JPH06112416A - 集積回路 - Google Patents

集積回路

Info

Publication number
JPH06112416A
JPH06112416A JP3306372A JP30637291A JPH06112416A JP H06112416 A JPH06112416 A JP H06112416A JP 3306372 A JP3306372 A JP 3306372A JP 30637291 A JP30637291 A JP 30637291A JP H06112416 A JPH06112416 A JP H06112416A
Authority
JP
Japan
Prior art keywords
region
tank
gate
transistor
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3306372A
Other languages
English (en)
Japanese (ja)
Inventor
Michael C Smayling
シー．スメイリング マイクル
James R Todd
アール．トッド ジェームス
Louis Hutter
ハッター ルイス
Georges Falessi
ファレッシイ ジョージズ
Manuel Torreno
トレノ マヌエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH06112416A publication Critical patent/JPH06112416A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP3306372A 1990-11-21 1991-11-21 集積回路 Pending JPH06112416A (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US61785090A 1990-11-21 1990-11-21
US61827990A 1990-11-23 1990-11-23
US61835390A 1990-11-23 1990-11-23
US61827390A 1990-11-23 1990-11-23
US618279 1990-11-23
US617850 1990-11-23
US618273 1990-11-23
US618353 1990-11-23

Publications (1)

Publication Number Publication Date
JPH06112416A true JPH06112416A (ja) 1994-04-22

Family

ID=27505142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3306372A Pending JPH06112416A (ja) 1990-11-21 1991-11-21 集積回路

Country Status (3)

Country Link
JP (1) JPH06112416A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100212409B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW230823B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487515B1 (ko) * 1998-08-17 2005-07-07 삼성전자주식회사 이이피롬 장치의 제조 방법
JP2015038972A (ja) * 2013-08-19 2015-02-26 力旺電子股▲ふん▼有限公司 高電圧電力制御システム

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI273712B (en) * 2005-12-30 2007-02-11 Au Optronics Corp A method for manufacturing a bottom substrate of a liquid crystal display device with three mask processes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487515B1 (ko) * 1998-08-17 2005-07-07 삼성전자주식회사 이이피롬 장치의 제조 방법
JP2015038972A (ja) * 2013-08-19 2015-02-26 力旺電子股▲ふん▼有限公司 高電圧電力制御システム

Also Published As

Publication number Publication date
TW230823B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-09-21
KR920010881A (ko) 1992-06-27
KR100212409B1 (ko) 1999-08-02

Similar Documents

Publication Publication Date Title
US5275961A (en) Method of forming insulated gate field-effect transistors
US5296393A (en) Process for the simultaneous fabrication of high-and-low-voltage semiconductor devices, integrated circuit containing the same, systems and methods
US5355007A (en) Devices for non-volatile memory, systems and methods
US5272098A (en) Vertical and lateral insulated-gate, field-effect transistors, systems and methods
US5204541A (en) Gated thyristor and process for its simultaneous fabrication with high- and low-voltage semiconductor devices
US5225700A (en) Circuit and method for forming a non-volatile memory cell
US5550072A (en) Method of fabrication of integrated circuit chip containing EEPROM and capacitor
US4804637A (en) EEPROM memory cell and driving circuitry
US6351017B1 (en) High voltage transistor with modified field implant mask
US5969382A (en) EPROM in high density CMOS having added substrate diffusion
US6351008B1 (en) Method for manufacturing electronic devices having non-volatile memory cells and LV transistors with salicided junctions
JPH1117035A (ja) 不揮発性半導体記憶装置およびその製造方法
US6251728B1 (en) Method for manufacturing electronic devices having HV transistors and LV transistors with salicided junctions
US20030098509A1 (en) Semiconductor device, semiconductor element and method for producing same
US6396101B2 (en) Method for manufacturing electronic devices comprising non-volatile memory cells and LV transistors with salicided junctions
US5429959A (en) Process for simultaneously fabricating a bipolar transistor and a field-effect transistor
JP2804314B2 (ja) フローティングゲートメモリアレイ
KR20000062558A (ko) 집적 회로 칩 및 그 형성 방법
JPH06112416A (ja) 集積回路
US20020000605A1 (en) Method of fabricating high-coupling ratio split gate flash memory cell array
JPH03194967A (ja) 半導体不揮発性メモリの製造方法
JP2000195972A (ja) 不揮発性半導体記憶装置およびその製造方法
JPS63237463A (ja) スタテイツク型半導体記憶装置およびその製造方法