JPH0623444A - Metallic die for press work - Google Patents

Abstract

PURPOSE:To make the generation of burrs on a product difficult to occur and to prolong the service life of a metallic die by forming an ion implanting layer on a cutting blade edge forming a chamfered part. CONSTITUTION:After a chamfered part 3 is formed by chamfering the edge part 2 of the cutting blade of a metallic die 1 for press work, the ion implanted layer 4 is formed by exerting an ion implanting treatment. In the ion implanting treatment, a high energy is applied to an ionized element by an accelerator and the element ion is charged and driven onto the chamfered edge part 2 of cutting blade. Thus, the impact resistance and wear resistance of the cutting blade are improved, the service life of the metallic die is prolonged and the maintenance cost is reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stamping die, and more particularly to strengthening a cutting edge of the die.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 5, a die for press working prevents wear and damage on the edge 2 of the cutting edge of the die 1, and also prevents burr from occurring in the pressed product. Therefore, for example, the thin film layer 5 is provided on the cutting edge 2 by C.
VD (Chemical Vapor Deposition) method or PVD
By forming by the (Physical Vapor Deposition) method, impact resistance, wear resistance, etc. of the mold 1 are improved.

[0003]

However, in the mold according to the conventional example, it is impossible to effectively prevent the cutting edge from being chipped (chipping) due to the impact force during processing, and the desired life cannot be obtained. At the same time, there is a problem that burr cannot be completely prevented from occurring in the pressed product.

In view of the above problems, it is an object of the present invention to provide a die for press working which does not cause burr in a press worked product and has a long life.

[0005]

In order to achieve the above-mentioned object, a die for press working according to the present invention has a structure in which an ion-implanted layer is formed on a chamfered cutting edge. Further, a thin film layer may be formed on the chamfered cutting edge portion. Further, an ion implantation layer or a thin film layer may be formed on the edge of the cutting edge which is rounded instead of chamfered.

[0006]

Therefore, according to the present invention, the edge portion of the cutting edge is covered with the ion implantation layer or the thin film layer.

[0007]

Embodiments of the present invention will now be described with reference to the accompanying drawings of FIGS. In the first embodiment, as shown in FIG. 1, after the cutting edge portion 2 of the press die 1 is chamfered to form a chamfered portion 3, an ion implantation process is performed to form an ion implantation layer 4. It was formed.

The size, angle and the like of the chamfered portion 3 may be appropriately changed depending on the material of the press die 1 and the material and shape of the pressed product, and are not particularly limited.

The ion implantation process is a method in which high energy is given to an ionized element by an accelerator so that the element ion is rushed into the chamfered cutting edge portion 2 to implant it. The type of elemental ions to be implanted, the amount of elemental ions to be implanted, the depth of implantation, and the like can be arbitrarily selected according to the material, shape, and use conditions of the pressing die 1. For example, when the die for press working is made of cemented carbide, the element ions to be implanted include nitrogen ions, carbon ions, boron ions, and inert gas ions such as argon.

In the second embodiment, as shown in FIG. 2, after the cutting edge 2 of the press die 1 is chamfered to form a chamfer 3, a thin film is formed on the cutting edge 2. This is the case where the layer 5 is formed.

The chamfering process is the same as that of the first embodiment described above, and the description thereof will be omitted.

The formation of the thin film layer 5 can be arbitrarily selected from existing methods, and is roughly classified into a PVD method and a CVD method.
The VD method includes, for example, a vacuum deposition method, a sputtering method,
An ion plating method and an ion implantation vapor deposition method can be cited. Examples of the CVD method include a thermal CVD method and a plasma CV.
D method and photo CVD method are mentioned. Then, for the formation of the thin film layer 5, these methods may be used alone or in appropriate combination. Further, the thin film layer 5 may be formed by combining these with the ion implantation method described above.

The elements and compounds forming the thin film layer 5 are not particularly limited, but TiN, TiC, BN, etc. are particularly preferable.

As a method of forming the thin film layer 5, for example, when the pressing die 1 is made of a cemented carbide, the cutting edge 1 is formed by chamfering the pressing die 1 to form the chamfered portion 3. A typical example is an ion-implantation vapor deposition method in which titanium is vacuum-deposited in 2 and at the same time nitrogen ions are ion-implanted and implanted.

Further, the thin film layer 5 may have a two-layer structure, a three-layer structure or more composed of different elements and compounds. For example, the ion-implanted layer and the ion-implanted material are formed on the chamfered cutting edge portion 2. The thin film layer 5 may be formed by sequentially stacking vapor deposition layers.

In the third embodiment, as shown in FIG. 3, the cutting edge 2 of the press die 1 is rounded to form a rounded portion 6 and then ion-implanted. This is the case where the ion implantation layer 4 is formed.

The size of the rounded portion 6 may be appropriately selected as needed and is not particularly limited. The ion implantation process is the same as that of the first embodiment described above, and therefore its explanation is omitted.

In the fourth embodiment, as shown in FIG. 4, after the cutting edge 2 is rounded to form the rounded portion 6, the thin film layer 5 is formed on the cutting edge 2. This is the case.

The rounding process and the method of forming the thin film layer 5 are the same as those in the above-mentioned third and second embodiments, and therefore the explanation thereof is omitted.

[0020]

As is apparent from the above description, according to the die for press working of the present invention, the cutting edge angle is increased by the chamfering processing or the rounding processing, and the cutting edge and the ion implantation layer are formed. Or, due to the synergistic effect of increasing the contact area with the thin film layer, the impact resistance and wear resistance of the cutting edge are improved and chipping is less likely to occur, so the life of the mold is extended and maintenance costs are reduced. Is reduced. Further, since the angle of the cutting edge is increased by the chamfering process or the rounding process, the elastic deformation is smaller than that of the conventional cutting edge, which has the effect of completely preventing the burr of the pressed product.

[Brief description of drawings]

FIG. 1 is a partially enlarged cross-sectional view showing a first embodiment of a pressing die according to the present invention.

FIG. 2 is a partially enlarged cross-sectional view showing a second embodiment of the pressing die according to the present invention.

FIG. 3 is a partially enlarged cross-sectional view showing a third embodiment of the pressing die according to the present invention.

FIG. 4 is a partially enlarged cross-sectional view showing a fourth embodiment of a press working die according to the present invention.

FIG. 5 is a partially enlarged cross-sectional view showing a pressing die according to a conventional example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Metal mold | die for press processing, 2 ... Cutting edge part, 3 ... Chamfer part, 4 ... Ion implantation layer, 5 ... Thin film layer, 6 ... R addition part.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Internal reference number FI technical display location C23C 14/48 9046-4K

Claims (4)

[Claims] 1. A die for press working, wherein an ion-implanted layer is formed on a chamfered cutting edge. 2. A die for press working, wherein a thin film layer is formed on a chamfered cutting edge. 3. A die for press working, characterized in that an ion-implanted layer is formed on an edge portion of a cutting edge which has been rounded. 4. A die for press working, wherein a thin film layer is formed on an edge portion of the cutting edge which has been rounded.