JPH06110198A - Method for lowering reflectivity of substrate surface - Google Patents
Method for lowering reflectivity of substrate surfaceInfo
- Publication number
- JPH06110198A JPH06110198A JP25811692A JP25811692A JPH06110198A JP H06110198 A JPH06110198 A JP H06110198A JP 25811692 A JP25811692 A JP 25811692A JP 25811692 A JP25811692 A JP 25811692A JP H06110198 A JPH06110198 A JP H06110198A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- titanium nitride
- nitride film
- reflectance
- reflectivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体基板の製造技術
に関し、特、にフォトリソグラフィにおける露光の際の
基板反射率を低減させる基板表面の反射率低減方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate manufacturing technique, and more particularly to a method of reducing the reflectance of a substrate surface for reducing the reflectance of the substrate during exposure in photolithography.
【０００２】[0002]
【従来の技術】最近、ＩＣの高集積化に伴い、フォトリ
ソグラフィにおける高精度微細金属配線の形成技術が必
須となってきている。この技術は例えば半導体等の基板
上に金属膜を形成し、この金属膜上にフォトレジストを
回転塗布した後、光パターンに露光され現像される。そ
して、このフォトレジストの開口部分にあたる金属をエ
ッチングして残った残留フォトレジストを除去し、金属
配線パターンを得る技術である。2. Description of the Related Art Recently, with the high integration of ICs, a technique for forming highly accurate fine metal wiring in photolithography has become indispensable. In this technique, for example, a metal film is formed on a substrate such as a semiconductor, a photoresist is spin-coated on the metal film, and then exposed to a light pattern and developed. Then, the metal corresponding to the opening portion of the photoresist is etched to remove the remaining photoresist, thereby obtaining a metal wiring pattern.
【０００３】しかし、例えば半導体等の基板上にスパッ
タで形成され、高反射率を有する金属膜表面では定在波
効果やハレーション効果が著しいため、フォトレジスト
パターンの配線ピッチを上げること（フォトレジストパ
ターン形成）が困難になってきた。However, since the standing wave effect and the halation effect are remarkable on the surface of a metal film formed by sputtering on a substrate such as a semiconductor and having a high reflectance, the wiring pitch of the photoresist pattern should be increased (photoresist pattern Formation) has become difficult.
【０００４】そこで、このフォトレジストパターンの配
線ピッチを上げるため、基板上に形成された金属膜表面
の反射率を低減させる方法が報告されている。例えば、
昭和６２年度応用物理学会講演会（２９ａ−Ｂ−２，
３）には、金属膜上に窒化チタン膜をスパッタして形成
することが有効である旨示されており、また、特開昭６
３−３１６０５３号公報にはこの窒化チタン膜の膜厚を
限定することにより、該窒化チタン膜を被着させること
による反射率低減効果を最大にできることが示されてい
る。Therefore, there has been reported a method of reducing the reflectance of the surface of the metal film formed on the substrate in order to increase the wiring pitch of the photoresist pattern. For example,
1987 Japan Society of Applied Physics (29a-B-2,
3) shows that it is effective to form a titanium nitride film on a metal film by sputtering, and see Japanese Patent Laid-Open No.
Japanese Unexamined Patent Publication No. 3-316053 discloses that by limiting the film thickness of the titanium nitride film, the effect of reducing the reflectance by depositing the titanium nitride film can be maximized.
【０００５】[0005]
【発明が解決しようとする課題】従来、基板上に形成さ
れた金属膜表面の光反射を低減させてフォトレジストパ
ターンの配線ピッチを向上させる方法として、この金属
膜上に窒化チタン膜を被着させていた。しかし、例えば
特開昭６３−３１６０５３号公報によると、水銀スペク
トルのうちｇ線ステッパーの露光波長（４３６ｎｍ）
で、基板反射率を最も低くするように窒化チタン膜の膜
厚を３００Åにする場合、図２に示すように（図中に示
した基板反射率は、ｂａｒｅ Ｓｉの反射率を１００％
として示している）、窒化チタン膜についてこの膜厚の
基板面内均一性を±１０Å程度に制御しなければ、この
表面反射率のバラツキによりフォトリソグラフィにおけ
るパターン寸法もバラツイてしまうという課題があっ
た。Conventionally, as a method of reducing the light reflection on the surface of a metal film formed on a substrate and improving the wiring pitch of a photoresist pattern, a titanium nitride film is deposited on the metal film. I was letting it. However, for example, according to JP-A-63-316053, the exposure wavelength (436 nm) of a g-line stepper in the mercury spectrum.
Then, when the film thickness of the titanium nitride film is set to 300 Å so that the substrate reflectance is the lowest, as shown in FIG. 2 (the substrate reflectance shown in the figure is 100% that of bare Si.
However, if the in-plane uniformity of this film thickness of the titanium nitride film is not controlled to about ± 10Å, there is a problem that the pattern dimension in photolithography also varies due to the variation in the surface reflectance. .
【０００６】この発明は基板上に窒化チタン膜を被着さ
せることによる基板表面の反射率の低減効果を容易に向
上させることを目的とする。An object of the present invention is to easily improve the effect of reducing the reflectance of the substrate surface by depositing a titanium nitride film on the substrate.
【０００７】[0007]
【課題を解決するための手段】この発明に係る基板表面
の反射率低減方法は、反射率を低減させるべく被着させ
た窒化チタン膜に対し、レジスト灰化処理に使われるア
ッシャー等の装置を用いて酸素プラズマ処理を直接行う
ようにしたことを特徴としている。A method for reducing the reflectance of a substrate surface according to the present invention uses a device such as an asher used for a resist ashing process for a titanium nitride film deposited to reduce the reflectance. The feature is that the oxygen plasma treatment is directly performed by using the oxygen plasma treatment.
【０００８】また、この酸素プラズマ処理は基板上に被
着された窒化チタン膜表面の反射率低下が一定範囲に収
束するまで行われる。Further, this oxygen plasma treatment is carried out until the decrease in the reflectance of the surface of the titanium nitride film deposited on the substrate converges within a certain range.
【０００９】[0009]
【作用】この発明における基板表面の反射率低減方法
は、基板上に被着させた窒化チタン膜に対して酸素プラ
ズマ処理を行うことにより、この窒化チタン膜の表面を
酸化させ、干渉効果の増加によりさらに表面反射率を低
減させる。In the method of reducing the reflectance of the substrate surface according to the present invention, the titanium nitride film deposited on the substrate is subjected to oxygen plasma treatment to oxidize the surface of the titanium nitride film and increase the interference effect. Further reduces the surface reflectance.
【００１０】これは、基板上に被着させた窒化チタン膜
（ＴｉＮ）の表層にＴｉＯX Ｎy が形成されたことによ
ると考えられ、特に、このＴｉＯX Ｎy が有効な反射防
止膜となることが、例えば昭和６３年応用物理学会予稿
集（２８ｐ−Ｄ−５）に報告されている（特に、膜厚を
３００Åに制御した場合の結果について報告）。It is considered that this is because TiO X N y was formed on the surface layer of the titanium nitride film (TiN) deposited on the substrate. In particular, this TiO X N y was an effective antireflection film. It has been reported, for example, in 1988 Proceedings of the Japan Society of Applied Physics (28p-D-5) (particularly the result when the film thickness is controlled to 300Å).
【００１１】ただし、このＴｉＯX Ｎy の形成方法とし
ては、従来からＯ2 ガス雰囲気中でスパッタリングする
ことにより形成していた。これは従来のフォトリソグラ
フィにおいては行われなかった酸化処理を新たに実施し
なければならないことであり、この発明のように、フォ
トレジストのエッチングのための酸素プラズマ処理をそ
のまま酸化処理として利用することによりこのＴｉＯX
Ｎy が形成されることは今まで知られていなかった。However, as a method of forming this TiO X N y , it has been conventionally formed by sputtering in an O 2 gas atmosphere. This means that an oxidation treatment, which has not been performed in conventional photolithography, must be newly performed. Therefore, as in the present invention, the oxygen plasma treatment for etching the photoresist can be directly used as the oxidation treatment. By this TiO X
It was not previously known that N y was formed.
【００１２】[0012]
【実施例】以下、この発明の一実施例を図について説明
するが、この発明では、例えば半導体等の基板上に被着
された窒化チタン膜の表面をレジスト灰化処理に使われ
ているアッシャー等の酸素プラズマ処理を施すことによ
り行う。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. In the present invention, the surface of a titanium nitride film deposited on a substrate such as a semiconductor is used as a resist ashing treatment for the asher. Etc. by performing oxygen plasma treatment.
【００１３】この実施例において、評価基板として使用
する試料は、半導体基板（ｂａｒｅＳｉ）上に金属膜と
して膜厚８０００ÅのＡｌ−１％Ｃｕ膜をスパッタで形
成した上に、同じく膜厚１０００Åの窒化チタン膜をス
パッタで形成したものを採用する。In this example, the sample used as the evaluation substrate was an Al-1% Cu film having a film thickness of 8000Å formed as a metal film on a semiconductor substrate (bareSi) by sputtering, and a nitride film having a film thickness of 1000Å. A titanium film formed by sputtering is used.
【００１４】これは、図２からも分かるように、窒化チ
タン膜が膜厚増大に伴って基板反射率が一定範囲に収束
するため、この窒化チタン膜の膜厚が５００Å以上にな
るように設定したものである。As can be seen from FIG. 2, this is set so that the film thickness of the titanium nitride film becomes 500 Å or more because the substrate reflectance converges within a certain range as the film thickness increases. It was done.
【００１５】次に、この評価基板をレジスト灰化処理に
使われるアッシャーの処理室に収め、以下の条件に従っ
て酸素プラズマ処理を施す。Next, this evaluation substrate is placed in a processing chamber of an asher used for resist ashing treatment, and oxygen plasma treatment is performed under the following conditions.
【００１６】 基板温度 ： １５０（℃） 室内圧力 ： ０．８（ｍＴｏｒｒ） 酸素キャリア ： ２５０（ｓｃｃｍ） マイクロ波パワー： １０００（Ｗ） 以上の条件で酸素プラズマ処理を施した結果を図１に示
す（図中に示した基板反射率は、ｂａｒｅ Ｓｉの反射
率を１００％として示している）。Substrate temperature: 150 (° C.) Room pressure: 0.8 (mTorr) Oxygen carrier: 250 (sccm) Microwave power: 1000 (W) The results of oxygen plasma treatment under the above conditions are shown in FIG. (The substrate reflectance shown in the figure is based on the reflectance of bare Si being 100%).
【００１７】従来、この評価基板の基板反射率は２１．
６％もあり、３００Åで最大効果を得る前述の特開昭６
３−３１６０５３号公報に示された１３．２％（課題の
欄でも述べたが、基板面内均一性を維持する制御が必
要）と比較すると８．４％も高いのに対し、この実験結
果によると反射率を２１．６％から１６．６％にまで低
減させられることが確認できた。さらに、以上の条件で
酸素プラズマ処理を４０秒以上施すことにより、反射率
が一定値に収束することも確認できた。Conventionally, the substrate reflectance of this evaluation substrate is 21.
It is 6% and the maximum effect is obtained at 300Å.
This is 8.4% higher than the 13.2% disclosed in Japanese Patent Laid-Open No. 3-316053 (as mentioned in the section on the subject, but control to maintain the in-plane uniformity of the substrate is required), while this experimental result is high. According to the above, it was confirmed that the reflectance can be reduced from 21.6% to 16.6%. Further, it was confirmed that the reflectance converges to a constant value by performing the oxygen plasma treatment for 40 seconds or more under the above conditions.
【００１８】[0018]
【発明の効果】以上のようにこの発明によれば、反射率
を低減させるべく被着させた窒化チタン膜表面に対し、
レジスト灰化処理に使われるアッシャー等の装置を用い
て酸素プラズマ処理を行うようにし、さらに、この酸素
プラズマ処理を基板上に被着された窒化チタン膜表面の
反射率の低下が一定範囲に収束するまで行うようにした
ので、この窒化チタン膜表面を酸化させ、基板ごとのバ
ラツきをなくすと共に、従来よりも容易に基板表面の反
射率を低減できる効果がある。As described above, according to the present invention, the surface of the titanium nitride film deposited to reduce the reflectance is
Oxygen plasma treatment is performed using an apparatus such as an asher used for resist ashing treatment. Furthermore, the oxygen plasma treatment is performed within a certain range in which the reflectance of the titanium nitride film surface deposited on the substrate is reduced. Since the titanium nitride film surface is oxidized to eliminate the variation between the substrates, the reflectance of the substrate surface can be reduced more easily than before.
【図１】この発明に係る基板表面の反射率低減方法を実
施した実験結果による基板反射率と酸素プラズマ処理時
間との関係を示す図である。FIG. 1 is a diagram showing a relationship between a substrate reflectance and an oxygen plasma treatment time, which is an experimental result of carrying out a substrate surface reflectance reducing method according to the present invention.
【図２】従来の基板表面の反射率低減方法を実施した実
験結果による基板反射率と窒化チタン膜厚との関係を示
す図である。FIG. 2 is a diagram showing a relationship between a substrate reflectance and a titanium nitride film thickness, which is an experimental result of a conventional substrate surface reflectance reducing method.
Claims (2)
表面の反射率低減方法において、 前記基板上に被着している窒化チタン膜に対して酸素プ
ラズマ処理を行うことを特徴とする基板表面の反射率低
減方法。1. A method for reducing the reflectance of a substrate surface, comprising depositing a titanium nitride film on a substrate, wherein the titanium nitride film deposited on the substrate is subjected to oxygen plasma treatment. Surface reflectance reduction method.
対し、該窒化チタン膜表面の反射率の低下が一定範囲に
収束するまで前記酸素プラズマ処理を施すことを特徴と
する請求項１記載の基板表面の反射率低減方法。2. The oxygen plasma treatment is performed on the titanium nitride film deposited on the substrate until the decrease in reflectance on the surface of the titanium nitride film converges within a certain range. A method for reducing the reflectance of a substrate surface as described above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25811692A JPH06110198A (en) | 1992-09-28 | 1992-09-28 | Method for lowering reflectivity of substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25811692A JPH06110198A (en) | 1992-09-28 | 1992-09-28 | Method for lowering reflectivity of substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06110198A true JPH06110198A (en) | 1994-04-22 |
Family
ID=17315730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25811692A Pending JPH06110198A (en) | 1992-09-28 | 1992-09-28 | Method for lowering reflectivity of substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06110198A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855853A (en) * | 1994-08-15 | 1996-02-27 | Yamaha Corp | Formation method of conductive layer |
| US5877031A (en) * | 1994-07-07 | 1999-03-02 | Hyundai Electronics Industries Co, Ltd | Method for forming a metallic barrier layer in semiconductor device |
| US6211078B1 (en) * | 1997-08-18 | 2001-04-03 | Micron Technology, Inc. | Method of improving resist adhesion for use in patterning conductive layers |
-
1992
- 1992-09-28 JP JP25811692A patent/JPH06110198A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5877031A (en) * | 1994-07-07 | 1999-03-02 | Hyundai Electronics Industries Co, Ltd | Method for forming a metallic barrier layer in semiconductor device |
| JPH0855853A (en) * | 1994-08-15 | 1996-02-27 | Yamaha Corp | Formation method of conductive layer |
| US6211078B1 (en) * | 1997-08-18 | 2001-04-03 | Micron Technology, Inc. | Method of improving resist adhesion for use in patterning conductive layers |
| US6429525B2 (en) | 1997-08-18 | 2002-08-06 | Micron Technology, Inc. | Interconnect structure having improved resist adhesion |
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