JPH06112450A - Layout of block of semiconductor integrated circuit - Google Patents

Layout of block of semiconductor integrated circuit

Info

Publication number
JPH06112450A
JPH06112450A JP26098292A JP26098292A JPH06112450A JP H06112450 A JPH06112450 A JP H06112450A JP 26098292 A JP26098292 A JP 26098292A JP 26098292 A JP26098292 A JP 26098292A JP H06112450 A JPH06112450 A JP H06112450A
Authority
JP
Japan
Prior art keywords
wiring
pitch
logic circuit
block
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26098292A
Other languages
Japanese (ja)
Inventor
Masayuki Minowa
政幸 箕輪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP26098292A priority Critical patent/JPH06112450A/en
Publication of JPH06112450A publication Critical patent/JPH06112450A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to conduct a design for facilitation of a test and a design of a layout suitable for the improvement of reliability by a method wherein field through wirings having no relation to a logic are put at all the positions at each specified pitch of all the cells of logic circuit cells designed in such a way that their heights are formed in a constant height and their widths are formed at a pitch set at a value integer multiples of the smallest pitch. CONSTITUTION:Functional blocks (a P-type diffused layer 4 and an N-type diffused layer 5) arranged with logic circuit cells designed in such a way that their heights are formed in the same height and their widths are formed at a pitch set at a value integer multiples the smallest constant pitch and wiring blocks (a power conductor 6 and a GND conductor 6a) arranged in parallel to these functional blocks are alternately arranged and field through wirings 1, which intersect orthogonally the functional and wiring blocks and are not connected to anything, are penetratingly wired at all the positions at a pitch set at a value specified integer multiples of the smallest pitch of all the cells of the logic circuit cells.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路の機能ブ
ロックレイアウト方法に関し、特に論理回路セルの高さ
が同一で幅が最小ピッチの整数倍で行なうレイアウト設
計方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of laying out functional blocks of a semiconductor integrated circuit, and more particularly to a layout designing method in which logic circuit cells have the same height and width is an integral multiple of a minimum pitch.

【0002】[0002]

【従来の技術】従来、この種の半導体論理回路セルのレ
イアウトは、例えば、CMOSの3入力ANDゲートを
例にとると、図7に示すようになっていた。このIC2
0は、トランジスタ21と配線領域22とが規則的に配
列されたものとする。トランジスタ領域21は、素子分
離ゲート3の間にP形拡散層4,N形拡散層5を設け、
これら拡散層4,5と平行に電源線6,接地(GND)
線6aが設けられ、これらに直交してゲートの入力線
2,出力線7が設けられている。この場合、ANDゲー
トは高さをある一定の値にし、横方向の幅をある一定の
幅(最小ピッチ)の整数倍として各論理機能毎に最小の
サイズになるようにレイアウトていた。
2. Description of the Related Art Conventionally, the layout of a semiconductor logic circuit cell of this type has been as shown in FIG. 7 for a CMOS 3-input AND gate, for example. This IC2
0 means that the transistors 21 and the wiring regions 22 are regularly arranged. In the transistor region 21, the P-type diffusion layer 4 and the N-type diffusion layer 5 are provided between the element isolation gates 3,
Power line 6 and ground (GND) parallel to these diffusion layers 4 and 5
A line 6a is provided, and an input line 2 and an output line 7 of the gate are provided orthogonal to these. In this case, the AND gate is laid out so that the height is set to a certain value and the width in the horizontal direction is set to an integral multiple of a certain width (minimum pitch) so that each logical function has a minimum size.

【0003】ここで信号配線として2層のアルミ配線を
想定し、電源線6およびセル内配線に第1のアルミ配線
層を割り当て、セルからの出力配線7に第2のアルミ配
線層を割り当てたセルを想定している。これらのセルを
用いた論理回路のレイアウトは、図6に示す通りセルを
横方向に並べそれを、数段積み重ね各段間を配線領域2
2とする手法をとっていた。
Assuming that two-layer aluminum wiring is used as the signal wiring, the first aluminum wiring layer is assigned to the power supply line 6 and the in-cell wiring, and the second aluminum wiring layer is assigned to the output wiring 7 from the cell. I am assuming a cell. The layout of the logic circuit using these cells is such that the cells are arranged in the horizontal direction as shown in FIG.
2 was used.

【0004】一方、配線領域以外を予め作っておき、配
線のつなぎ替えのみで異なる論理回路を実現する方式の
ゲートアレーにおいては、例えばCMOSの場合、図8
のように2つのトランジスタ・ペアを1つの基本セルと
し、これを横方向に敷き詰め、配線領域22を設けて数
段並べる構成をとっていた。
On the other hand, in the case of a gate array of a system in which a region other than the wiring region is formed in advance and a different logic circuit is realized only by rewiring, for example, in the case of CMOS, FIG.
As described above, two transistor pairs are used as one basic cell, which are laid out in the lateral direction, and the wiring region 22 is provided to arrange them in several stages.

【0005】[0005]

【発明が解決しようとする課題】上述した従来の論理回
路用のセル設計において、ゲートアレーで3入力NAN
Dゲートを実現する場合、図8に示すように2つの基本
セルを用いるため未使用ゲート13のようなトランジス
タ領域ができるため、レイアウトの利用効率が下がる欠
点がある。
In the above-described conventional cell design for a logic circuit, a gate array has a 3-input NAN.
In the case of realizing the D gate, since two basic cells are used as shown in FIG. 8, a transistor region such as an unused gate 13 is formed, so that there is a drawback that the utilization efficiency of the layout is lowered.

【0006】一方、レイアウト面積を小さくするため、
図7に示するセルを用いたレイアウトを行なった場合、
上辺から下辺に数本の配線(ポリシリまたは第2のアル
ミ配線)を垂直に通す必要が生じても通すことが難しい
という欠点があった。
On the other hand, in order to reduce the layout area,
When the layout using the cells shown in FIG. 7 is performed,
Even if it is necessary to vertically pass some wirings (polysilicon or second aluminum wiring) from the upper side to the lower side, it is difficult to pass the wirings.

【0007】本発明の目的は、これら欠点を除き、レイ
アウト効率を改善し、信頼性の高い半導体集積回路のブ
ロックレイアウト方法を提供することにある。
An object of the present invention is to eliminate these drawbacks, improve layout efficiency, and provide a highly reliable block layout method for a semiconductor integrated circuit.

【0008】[0008]

【課題を解決するための手段】本発明の半導体集積回路
のブロックレイアウト方法の構成は、高さを同一にし、
横幅を一定の最小ピッチ幅の整数倍のピッチとなるよう
にした論理回路セルを配列した機能ブロックとこの機能
ブロックとを並列に配列した配線ブロックと交互に配置
した半導体集積回路のブロックレイアウト方法におい
て、前記論理回路セルの全てのセルで前記最小ピッチ幅
の特定の整数倍の全ての位置に、前記機能ブロックおよ
び前記配線ブロックと直交して、何れにも接続されない
フィードスルー配線を貫通して配線したことを特徴とす
る。
The structure of a block layout method for a semiconductor integrated circuit according to the present invention has the same height.
In a block layout method of a semiconductor integrated circuit in which a functional block in which logic circuit cells whose width is set to an integer multiple of a fixed minimum pitch width are arranged and a wiring block in which the functional blocks are arranged in parallel are alternately arranged Wiring is performed in all cells of the logic circuit cell at all positions that are a specific integer multiple of the minimum pitch width, orthogonal to the functional block and the wiring block, and penetrating feed-through wiring that is not connected to any of them. It is characterized by having done.

【0009】[0009]

【実施例】図1(a),(b)は本発明の第1の実施例
を説明するレイアウト図で、3入力NANDゲートのレ
イアウト例を示し、図2(a),(b)は図1(a),
(b)の模式図である。ここでは最小ピッチの4倍の位
置にゲートポリシリコンのフィードスルー配線(以下F
T配線という)1を配置している。また、セルの左辺ま
たは右辺はFT配線1または素子分離用のトランジスタ
のみを配置することとする。例えば、図3のように左隣
りのセルが配置された場合、そのセルのFT配線から4
ピッチ目にフィードスルー配線がくるように選択した3
入力NANDゲートを配置する(この場合は図2
(a),(b)のセル)。
1A and 1B are layout diagrams for explaining a first embodiment of the present invention, showing a layout example of a 3-input NAND gate, and FIGS. 2A and 2B are diagrams. 1 (a),
It is a schematic diagram of (b). Here, the feed-through wiring of the gate polysilicon (hereinafter referred to as F
1) is arranged. Further, only the FT wiring 1 or the transistor for element isolation is arranged on the left side or the right side of the cell. For example, when the cell on the left is arranged as shown in FIG.
3 selected so that feedthrough wiring comes to the pitch
Arrange the input NAND gate (in this case, FIG.
(Cells of (a) and (b)).

【0010】ここで、例えば配線領域に、図4のように
トランジスタを形成し、一方の拡散層と論理セルの出力
を接続し他方の拡散層と横方向のアルミ配線を接続す
る。これにより米国特許4749947号に示すよう
に、任意のプローブラインを選定しセンスラインの出力
を見ることにより、任意の出力端子の故障を検出するこ
とができる。
Here, for example, a transistor is formed in the wiring region as shown in FIG. 4, one diffusion layer is connected to the output of the logic cell, and the other diffusion layer is connected to the lateral aluminum wiring. As a result, as shown in US Pat. No. 4,749,471, a failure of an arbitrary output terminal can be detected by selecting an arbitrary probe line and observing the output of the sense line.

【0011】図5(a),(b)は本発明の第2の実施
例のレイアウト図であり、FT配線として第2層目のア
ルミの配線を想定したセルの例を示す。これにより図6
に示すように、1ピッチ毎にセルの電源線またはGND
と接続することにより、電源線を網目状に配置すること
ができ、信頼性の高い論理回路のレイアウトをすること
ができる。
FIGS. 5A and 5B are layout diagrams of the second embodiment of the present invention, showing an example of a cell in which the second layer aluminum wiring is assumed as the FT wiring. As a result,
As shown in, the power line of the cell or GND
By connecting with, the power supply lines can be arranged in a mesh and a highly reliable logic circuit layout can be performed.

【0012】[0012]

【発明の効果】以上説明したように本発明は、高さが一
定で横幅が最小ピッチの整数倍で設計されたセルにおい
て、ある特定のピッチ毎に論理に無関係なFT配線を置
くことにより、テスト容易化の設計や、信頼性向上に向
いたレイアウト設計を行なうことができるという効果が
ある。
As described above, according to the present invention, in a cell designed to have a constant height and a lateral width that is an integral multiple of the minimum pitch, by placing FT wiring unrelated to logic at a specific pitch, There is an effect that a design for testability and a layout design for improving reliability can be performed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の論理回路セルの模式的
平面図。
FIG. 1 is a schematic plan view of a logic circuit cell according to a first embodiment of the present invention.

【図2】図1を説明する模式図。FIG. 2 is a schematic diagram illustrating FIG.

【図3】図1の隣接セルとの接続法を示した模式図。FIG. 3 is a schematic diagram showing a connection method with adjacent cells in FIG.

【図4】図1の応用例の一部拡大した平面図。FIG. 4 is a partially enlarged plan view of the application example of FIG.

【図5】本発明の第2の実施例の論理回路セルの平面
図。
FIG. 5 is a plan view of a logic circuit cell according to a second embodiment of the present invention.

【図6】図5の応用例の一部拡大した平面図。FIG. 6 is a partially enlarged plan view of the application example of FIG.

【図7】従来の論理回路セルの一例の一部拡大した平面
図。
FIG. 7 is a partially enlarged plan view of an example of a conventional logic circuit cell.

【図8】従来のゲートアレイの論理回路セルの一例の平
面図。
FIG. 8 is a plan view of an example of a logic circuit cell of a conventional gate array.

【符号の説明】 1 ゲートのFT配線 2 ゲートの入力線 3 素子分離ゲート 4 P形拡散層 5 N形拡散層 6 電源線 6a GND線 7 出力線 8 センス線 9 論理回路セルの出力線 10 第二アルミのFT配線 11 GND線 12 電源線 13 未使用ゲート線 20 IC 21 トランジスタ領域 22 配線領域[Explanation of Codes] 1 FT wiring 2 Gate input line 3 Element isolation gate 4 P-type diffusion layer 5 N-type diffusion layer 6 Power supply line 6a GND line 7 Output line 8 Sense line 9 Logic circuit cell output line 10th 2 Aluminum FT wiring 11 GND line 12 Power supply line 13 Unused gate line 20 IC 21 Transistor area 22 Wiring area

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 高さを同一にし、横幅を一定の最小ピッ
チ幅の整数倍のピッチとなるようにした論理回路セルを
配列した機能ブロックとこの機能ブロックと並列に配列
した配線ブロックとを交互に配置した半導体集積回路の
ブロックレイアウト方法において、前記論理回路セルの
全てのセルで前記最小ピッチ幅の特定の整数倍の全ての
位置に、前記機能ブロックおよび前記配線ブロックと直
交して、何れにも接続されないフィードスルー配線を貫
通して配線したことを特徴とする半導体集積回路のブロ
ックレイアウト方法。
1. A functional block in which logic circuit cells having the same height and a horizontal width that is an integral multiple of a fixed minimum pitch width are arranged, and a wiring block arranged in parallel with the functional block are alternately arranged. In the block layout method of the semiconductor integrated circuit arranged in the above, in all cells of the logic circuit cell in all positions of a specific integer multiple of the minimum pitch width, orthogonal to the functional block and the wiring block, which A block layout method for a semiconductor integrated circuit, which is characterized in that wiring is performed through a feed-through wiring that is not connected to the semiconductor integrated circuit.
JP26098292A 1992-09-30 1992-09-30 Layout of block of semiconductor integrated circuit Pending JPH06112450A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26098292A JPH06112450A (en) 1992-09-30 1992-09-30 Layout of block of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26098292A JPH06112450A (en) 1992-09-30 1992-09-30 Layout of block of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH06112450A true JPH06112450A (en) 1994-04-22

Family

ID=17355439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26098292A Pending JPH06112450A (en) 1992-09-30 1992-09-30 Layout of block of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH06112450A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426650B1 (en) 1999-12-28 2002-07-30 Koninklijke Philips Electronics, N.V. Integrated circuit with metal programmable logic having enhanced reliability
US6525350B1 (en) 1999-07-16 2003-02-25 Kawasaki Steel Corporation Semiconductor integrated circuit basic cell semiconductor integrated circuit using the same
CN107039423A (en) * 2017-04-19 2017-08-11 记忆科技(深圳)有限公司 A kind of power line cloth version method on power control unit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6525350B1 (en) 1999-07-16 2003-02-25 Kawasaki Steel Corporation Semiconductor integrated circuit basic cell semiconductor integrated circuit using the same
US6426650B1 (en) 1999-12-28 2002-07-30 Koninklijke Philips Electronics, N.V. Integrated circuit with metal programmable logic having enhanced reliability
CN107039423A (en) * 2017-04-19 2017-08-11 记忆科技(深圳)有限公司 A kind of power line cloth version method on power control unit

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