JPH0613303A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPH0613303A
JPH0613303A JP16866592A JP16866592A JPH0613303A JP H0613303 A JPH0613303 A JP H0613303A JP 16866592 A JP16866592 A JP 16866592A JP 16866592 A JP16866592 A JP 16866592A JP H0613303 A JPH0613303 A JP H0613303A
Authority
JP
Japan
Prior art keywords
wafer chuck
supporting portion
contact
semiconductor substrate
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP16866592A
Other languages
Japanese (ja)
Inventor
Ayumi Watanabe
歩 渡▲邊▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Priority to JP16866592A priority Critical patent/JPH0613303A/en
Publication of JPH0613303A publication Critical patent/JPH0613303A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details

Abstract

PURPOSE:To make it possible to produce a semiconductor device in a manner that a first wafer chuck supporting part area will not overlap with a second wafer chuck supporting part area. CONSTITUTION:The titled production method consists of resin coating step in which a semiconductor board is fixed with a first wafer chuck 1, and exposing step in which the semiconductor board is fixed with a second wafer chuck 2, and a semiconductor device is produced in a manner that a supporting area 1a for the first wafer chuck 1 will not overlap with a supporting area 2a for the second wafer chuck 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置の製造工程
に用いるウエーハチャックによる半導体基板の支持方法
の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a method for supporting a semiconductor substrate by a wafer chuck used in a semiconductor device manufacturing process.

【0002】半導体装置のパターンサイズの微細化に伴
い、近年の露光装置においては焦点合わせ精度の余裕
度、即ち、フォーカスマージンが少なくなっているため
に、半導体基板や液晶基板の裏面にゴミが付着すると、
半導体基板や液晶基板に歪みが生じ、露光処理を行う場
合に焦点ずれが生じている。
With the miniaturization of the pattern size of semiconductor devices, the margin of focusing accuracy, that is, the focus margin has decreased in recent exposure apparatuses, so that dust adheres to the back surfaces of semiconductor substrates and liquid crystal substrates. Then,
Distortion occurs in the semiconductor substrate or the liquid crystal substrate, and defocus occurs when the exposure process is performed.

【0003】以上のような状況からレジスト塗布装置の
ウエーハチャックの支持部との接触により半導体基板に
付着したゴミが、露光装置のウエーハチャックの支持部
に付着しないように処理することが可能な半導体装置の
製造方法が要望されている。
Under the circumstances as described above, it is possible to process the semiconductor so that dust adhered to the semiconductor substrate due to contact with the supporting portion of the wafer chuck of the resist coating apparatus does not adhere to the supporting portion of the wafer chuck of the exposure apparatus. There is a need for a device manufacturing method.

【0004】[0004]

【従来の技術】従来のレジスト塗布装置のウエーハチャ
ックの支持部構造及び露光装置のウエーハチャックの支
持部構造について図3により詳細に説明する。
2. Description of the Related Art A conventional support structure of a wafer chuck of a resist coating apparatus and a support structure of a wafer chuck of an exposure apparatus will be described in detail with reference to FIG.

【0005】図3は従来のレジスト塗布装置のウエーハ
チャックの支持部構造と露光装置のウエーハチャックの
支持部構造を示す図である。従来のレジスト塗布装置の
ウエーハチャック21には、図3(a) に示すような接触面
を有する支持部21a が設けられており、この支持部21a
は他の領域よりも少し突出している。
FIG. 3 is a diagram showing a support structure of a wafer chuck of a conventional resist coating apparatus and a support structure of a wafer chuck of an exposure apparatus. A wafer chuck 21 of a conventional resist coating apparatus is provided with a supporting portion 21a having a contact surface as shown in FIG. 3 (a).
Is a little more prominent than other areas.

【0006】露光装置のウエーハチャック2には、図3
(b) に示すような接触面を有する支持部2aが設けられて
おり、この支持部2aは他の領域よりも少し突出してい
る。支持部21a との接触による半導体基板の裏面の接触
跡23a と、支持部2aとの接触による半導体基板の裏面の
接触跡3bを重ね合わすと、図3(c) に示すように部分的
に重複するので、このようなレジスト塗布装置を用いて
半導体基板にレジストを塗布し、引続き露光装置を用い
て半導体基板を露光する工程においては、レジスト塗布
装置において支持部21a に付着したレジストが半導体基
板の裏面に付着した場合、この半導体基板を露光装置の
ウエーハチャック2の支持部2aに載置すると、このレジ
ストがウエーハチャック2の支持部2aに付着する。
The wafer chuck 2 of the exposure apparatus is shown in FIG.
A supporting portion 2a having a contact surface as shown in (b) is provided, and the supporting portion 2a projects slightly from other regions. When the contact mark 23a on the back surface of the semiconductor substrate due to the contact with the supporting portion 21a and the contact mark 3b on the back surface of the semiconductor substrate due to the contact with the supporting portion 2a are overlapped, as shown in FIG. Therefore, in the step of applying the resist to the semiconductor substrate using such a resist coating apparatus and subsequently exposing the semiconductor substrate using the exposure apparatus, the resist adhered to the supporting portion 21a in the resist coating apparatus is the semiconductor substrate. When the semiconductor substrate is attached to the back surface, when the semiconductor substrate is placed on the support portion 2a of the wafer chuck 2 of the exposure apparatus, the resist is attached to the support portion 2a of the wafer chuck 2.

【0007】このような半導体基板の裏面へのレジスト
の付着が繰り返されると、ウエーハチャック2の支持部
2aに残留したレジストが、露光装置における焦点合わせ
の障害になっている。
When the adhesion of the resist to the back surface of the semiconductor substrate is repeated, the supporting portion of the wafer chuck 2 is supported.
The resist remaining on 2a is an obstacle to focusing in the exposure apparatus.

【0008】[0008]

【発明が解決しようとする課題】以上説明した従来のレ
ジスト塗布装置においては、レジスト塗布装置のウエー
ハチャックの支持部との接触による半導体基板の裏面の
接触跡と、露光装置のウエーハチャックの支持部との接
触による半導体基板の裏面の接触跡とが部分的に重ね合
わされるので、この重ね合わされる露光装置のウエーハ
チャックの支持部の表面にはレジストが残留し、このレ
ジストによって露光装置の支持部に載置した半導体基板
に歪みが生じ、焦点を合わせる場合に焦点ずれが生じる
という問題点があった。
In the conventional resist coating apparatus described above, the contact mark on the back surface of the semiconductor substrate due to the contact with the supporting section of the wafer chuck of the resist coating apparatus and the supporting section of the wafer chuck of the exposure apparatus. Since the contact marks on the back surface of the semiconductor substrate due to the contact with the semiconductor substrate are partially overlapped with each other, the resist remains on the surface of the supporting portion of the wafer chuck of the exposure apparatus which is superposed, and the resist causes the supporting portion of the exposure apparatus to be supported. There is a problem that the semiconductor substrate placed on the substrate is distorted and defocus occurs when focusing.

【0009】本発明は以上のような状況から、第1のウ
エーハチャックの支持部の領域と、第2のウエーハチャ
ックの支持部の領域が重ならないように処理する半導体
装置の製造方法の提供を目的としたものである。
Under the circumstances as described above, the present invention provides a method for manufacturing a semiconductor device in which processing is performed so that the area of the supporting portion of the first wafer chuck and the area of the supporting portion of the second wafer chuck do not overlap. It is intended.

【0010】[0010]

【課題を解決するための手段】本発明の半導体装置の製
造方法は、半導体基板を第1のウエーハチャックで固定
して樹脂を塗布する工程と、この半導体基板を第2のウ
エーハチャックで固定して露光する工程を有し、この第
1のウエーハチャックの支持部の領域と、この第2のウ
エーハチャックの支持部の領域が重ならないように処理
するように構成する。
A method of manufacturing a semiconductor device according to the present invention comprises a step of fixing a semiconductor substrate with a first wafer chuck and applying a resin, and a step of fixing this semiconductor substrate with a second wafer chuck. And a step of exposing the second wafer chuck to a region where the supporting portion of the first wafer chuck does not overlap the region of the supporting portion of the second wafer chuck.

【0011】[0011]

【作用】即ち本発明においては、露光装置のウエーハチ
ャックの支持部以外の領域に、レジスト塗布装置のウエ
ーハチャックの支持部を設け、このレジスト塗布装置の
支持部で半導体基板を支持してレジストを塗布するの
で、万一レジストがウエーハチャックの支持部を介して
半導体基板の支持面に付着して接触跡がついても、露光
装置のウエーハチャックの支持部とは重ね合わされなく
なっているから、露光装置のウエーハチャックの支持部
にはレジストが付着しないので、半導体基板に歪みが生
じない、したがって焦点を合わせる場合に焦点ずれが生
じるのを防止することが可能となる。
That is, in the present invention, the support portion of the wafer chuck of the resist coating apparatus is provided in the area other than the support portion of the wafer chuck of the exposure apparatus, and the semiconductor substrate is supported by the support portion of the resist coating apparatus to support the resist. Since the resist is applied, even if the resist adheres to the supporting surface of the semiconductor substrate through the supporting portion of the wafer chuck and a contact mark is formed, the resist is not overlapped with the supporting portion of the wafer chuck of the exposure apparatus. Since the resist does not adhere to the supporting portion of the wafer chuck, it is possible to prevent the semiconductor substrate from being distorted, and thus to prevent defocusing when focusing.

【0012】[0012]

【実施例】以下図1により本発明による第1の実施例に
ついて、図2により本発明による第2の実施例について
詳細に説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment according to the present invention will be described below with reference to FIG. 1, and a second embodiment according to the present invention will be described in detail with reference to FIG.

【0013】図1は本発明による第1の実施例のレジス
ト塗布装置のウエーハチャックの支持部構造と露光装置
のウエーハチャックの支持部構造を示す図、図2は本発
明による第2の実施例のレジスト塗布装置のウエーハチ
ャックの支持部構造と露光装置のウエーハチャックの支
持部構造を示す図である。
FIG. 1 is a diagram showing a support structure of a wafer chuck of a resist coating apparatus and a support structure of a wafer chuck of an exposure apparatus according to the first embodiment of the present invention, and FIG. 2 is a second embodiment of the present invention. FIG. 3 is a diagram showing a support structure of a wafer chuck of the resist coating apparatus and a support structure of a wafer chuck of the exposure apparatus of FIG.

【0014】本発明による第1の実施例のウエーハチャ
ック1には、図1(a) に示すような接触面を有する支持
部1aが設けられており、この支持部1aは他の領域よりも
少し突出している。
The wafer chuck 1 of the first embodiment according to the present invention is provided with a supporting portion 1a having a contact surface as shown in FIG. 1 (a), and this supporting portion 1a is provided more than other areas. It projects a little.

【0015】露光装置のウエーハチャック2には、図1
(b) に示すような接触面を有する支持部2aが設けられて
おり、この支持部2aは他の領域よりも少し突出してい
る。支持部1aとの接触による半導体基板の裏面の接触跡
3aと、支持部2aとの接触による半導体基板の裏面の接触
跡3bを図1(c) に示すように重ね合わすと、レジスト塗
布装置のウエーハチャック1の支持部1aの丸い支持部と
の接触による接触跡3aが、露光装置のウエーハチャック
2の支持部2aとの接触による接触跡3bの中央部にくるか
ら、接触跡3aと接触跡3bとが重ね合わされないので、半
導体基板の支持面にレジストが付着しても、露光装置の
ウエーハチャック2の支持部2aにはレジストが付着しな
い。したがって焦点を合わせる場合に焦点ずれが生じる
のを防止することが可能である。
The wafer chuck 2 of the exposure apparatus is shown in FIG.
A supporting portion 2a having a contact surface as shown in (b) is provided, and the supporting portion 2a projects slightly from other regions. Trace of contact on the back surface of the semiconductor substrate due to contact with the support 1a
When the contact mark 3b on the back surface of the semiconductor substrate due to the contact between 3a and the supporting portion 2a is overlapped as shown in FIG. 1 (c), the contact with the round supporting portion of the supporting portion 1a of the wafer chuck 1 of the resist coating apparatus is performed. The contact trace 3a due to comes to the center of the contact trace 3b due to the contact with the supporting portion 2a of the wafer chuck 2 of the exposure apparatus, so that the contact trace 3a and the contact trace 3b do not overlap each other, so that the resist is applied to the supporting surface of the semiconductor substrate. Resist adheres to the supporting portion 2a of the wafer chuck 2 of the exposure apparatus. Therefore, it is possible to prevent defocus from occurring when focusing.

【0016】本発明による第2の実施例のウエーハチャ
ック11には、図2(a) に示すような接触面を有する支持
部11a が設けられており、この支持部11a は他の領域よ
りも少し突出している。
The wafer chuck 11 of the second embodiment according to the present invention is provided with a support portion 11a having a contact surface as shown in FIG. 2 (a), and this support portion 11a is provided more than other areas. It projects a little.

【0017】露光装置のウエーハチャック2には、図2
(b) に示すような接触面を有する支持部2aが設けられて
おり、この支持部2aは他の領域よりも少し突出してい
る。支持部11a との接触による半導体基板の裏面の接触
跡13a と、支持部2aとの接触による半導体基板の裏面の
接触跡3bを図2(c) に示すように重ね合わすと、露光装
置のウエーハチャック2の支持部2aが、レジスト塗布装
置のウエーハチャック11の支持部11a の中心の丸い接触
部と周囲の輪状の接触部の間にあるので、この第2の実
施例においては半導体基板がウエーハチャックの中心を
軸として回転しても、レジスト塗布装置のウエーハチャ
ック11による接触跡13a と露光装置のウエーハチャック
2の支持部2aによる接触跡3bとが重ね合わされることが
なくなり、第1図の実施例よりも更に有利である。
The wafer chuck 2 of the exposure apparatus is shown in FIG.
A supporting portion 2a having a contact surface as shown in (b) is provided, and the supporting portion 2a projects slightly from other regions. When the contact mark 13a on the back surface of the semiconductor substrate due to the contact with the supporting portion 11a and the contact mark 3b on the back surface of the semiconductor substrate due to the contact with the supporting portion 2a are superposed as shown in FIG. Since the supporting portion 2a of the chuck 2 is located between the round contact portion at the center of the supporting portion 11a of the wafer chuck 11 of the resist coating apparatus and the peripheral ring-shaped contact portion, the semiconductor substrate is used as the wafer in this second embodiment. Even if the chuck is rotated about its center, the contact mark 13a by the wafer chuck 11 of the resist coating apparatus and the contact mark 3b by the support section 2a of the wafer chuck 2 of the exposure apparatus are not overlapped, and the contact mark 3b of FIG. It is even more advantageous than the embodiment.

【0018】このように、露光装置のウエーハチャック
2の支持部2aの領域以外に、レジスト塗布装置のウエー
ハチャックの支持部を設ければ、レジスト塗布装置にお
いて万一半導体基板の支持部面にレジストが付着して
も、露光装置のウエーハチャック2の支持部2aにレジス
トが付着しないから、焦点を合わせる場合に焦点ずれが
生じるのを防止することが可能である。
As described above, if the wafer chuck supporting portion of the resist coating apparatus is provided in addition to the area of the supporting portion 2a of the wafer chuck 2 of the exposure apparatus, the resist coating apparatus should resist the resist on the supporting portion surface of the semiconductor substrate. Even if adheres, the resist does not adhere to the supporting portion 2a of the wafer chuck 2 of the exposure apparatus, so that it is possible to prevent defocusing when focusing.

【0019】[0019]

【発明の効果】以上の説明から明らかなように、本発明
によれば極めて簡単なレジスト塗布装置のウエーハチャ
ックの支持部の形状の改良により、露光装置における焦
点ずれが生じるのを防止することが可能となる利点があ
り、著しい経済的及び、信頼性向上の効果が期待できる
レジスト塗布装置の提供が可能である。
As is apparent from the above description, according to the present invention, it is possible to prevent the occurrence of defocus in the exposure apparatus by improving the shape of the support portion of the wafer chuck of the resist coating apparatus which is extremely simple. It is possible to provide a resist coating apparatus which has the advantage that it can be realized and which can be expected to have a remarkable economic effect and reliability improvement effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明による第1の実施例のレジスト塗布装
置のウエーハチャックの支持部構造と露光装置のウエー
ハチャックの支持部構造を示す図、
FIG. 1 is a diagram showing a support structure of a wafer chuck of a resist coating apparatus and a support structure of a wafer chuck of an exposure apparatus according to a first embodiment of the present invention,

【図2】 本発明による第2の実施例のレジスト塗布装
置のウエーハチャックの支持部構造と露光装置のウエー
ハチャックの支持部構造を示す図、
FIG. 2 is a diagram showing a support structure of a wafer chuck of a resist coating apparatus and a support structure of a wafer chuck of an exposure apparatus according to a second embodiment of the present invention,

【図3】 従来のレジスト塗布装置のウエーハチャック
の支持部構造と露光装置のウエーハチャックの支持部構
造を示す図、
FIG. 3 is a diagram showing a support structure of a wafer chuck of a conventional resist coating apparatus and a support structure of a wafer chuck of an exposure apparatus,

【符号の説明】[Explanation of symbols]

1,11はウエーハチャック、1a,11aは支持部、2はウエー
ハチャック、2aは支持部、3a,13aは接触跡、3bは接触
跡、
1 and 11 are wafer chucks, 1a and 11a are support parts, 2 is a wafer chuck, 2a is support parts, 3a and 13a are contact marks, 3b is contact marks,

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板を第1のウエーハチャックで
固定して樹脂を塗布する工程と、該半導体基板を第2の
ウエーハチャックで固定して露光する工程を有し、該第
1のウエーハチャックの支持部の領域と、該第2のウエ
ーハチャックの支持部の領域が重ならないように処理す
ることを特徴とする半導体装置の製造方法。
1. A first wafer chuck comprising the steps of fixing a semiconductor substrate with a first wafer chuck and applying a resin, and fixing the semiconductor substrate with a second wafer chuck and exposing it. The method for manufacturing a semiconductor device, wherein the processing is performed so that the area of the supporting portion of the second wafer chuck does not overlap the area of the supporting portion of the second wafer chuck.
JP16866592A 1992-06-26 1992-06-26 Production of semiconductor device Withdrawn JPH0613303A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16866592A JPH0613303A (en) 1992-06-26 1992-06-26 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16866592A JPH0613303A (en) 1992-06-26 1992-06-26 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0613303A true JPH0613303A (en) 1994-01-21

Family

ID=15872233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16866592A Withdrawn JPH0613303A (en) 1992-06-26 1992-06-26 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0613303A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100745667B1 (en) * 2000-09-05 2007-08-02 캐스케이드 마이크로테크 인코포레이티드 Chuck for holding a device under test

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100745667B1 (en) * 2000-09-05 2007-08-02 캐스케이드 마이크로테크 인코포레이티드 Chuck for holding a device under test

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