JPH0613756A - Conductive paste composition - Google Patents

Conductive paste composition

Info

Publication number
JPH0613756A
JPH0613756A JP4167202A JP16720292A JPH0613756A JP H0613756 A JPH0613756 A JP H0613756A JP 4167202 A JP4167202 A JP 4167202A JP 16720292 A JP16720292 A JP 16720292A JP H0613756 A JPH0613756 A JP H0613756A
Authority
JP
Japan
Prior art keywords
weight
conductor
conductive paste
silver
transfer sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4167202A
Other languages
Japanese (ja)
Inventor
Minehiro Itagaki
峰広 板垣
Kazuyuki Okano
和之 岡野
Ryo Kimura
涼 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4167202A priority Critical patent/JPH0613756A/en
Publication of JPH0613756A publication Critical patent/JPH0613756A/en
Pending legal-status Critical Current

Links

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

PURPOSE:To bore a via-hole on a ceramic board through laser machining by a method wherein the ceramic multilayer wiring board is formed out of conductive paste composition containing specific components. CONSTITUTION:Conductive paste containing 50.0 to 75.0% by weight powdery conductor of silver, palladium, or alloy of them, 25.0 to 50.0% by weight inorganic component of silver oxide powder, and organic vehicle component composed of organic binder and solvent is used. A conductor layer 2 is formed on a base film 1 subjected to a releasing treatment out of the above wiring conductive paste through a screen printing method. Furthermore, an insulating layer 3 is formed out of insulator paste covering all the wiring pattern to form a transfer sheet 4. A via-hole 5 is bored in the transfer sheet 4 at a prescribed place by a carbon dioxide gas laser. In result, an excellent via-hole 5 can be formed by a carbon dioxide gas laser, and laser beam machining can be enhanced in machining speed and long-hour operation can be achieved.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、LSI、ICまたはチ
ップ部品を搭載したセラミック多層配線基板の製造に用
いられる導体ペースト組成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductor paste composition used for manufacturing a ceramic multilayer wiring board on which LSI, IC or chip parts are mounted.

【0002】[0002]

【従来の技術】セラミック多層基板の製造方法としては
グリーンシート積層法と厚膜印刷多層法がよく知られて
おり、広範に利用されている。グリーンシート積層法は
高積層、微細な配線パターンが可能である反面、製造歩
留りの悪さや配線パターン変更への対応力の弱さといっ
た難点があるのに対し、厚膜印刷多層法は工程が簡便で
対応力もよく、製造歩留りもよい反面、配線パターンに
よる基板表面の段差のため、高積層が不可能で微細な配
線パターンに対応できないという課題を有している。こ
れら二者の製造方法の長所を取り入れた方法として配線
パターンを絶縁層中に埋設した構造をもつ転写シートを
セラミック基板上に転写、積層する方法(転写法)が提
案されている。一方、セラミック多層基板の製造技術で
重要なポイントは配線層間を接続する技術であって、一
般に配線層間を接続するには、配線上の所定箇所にビア
孔と呼ばれる穴を形成し、ビア孔に導体材料を充填する
方法が取られている。
2. Description of the Related Art As a method for manufacturing a ceramic multilayer substrate, a green sheet laminating method and a thick film printing multilayer method are well known and widely used. The green sheet stacking method enables high stacking and fine wiring patterns, but on the other hand, it has drawbacks such as poor manufacturing yield and poor ability to change wiring patterns. Although it has good adaptability and good manufacturing yield, it has a problem that it is impossible to achieve high stacking and cannot cope with a fine wiring pattern because of a step on the substrate surface due to the wiring pattern. As a method that takes advantage of these two manufacturing methods, there has been proposed a method (transfer method) in which a transfer sheet having a structure in which a wiring pattern is embedded in an insulating layer is transferred and laminated on a ceramic substrate. On the other hand, an important point in the manufacturing technology of the ceramic multilayer substrate is the technology for connecting the wiring layers. Generally, in order to connect the wiring layers, a hole called a via hole is formed at a predetermined position on the wiring and the via hole is formed. The method of filling with a conductor material is taken.

【0003】[0003]

【発明が解決しようとする課題】グリーンシート積層法
や転写法ではビア孔の形成は一般にパンチングによる方
法と金型による方法がとられている。前者のパンチング
法はコンピュータによる座標制御で一穴ずつビア孔を形
成する方法で、加工時間が長くなり、またパンチングの
ピンが磨耗したり折れたりするというような短所があ
る。後者の金型法は金型により一度に複数穴のビア孔が
加工できるが、金型費用が高いことや設計の変更が困難
であるというような短所がある。以上のようなことか
ら、ビア孔の形成はレーザー加工が最も効果的であると
考えられ、さかんに研究が行われている。図3は従来の
導体ペースト組成物を使用した場合のレーザー加工の状
態を示すものであり、図において1はベースフィルム、
2は導体層、3は絶縁層、4は転写シート、5はビア孔
である。図に示すように導体材料の主成分が銀である配
線パターンを絶縁層3中に埋設した構造の転写シート4
にレーザー加工によりビア孔5を形成しようとする場
合、銀がレーザーを反射し、導体層2と絶縁層3の穴径
が小さくなってしまうなど加工が困難であるという課題
を有する。
In the green sheet laminating method and the transfer method, the via holes are generally formed by a punching method or a die method. The former punching method is a method of forming via holes one by one by coordinate control by a computer, and has the disadvantages that the processing time is long and the punching pins are worn or broken. The latter mold method can process a plurality of via holes at one time by using the mold, but has the disadvantages that the mold cost is high and it is difficult to change the design. From the above, laser processing is considered to be the most effective for forming via holes, and studies have been vigorously conducted. FIG. 3 shows a state of laser processing when a conventional conductor paste composition is used. In FIG. 3, 1 is a base film,
Reference numeral 2 is a conductor layer, 3 is an insulating layer, 4 is a transfer sheet, and 5 is a via hole. As shown in the figure, the transfer sheet 4 has a structure in which a wiring pattern in which the main component of the conductor material is silver is embedded in the insulating layer 3.
When the via hole 5 is to be formed by laser processing, there is a problem that the processing is difficult, for example, silver reflects the laser and the hole diameter of the conductor layer 2 and the insulating layer 3 becomes small.

【0004】本発明は上記課題を解決するものであり、
レーザー加工によるビア孔の形成を可能とすることがで
きる導体ペースト組成物を提供することを目的とする。
The present invention is intended to solve the above problems,
It is an object of the present invention to provide a conductor paste composition capable of forming via holes by laser processing.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に本発明の導体ペースト組成物は、ビア用の導体ペース
ト組成物として導体材料粉末50.0〜75.0重量%
と酸化銀粉末25.0〜50.0重量%からなる無機成
分と、少なくとも有機バインダと溶剤よりなる有機ビヒ
クル成分とを備えるものである。
In order to achieve the above object, the conductor paste composition of the present invention is used as a conductor paste composition for vias, and a conductor material powder of 50.0 to 75.0% by weight is used.
And an inorganic component composed of 25.0 to 50.0% by weight of silver oxide powder, and an organic vehicle component composed of at least an organic binder and a solvent.

【0006】[0006]

【作用】したがって本発明によれば、導体として導体材
料粉末50.0〜75.0重量%と酸化銀粉末25.0
〜50.0重量%からなる無機成分と、少なくとも有機
バインダと溶剤よりなる有機ビヒクル成分とを備えた導
体ペースト組成物を用いるので、レーザー加工によるビ
ア孔の形成が可能になり、加工スピードの向上と長時間
連続運転を実現することができる。
Therefore, according to the present invention, 50.0 to 75.0% by weight of conductor material powder and 25.0% of silver oxide powder are used as the conductor.
Since a conductor paste composition comprising an inorganic component consisting of ˜50.0% by weight and an organic vehicle component consisting of at least an organic binder and a solvent is used, it is possible to form via holes by laser processing and improve processing speed. And continuous operation for a long time can be realized.

【0007】[0007]

【実施例】以下本発明の一実施例について、図1,図2
とともに図3と同一部分には同一番号を付して詳しい説
明を省略し、相違する点について説明する。図1は本発
明の一実施例の導体ペースト組成物を使用した転写シー
トの炭酸ガスレーザーにより穿孔したビア孔の断面の模
式図であり、図2(a)、(b)、(c)は本発明の一
実施例の導体ペースト組成物を使用したセラミック多層
配線基板の製造方法における各工程の温度プロフィルを
示す図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.
At the same time, the same parts as those in FIG. 3 are denoted by the same reference numerals, detailed description thereof will be omitted, and different points will be described. FIG. 1 is a schematic view of a cross section of a via hole punched by a carbon dioxide gas laser of a transfer sheet using the conductor paste composition of one embodiment of the present invention, and FIGS. 2 (a), 2 (b) and 2 (c) are It is a figure which shows the temperature profile of each process in the manufacturing method of the ceramic multilayer wiring board using the conductor paste composition of one Example of this invention.

【0008】(実施例1)導体ペーストの原料として、
平均粒径が約1ミクロンの銀粉末(福田金属箔粉社製)
を44.3重量%、平均粒径が1〜3ミクロンの酸化銀
粉末(半井化学社製)を44.3重量%、バインダとし
てブチラール系樹脂+ベンジルブチルフタレートを9.
0重量%、溶剤としてブチルカルビトールを2.4重量
%をそれぞれ用意し、これらを3本ロールにて充分に混
合、混練して配線用の導体ペーストを作製した。
(Example 1) As a raw material of a conductor paste,
Silver powder with an average particle size of about 1 micron (Fukuda Metal Foil Powder Co., Ltd.)
44.3% by weight, 44.3% by weight of silver oxide powder having an average particle diameter of 1 to 3 microns (manufactured by Hanai Chemical Co., Ltd.), and butyral resin + benzylbutyl phthalate as a binder.
0% by weight and 2.4% by weight of butyl carbitol as a solvent were prepared, respectively, and these were sufficiently mixed and kneaded with a three-roll to prepare a conductor paste for wiring.

【0009】つぎにビア用導体ペーストの原料として、
平均粒径が約1ミクロンの銀粉末(福田金属箔粉社製)
を41.7重量%、ガラス粉末(日本電気硝子社製、G
A13、軟化温度850℃)を41.7重量%、バイン
ダとしてエチルセルロース系樹脂を0.8重量%、溶剤
としてテルピネオールを15.8重量%、それぞれ用意
し、これらを3本ロールにて充分に混合、混練してビア
用導体ペーストを作製した。
Next, as a raw material for the conductor paste for vias,
Silver powder with an average particle size of about 1 micron (Fukuda Metal Foil Powder Co., Ltd.)
41.7% by weight, glass powder (Nippon Electric Glass Co., G
A13, softening temperature of 850 ° C.) is 41.7% by weight, ethylcellulose resin is 0.8% by weight as a binder, and terpineol is 15.8% by weight as a solvent. These are thoroughly mixed with a three-roll mill. Then, they were kneaded to prepare a conductor paste for vias.

【0010】さらに絶縁体ペーストの原料として、絶縁
体粉末(アルミナ+ホウケイ酸ガラス粉末)を70重量
%、バインダとしてブチラール系樹脂+ベンジルブチル
フタレートを15重量%、溶剤としてブチルカルビトー
ルを15重量%をそれぞれ用意し、これらを3本ロール
にて充分に混合、混練して絶縁体ペーストを作製した。
Further, as a raw material of the insulating paste, 70% by weight of insulating powder (alumina + borosilicate glass powder), 15% by weight of butyral resin + benzyl benzyl phthalate as a binder and 15% by weight of butyl carbitol as a solvent. Were prepared, and these were sufficiently mixed and kneaded with a three-roll to prepare an insulating paste.

【0011】図1に示すように表面に離型処理を施した
ベースフィルム(PET)1上に上記のように作製した
配線用の導体ペーストでスクリーン印刷により導体層
(配線パターン)2を形成し、さらに絶縁体ペーストで
配線パターン全体を覆うように絶縁層3を形成して転写
シート4を作製した。同様の順序で各層の配線パターン
を形成した転写シート4を作製し、各転写シート4の所
定箇所にビア孔5を炭酸ガスレーザーによって穿孔し
た。つぎに96%アルミナ基板(図示せず)上に転写シ
ート4を60℃、80kg/cm2の条件で熱転写し、上記
のビア用導体ペースト(図示せず)をビア孔5に充填し
た後にベースフィルム1をはがし、同様の順序で複数の
転写シート4を積層して積層体(図示せず)を得た。
As shown in FIG. 1, a conductor layer (wiring pattern) 2 is formed on a base film (PET) 1 whose surface has been subjected to a mold release process by screen printing with the conductor paste for wiring prepared as described above. Further, an insulating layer 3 was formed so as to cover the entire wiring pattern with an insulating paste, and a transfer sheet 4 was produced. A transfer sheet 4 having a wiring pattern of each layer formed in the same order was prepared, and a via hole 5 was punched at a predetermined position of each transfer sheet 4 by a carbon dioxide laser. Next, the transfer sheet 4 is thermally transferred onto a 96% alumina substrate (not shown) under the conditions of 60 ° C. and 80 kg / cm 2 , and the above-mentioned via conductor paste (not shown) is filled in the via holes 5 and then the base is formed. The film 1 was peeled off, and a plurality of transfer sheets 4 were laminated in the same order to obtain a laminate (not shown).

【0012】つぎに得られた積層体を加熱炉内の大気中
で脱バインダ処理した。この際の加熱条件は図2(a)
に示すピーク温度275℃、ピーク温度保持時間360
分の温度プロファイルとした。
Next, the obtained laminated body was subjected to binder removal treatment in the atmosphere in a heating furnace. The heating conditions at this time are shown in FIG.
Peak temperature 275 ° C, peak temperature holding time 360
The temperature profile was minute.

【0013】その後、積層体を加熱炉内の大気中で焼
結、焼成した。その加熱条件は図2(b)に示すピーク
温度900℃、ピーク温度保持時間10分の温度プロフ
ァイルとした。最後に最上部の配線を厚膜導体ペースト
(京都エレックス社製、DD2332H)でスクリーン
印刷により形成し、大気中で焼成した。その加熱条件は
図2(c)に示すピーク温度850℃、ピーク温度保持
時間10分の温度プロファイルとした。
After that, the laminate was sintered and fired in the air in the heating furnace. The heating conditions were such that the peak temperature was 900 ° C. and the peak temperature holding time was 10 minutes as shown in FIG. 2B. Finally, the uppermost wiring was formed by screen printing with a thick film conductor paste (DD2332H, manufactured by Kyoto Elex Co., Ltd.) and baked in the atmosphere. The heating conditions were a temperature profile having a peak temperature of 850 ° C. and a peak temperature holding time of 10 minutes shown in FIG.

【0014】なお本実施例に対する比較例として、酸化
銀を含有しない無機成分が銀粉のみの導体ペーストを作
製し、同様に炭酸ガスレーザーによりビア孔5を穿孔し
たところ、図3に示すようにベースフィルム1の穴径よ
り導体層2と絶縁層3の穴径の方が小さくなり、絶縁層
3が盛り上がるような形状となったが、その原因として
は炭酸ガスレーザーが導体層2中の銀粉に反射されたた
めにこのようなビア孔になったものと思われる。
As a comparative example to this example, a conductor paste containing only silver powder as an inorganic component containing no silver oxide was prepared, and a via hole 5 was similarly drilled by a carbon dioxide laser. As shown in FIG. The hole diameters of the conductor layer 2 and the insulating layer 3 were smaller than the hole diameter of the film 1, and the insulating layer 3 was bulged. The cause was that the carbon dioxide laser generated silver powder in the conductor layer 2. It is thought that such a via hole was formed due to the reflection.

【0015】(実施例2)導体ペーストの原料として、
平均粒径が約1ミクロンの銀粉末(福田金属箔粉社製)
を40.0重量%、平均粒径が約1ミクロンのパラジウ
ム粉末(福田金属箔粉社製)を4.3重量%、平均粒径
が1〜3ミクロンの酸化銀粉末(半井化学社製)を4
4.3重量%、バインダとしてブチラール系樹脂+ベン
ジルブチルフタレートを9.0重量%、溶剤としてブチ
ルカルビトールを2.4重量%をそれぞれ用意し、これ
らを3本ロールにて充分に混合、混練して配線用の導体
ペーストを作製した。
(Example 2) As a raw material of the conductor paste,
Silver powder with an average particle size of about 1 micron (Fukuda Metal Foil Powder Co., Ltd.)
40.0% by weight, palladium powder having an average particle diameter of about 1 micron (manufactured by Fukuda Metal Foil Powder Co., Ltd.) 4.3% by weight, silver oxide powder having an average particle diameter of 1 to 3 microns (manufactured by Hanai Chemical Co., Ltd.) 4
4.3 wt%, butyral resin + benzyl butyl phthalate 9.0 wt% as a binder, and butyl carbitol 2.4 wt% as a solvent were prepared respectively, and these were thoroughly mixed and kneaded by a three-roll mill. Then, a conductor paste for wiring was prepared.

【0016】つぎにビア用導体ペーストの原料として、
平均粒径が約1〜3ミクロンの酸化銅粉末(京都エレッ
クス社製、CB250粉砕)を41.7重量%、ガラス
粉末(日本電気硝子社製、GA13、軟化温度850
℃)を41.7重量%、バインダとしてエチルセルロー
ス系樹脂を0.8重量%、溶剤としてテルピネオールを
15.8重量%、それぞれ用意し、これらを3本ロール
にて充分に混合、混練してビア用導体ペーストを作製し
た。
Next, as a raw material for the via conductor paste,
41.7% by weight of copper oxide powder (manufactured by Kyoto Elex Co., Ltd., CB250 crushed) having an average particle size of about 1 to 3 microns, glass powder (Nippon Electric Glass Co., Ltd., GA13, softening temperature 850)
41.7% by weight, ethyl cellulose resin as a binder 0.8% by weight, and terpineol 15.8% by weight as a solvent, respectively. These are thoroughly mixed and kneaded with a three-roll to prepare a beer. A conductor paste for use was prepared.

【0017】さらに絶縁体ペーストの原料として、(実
施例1)と同様の絶縁体粉末を70重量%、バインダと
してブチラール系樹脂+ベンジルブチルフタレートを1
5重量%、溶剤としてブチルカルビトールを15重量%
をそれぞれ用意し、これらを3本ロールにて充分に混
合、混練して絶縁体ペーストを作製した。
Further, as the raw material of the insulating paste, 70% by weight of the same insulating powder as in (Example 1) and 1% of butyral resin + benzylbutyl phthalate as a binder are used.
5% by weight, butyl carbitol as a solvent 15% by weight
Were prepared, and these were sufficiently mixed and kneaded with a three-roll to prepare an insulating paste.

【0018】図1に示すように表面に離型処理を施した
ベースフィルム(PET)1上に上記のように作製した
配線用の導体ペーストでスクリーン印刷により導体層
(配線パターン)2を形成し、さらに絶縁体ペーストで
配線パターン全体を覆うように絶縁層3を形成して転写
シート4を作製した。同様の順序で各層の配線パターン
を形成した転写シート4を作製し、各転写シート4の所
定箇所にビア孔5を炭酸ガスレーザーによって穿孔し
た。つぎに96%アルミナ基板(図示せず)上に転写シ
ート4を60℃、80kg/cm2の条件で熱転写し、上記
のように作製したビア用導体ペースト(図示せず)をビ
ア孔5に充填した後にベースフィルム1をはがし、同様
の順序で複数の転写シート4を積層して積層体(図示せ
ず)を得た。
As shown in FIG. 1, a conductor layer (wiring pattern) 2 is formed on a base film (PET) 1 whose surface is subjected to a mold release treatment, by screen printing with the conductor paste for wiring prepared as described above. Further, an insulating layer 3 was formed so as to cover the entire wiring pattern with an insulating paste, and a transfer sheet 4 was produced. A transfer sheet 4 having a wiring pattern of each layer formed in the same order was prepared, and a via hole 5 was punched at a predetermined position of each transfer sheet 4 by a carbon dioxide laser. Next, the transfer sheet 4 is thermally transferred onto a 96% alumina substrate (not shown) under the conditions of 60 ° C. and 80 kg / cm 2 , and the via conductor paste (not shown) prepared as described above is placed in the via holes 5. After filling, the base film 1 was peeled off, and a plurality of transfer sheets 4 were laminated in the same order to obtain a laminate (not shown).

【0019】つぎに得られた積層体を加熱炉内の大気中
で脱バインダ処理した。この際の加熱条件は(実施例
1)と同条件とした。
Next, the obtained laminated body was subjected to binder removal treatment in the atmosphere in the heating furnace. The heating conditions at this time were the same as those in (Example 1).

【0020】なお、積層体の焼結、焼成条件、および厚
膜導体ペーストによる最上部の配線形成条件も(実施例
1)と同条件で行った。
The laminated body was sintered and fired under the same conditions as in (Example 1) under the conditions for forming the uppermost wiring with the thick film conductor paste.

【0021】なお本実施例に対する比較例として、酸化
銀を含有しない無機成分が銀粉のみの導体ペーストを作
製し、同様に炭酸ガスレーザーによりビア孔5を穿孔し
たところ、図3に示すように(実施例1)における比較
例と同様の結果となった。
As a comparative example to this example, a conductor paste containing no silver oxide and containing only silver powder as an inorganic component was prepared, and the via holes 5 were similarly punched by a carbon dioxide gas laser. As shown in FIG. The result was similar to that of the comparative example in Example 1).

【0022】また導体ペースト組成物中の銀とパラジウ
ムの比率を変化させたものを作製して同様に炭酸ガスレ
ーザーによりビア孔5を穿孔したところ、パラジウム含
有量が20重量%以上のものは酸化銀を含有しなくても
炭酸ガスレーザーによりビア孔5をきれいに穿孔できる
ことが確認されたが、パラジウム含有量が大きくなると
配線抵抗が高くなるので配線基板としては好ましくない
と考えられる。
Further, the conductor paste composition was prepared by changing the ratio of silver and palladium, and the via hole 5 was similarly drilled by the carbon dioxide gas laser. When the palladium content was 20% by weight or more, it was oxidized. It was confirmed that the via holes 5 could be finely drilled by a carbon dioxide laser without containing silver, but it is considered to be unfavorable as a wiring board because the wiring resistance becomes higher when the palladium content increases.

【0023】なお、実施例において導体ペースト組成物
中の導電成分は銀粉末または銀とパラジウムの混合粉末
を使用したが、銀とパラジウムの合金粉末を使用するこ
とも可能である。
In the examples, silver powder or a mixed powder of silver and palladium was used as the conductive component in the conductor paste composition, but it is also possible to use an alloy powder of silver and palladium.

【0024】[0024]

【発明の効果】上記実施例より明らかなように本発明
は、導体材料粉末50.0〜75.0重量%と酸化銀粉
末25.0〜50.0重量%からなる無機成分と、少な
くとも有機バインダと溶剤よりなる有機ビヒクル成分と
を備えているためにレーザー加工による優れたビア孔の
形状が可能となり、加工スピードの向上と長時間連続運
転を実現することができる。しかもレーザー吸収材とし
て用いている酸化銀は熱処理により金属銀となるので導
体抵抗を極端に上げることはない。
As is apparent from the above examples, the present invention is based on an inorganic component consisting of 50.0 to 75.0% by weight of conductor material powder and 25.0 to 50.0% by weight of silver oxide powder, and at least an organic component. Since the binder and the organic vehicle component made of a solvent are provided, an excellent via hole shape can be formed by laser processing, and the processing speed can be improved and continuous operation for a long time can be realized. Moreover, since the silver oxide used as the laser absorbing material becomes metallic silver by the heat treatment, the conductor resistance is not extremely increased.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の導体ペースト組成物を使用
して得られた転写シートの部分断面図
FIG. 1 is a partial sectional view of a transfer sheet obtained by using a conductor paste composition according to an embodiment of the present invention.

【図2】(a)は本発明の一実施例の導体ペースト組成
物を用いて多層配線基板を製造する場合の脱バインダ工
程の温度プロファイルを示す関係図 (b)は同焼結、焼成工程の温度プロファイルを示す関
係図 (c)は同厚膜導体ペーストの焼成工程の温度プロファ
イルを示す関係図
FIG. 2A is a relationship diagram showing a temperature profile of a binder removal step in the case of manufacturing a multilayer wiring board using the conductor paste composition of one embodiment of the present invention. FIG. 2B is the same sintering and firing step. (C) is a relationship diagram showing a temperature profile in the firing process of the thick-film conductor paste.

【図3】従来の導体ペースト組成物を使用して得られた
転写シートの部分断面図
FIG. 3 is a partial sectional view of a transfer sheet obtained by using a conventional conductor paste composition.

【符号の説明】[Explanation of symbols]

1 ベースフィルム 2 導体層 3 絶縁層 4 転写シート 5 ビア孔 1 Base Film 2 Conductor Layer 3 Insulating Layer 4 Transfer Sheet 5 Via Hole

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】セラミック多層配線基板の製造に使用する
導体ペースト組成物であって、導体材料粉末50.0〜
75.0重量%と酸化銀粉末25.0〜50.0重量%
からなる無機成分と、少なくとも有機バインダと溶剤よ
りなる有機ビヒクル成分とを備えた導体ペースト組成
物。
1. A conductor paste composition for use in manufacturing a ceramic multilayer wiring board, comprising 50.0 to 50% of conductor material powder.
75.0% by weight and silver oxide powder 25.0-50.0% by weight
2. A conductor paste composition comprising an inorganic component consisting of and an organic vehicle component consisting of at least an organic binder and a solvent.
【請求項2】導体材料が、銀、パラジウムまたはそれら
の合金である請求項1記載の導体ペースト組成物。
2. The conductor paste composition according to claim 1, wherein the conductor material is silver, palladium or an alloy thereof.
JP4167202A 1992-06-25 1992-06-25 Conductive paste composition Pending JPH0613756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4167202A JPH0613756A (en) 1992-06-25 1992-06-25 Conductive paste composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4167202A JPH0613756A (en) 1992-06-25 1992-06-25 Conductive paste composition

Publications (1)

Publication Number Publication Date
JPH0613756A true JPH0613756A (en) 1994-01-21

Family

ID=15845320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4167202A Pending JPH0613756A (en) 1992-06-25 1992-06-25 Conductive paste composition

Country Status (1)

Country Link
JP (1) JPH0613756A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007207604A (en) * 2006-02-02 2007-08-16 Kyoto Elex Kk Conductive paste, and ceramic multi-layer circuit board using the same
US7771627B2 (en) 2002-04-10 2010-08-10 Fujikura Ltd. Conductive composition
US9812624B2 (en) 2008-01-17 2017-11-07 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7771627B2 (en) 2002-04-10 2010-08-10 Fujikura Ltd. Conductive composition
JP2007207604A (en) * 2006-02-02 2007-08-16 Kyoto Elex Kk Conductive paste, and ceramic multi-layer circuit board using the same
US9812624B2 (en) 2008-01-17 2017-11-07 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device
US10573795B2 (en) 2008-01-17 2020-02-25 Nichia Corporation Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device
US10950770B2 (en) 2008-01-17 2021-03-16 Nichia Corporation Method for producing an electronic device
US11652197B2 (en) 2008-01-17 2023-05-16 Nichia Corporation Method for producing an electronic device

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