing material, and then the lid 2 is attached to the upper surface of the insulating substrate 1 by glass. The semiconductor element 3 is joined by a sealing material such as resin or a brazing material, and the semiconductor element 3 is hermetically housed in the container 4 including the insulating base 1 and the lid 2.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.

[0029]

According to the package for housing a semiconductor device of the present invention, a metal member containing Kovar metal or Invar alloy is melted or heated at a temperature below the transition point of the Kovar metal or Invar alloy on the outer surface of the insulating container. Since it is attached via a hardening bonding material, no large thermal stress is generated between the insulating container and the metal member, and there is no crack or breakage in the insulating container. It becomes possible to firmly attach the metal member. Therefore, in the semiconductor element housing package of the present invention, the semiconductor element housed inside is completely hermetically sealed, and the semiconductor element can be operated normally and stably for a long period of time.

Further, since the metal member is firmly attached to the insulating container, even if a large amount of heat is generated during operation of the semiconductor element, the heat is well dissipated into the atmosphere through the metal member,
As a result, the semiconductor element is always at a low temperature, which also allows the semiconductor element to operate normally and stably for a long period of time.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

2A and 2B are partial perspective views for explaining a metal member used in the package shown in FIG.

[Explanation of symbols]

 1 ... Insulating substrate 2 ... Lid 3 ... Semiconductor element 4 ... Container 9 ... Metal member 10 ... Bonding material

Claims (1)

[Claims] 1. A metal member containing Kovar metal or Invar alloy on the outer surface of an insulating container for housing a semiconductor element,
A package for accommodating a semiconductor device, characterized in that the semiconductor device is bonded and attached through a bonding material that melts or thermosets at a temperature below the transition point of the Kovar metal or Invar alloy.