JPH06140557A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPH06140557A
JPH06140557A JP28481192A JP28481192A JPH06140557A JP H06140557 A JPH06140557 A JP H06140557A JP 28481192 A JP28481192 A JP 28481192A JP 28481192 A JP28481192 A JP 28481192A JP H06140557 A JPH06140557 A JP H06140557A
Authority
JP
Japan
Prior art keywords
outer lead
resin layer
bent
sealing resin
acute angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28481192A
Other languages
Japanese (ja)
Inventor
Shiyuuzou Akishima
周三 明島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP28481192A priority Critical patent/JPH06140557A/en
Publication of JPH06140557A publication Critical patent/JPH06140557A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3421Leaded components

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To increase an amount of plastic working and to improve flatness by lengthening the total length of an outer lead apparently without changing the distance between the tip of the outer lead and a sealing resin layer, and forming another part, which crosses the outer lead part that is guided to the orthogonal direction with respect to a mounting substrate at an acute angle. CONSTITUTION:An outer lead 2, which is guided to the outside from a sealing resin layer 1, is machined twice for surface mounting on a mounting substrate. Three parts are formed of a part, which is directed in the horizontal direction from the sealing resin layer 1, a first bent part 3, which is bent at an acute angle, and a second bent part 4, which is bent again comparatively gently. For the outer lead 2, nickel alloy is used as conductive metal. In the machining of the first bent part 3 and the second bent part 4, elastic working and plastic working are performed. The amount of the plastic working becomes large by the bending at an acute angle. Therefore, the spring-back characteristic becomes less, and the flatness is improved. The outer lead 2 has the jumping-up shape, and residual stress is removed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、表面実装に適用する樹
脂封止型半導体装置に係わり、特に封止樹脂層から外部
に導出するアウタ−リ−ド形状の改良に好適する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device applied to surface mounting, and is particularly suitable for improving the outer lead shape led out from a sealing resin layer to the outside.

【0002】[0002]

【従来の技術】近年集積度が益々向上する半導体素子
は、200ピン以上のものが市販されているが、その組
立工程は、いわゆるタブ方式の外にリ−ドフレ−ムによ
る方式も依然として使用されている。リ−ドフレ−ムに
マウントする半導体素子を保護するいわゆる封止樹脂層
即ち外囲器の構造としては、QFP、SOPならびにD
IPなどが知られており、封止樹脂層から導出するアウ
タ−リ−ドの形状も表面実装に備えて多くの形式が採用
されている。
2. Description of the Related Art In recent years, semiconductor devices with more and more integrated circuits having more than 200 pins have been put on the market, but the assembling process is not limited to the so-called tab system, but a system using a lead frame is still used. ing. The structure of a so-called sealing resin layer, that is, an envelope for protecting the semiconductor element mounted on the lead frame is QFP, SOP and D.
IP and the like are known, and many forms of the outer lead lead out from the sealing resin layer are also prepared for surface mounting.

【0003】集積回路素子をマウントする樹脂封止型半
導体装置のアウタ−リ−ド(通称ガルウイング)を図1
を参照して説明するが、その形状については日本電子工
業会(EIAJ)や米国のJEDECのスペックでも垂
直角度θ2 (図2参照)は、90°以上すなわち鈍角に
規格化されている。これに伴って国内ならびに国外の半
導体メ−カによる製品でも垂直角度θ2 は、鈍角に整形
されている。
FIG. 1 shows an outer lead (commonly known as a gull wing) of a resin-sealed semiconductor device for mounting an integrated circuit element.
The vertical angle θ 2 (see FIG. 2) is standardized to 90 ° or more, that is, an obtuse angle, according to the specifications of the Japan Electronic Industries Association (EIAJ) and JEDEC in the United States. Along with this, the vertical angle θ 2 is also obtusely shaped in products made by domestic and foreign semiconductor manufacturers.

【0004】リ−ドフレ−ムを組立工程に利用する樹脂
封止型半導体装置は、リ−ドフレ−ムに設置するベッド
部に半導体素子をマウント後、半導体素子に形成する電
極とリ−ドフレ−ムのインナ−リ−ド間に、ワイヤ−ボ
ンディングにより金属細線を圧着して電気的な接続状態
とする。更に、トランスァモ−ルド法により樹脂封止を
行って半導体素子を外部雰囲気から保護すると共に、封
止樹脂層外に導出するインナ−リ−ドの名称はアウタ−
リ−ドと変更する。
In a resin-sealed semiconductor device using a lead frame in an assembly process, a semiconductor element is mounted on a bed portion installed on the lead frame, and then an electrode and a lead frame formed on the semiconductor element. A thin metal wire is crimped by wire bonding between the inner and outer leads of the frame to establish an electrical connection. Further, the semiconductor element is sealed by a trans-mold method to protect the semiconductor element from the external atmosphere, and the name of the inner lead led out to the outside of the sealing resin layer is outer.
Change to lead.

【0005】図1に明らかなように、封止樹脂層外に導
出するアウタ−リ−ド2は、表面実装に備えて2度折曲
加工する。第1折曲部3では、封止樹脂層1から水平方
向に導出するアウタ−リ−ド2を、下方に90°以上折
曲げてから更に先端に近い位置の第2折曲部4で再び封
止樹脂層1より外側方向に曲げ、1度目の加工は鈍角に
するが(図2参照)前記のように規格化されている。
As is apparent from FIG. 1, the outer lead 2 led out of the sealing resin layer is bent twice in preparation for surface mounting. In the first bent portion 3, the outer lead 2 which is led out in the horizontal direction from the sealing resin layer 1 is bent downward by 90 ° or more, and then again at the second bent portion 4 located closer to the tip. Bending outward from the sealing resin layer 1 makes the first processing obtuse (see FIG. 2), but is standardized as described above.

【0006】図3には、JEDECにおけるガルウイン
グアウタ−リ−ド2の規格値を明らかにした。
FIG. 3 clarifies the standard value of the gull wing outer lead 2 in JEDEC.

【0007】[0007]

【発明が解決しようとする課題】図1に明らかにするア
ウタ−リ−ドは、ガルウイング形状であり、実装に際し
て下記の難点がある。即ち、外囲器の軽薄短小化に伴っ
て、アウタ−リ−ドが短くなり、外部リ−ドと実装基板
の接続部分でのクッション効果が小さくなった。これは
熱膨脹の違いや振動によるダメ−ジを緩和する働きを意
味する。更に多ピン化に伴って、リ−ドフレ−ムに形成
するインナ−リ−ド数が増え、更にそのピッチやインナ
−リ−ドの幅も狭くなるので、外部からの振動や熱応力
などのダメ−ジを受け易い。更にまた、半導体素子を埋
設する封止樹脂層1の大型化と薄型化により発生する反
りなどによって平坦性が悪くなり易い。
The outer lead clarified in FIG. 1 has a gull wing shape, and has the following problems in mounting. That is, the outer lead has become shorter with the miniaturization of the envelope, and the cushioning effect at the connecting portion between the outer lead and the mounting board has become smaller. This means that the difference in thermal expansion and the damage caused by vibration are alleviated. As the number of pins increases, the number of inner leads formed on the lead frame increases, and the pitch and width of the inner leads also decrease, so that external vibration and thermal stress It is easy to receive damage. Furthermore, the flatness is apt to be deteriorated due to a warp or the like caused by the enlarging and thinning of the sealing resin layer 1 in which the semiconductor element is embedded.

【0008】本発明は、このような事情により成された
もので、特に、アウタ−リ−ドの平坦性を向上すること
を目的とする。
The present invention has been made under such circumstances, and it is an object of the present invention to improve the flatness of the outer lead.

【0009】[0009]

【課題を解決するための手段】実装基板に対して垂直方
向に向けて封止樹脂層から導出するリ−ド部分に対し
て、鋭角に交差する他の部分を備える点に本発明に係わ
る樹脂封止型半導体装置の特徴がある。
The resin according to the present invention is provided with another portion that intersects the lead portion extending from the encapsulating resin layer in a direction perpendicular to the mounting substrate at an acute angle. There is a feature of the sealed semiconductor device.

【0010】[0010]

【作用】本発明に係わる樹脂封止型半導体装置は、アウ
タ−リ−ドの先端と封止樹脂層間の距離を変えずに、ア
ウタ−リ−ドの全長を見かけ上大きくして表面実装に備
える。このために実装基板に対して封止樹脂層から垂直
方向に導出するアウタ−リ−ド部分に対して鋭角に交差
する多の部分を形成することにより加工塑性量を増加し
て、平坦性を向上する。
The resin-encapsulated semiconductor device according to the present invention is mounted on the surface by increasing the apparent length of the outer lead without changing the distance between the tip of the outer lead and the encapsulating resin layer. Prepare For this reason, by forming a large number of portions that intersect the outer lead portion that is vertically drawn from the encapsulating resin layer with respect to the mounting substrate at an acute angle, the amount of processing plasticity is increased and flatness is improved. improves.

【0011】[0011]

【実施例】本発明に係わる1実施例を図4乃至図6を参
照して説明する。各図に明らかなように、封止樹脂層1
から外部に導出するアウタ−リ−ド2は、図示しない実
装基板に対して表面実装するのに備えて2回加工する。
即ち、封止樹脂層1から水平方向に向かう部分と、それ
から第1折曲部3の位置で鋭角に折曲げ更に、第2折曲
部4で再度折曲げるので、a、b、cの3部分に分けら
れる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment according to the present invention will be described with reference to FIGS. As is clear from each figure, the sealing resin layer 1
The outer lead 2 led out from the outside is processed twice for surface mounting on a mounting board (not shown).
That is, since it is bent at an acute angle at a portion extending from the sealing resin layer 1 in the horizontal direction and then at the position of the first bent portion 3 and further bent again at the second bent portion 4, 3 of a, b, c. It is divided into parts.

【0012】a部には、アウタ−リ−ド2を連結しか
つ、樹脂封止工程により透みだす樹脂用のダムバ−5を
形成し、アウタ−リ−ド2の先端と封止樹脂層1間の距
離は、従来の寸法と全く同一に形成する。
The outer lead 2 is connected to the portion a, and a dam bar 5 for the resin is formed by the resin sealing process so as to be transparent, and the tip of the outer lead 2 and the sealing resin layer 1 are formed. The distance between them is made exactly the same as the conventional size.

【0013】aと残りの距離の規格は、0.8:1.
2、0.8:0.5、0.3:0.5(単位mm)と益
々狭くなる傾向にあり、アウタ−リ−ド2の長さも2、
1.3、0.3mmと短くなっている。
The standard for a and the remaining distance is 0.8: 1.
2, 0.8: 0.5, 0.3: 0.5 (unit: mm), which tends to become narrower, and the length of the outer lead 2 is 2,
It is as short as 1.3 and 0.3 mm.

【0014】図2では、a部分は水平方向に伸ばしてい
るが、図3の例ではやや上方に伸ばしてから第1折曲部
3で鋭角に折曲げる。この例では、b部分は垂直方向に
延長し、第2折曲部4では比較的緩やかに曲げ、形状は
図1とほぼ同様である。しかし、アウタ−リ−ド2の先
端と封止樹脂層1間の距離は、図2と同一である。
In FIG. 2, the portion a is extended in the horizontal direction, but in the example of FIG. 3, it is extended slightly upward and then bent at an acute angle at the first bending portion 3. In this example, the b portion extends in the vertical direction, and the second bent portion 4 bends relatively gently, and the shape is almost the same as in FIG. However, the distance between the tip of the outer lead 2 and the sealing resin layer 1 is the same as in FIG.

【0015】図4は、第1折曲部3と第2折曲部4にお
ける折曲強度がいずれも大きい例であるが、アウタ−リ
−ド2の先端と封止樹脂層1間の距離は、図2と同じで
ある。
FIG. 4 shows an example in which the bending strengths of the first bent portion 3 and the second bent portion 4 are both large, but the distance between the tip of the outer lead 2 and the sealing resin layer 1 is large. Is the same as in FIG.

【0016】ところで、アウタ−リ−ド2は、当然導電
性金属である金属で構成し、例えば鉄ニッケル合金によ
り構成する。従って第1折曲部3と第2折曲部4で加工
することにより弾性加工量と塑性加工量が生ずるが、前
記のように鋭角に折曲げることにより、従来鈍角に形成
する際より塑性加工量が大きくなる。これに伴ってスプ
リングバック特性が小さくなり平坦性が改善される。
By the way, the outer lead 2 is naturally made of a conductive metal, for example, an iron-nickel alloy. Therefore, although the elastic working amount and the plastic working amount are generated by processing the first bent portion 3 and the second bent portion 4, the plastic working is more difficult than the conventional obtuse angle forming by bending at the acute angle as described above. The amount increases. Along with this, the springback characteristic becomes smaller and the flatness is improved.

【0017】また、図5に示す実施例は、アウタ−リ−
ド2aが封止樹脂層1よりはね上った形なので、樹脂封
止工程やバリ取り工程での残留応力を除く効果がある。
The embodiment shown in FIG. 5 is an outer reel.
Since the groove 2a has a shape that is higher than the sealing resin layer 1, it has an effect of removing the residual stress in the resin sealing step and the deburring step.

【0018】また、垂直方向のアウタ−リ−ド2bは封
止樹脂層1即ち、実装基板に対して90°に整形してあ
るので、曲げ易い。
Further, since the outer lead 2b in the vertical direction is shaped at 90 ° with respect to the sealing resin layer 1, that is, the mounting substrate, it is easy to bend.

【0019】更に図6の実施例は、第1折曲部3におけ
る塑性加工量を多くして外部からのダメ−ジを緩和する
程度を高める。また、実装基板に直接挿入するアウタ−
リ−ド2cの長さを大きくしたので、安定した嵌合が可
能になる。
Further, in the embodiment shown in FIG. 6, the plastic working amount in the first bent portion 3 is increased to increase the degree of relaxing the damage from the outside. In addition, the outer that is directly inserted into the mounting board
Since the length of the lead 2c is increased, stable fitting is possible.

【0020】[0020]

【発明の効果】本発明に係わる樹脂封止型半導体装置で
は、封止樹脂層とアウタ−リ−ド間の距離は変らない
が、みかけ上アウタ−リ−ドの長さが大きく、外部応力
緩和に効果がある。しかも、実装面積が少ないアウタ−
リ−ドの形状が得られ、これによりアウタ−リ−ドの折
曲部の塑性加工量が大きくて平坦性が向上する。
In the resin-encapsulated semiconductor device according to the present invention, the distance between the encapsulating resin layer and the outer lead does not change, but apparently the length of the outer lead is large and external stress is applied. Effective in mitigation. Moreover, the outer is small in mounting area.
The shape of the lead is obtained, whereby the plastic working amount of the bent portion of the outer lead is large and the flatness is improved.

【0021】更に封止樹脂層から実装基板に対して、水
平方向のアウタ−リ−ド部分が長く採れるので、タムバ
−が折曲部にかかり難く、安定した曲げができるし、実
装基板に対しても安定した嵌合が可能になる。
Further, since the outer lead portion in the horizontal direction from the sealing resin layer to the mounting board is long, the tamper is less likely to be bent, and stable bending is possible. Even then, stable mating is possible.

【図面の簡単な説明】[Brief description of drawings]

【図1】従来の樹脂封止型半導体装置の断面図である。FIG. 1 is a cross-sectional view of a conventional resin-sealed semiconductor device.

【図2】図1のアウタ−リ−ドの折曲状態を示す断面図
である。
FIG. 2 is a cross-sectional view showing a bent state of the outer lead shown in FIG.

【図3】従来の樹脂封止型半導体装置におけるアウタ−
リ−ドの規格値を示す図である。
FIG. 3 is an outer view of a conventional resin-sealed semiconductor device.
It is a figure which shows the standard value of a lead.

【図4】本発明の1実施例の断面図である。FIG. 4 is a sectional view of one embodiment of the present invention.

【図5】本発明の他の実施例の断面図である。FIG. 5 is a sectional view of another embodiment of the present invention.

【図6】本発明の更に他の実施例の断面図である。FIG. 6 is a sectional view of still another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1:封止樹脂層、 2:アウタ−リ−ド、 3:第1折曲部、 4:第2折曲部、 5:ダムバ−、 1: sealing resin layer, 2: outer lead, 3: first bent portion, 4: second bent portion, 5: dam bar,

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 実装基板に対して垂直方向に向けて封止
樹脂層から導出するリ−ド部分に対して、鋭角に交差す
る他の部分を備えることを特徴とする樹脂封止型半導体
装置
1. A resin-sealed semiconductor device, comprising: a lead portion extending from a sealing resin layer in a direction perpendicular to a mounting substrate, and another portion intersecting an acute angle.
JP28481192A 1992-10-23 1992-10-23 Resin-sealed semiconductor device Pending JPH06140557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28481192A JPH06140557A (en) 1992-10-23 1992-10-23 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28481192A JPH06140557A (en) 1992-10-23 1992-10-23 Resin-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH06140557A true JPH06140557A (en) 1994-05-20

Family

ID=17683321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28481192A Pending JPH06140557A (en) 1992-10-23 1992-10-23 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH06140557A (en)

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