WO2004056698A3 - Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component - Google Patents

Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component Download PDF

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Publication number
WO2004056698A3
WO2004056698A3 PCT/FR2003/003789 FR0303789W WO2004056698A3 WO 2004056698 A3 WO2004056698 A3 WO 2004056698A3 FR 0303789 W FR0303789 W FR 0303789W WO 2004056698 A3 WO2004056698 A3 WO 2004056698A3
Authority
WO
WIPO (PCT)
Prior art keywords
sacrificial layer
layer
polymer material
making
resulting component
Prior art date
Application number
PCT/FR2003/003789
Other languages
French (fr)
Other versions
WO2004056698A2 (en
Inventor
Philippe Robert
France Michel
Catherine Maeder-Pachurka
Nicolas Sillon
Original Assignee
Commissariat Energie Atomique
Philippe Robert
France Michel
Catherine Maeder-Pachurka
Nicolas Sillon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Philippe Robert, France Michel, Catherine Maeder-Pachurka, Nicolas Sillon filed Critical Commissariat Energie Atomique
Priority to EP03799623A priority Critical patent/EP1572578A2/en
Priority to AU2003299341A priority patent/AU2003299341A1/en
Priority to US10/536,890 priority patent/US20060138076A1/en
Publication of WO2004056698A2 publication Critical patent/WO2004056698A2/en
Publication of WO2004056698A3 publication Critical patent/WO2004056698A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0118—Processes for the planarization of structures
    • B81C2201/0125—Blanket removal, e.g. polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

The invention concerns a method which consists in successively depositing a polymeric sacrificial layer (2), depositing, on at least part of the substrate (1) and the front surface of the sacrificial layer (2), an embedding layer (6), with a thickness greater than that of the sacrificial layer (2) and performing planarization such that the front surfaces of the sacrificial layer (2) and of the embedding layer (6) form a common planar surface. A forming layer (3) of a suspended structure (5) is deposited on the front face of the common planar surface. The planarization can include chemical mechanical polishing and etching the embedding layer (6). Etching the sacrificial layer (2) can be performed by means of a mask, formed on the front surface of a polymer material layer, removed during the planarization step.
PCT/FR2003/003789 2001-02-27 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component WO2004056698A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03799623A EP1572578A2 (en) 2002-12-18 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component
AU2003299341A AU2003299341A1 (en) 2002-12-18 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component
US10/536,890 US20060138076A1 (en) 2001-02-27 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0216088A FR2849016B1 (en) 2002-12-18 2002-12-18 METHOD FOR MAKING A PLANE SUSPENDED MICRO-STRUCTURE USING A SACRIFICIAL LAYER OF POLYMERIC MATERIAL AND COMPONENT OBTAINED
FR02/16088 2002-12-18

Publications (2)

Publication Number Publication Date
WO2004056698A2 WO2004056698A2 (en) 2004-07-08
WO2004056698A3 true WO2004056698A3 (en) 2004-11-11

Family

ID=32406154

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/003789 WO2004056698A2 (en) 2001-02-27 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component

Country Status (4)

Country Link
EP (1) EP1572578A2 (en)
AU (1) AU2003299341A1 (en)
FR (1) FR2849016B1 (en)
WO (1) WO2004056698A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2874213B1 (en) * 2004-08-13 2007-03-02 Commissariat Energie Atomique DEVICE COMPRISING AN ENCAPSULATED MICROSYSTEM AND METHOD OF MANUFACTURE
US7271022B2 (en) * 2004-12-21 2007-09-18 Touchdown Technologies, Inc. Process for forming microstructures
US7264984B2 (en) 2004-12-21 2007-09-04 Touchdown Technologies, Inc. Process for forming MEMS
US7245135B2 (en) 2005-08-01 2007-07-17 Touchdown Technologies, Inc. Post and tip design for a probe contact
US7362119B2 (en) 2005-08-01 2008-04-22 Touchdown Technologies, Inc Torsion spring probe contactor design
US7365553B2 (en) 2005-12-22 2008-04-29 Touchdown Technologies, Inc. Probe card assembly
US7180316B1 (en) 2006-02-03 2007-02-20 Touchdown Technologies, Inc. Probe head with machined mounting pads and method of forming same
GB2588891B (en) * 2019-10-23 2024-04-24 Smart Photonics Holding B V Manufacturing a semiconductor structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430421A (en) * 1992-12-15 1995-07-04 Asulab S.A. Reed contactor and process of fabricating suspended tridimensional metallic microstructure
US5582678A (en) * 1986-10-20 1996-12-10 Canon Kabushiki Kaisha Process for producing ink jet recording head
WO2000033089A2 (en) * 1998-12-02 2000-06-08 Formfactor, Inc. Lithographic contact elements
US20020047172A1 (en) * 2000-08-23 2002-04-25 Reid Jason S. Transition metal dielectric alloy materials for MEMS
WO2002068321A2 (en) * 2001-02-27 2002-09-06 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1064135C (en) * 1994-04-30 2001-04-04 大宇电子株式会社 Thin film actuated mirror array

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582678A (en) * 1986-10-20 1996-12-10 Canon Kabushiki Kaisha Process for producing ink jet recording head
US5430421A (en) * 1992-12-15 1995-07-04 Asulab S.A. Reed contactor and process of fabricating suspended tridimensional metallic microstructure
WO2000033089A2 (en) * 1998-12-02 2000-06-08 Formfactor, Inc. Lithographic contact elements
US20020047172A1 (en) * 2000-08-23 2002-04-25 Reid Jason S. Transition metal dielectric alloy materials for MEMS
WO2002068321A2 (en) * 2001-02-27 2002-09-06 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of EP1572578A2 *
SONG H ET AL: "Wafer level vacuum packaged de-coupled vertical gyroscope by a new fabrication process", PROCEDINGS OF THE IEEE 13TH. ANNUAL INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS. MEMS 2000. MIYAZAKI, JAPAN, JAN. 23-27, 2000, 23 January 2000 (2000-01-23), pages 520 - 524, XP010377181 *

Also Published As

Publication number Publication date
FR2849016B1 (en) 2005-06-10
EP1572578A2 (en) 2005-09-14
AU2003299341A1 (en) 2004-07-14
WO2004056698A2 (en) 2004-07-08
FR2849016A1 (en) 2004-06-25

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