JPH06143350A - Forming mold - Google Patents
Forming moldInfo
- Publication number
- JPH06143350A JPH06143350A JP29851692A JP29851692A JPH06143350A JP H06143350 A JPH06143350 A JP H06143350A JP 29851692 A JP29851692 A JP 29851692A JP 29851692 A JP29851692 A JP 29851692A JP H06143350 A JPH06143350 A JP H06143350A
- Authority
- JP
- Japan
- Prior art keywords
- molding die
- gate
- opening edge
- thin film
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000000465 moulding Methods 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 abstract description 21
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- -1 nitrogen ions Chemical class 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/27—Sprue channels ; Runner channels or runner nozzles
- B29C45/2701—Details not specific to hot or cold runner channels
- B29C45/2708—Gates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/37—Mould cavity walls, i.e. the inner surface forming the mould cavity, e.g. linings
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は成形加工用金型、特に、
そのゲート口における開口縁部の強化に関する。BACKGROUND OF THE INVENTION The present invention relates to a molding die, and more particularly,
Regarding the reinforcement of the opening edge at the gate opening.
【０００２】[0002]
【従来の技術】従来、成形加工用金型は、図７ないし図
９に示すように、キャビティ１を形成する成形加工用金
型であるコア２，３，４，５のうち、ゲート６を有する
コア３、特に、そのゲート口６ａの開口縁部６ｂにおけ
る摩耗，破損を防止するため、ゲート口６ａ周囲の表面
３ａに薄膜層７をＣＶＤ（Ｃhemical Ｖapor Ｄepositi
on）法またはＰＶＤ（Ｐhysical Ｖapor Ｄeposition）
法で形成することにより、成形加工用金型であるコア３
の耐衝撃性，耐摩耗性の向上が図られている。2. Description of the Related Art Conventionally, as shown in FIGS. 7 to 9, a molding die has a gate 6 of a core 2, 3, 4, 5 which is a molding die for forming a cavity 1. In order to prevent abrasion and damage of the core 3 which is included, in particular, the opening edge portion 6b of the gate opening 6a, a thin film layer 7 is formed on the surface 3a around the gate opening 6a by CVD (Chemical Vapor Deposition).
on) method or PVD (Physical Vapor Deposition)
Core 3 which is a mold for molding by being formed by the method
The impact resistance and wear resistance are improved.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来例
にかかる金型は、そのゲート口６ａの開口縁部６ｂが鋭
角であるので、高温，高圧の条件下で射出成形が何度も
反復して行なわれると、成形材中に含まれるガラス繊維
等によって開口縁部６ｂが摩耗，破損しやすく、所望の
寿命が得られないという問題点があった。However, in the mold according to the conventional example, since the opening edge portion 6b of the gate opening 6a has an acute angle, injection molding is repeated many times under high temperature and high pressure conditions. If this is done, there is a problem in that the opening edge portion 6b is easily worn or damaged by the glass fiber or the like contained in the molding material, and the desired life cannot be obtained.
【０００４】本発明は、前記問題点に鑑み、寿命が長い
成形加工用金型を提供することを目的とする。In view of the above problems, it is an object of the present invention to provide a molding die having a long life.
【０００５】[0005]
【課題を解決するための手段】本発明にかかる成形加工
用金型は、前記目的を達成するため、開口縁部に面取り
加工を施したゲート口周囲の表面に、イオン注入層ある
いは薄膜層を形成したものでもよく、また、開口縁部に
面取り加工を施したゲート口周囲の表面にイオン注入層
および薄膜層を順次形成したものでもよい。さらに、本
発明にかかる成形加工用金型は、前述の面取り加工の代
わりにアール付け加工を施したゲート口周囲の表面に、
イオン注入層あるいは薄膜層を形成してもよく、また、
イオン注入層および薄膜層を順次形成したものでもよ
い。特に、前記アール付け加工は射出成形の際に生じる
初期摩耗によるものであってもよい。In order to achieve the above-mentioned object, a molding die according to the present invention has an ion implantation layer or a thin film layer on the surface around a gate opening whose edge is chamfered. It may be formed, or may be one in which an ion implantation layer and a thin film layer are sequentially formed on the surface around the gate opening whose edge is chamfered. Furthermore, the molding die according to the present invention, on the surface around the gate opening, which is subjected to the rounding process instead of the above-mentioned chamfering process,
An ion implantation layer or a thin film layer may be formed, and
The ion implantation layer and the thin film layer may be sequentially formed. In particular, the rounding process may be due to initial wear that occurs during injection molding.
【０００６】[0006]
【作用】したがって、本発明によれば、開口縁部に設け
た面取り部またはアール付け部がイオン注入層または薄
膜層で被覆されることになる。Therefore, according to the present invention, the chamfered portion or the rounded portion provided at the opening edge portion is covered with the ion implantation layer or the thin film layer.
【０００７】[0007]
【実施例】次に、本発明にかかる実施例を図１ないし図
６の添付図面に従って説明する。第１実施例は、図１に
示すように、成形加工用金型１０のゲート１１を構成す
るゲート口１２の開口縁部１３に面取り加工を施して面
取り部１４を形成した後、ゲート口１２周囲の表面１５
にイオン注入処理を施してイオン注入層１６を形成した
ものである。Embodiments of the present invention will now be described with reference to the accompanying drawings of FIGS. In the first embodiment, as shown in FIG. 1, the opening edge 13 of the gate opening 12 of the gate 11 of the molding die 10 is chamfered to form a chamfered portion 14, and then the gate opening 12 is formed. Surrounding surface 15
The ion-implanted layer 16 is formed by performing ion-implantation treatment on the.
【０００８】面取り部１４の大きさ，角度等は、成形加
工用金型１０の材質や成形加工製品の材質，形状等によ
って適宜変更すればよく、特に限定するものではない。The size, angle and the like of the chamfered portion 14 may be appropriately changed depending on the material of the molding die 10 and the material and shape of the molded product, and are not particularly limited.
【０００９】イオン注入処理は、イオン化した元素に加
速器で高エネルギーを与え、面取りしたゲート口１２周
囲の表面１５に元素イオンを突入させて打ち込む方法で
ある。打ち込む元素イオンの種類や元素イオンの打ち込
み量，打ち込み深さ等は成形加工用金型１０の材質，形
状，使用条件に応じて任意に選択できる。例えば、成形
加工用金型が超硬合金からなる場合には、打ち込む元素
イオンとしては窒素イオン，炭素イオン，ホウ素イオン
の他、アルゴンなどの不活性ガスイオンが好適である。The ion implantation process is a method in which high energy is given to an ionized element by an accelerator so that the element ion is rushed into the chamfered surface 15 around the gate port 12 to implant it. The type of elemental ions to be implanted, the amount of elemental ions to be implanted, the depth of implantation, and the like can be arbitrarily selected according to the material, shape, and use conditions of the molding die 10. For example, when the molding die is made of cemented carbide, nitrogen ions, carbon ions, boron ions and inert gas ions such as argon are suitable as the element ions to be implanted.
【００１０】第２実施例は、図２に示すように、成形加
工用金型１０のゲート１１を構成するゲート口１２の開
口縁部１３に面取り加工を施して面取り部１４を形成し
た後、前記ゲート口１２周囲の表面１５に薄膜層１７を
形成したものである。In the second embodiment, as shown in FIG. 2, after the chamfering portion 14 is formed by chamfering the opening edge portion 13 of the gate opening 12 which constitutes the gate 11 of the molding die 10, the chamfered portion 14 is formed. A thin film layer 17 is formed on the surface 15 around the gate opening 12.
【００１１】面取り加工は前述の第１実施例と同様であ
るので、説明を省略する。The chamfering process is the same as that of the first embodiment described above, and the description thereof will be omitted.
【００１２】薄膜層１７の形成は既存の方法から任意に
選択でき、大別してＰＶＤ法およびＣＶＤ法があり、Ｐ
ＶＤ法としては、例えば、真空蒸着法，スパッタリング
法，イオンプレーティング法，イオン注入蒸着法が挙げ
られ、ＣＶＤ法としては、例えば、熱ＣＶＤ法，プラズ
マＣＶＤ法，光ＣＶＤ法が挙げられる。そして、薄膜層
１７の形成はこれらの方法を単独で使用してもよく、ま
た、適宜組み合わせて使用してもよい。The formation of the thin film layer 17 can be arbitrarily selected from the existing methods, and is roughly classified into a PVD method and a CVD method.
Examples of the VD method include a vacuum evaporation method, a sputtering method, an ion plating method, and an ion implantation evaporation method. Examples of the CVD method include a thermal CVD method, a plasma CVD method, and an optical CVD method. Then, for the formation of the thin film layer 17, these methods may be used alone or in appropriate combination.
【００１３】薄膜層１７を形成する元素，化合物は特に
限定するものではないが、特に、ＴｉＮ，ＴｉＣ，ＢＮ
等が好適である。The elements and compounds forming the thin film layer 17 are not particularly limited, but particularly TiN, TiC, BN.
Etc. are suitable.
【００１４】薄膜層１７の形成方法としては、例えば、
成形加工用金型１０が超硬合金からなる場合、ゲート口
１２の開口縁部１３に面取り加工を施して面取り部１４
を形成した後、ゲート口１２周囲の表面１５にチタンを
真空蒸着させると同時に、窒素イオンをイオン注入して
打ち込むイオン注入蒸着法が代表的である。なお、薄膜
層１７は異なる元素，化合物からなる２層構造，３層構
造以上のものであってもよい。As a method of forming the thin film layer 17, for example,
When the molding die 10 is made of cemented carbide, the chamfered portion 14 is formed by chamfering the opening edge 13 of the gate opening 12.
A typical example is an ion implantation vapor deposition method in which titanium is vacuum deposited on the surface 15 around the gate opening 12 after the formation, and at the same time, nitrogen ions are ion-implanted and implanted. Note that the thin film layer 17 may have a two-layer structure, a three-layer structure, or more composed of different elements and compounds.
【００１５】第３実施例は、図３に示すように、前述の
実施例と同様、ゲート口１２の開口縁部１３に面取り部
１４を形成した後、前記ゲート口１２周囲の表面１５に
イオン注入層１６および薄膜層１７を順次形成したもの
である。In the third embodiment, as shown in FIG. 3, the chamfered portion 14 is formed on the opening edge portion 13 of the gate opening 12, and then the ions are formed on the surface 15 around the gate opening 12 as in the above-described embodiments. The injection layer 16 and the thin film layer 17 are sequentially formed.
【００１６】面取り部１４の形成、イオン注入層１６お
よび薄膜層１７の形成は前述の第１，第２実施例とほぼ
同様であるので、説明を省略する。Since the formation of the chamfered portion 14 and the formation of the ion implantation layer 16 and the thin film layer 17 are almost the same as those of the first and second embodiments described above, the description thereof will be omitted.
【００１７】本実施例によれば、イオン注入層１６を形
成した後に薄膜層１７を形成するので、金型１０の表面
１５に対する薄膜層１７の密着強度が向上し、寿命がよ
り一層伸びるという利点がある。According to this embodiment, since the thin film layer 17 is formed after the ion implantation layer 16 is formed, the adhesion strength of the thin film layer 17 to the surface 15 of the mold 10 is improved and the life is further extended. There is.
【００１８】第４実施例は、図４に示すように、前述の
実施例がゲート口１２の開口縁部１３に形成した面取り
部１４にイオン注入層１６等を形成したものであるのに
対し、ゲート口１２の開口縁部１３にアール付け加工を
施してアール付け部１８を形成した後、ゲート口１２周
囲の表面１５にイオン注入処理を施してイオン注入層１
６を形成したものである。In the fourth embodiment, as shown in FIG. 4, the ion implantation layer 16 and the like are formed in the chamfered portion 14 formed in the opening edge portion 13 of the gate opening 12 in the above-described embodiment. After forming the rounded portion 18 by performing the rounding processing on the opening edge portion 13 of the gate opening 12, the surface 15 around the gate opening 12 is subjected to the ion implantation processing to form the ion implantation layer 1
6 is formed.
【００１９】アール付け部１８の大きさ，形成方法は、
既存のものから必要に応じて適宜選択すればよく、特に
限定するものではないが、アール付け加工は射出成形し
た際に生じる初期摩耗を利用したものであってもよい。
また、イオン注入処理は前述の第１実施例と同様である
ので、説明を省略する。The size and forming method of the rounded portion 18 are as follows.
It may be appropriately selected from existing ones and is not particularly limited, but the rounding process may be one utilizing the initial wear that occurs during injection molding.
The ion implantation process is the same as that of the first embodiment described above, and therefore its explanation is omitted.
【００２０】第５実施例は、図５に示すように、ゲート
口１２の開口縁部１３にアール付け加工を施してアール
付け部１８を形成した後、前記ゲート口１２周囲の表面
１５に薄膜層１７を形成した場合である。In the fifth embodiment, as shown in FIG. 5, after the rounded portion 18 of the gate opening 12 is rounded to form the rounded portion 18, a thin film is formed on the surface 15 around the gate opening 12. This is the case where the layer 17 is formed.
【００２１】アール付け加工は前述の第４実施例と同様
であり、薄膜層１７の形成方法は前述の第２実施例と同
様であるので、説明を省略する。The rounding process is the same as that of the above-mentioned fourth embodiment, and the method of forming the thin film layer 17 is the same as that of the above-mentioned second embodiment, so the explanation is omitted.
【００２２】第６実施例は、図６に示すように、開口縁
部１３にアール付け部１８を形成した後、前記ゲート口
１２周囲の表面１５にイオン注入層１６および薄膜層１
７を順次形成した場合である。In the sixth embodiment, as shown in FIG. 6, after the radiused portion 18 is formed on the opening edge portion 13, the ion implantation layer 16 and the thin film layer 1 are formed on the surface 15 around the gate opening 12.
This is a case where 7 are sequentially formed.
【００２３】アール付け加工は前述の第４実施例と同様
であり、また、イオン注入層１６および薄膜層１７の形
成方法は前述の第３実施例と同様であるので、説明を省
略する。The rounding process is the same as that of the above-mentioned fourth embodiment, and the method of forming the ion implantation layer 16 and the thin film layer 17 is the same as that of the above-mentioned third embodiment, so a description thereof will be omitted.
【００２４】[0024]
【発明の効果】以上の説明から明らかなように、本発明
にかかる成形加工用金型によれば、面取り加工で形成さ
れる面取り部またはアール付け加工で形成されるアール
付け部によって開口縁部の角度が鈍角になるとともに、
開口縁部とイオン注入層あるいは薄膜層との接触面積が
増大することによる相乗作用により、ゲート口の開口縁
部における耐衝撃性，耐摩耗性が向上するので、金型の
寿命が伸び、メンテナンスが軽減されて生産コストが低
減するという効果がある。As is apparent from the above description, according to the molding die of the present invention, the opening edge portion is formed by the chamfered portion formed by chamfering or the rounded portion formed by rounding. Becomes obtuse,
By increasing the contact area between the opening edge and the ion-implanted layer or thin film layer, the impact resistance and wear resistance at the opening edge of the gate opening are improved, so the life of the mold is extended and maintenance is improved. Is reduced and the production cost is reduced.
【図１】 本発明にかかる成形加工用金型の第１実施例
を示す部分拡大断面図である。FIG. 1 is a partially enlarged cross-sectional view showing a first embodiment of a molding die according to the present invention.
【図２】 本発明にかかる成形加工用金型の第２実施例
を示す部分拡大断面図である。FIG. 2 is a partially enlarged sectional view showing a second embodiment of the molding die according to the present invention.
【図３】 本発明にかかる成形加工用金型の第３実施例
を示す部分拡大断面図である。FIG. 3 is a partially enlarged sectional view showing a third embodiment of a molding die according to the present invention.
【図４】 本発明にかかる成形加工用金型の第４実施例
を示す部分拡大断面図である。FIG. 4 is a partially enlarged sectional view showing a fourth embodiment of a molding die according to the present invention.
【図５】 本発明にかかる成形加工用金型の第５実施例
を示す部分拡大断面図である。FIG. 5 is a partially enlarged sectional view showing a fifth embodiment of a molding die according to the present invention.
【図６】 本発明にかかる成形加工用金型の第６実施例
を示す部分拡大断面図である。FIG. 6 is a partially enlarged sectional view showing a sixth embodiment of a molding die according to the present invention.
【図７】 従来例にかかる成形加工用金型の組み付け状
態を示す断面図である。FIG. 7 is a cross-sectional view showing an assembled state of a molding die according to a conventional example.
【図８】 従来例にかかるゲート口を有する成形加工用
金型を示す部分斜視図である。FIG. 8 is a partial perspective view showing a molding die having a gate opening according to a conventional example.
【図９】 従来例にかかるゲート口を有する成形加工用
金型を示す部分拡大断面図である。FIG. 9 is a partially enlarged sectional view showing a molding die having a gate opening according to a conventional example.
１０…成形加工用金型、１１…ゲート、１２…ゲート
口、１３…開口縁部、１４…面取り部、１５…表面、１
６…イオン注入層、１７…薄膜層、１８…アール付け
部。DESCRIPTION OF SYMBOLS 10 ... Mold for processing, 11 ... Gate, 12 ... Gate opening, 13 ... Opening edge, 14 ... Chamfer, 15 ... Surface, 1
6 ... Ion implantation layer, 17 ... Thin film layer, 18 ...
Claims (7)
周囲の表面に、イオン注入層を形成したことを特徴とす
る成形加工用金型。1. A molding die, wherein an ion-implanted layer is formed on a surface around a gate opening whose opening edge is chamfered.
周囲の表面に、薄膜層を形成したことを特徴とする成形
加工用金型。2. A molding die, wherein a thin film layer is formed on the surface around the gate opening whose opening edge is chamfered.
周囲の表面に、イオン注入層および薄膜層を順次形成し
たことを特徴とする成形加工用金型。3. A molding die, wherein an ion-implanted layer and a thin film layer are sequentially formed on a surface around the gate opening whose opening edge is chamfered.
ト口周囲の表面に、イオン注入層を形成したことを特徴
とする成形加工用金型。4. A molding die, wherein an ion-implanted layer is formed on a surface around a gate opening whose opening edge is rounded.
ト口周囲の表面に、薄膜層を形成したことを特徴とする
成形加工用金型。5. A molding die, wherein a thin film layer is formed on the surface around the gate opening whose opening edge is rounded.
ト口周囲の表面に、イオン注入層および薄膜層を順次形
成したことを特徴とする成形加工用金型。6. A molding die, wherein an ion-implanted layer and a thin film layer are sequentially formed on a surface around a gate opening having a rounded edge portion.
工する際に生じる初期摩耗であることを特徴とする請求
項４，５又は６記載の成形加工用金型。7. The molding die according to claim 4, wherein the rounding process is initial wear that occurs when molding resin or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29851692A JPH06143350A (en) | 1992-11-09 | 1992-11-09 | Forming mold |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29851692A JPH06143350A (en) | 1992-11-09 | 1992-11-09 | Forming mold |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06143350A true JPH06143350A (en) | 1994-05-24 |
Family
ID=17860736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29851692A Pending JPH06143350A (en) | 1992-11-09 | 1992-11-09 | Forming mold |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06143350A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1048432A1 (en) * | 1999-04-28 | 2000-11-02 | Shin-Etsu Chemical Co., Ltd. | Mold and method for producing molded fluoroelastomer parts |
| JP2016087818A (en) * | 2014-10-30 | 2016-05-23 | 双葉電子工業株式会社 | Valve gate apparatus and injection molding die |
-
1992
- 1992-11-09 JP JP29851692A patent/JPH06143350A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1048432A1 (en) * | 1999-04-28 | 2000-11-02 | Shin-Etsu Chemical Co., Ltd. | Mold and method for producing molded fluoroelastomer parts |
| US6468463B1 (en) | 1999-04-28 | 2002-10-22 | Shin-Etsu Chemical Co., Ltd. | Method for producing molded fluoroelastomer parts |
| JP2016087818A (en) * | 2014-10-30 | 2016-05-23 | 双葉電子工業株式会社 | Valve gate apparatus and injection molding die |
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