JPH06163551A - Bump electrode forming apparatus - Google Patents

Bump electrode forming apparatus

Info

Publication number
JPH06163551A
JPH06163551A JP43A JP31806692A JPH06163551A JP H06163551 A JPH06163551 A JP H06163551A JP 43 A JP43 A JP 43A JP 31806692 A JP31806692 A JP 31806692A JP H06163551 A JPH06163551 A JP H06163551A
Authority
JP
Japan
Prior art keywords
wire
capillary
ball
bump electrode
insertion hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP43A
Other languages
Japanese (ja)
Other versions
JP3296505B2 (en
Inventor
Kazuhisa Kobayashi
和久 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP31806692A priority Critical patent/JP3296505B2/en
Publication of JPH06163551A publication Critical patent/JPH06163551A/en
Application granted granted Critical
Publication of JP3296505B2 publication Critical patent/JP3296505B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Abstract

PURPOSE:To obtain a bump electrode forming apparatus equipped with a capillary for forming a substantially flat bump electrode which allows connection of external lead in stabilized state. CONSTITUTION:A ball 6 at the tip of a wire 5 is bonded onto a semiconductor pellet 7 by means of a wire bonding capellary 1 thus collapsing the ball 6 to form a substantially flat bump electrode. A recessed part 4 having substantially same diameter as the ball 6 and a height smaller than the diameter of the wire 5 is formed concentrically to a wire insertion hole 2 in the flat lower end face 3 of the capillary 1. The ball 6 is collapsed by the flat top surface (m) of the recessed part 4 thus forming a bump electrode having substantially flat top surface while reducing the amount of the ball 6 entering into the wire insertion hole 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ペレットにバン
プ電極を形成する装置で、詳しくは半導体ペレットに金
線などのワイヤをボンディングするキャピラリーを使っ
たボールボンディング法によるバンプ電極形成装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming bump electrodes on a semiconductor pellet, and more particularly to an apparatus for forming bump electrodes by a ball bonding method using a capillary for bonding a wire such as a gold wire to a semiconductor pellet.

【0002】[0002]

【従来の技術】リードフレームやTABテープなどのリ
ードが熱圧着で接続される半導体ペレット上のバンプ電
極は、小面積でも所定の高さが確保できるボールボンデ
ィング法で形成されることが多い。ボールボンディング
法は、ワイヤボンディング用キャピラリーを使って半導
体ペレット上にバンプ電極を1つずつ形成する方法で、
使用されるキャピラリーは図5または図7に示されるも
のが一般的である。
2. Description of the Related Art Bump electrodes on a semiconductor pellet to which leads such as a lead frame and a TAB tape are connected by thermocompression bonding are often formed by a ball bonding method which can secure a predetermined height even in a small area. The ball bonding method is a method of forming bump electrodes one by one on a semiconductor pellet by using a wire bonding capillary.
The capillaries used are generally those shown in FIG. 5 or 7.

【0003】図5に示されるキャピラリー(1')は、平
坦な下端面(3)の中央にワイヤ挿通孔(2)を有する。
キャピラリー(1')の外部に配置されたスプール(8)
から繰り出された金線のワイヤ(5)が、その線径より
十分に大きな内径のワイヤ挿通孔(2)を自由に貫通す
る。ワイヤ挿通孔(2)の下方に突出したワイヤ(5)の
先端部が放電トーチなどで加熱されて、ここに溶融金属
塊であるボール(6)が形成される。ボール(6)の直径
は、ワイヤ挿通孔(2)の内径の数倍である。キャピラ
リー(1')は、半導体ペレット(7)の上方で上下左右
前後に間欠移動して、半導体ペレット(7)上にボール
(6)をボンディングし、ボール(6)からワイヤ(5)
を切断分離する。その動作要領が図6(a)と(b)に
示される。
The capillary (1 ') shown in FIG. 5 has a wire insertion hole (2) at the center of a flat lower end surface (3).
Spool (8) located outside the capillary (1 ')
The wire (5) of the gold wire drawn from the wire freely penetrates the wire insertion hole (2) having an inner diameter sufficiently larger than the wire diameter. The tip of the wire (5) protruding below the wire insertion hole (2) is heated by a discharge torch or the like to form a ball (6) which is a molten metal block. The diameter of the ball (6) is several times the inner diameter of the wire insertion hole (2). The capillary (1 ') is intermittently moved upward, downward, leftward, rightward, forward and backward above the semiconductor pellet (7) to bond the ball (6) onto the semiconductor pellet (7), and the ball (6) to the wire (5).
To cut and separate. The operation procedure is shown in FIGS. 6 (a) and 6 (b).

【0004】図5に示すように、半導体ペレット(7)
の真上にキャピラリー(1')を移動させる。このときの
ボール(6)はワイヤ挿通孔(2)の下端開口に近接する
位置に保持される。キャピラリー(1')をワイヤ(5)
と共に下降させて、図6(a)に示すように、キャピラ
リー(1')の下端面(3)でボール(6)を半導体ペレッ
ト(7)に押し付け、超音波振動を加えてボール(6)を
半導体ペレット(7)上に接続する。ボール(6)は、キ
ャピラリー(1')の下端面(3)と半導体ペレット(7)
で扁平に圧潰されて所定の高さのバンプ電極(6c)と
なる。このバンプ電極(6c)上には、ボール(6)の付
根部分がキャピラリー(1')のワイヤ挿通孔(2)に埋
入した突起部(6d)が一体に形成され、突起部(6d)
上からワイヤ(5)が延びる。突起部(6d)の高さは、
ボール(6)の直径、ワイヤ挿通孔(2)の内径、ボール
ボンディング条件により決定される。
As shown in FIG. 5, semiconductor pellets (7)
Move the capillary (1 ') directly above. At this time, the ball (6) is held at a position close to the lower end opening of the wire insertion hole (2). Capillary (1 ') to wire (5)
6 (a), the ball (6) is pressed against the semiconductor pellet (7) by the lower end surface (3) of the capillary (1 '), and ultrasonic vibration is applied to the ball (6). On the semiconductor pellet (7). The ball (6) consists of the lower end surface (3) of the capillary (1 ') and the semiconductor pellet (7).
Then, it is flatly crushed to form bump electrodes (6c) having a predetermined height. On the bump electrode (6c), a projection (6d) having the root of the ball (6) embedded in the wire insertion hole (2) of the capillary (1 ') is integrally formed, and the projection (6d) is formed.
A wire (5) extends from above. The height of the protrusion (6d) is
It is determined by the diameter of the ball (6), the inner diameter of the wire insertion hole (2), and the ball bonding conditions.

【0005】次に、キャピラリー(1')が突起部(6
d)の高さより少し高い図6(b)の鎖線位置まで上昇
してから横移動して、ワイヤ(5)の切断が行われる。
このとき、キャピラリー(1')の上方にキャピラリー
(1')と一体的に配置されたクランパ(9)でワイヤ
(5)の一部が挟持されて、ワイヤ(5)がキャピラリー
(1')に繰り出されないようにしてある。この状態でキ
ャピラリー(1')を横移動させると、ワイヤ挿通孔
(2)の下端開口のエッジがワイヤ(5)の突起部(6
d)の近くにストレスを加えて、ワイヤ(5)を引き千
切る。バンプ電極(6c)の突起部(6d)上には、引き
千切られたワイヤ残り(6e)が突出する。ワイヤ切断
後、キャピラリー(1')が上昇し、キャピラリー(1')
からのワイヤ(5)が繰り出されて、ワイヤ(5)の先端
部にボール(6)が形成され、キャピラリー(1')が次
のバンプ電極形成動作に移行する。
Next, the capillary (1 ') is attached to the protrusion (6).
The wire (5) is cut by ascending to the position of the chain line in FIG. 6 (b), which is slightly higher than the height of d), and then moving laterally.
At this time, a part of the wire (5) is clamped by a clamper (9) integrally arranged with the capillary (1 ′) above the capillary (1 ′), and the wire (5) is retained by the capillary (1 ′). I'm trying not to let go. When the capillary (1 ') is moved laterally in this state, the edge of the lower end opening of the wire insertion hole (2) will be the protrusion (6) of the wire (5).
Apply stress near d) and tear off the wire (5). The stripped wire rest (6e) is projected on the protrusion (6d) of the bump electrode (6c). After cutting the wire, the capillary (1 ') rises and the capillary (1')
The wire (5) is fed out from the wire (5) to form a ball (6) at the tip of the wire (5), and the capillary (1 ') shifts to the next bump electrode forming operation.

【0006】図7に示されるキャピラリー(1'')は、
ワイヤ挿通孔(2)の下端開口の周辺に同心円状に円錐
状のテーパ凹面(11)を形成したものである。キャピラ
リー(1'')は、テーパ凹面(11)でワイヤ(5)のボー
ル(6)を半導体ペレット(7)に押圧してボンディング
する。このボールボンディングのためのキャピラリー
(1'')の動作は、上記キャピラリー(1')と同様であ
る。
The capillary (1 '') shown in FIG.
A conical tapered concave surface (11) is concentrically formed around the lower end opening of the wire insertion hole (2). The capillary (1 '') presses the ball (6) of the wire (5) against the semiconductor pellet (7) by the tapered concave surface (11) for bonding. The operation of the capillary (1 ″) for this ball bonding is the same as that of the above-mentioned capillary (1 ′).

【0007】すなわち、まず図8(a)に示すように、
キャピラリー(1'')が下降してテーパ凹面(11)でボ
ール(6)を半導体ペレット(7)に押し付け、超音波振
動を加えてボール(6)を半導体ペレット(7)上に接続
する。ボール(6)は、キャピラリー(1'')のテーパ凹
面(11)と半導体ペレット(7)で圧潰されて山形断面
のバンプ電極(6f)となる。次に、キャピラリー
(1'')がバンプ電極(6f)の高さより少し高い図8
(b)の鎖線位置まで上昇してから横移動して、ワイヤ
(5)を引き千切る。この場合もバンプ電極(6f)上に
引き千切られたワイヤ残り(6g)が突出する。
That is, first, as shown in FIG.
The capillary (1 '') descends and the ball (6) is pressed against the semiconductor pellet (7) by the tapered concave surface (11), and ultrasonic vibration is applied to connect the ball (6) onto the semiconductor pellet (7). The ball (6) is crushed by the tapered concave surface (11) of the capillary (1 ″) and the semiconductor pellet (7) to form a bump electrode (6f) having a chevron cross section. Next, the capillary (1 '') is slightly higher than the height of the bump electrode (6f).
Ascend to the position indicated by the chain line in (b) and then move laterally to cut the wire (5). In this case also, the wire rest (6g) that has been cut off protrudes on the bump electrode (6f).

【0008】[0008]

【発明が解決しようとする課題】図5のキャピラリー
(1')においては、ボールボンディング後にワイヤ
(5)を引き千切るキャピラリー(1')のワイヤ挿通孔
(2)の下端開口エッジが直角断面であるためにワイヤ
(5)の切断性が、図7のキャピラリー(1'')に比べて
良い。ところで、ワイヤ挿通孔(2)の内径をワイヤ
(5)がスムーズに通るようにワイヤ(5)の線径より十
分大きく設定されている関係から、キャピラリー(1')
でボール(6)を半導体ペレット(7)に押し付ける際の
ボール(6)のワイヤ挿通孔(2)に埋入する量が多くな
って、バンプ電極(6c)の突起部(6d)の高さが高く
なる。また、突起部(6d)が太くて、ここでワイヤ切
断することができず、ワイヤ(5)の突起部(6d)から
少し上の箇所を切断しているので、突起部(6d)上に
同程度の高さでワイヤ残り(6e)が生じる。
In the capillary (1 ') of FIG. 5, the lower end opening edge of the wire insertion hole (2) of the capillary (1') that cuts the wire (5) after ball bonding has a right-angled cross section. Therefore, the cuttability of the wire (5) is better than that of the capillary (1 ″) of FIG. By the way, since the inner diameter of the wire insertion hole (2) is set to be sufficiently larger than the wire diameter of the wire (5) so that the wire (5) can pass smoothly, the capillary (1 ')
The amount of the ball (6) embedded in the wire insertion hole (2) when the ball (6) is pressed against the semiconductor pellet (7) is increased and the height of the protrusion (6d) of the bump electrode (6c) is increased. Becomes higher. Moreover, since the protrusion (6d) is thick and the wire cannot be cut here, and the portion slightly above the protrusion (6d) of the wire (5) is cut, the protrusion (6d) cannot be cut on the protrusion (6d). The wire remains (6e) occurs at the same height.

【0009】そのため、キャピラリー(1')で半導体ペ
レット(7)上に形成されたバンプ電極(6c)に、図9
(a)の実線に示すように真上から平板状のリード(1
0)を押圧して熱圧着接続する際、バンプ電極(6c)の
上面中央に突出する突起部(6d)とワイヤ残り(6e)
がリード(10)を図9(a)の鎖線に示すように傾ける
ことがあった。このようにバンプ電極(6c)上でリー
ド(10)が傾くと、リード(10)がバンプ電極(6c)
の側方に位置ずれしたりして、両者の電気機械的接続性
が悪くなり、また、隣接するリード同士が異常接近して
リード間の耐圧不良の原因となっている。
Therefore, the bump electrodes (6c) formed on the semiconductor pellets (7) by the capillaries (1 ') are formed on the bump electrodes (6c) shown in FIG.
As shown by the solid line in (a), the flat lead (1
When pressing (0) to perform thermocompression bonding, the protrusion (6d) protruding to the center of the upper surface of the bump electrode (6c) and the wire remainder (6e)
Sometimes tilted the lead (10) as shown by the chain line in FIG. 9 (a). When the lead (10) is tilted on the bump electrode (6c) in this way, the lead (10) is changed to the bump electrode (6c).
And the electromechanical connectivity between the two becomes poor, and the adjacent leads are abnormally close to each other, which causes a poor withstand voltage between the leads.

【0010】また、図7のキャピラリー(1'')におい
ては、ボールボンディング時にテーパ凹面(11)がワイ
ヤ(5)のボール(6)を直接に押圧することから、ボー
ル(6)のワイヤ挿通孔(2)に埋入する量が少なくな
る。ところが、ボールボンディング後にワイヤ(5)を
引き千切るキャピラリー(1'')のテーパ凹面(11)の
下端開口エッジは、その断面角が鈍角であるためにワイ
ヤ(5)の切断性が悪い。また、キャピラリー(1'')で
半導体ペレット(7)上に形成されたバンプ電極(6f)
は山形断面で、その頂面にワイヤ残り(6g)が突出す
るため、図9(b)の実線に示すように真上から平板状
のリード(10)を押圧して熱圧着接続すると、図9
(b)の鎖線に示すように、バンプ電極(6f)の下向
きに傾斜する側面でリード(10)が傾き、横滑りして、
バンプ電極(6f)とリード(10)の電気機械的接続性
や、隣接するリード間の耐圧が悪くなる不具合があっ
た。
Further, in the capillary (1 '') of FIG. 7, since the tapered concave surface (11) directly presses the ball (6) of the wire (5) during ball bonding, the wire of the ball (6) is inserted. The amount embedded in the hole (2) is reduced. However, the lower end opening edge of the tapered concave surface (11) of the capillary (1 ″) that cuts off the wire (5) after ball bonding has an obtuse cross-sectional angle, and therefore the wire (5) is not easily cut. Also, the bump electrode (6f) formed on the semiconductor pellet (7) by the capillary (1 '')
Has a chevron cross section, and the wire rest (6g) protrudes on the top surface, so if the flat lead (10) is pressed from directly above as shown by the solid line in FIG. 9
As shown by the chain line in (b), the lead (10) tilts on the side surface of the bump electrode (6f) that tilts downward, and the lead (10) slides sideways.
There is a problem that the electromechanical connectivity between the bump electrode (6f) and the lead (10) and the withstand voltage between adjacent leads deteriorate.

【0011】本発明の目的とするところは、外部のリー
ドが傾かずに安定した姿勢で押圧されて接続される、略
扁平な形状のバンプ電極を形成し得るキャピラリーを備
えたバンプ電極形成装置を提供することにある。
An object of the present invention is to provide a bump electrode forming apparatus provided with a capillary capable of forming a bump electrode having a substantially flat shape, to which external leads are pressed and connected in a stable posture without tilting. To provide.

【0012】[0012]

【課題を解決するための手段】本発明は上記目的を達成
するため、キャピラリーの平坦な下端面のワイヤ挿通孔
から突出させたワイヤの先端部を溶融させて形成された
ボールを、キャピラリーの下端面で半導体ペレット上に
ボンディングして、半導体ペレット上に前記ボールによ
るバンプ電極を形成する装置において、キャピラリーの
下端面のワイヤ挿通孔周辺にワイヤ挿通孔と同心円状
で、天面がキャピラリーの下端面からワイヤの線径以下
の高さにある平坦面である凹段部を形成したことを特徴
とする。
In order to achieve the above-mentioned object, the present invention provides a ball formed by melting a tip of a wire protruding from a wire insertion hole on a flat lower end surface of a capillary under a capillary. In a device for bonding bump electrodes on semiconductor pellets at the end faces to form bump electrodes by the balls on the semiconductor pellets, a wire insertion hole is concentric with the wire insertion hole around the lower end surface of the capillary, and the top surface is the lower end surface of the capillary. It is characterized in that a concave step portion, which is a flat surface at a height equal to or smaller than the wire diameter of the wire, is formed.

【0013】[0013]

【作用】キャピラリーの平坦な下端面のワイヤ挿通孔周
辺に形成された凹段部の天面のキャピラリー下端面から
の高さを、ワイヤの線径以下と小さく設定して、キャピ
ラリーの下端面でワイヤのボールを半導体ペレットにボ
ンディングすると、ボールは先ず凹段面で押圧されて変
形してから、キャピラリーの下端面で最終的に押圧され
て扁平なバンプ電極となる。このボールボンディング時
においては、キャピラリーの凹段面にボールが変形して
埋入することによって、キャピラリーのワイヤ挿通孔に
ボールが埋入する量が少なくなり、その分、バンプ電極
の上面が略平坦化されて、より扁平なバンプ電極が形成
される。
[Function] The height of the top surface of the concave step portion formed around the wire insertion hole on the flat lower end surface of the capillary from the lower end surface of the capillary is set to be smaller than the wire diameter of the wire, and When a ball of wire is bonded to a semiconductor pellet, the ball is first pressed by the concave step surface to be deformed, and then finally pressed by the lower end surface of the capillary to form a flat bump electrode. At the time of this ball bonding, the ball is deformed and embedded in the concave step surface of the capillary, so that the amount of the ball embedded in the wire insertion hole of the capillary is reduced, and the upper surface of the bump electrode is substantially flat by that amount. The bump electrodes are flattened to form flatter bump electrodes.

【0014】[0014]

【実施例】図5のバンプ電極形成装置に本発明を適用し
た一実施例を図1に示し、以下説明する。図1のバンプ
電極形成装置の従来装置との相違点は、キャピラリー
(1)の平坦な下端面(3)の中央のワイヤ挿通孔(2)
の周辺に凹段部(4)を形成したことのみであり、他の
図5装置と同一部分には同一符号を付して説明は省略す
る。
EXAMPLE An example in which the present invention is applied to the bump electrode forming apparatus of FIG. 5 is shown in FIG. 1 and will be described below. The difference between the bump electrode forming apparatus of FIG. 1 and the conventional apparatus is that the wire insertion hole (2) at the center of the flat lower end surface (3) of the capillary (1) is used.
It is only that the concave step portion (4) is formed in the periphery of, and the same parts as those of the other device in FIG.

【0015】キャピラリー(1)の下端面(3)の凹段部
(4)は、図2に示すようにワイヤ挿通孔(2)と同心円
状に形成される。凹段部(4)の直径はワイヤ(5)のボ
ール(6)の直径程度であり、凹段部(4)の天面(m)
はキャピラリー(1)の下端面(3)と平行な平坦面であ
る。キャピラリー(1)の下端面(3)から凹段部(4)
の天面(m)までの高さhは、ワイヤ(5)の線径以下
に設定される。
The concave step portion (4) of the lower end surface (3) of the capillary (1) is formed concentrically with the wire insertion hole (2) as shown in FIG. The diameter of the concave step (4) is about the diameter of the ball (6) of the wire (5), and the top surface (m) of the concave step (4).
Is a flat surface parallel to the lower end surface (3) of the capillary (1). Concave step (4) from the bottom surface (3) of the capillary (1)
The height h to the top surface (m) of the wire is set to be less than or equal to the wire diameter of the wire (5).

【0016】図1のキャピラリー(1)は、ワイヤ(5)
のボール(6)を半導体ペレット(7)上に、次のように
ボンディングする。キャピラリー(1)とワイヤ(5)を
下降させて、キャピラリー(1)でボール(6)を半導体
ペレット(7)上に押し付け、超音波振動を加えると、
ボール(6)は図3(a)に示すように扁平に変形して
ボンディングされる。
The capillary (1) in FIG. 1 has a wire (5).
The ball (6) is bonded to the semiconductor pellet (7) as follows. When the capillary (1) and the wire (5) are lowered and the ball (6) is pressed onto the semiconductor pellet (7) by the capillary (1) and ultrasonic vibration is applied,
The ball (6) is deformed flat and bonded as shown in FIG.

【0017】すなわち、先ずボール(6)はキャピラリ
ー(1)の凹段部(4)の天面(m)で圧潰されて、ボー
ル(6)の上部が凹段部(4)に食い込む。ボール(6)
が凹段部(4)内にその外周エッジまで埋入してから、
ボール(6)の周辺下部がキャピラリー(1)の下端面
(3)で更に圧潰される。キャピラリー(1)の凹段部
(4)にボール(6)の上部が埋入することにより、ボー
ル(6)がキャピラリー(1)のワイヤ挿通孔(2)に埋
入する量が減少する。その結果、ボンディング後のボー
ル(6)は、キャピラリー(1)の凹段部(4)の天面
(m)で押圧された平坦面(n)を備えた略扁平なバン
プ電極(6a)となる。
That is, first, the ball (6) is crushed by the top surface (m) of the concave step (4) of the capillary (1), and the upper part of the ball (6) bites into the concave step (4). Balls (6)
Embedded in the concave step (4) up to its outer edge,
The lower part of the periphery of the ball (6) is further crushed by the lower end surface (3) of the capillary (1). By embedding the upper part of the ball (6) in the concave step (4) of the capillary (1), the amount of the ball (6) embedded in the wire insertion hole (2) of the capillary (1) is reduced. As a result, the ball (6) after bonding has a substantially flat bump electrode (6a) having a flat surface (n) pressed by the top surface (m) of the concave step portion (4) of the capillary (1). Become.

【0018】なお、バンプ電極(6a)の平坦面(n)
の中央には、ワイヤ挿通孔(2)に埋入した突起部(6
b)が形成されるが、この突起部(6b)はワイヤ挿通
孔(2)の跡程度の極低いものであることが、実験の結
果分かっている。
The flat surface (n) of the bump electrode (6a)
At the center of, the protrusion (6) embedded in the wire insertion hole (2)
As a result of the experiment, it is known that the protrusion (6b) is as low as the trace of the wire insertion hole (2), although b) is formed.

【0019】キャピラリー(1)でボール(6)を圧潰し
てバンプ電極(6a)を形成すると、キャピラリー(1)
が図3(b)の鎖線に示す位置まで上昇してから横移動
して、ワイヤ(5)を切断する。このときのキャピラリ
ー(1)の上昇量は、バンプ電極(6a)の突起部(6
b)の高さを少し超える程度であり、この上昇量は図5
装置の数分の1程度と微少で十分である。キャピラリー
(1)の横移動でワイヤ(5)は、凹段部(4)の天面
(m)にあるワイヤ挿通孔(2)の下端開口エッジで引
き千切られて切断される。このワイヤ(5)の切断箇所
は、バンプ電極(6a)に極近い根元部分であり、ま
た、ワイヤ(5)を直接に切断するのは、ワイヤ挿通孔
(2)の直角断面の下端開口エッジであるので、ワイヤ
(5)は容易、確実に切断される。また、ワイヤ(5)を
バンプ電極(6a)に極近い根元部分で切断するため、
バンプ電極(6a)上にはワイヤ残りがほとんどできな
い。
When the ball (6) is crushed by the capillary (1) to form the bump electrode (6a), the capillary (1) is formed.
Moves to the position shown by the chain line in FIG. 3 (b) and then moves laterally to cut the wire (5). The amount of ascent of the capillary (1) at this time depends on the protrusion (6) of the bump electrode (6a).
It is a little over the height of b), and the amount of this rise is shown in FIG.
A minute, which is a fraction of the equipment, is sufficient. By the lateral movement of the capillary (1), the wire (5) is torn and cut at the lower opening edge of the wire insertion hole (2) on the top surface (m) of the concave step (4). The cutting point of the wire (5) is a root portion very close to the bump electrode (6a), and the wire (5) is directly cut at the lower end opening edge of the right-angled cross section of the wire insertion hole (2). Therefore, the wire (5) is easily and surely cut. In addition, since the wire (5) is cut at the root portion that is very close to the bump electrode (6a),
Almost no wire remains on the bump electrode (6a).

【0020】キャピラリー(1)で形成されたバンプ電
極(6a)には、図4に示すように平板状のリード(1
0)が熱圧着接続される。バンプ電極(6a)の上面の大
部分は、キャピラリー(1)の凹段部(4)の天面(m)
で形成された平坦面(n)であり、平坦面(n)の中央
の突起部(6b)は微小突起であるので、リード(10)
は平坦面(n)上に安定に姿勢保持されて、そのままバ
ンプ電極(6a)に熱圧着接続される。
The bump electrode (6a) formed by the capillary (1) has a flat lead (1) as shown in FIG.
0) is thermocompression bonded. Most of the upper surface of the bump electrode (6a) is the top surface (m) of the concave step (4) of the capillary (1).
The flat surface (n) formed in step (6) and the central protrusion (6b) of the flat surface (n) is a minute projection, so the lead (10)
Is stably held on the flat surface (n) and is directly thermocompression-bonded to the bump electrode (6a).

【0021】[0021]

【発明の効果】本発明によれば、キャピラリーでワイヤ
のボールを半導体ペレットにボンディングするときに、
キャピラリーの下端面の凹段部にボールが圧潰されて埋
入し、その分、ボールのキャピラリーのワイヤ挿通孔に
埋入する量が減少して、ボールは最終的に上面が略平坦
な扁平バンプ電極となるので、外部のリードが傾かずに
安定した姿勢で押圧されて接続される良好な形状のバン
プ電極の形成が容易に可能な信頼性の高いバンプ電極形
成装置が提供できる。
According to the present invention, when a ball of wire is bonded to a semiconductor pellet by a capillary,
The ball is crushed and embedded in the concave stepped portion of the lower end surface of the capillary, and the amount of the ball embedded in the wire insertion hole of the capillary of the ball is reduced accordingly. Since it serves as an electrode, it is possible to provide a highly reliable bump electrode forming apparatus capable of easily forming a bump electrode having a good shape in which an external lead is pressed and connected in a stable posture without tilting.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す部分断面を含む要部の
側面図。
FIG. 1 is a side view of a main part including a partial cross section showing an embodiment of the present invention.

【図2】図1装置におけるキャピラリーの下面図。FIG. 2 is a bottom view of the capillary in the apparatus shown in FIG.

【図3】図1装置におけるキャピラリーのボールボンデ
ィング動作時の断面図で、(a)はボンディング時、
(b)はワイヤ切断時である。
FIG. 3 is a cross-sectional view of the capillaries in the apparatus shown in FIG. 1 during ball bonding operation.
(B) is when the wire is cut.

【図4】図1装置で形成されたバンプ電極のリード接続
時の断面図。
FIG. 4 is a cross-sectional view of a bump electrode formed by the device of FIG. 1 at the time of lead connection.

【図5】従来のバンプ電極形成装置の部分断面を含む要
部の側面図。
FIG. 5 is a side view of a main part including a partial cross section of a conventional bump electrode forming apparatus.

【図6】図5装置におけるキャピラリーのボールボンデ
ィング動作時の断面図で、(a)はボンディング時、
(b)はワイヤ切断時である。
6 is a cross-sectional view of the capillaries in the apparatus shown in FIG. 5 during ball bonding operation, FIG.
(B) is when the wire is cut.

【図7】他の従来のバンプ電極形成装置におけるキャピ
ラリーの部分断面を含む側面図。
FIG. 7 is a side view including a partial cross section of a capillary in another conventional bump electrode forming apparatus.

【図8】図7装置におけるキャピラリーのボールボンデ
ィング動作時の断面図で、(a)はボンディング時、
(b)はワイヤ切断時である。
FIG. 8 is a cross-sectional view of the capillaries in the apparatus shown in FIG. 7 during ball bonding operation.
(B) is when the wire is cut.

【図9】(a)は図5装置で形成されたバンプ電極のリ
ード接続時の断面図、(b)は図7装置で形成されたバ
ンプ電極のリード接続時の断面図。
9A is a cross-sectional view of the bump electrode formed by the device of FIG. 5 at the time of lead connection, and FIG. 9B is a cross-sectional view of the bump electrode formed by the device of FIG. 7 at the time of lead connection.

【符号の説明】[Explanation of symbols]

1 キャピラリー 2 ワイヤ挿通孔 3 下端面 4 凹段部 5 ワイヤ 6 ボール 6a バンプ電極 7 半導体ペレット 1 Capillary 2 Wire insertion hole 3 Bottom surface 4 Recessed step 5 Wire 6 Ball 6a Bump electrode 7 Semiconductor pellet

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 キャピラリーの平坦な下端面のワイヤ挿
通孔から突出させたワイヤの先端部を溶融させて形成さ
れたボールを、キャピラリーの下端面で半導体ペレット
上にボンディングして、半導体ペレット上に前記ボール
によるバンプ電極を形成する装置であって、 前記キャピラリーの下端面のワイヤ挿通孔周辺にワイヤ
挿通孔と同心円状で、天面がキャピラリーの下端面から
ワイヤの線径以下の高さの平坦面である凹段部を形成し
たことを特徴とするバンプ電極形成装置。
1. A ball formed by melting a tip of a wire protruding from a wire insertion hole on a flat lower end surface of a capillary is bonded onto a semiconductor pellet at the lower end surface of the capillary, and the ball is bonded onto the semiconductor pellet. A device for forming a bump electrode by the ball, which is concentric with the wire insertion hole around the wire insertion hole on the lower end surface of the capillary, and whose top surface is flat with a height equal to or smaller than the wire diameter of the wire from the lower end surface of the capillary. A bump electrode forming apparatus characterized in that a concave step portion that is a surface is formed.
JP31806692A 1992-11-27 1992-11-27 Bump electrode forming equipment Expired - Fee Related JP3296505B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31806692A JP3296505B2 (en) 1992-11-27 1992-11-27 Bump electrode forming equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31806692A JP3296505B2 (en) 1992-11-27 1992-11-27 Bump electrode forming equipment

Publications (2)

Publication Number Publication Date
JPH06163551A true JPH06163551A (en) 1994-06-10
JP3296505B2 JP3296505B2 (en) 2002-07-02

Family

ID=18095104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31806692A Expired - Fee Related JP3296505B2 (en) 1992-11-27 1992-11-27 Bump electrode forming equipment

Country Status (1)

Country Link
JP (1) JP3296505B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006558A1 (en) * 1999-07-16 2001-01-25 Matsushita Electric Industrial Co., Ltd. Package of semiconductor device and method of manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001006558A1 (en) * 1999-07-16 2001-01-25 Matsushita Electric Industrial Co., Ltd. Package of semiconductor device and method of manufacture thereof
US6780668B1 (en) 1999-07-16 2004-08-24 Matsushita Electric Industrial Co., Ltd. Package of semiconductor device and method of manufacture thereof
US7090482B2 (en) 1999-07-16 2006-08-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device package manufacturing method and semiconductor device package manufactured by the method

Also Published As

Publication number Publication date
JP3296505B2 (en) 2002-07-02

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