JPH06163554A - Production of substrate for optical element - Google Patents

Production of substrate for optical element

Info

Publication number
JPH06163554A
JPH06163554A JP4311843A JP31184392A JPH06163554A JP H06163554 A JPH06163554 A JP H06163554A JP 4311843 A JP4311843 A JP 4311843A JP 31184392 A JP31184392 A JP 31184392A JP H06163554 A JPH06163554 A JP H06163554A
Authority
JP
Japan
Prior art keywords
micro
ausn
foil
bumps
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4311843A
Other languages
Japanese (ja)
Other versions
JPH0773107B2 (en
Inventor
Hiroshi Honmo
宏 本望
Masataka Ito
正隆 伊藤
Junichi Sasaki
純一 佐々木
Yoshinobu Kanayama
義信 金山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4311843A priority Critical patent/JPH0773107B2/en
Publication of JPH06163554A publication Critical patent/JPH06163554A/en
Publication of JPH0773107B2 publication Critical patent/JPH0773107B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Punching Or Piercing (AREA)
  • Mounting, Exchange, And Manufacturing Of Dies (AREA)

Abstract

PURPOSE:To allow formation of micro-bonding bumps having similar profile and weight with high reproducibility. CONSTITUTION:A ribbon type AuSn foil 3 of 50mum thick is inserted between a super steel micro-punch 1 having outer diameter of 50mum and a stainless steel die 2 having hole diameter of 60mum. The AuSn foil 3 is then punched, while being heated, by means of the micro-punch 1 thus forming a micro-AuSn bump 6 on the surface of an Au pad 5 having diameter of 60mum formed on an Si substrate 4. In this regard, the AuSn foil 3 is softened through heating and thereby chipping is retarded in the micro-AuSn bump 6 thus punched. Consequently, micro-bonding bumps having similar profile and mass can be formed with high reproducibility. This method produces micro-bonding bumps having uniform profile and weight at every punching operation and improves bonding state of optical element bonded through a plurality of micro-AuSn bumps thus increasing mounting yield.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、光通信用光モジュール
などに用いられる光素子を固定する基板の製造方法に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a substrate for fixing an optical element used in an optical module for optical communication.

【0002】[0002]

【従来の技術】光通信は、半導体レーザ(LD)、発光
ダイオード(LED)、ファトダイオード(PD)、光
変調器を始めとして、光ファイバ、光スイッチ、光アイ
ソレータ、光導波路等の能動、受動素子の高性能、高機
能化により応用範囲が拡大さるつつある。近年、この応
用範囲の一つとして一般加入者系への適用が考えられて
おり、これに伴い、光素子を搭載したモジュールの低価
格化が要求されている。モジュール低価格化の有効な手
段として、複数個の微小接合バンプを介して光素子を無
調整で基板上に実装する無調整光実装が注目されてい
る。微小接合バンプを形成する方法は、微小ポンチとダ
イスとを用いてリボン状の接合金属箔を打ち抜き、基板
上に微小接合バンプを形成するもので、微小接合バンプ
として信頼性の高いAuSnバンプを用いたものが特開
平4−152682号公報、「アレイ状光素子用サブ基
板の作製方法」に詳細に記されている。
2. Description of the Related Art Optical communications include semiconductor lasers (LDs), light emitting diodes (LEDs), photodiodes (PDs), optical modulators, active fibers such as optical fibers, optical switches, optical isolators, and optical waveguides. The range of applications is expanding due to higher performance and higher functionality of devices. In recent years, application to general subscriber systems has been considered as one of the application ranges, and along with this, there has been a demand for cost reduction of modules equipped with optical elements. As an effective means for reducing the cost of a module, unadjusted optical mounting, in which an optical element is mounted on a substrate without adjustment through a plurality of micro-junction bumps, has been attracting attention. A method of forming a micro-bonding bump is to punch a ribbon-shaped bonding metal foil using a micro-punch and a die to form a micro-bonding bump on a substrate. The details are described in Japanese Patent Application Laid-Open No. 4-152682, "Method for manufacturing sub-substrate for arrayed optical element".

【0003】[0003]

【発明が解決しようとする課題】微小ポンチとダイスと
を用いてリボン状のAuSn箔を打ち抜く場合、AuS
n材料が硬く脆いために、打ち抜き後の微小AuSnバ
ンプにカケが生じ易い。このため、打ち抜きごとの微小
接合バンプの形状、重量が異なりバンプ高さが不均一と
なる。これにより、複数個の微小接合バンプを介して接
合された光素子は、傾き、接合不良などの欠陥を生じ、
実装歩留まりが低下するという大きな問題があった。
When punching a ribbon-shaped AuSn foil by using a minute punch and a die, AuSn is used.
Since the n material is hard and brittle, chipping is likely to occur in the fine AuSn bump after punching. Therefore, the shape and weight of the micro-bonded bumps are different for each punching, and the bump heights are not uniform. As a result, the optical element bonded through the plurality of micro-bonded bumps has defects such as tilt and bonding failure,
There was a big problem that the mounting yield was lowered.

【0004】[0004]

【課題を解決するための手段】本発明の光素子用基板の
製造方法は、微小ポインチとダイスとを用いてリボン状
の接合金属を打ち抜き、基板上に微小接合バンプを形成
する光素子用基板の製造方法において、リボン状の接合
金属を加熱しながら打ち抜くことを特徴とする。
A method for manufacturing an optical element substrate according to the present invention is an optical element substrate in which a ribbon-shaped bonding metal is punched out using a minute poinch and a die to form a minute bonding bump on the substrate. In the manufacturing method described above, the ribbon-shaped joining metal is punched while being heated.

【0005】[0005]

【作用】AuSn箔を加熱することにより、AuSn材
料は軟化する。これにより、打ち抜き後の微小AuSn
バンプにはカケが生じにくく、このため、形状、重量と
もに同等な微小接合バンプを再現性良く形成することが
できる。
The AuSn material is softened by heating the AuSn foil. As a result, the minute AuSn after punching
Since the bumps are unlikely to be chipped, it is possible to reproducibly form minute bonding bumps having the same shape and weight.

【0006】[0006]

【実施例】以下、本発明について、図面を参照して説明
する。図1は、本発明の第1の実施例を示す概要図であ
る。本構成では、まず、厚さ50μmのリボン状のAu
Sn箔3を外径50μmの超鋼製微小ポンチ1と穴径6
0μmのステンレス製ダイス2の間に挿入する(図1
(a))。次に、AuSn箔3を180℃程度に加熱し
ながら微小ポンチ1をAuSn箔3に打付け、微小Au
Snバンプ6をSi基板4上に直径60μmのAuパッ
ト5表面に打ち抜く(図1(b))。加熱温度は、接合
金属の融点より100℃程度低い温度に設定するのが適
当と考えるので、AuSnの場合、融点280℃より1
00℃程度低い180ど程度に設定してある。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing a first embodiment of the present invention. In this configuration, first, a ribbon-shaped Au film with a thickness of 50 μm is used.
Sn foil 3 with micro steel punch 1 having an outer diameter of 50 μm and hole diameter 6
Inserted between 0 μm stainless steel dies 2 (Fig. 1
(A)). Next, the minute punch 1 is struck on the AuSn foil 3 while heating the AuSn foil 3 to about 180 ° C.
The Sn bump 6 is punched on the surface of the Au pad 5 having a diameter of 60 μm on the Si substrate 4 (FIG. 1B). Since it is considered appropriate to set the heating temperature to a temperature about 100 ° C. lower than the melting point of the joining metal, in the case of AuSn, the melting point is 280 ° C. or more.
The temperature is set to about 180 degrees, which is low at about 00 ° C.

【0007】加熱温度の許容範囲は、接合金属の厚さよ
り異なるが設定温度に対して±50℃程度が適当であ
る。また、加熱方法は、ダイス2を保持している支持台
にヒータが内蔵されており、ダイス2を伝達してAuS
n箔3は加熱されている。このように、AuSn箔3は
加熱により軟化しているため、打ち抜き後の微小AuS
nバンプ6にはカケが生じにくくなる。このため、形
状、質量ともに同等な微小接合バンプを再現良く形成す
ることができる。従って、打ち抜きごとの微小接合バン
プの高さは均一となり、複数個の微小AuSnバンプを
介して接合された光素子の接合状態は良好で、実装歩留
まりが向上する。
The allowable range of the heating temperature is different from the thickness of the joining metal, but it is suitable to be about ± 50 ° C. with respect to the set temperature. In addition, the heating method is that a heater is built in the support table that holds the die 2, and the AuS is transmitted by transmitting the die 2.
The n-foil 3 is heated. Thus, since the AuSn foil 3 is softened by heating, the minute AuS foil after punching
The n-bump 6 is less likely to be chipped. Therefore, minute bonding bumps having the same shape and mass can be formed with good reproducibility. Therefore, the heights of the micro-bonding bumps for each punching are uniform, the bonding state of the optical element bonded through the plurality of micro-AuSn bumps is good, and the mounting yield is improved.

【0008】以上、本実施例では微小ポンチの数を1つ
としたが、これに限定されず、多数個の微小ポンチを用
いても良い。
As described above, the number of the micro punches is one in the present embodiment, but the number is not limited to this, and a large number of micro punches may be used.

【0009】また、本実施例ではAuSn箔を加熱した
が、AuSn箔に接続した微小ポンチによる放熱を防ぐ
ために、微小ポンチも加熱しても良い。更に、打ち抜き
後の微小AuSnバンプをAuパット表面に良好に付着
させるためにAuにパットを加熱しても良い。
Although the AuSn foil is heated in this embodiment, the minute punch may also be heated in order to prevent heat radiation by the minute punch connected to the AuSn foil. Further, the pad may be heated on the Au in order to make the fine AuSn bumps after punching adhere well to the Au pad surface.

【0010】また、本実施例では加熱する手段としてヒ
ータを用いたがこれに限定されず、例えばレーザ光、白
熱光、高周波等でも良い。
Further, in the present embodiment, the heater is used as the heating means, but the heater is not limited to this. For example, laser light, incandescent light, high frequency, or the like may be used.

【0011】また、接合金属材料としてAuSnを用い
たがこれに限定されず、例えば硬くて脆い材料であるA
uSi等でも良い。
Although AuSn is used as the joining metal material, the material is not limited to AuSn. For example, a hard and brittle material A
uSi or the like may be used.

【0012】[0012]

【発明の効果】以上述べた通り、形状、重量ともに同等
な微小接合バンプを再現性良く形成することができるた
め、実装歩留まりを向上できる。
As described above, since the minute bonding bumps having the same shape and weight can be formed with good reproducibility, the mounting yield can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す概略図である。FIG. 1 is a schematic diagram showing a first embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 微小ポンチ 2 ダイス 3 AuSn箔 4 シリコン基板 5 Auパット 6 微小AuSnバンプ 1 Micro punch 2 Dice 3 AuSn foil 4 Silicon substrate 5 Au pad 6 Micro AuSn bump

───────────────────────────────────────────────────── フロントページの続き (72)発明者 金山 義信 東京都港区芝五丁目7番1号日本電気株式 会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshinobu Kanayama 5-7-1, Shiba, Minato-ku, Tokyo NEC Corporation

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 微小ポンチとダイスとを用いてリボン状
の接合金属を打ち抜き、基板上に微小接合バンプを形成
する光素子用基板の製造方法において、リボン状の接合
金属を加熱しながら打ち抜くことを特徴とする光素子用
基板の製造方法。
1. A method for manufacturing a substrate for an optical element, in which a ribbon-shaped joining metal is punched out by using a fine punch and a die to form a fine joining bump on the substrate, and the ribbon-like joining metal is punched out while being heated. A method for manufacturing a substrate for an optical element, comprising:
JP4311843A 1992-11-20 1992-11-20 Method for manufacturing optical element substrate Expired - Lifetime JPH0773107B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4311843A JPH0773107B2 (en) 1992-11-20 1992-11-20 Method for manufacturing optical element substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4311843A JPH0773107B2 (en) 1992-11-20 1992-11-20 Method for manufacturing optical element substrate

Publications (2)

Publication Number Publication Date
JPH06163554A true JPH06163554A (en) 1994-06-10
JPH0773107B2 JPH0773107B2 (en) 1995-08-02

Family

ID=18022076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4311843A Expired - Lifetime JPH0773107B2 (en) 1992-11-20 1992-11-20 Method for manufacturing optical element substrate

Country Status (1)

Country Link
JP (1) JPH0773107B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012101241A (en) * 2010-11-09 2012-05-31 Denso Corp Hole processing device and hole processing method
CN102886422A (en) * 2012-10-22 2013-01-23 安徽工业大学 Punching method for improving flanging capability of sheet
WO2014097661A1 (en) * 2012-12-22 2014-06-26 株式会社小松精機工作所 Method for producing metal powder, and metal powder
JP2014515314A (en) * 2011-05-26 2014-06-30 ジョンソン・コントロールズ・ゲー・エム・ベー・ハー Stamping method and components manufactured thereby
JP2015192053A (en) * 2014-03-28 2015-11-02 日本電気株式会社 Bump forming apparatus and method of manufacturing component with bump
CN105642765A (en) * 2015-12-29 2016-06-08 哈尔滨工业大学 Heat punching device for titanium alloy plate and punching method based on heat punching device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012101241A (en) * 2010-11-09 2012-05-31 Denso Corp Hole processing device and hole processing method
US10512962B2 (en) 2010-11-09 2019-12-24 Denso Corporation Piercing method with heating
JP2014515314A (en) * 2011-05-26 2014-06-30 ジョンソン・コントロールズ・ゲー・エム・ベー・ハー Stamping method and components manufactured thereby
US10189384B2 (en) 2011-05-26 2019-01-29 Johnson Controls Gmbh Stamping method and components produced thereby
CN102886422A (en) * 2012-10-22 2013-01-23 安徽工业大学 Punching method for improving flanging capability of sheet
WO2014097661A1 (en) * 2012-12-22 2014-06-26 株式会社小松精機工作所 Method for producing metal powder, and metal powder
JP2015192053A (en) * 2014-03-28 2015-11-02 日本電気株式会社 Bump forming apparatus and method of manufacturing component with bump
CN105642765A (en) * 2015-12-29 2016-06-08 哈尔滨工业大学 Heat punching device for titanium alloy plate and punching method based on heat punching device

Also Published As

Publication number Publication date
JPH0773107B2 (en) 1995-08-02

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