JPH0610348B2 - Ion implanter - Google Patents
Ion implanterInfo
- Publication number
- JPH0610348B2 JPH0610348B2 JP61178435A JP17843586A JPH0610348B2 JP H0610348 B2 JPH0610348 B2 JP H0610348B2 JP 61178435 A JP61178435 A JP 61178435A JP 17843586 A JP17843586 A JP 17843586A JP H0610348 B2 JPH0610348 B2 JP H0610348B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- semiconductor substrate
- ion beam
- vacuum
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000010884 ion-beam technique Methods 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 compound ions Chemical class 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、例えば、半導体電子回路製造に用いられる
イオン注入機などのイオン注入装置に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to an ion implanter such as an ion implanter used for manufacturing a semiconductor electronic circuit, for example.
第２図は例えば従来のイオン注入装置の半導体基板近傍
を示す概略図であり、図において、２は真空ポンプ４に
より内部の雰囲気が減圧された真空槽、１は該真空槽２
内に配置された半導体基板、３は上記真空槽２外部のイ
オンビーム発生部で生成されたイオンビームで、上記真
空槽２内の半導体基板１状に導入されるようになってい
る。次に動作について説明する。真空槽２はイオンビー
ム３の散乱が無視出来る程度の真空度まで、真空ポンプ
４により排気される。次いで半導体基板１が載置され、
そこへ上記イオンビーム発生部で生成されたイオンビー
ム３が入射される。FIG. 2 is a schematic view showing, for example, the vicinity of a semiconductor substrate of a conventional ion implantation apparatus. In FIG. 2, 2 is a vacuum chamber whose internal atmosphere is decompressed by a vacuum pump 4, and 1 is the vacuum chamber 2.
A semiconductor substrate 3 disposed inside is an ion beam generated by an ion beam generator outside the vacuum chamber 2, and is introduced into the semiconductor substrate 1 inside the vacuum chamber 2. Next, the operation will be described. The vacuum chamber 2 is evacuated by the vacuum pump 4 to a degree of vacuum at which the scattering of the ion beam 3 can be ignored. Next, the semiconductor substrate 1 is placed,
The ion beam 3 generated by the above-mentioned ion beam generator is incident thereon.
従来のイオン注入装置は以上のように構成されているの
で、半導体基板表面の例えばフォトレジストなどの絶縁
物の領域において、入射電荷が蓄積され、高電界を発生
し半導体基板に既に作られている電子回路を破壊するな
どという問題点があった。Since the conventional ion implantation apparatus is configured as described above, incident electric charges are accumulated in a region of an insulator such as a photoresist on the surface of a semiconductor substrate, a high electric field is generated, and it is already formed on the semiconductor substrate. There was a problem that the electronic circuit was destroyed.
この発明は上記のような問題点を解消するためになされ
たもので、入射電荷の蓄積を防止できるイオン注入装置
を得ることを目的とする。The present invention has been made to solve the above problems, and an object thereof is to obtain an ion implanter capable of preventing the accumulation of incident charges.
この発明に係るイオン注入装置は、半導体基板の表面に
いわゆるプラズマを導入し、入射電荷を中性化するよう
にしたものである。The ion implantation apparatus according to the present invention is one in which so-called plasma is introduced into the surface of the semiconductor substrate to neutralize the incident charges.
この発生においては、プラズマにより入射電荷を中性化
することにより、半導体基板の表面電荷の蓄積を防止す
る。In this generation, the plasma is used to neutralize the incident charges, thereby preventing the accumulation of surface charges on the semiconductor substrate.
以下、この発明の一実施例を図について説明する。第１
図において、第２図と同一符号は同一のものを示し、２
１はプラズマ２８を発生させるための真空容器、２２は
真空容器２１内のガスを排気し、減圧状態にするための
真空ポンプ、２３はプラズマ化するガスを真空容器２１
内に導入するためのガス入口、２４は真空容器２１のプ
ラズマ２８の発生領域に静磁場を発生するためのコイ
ル、２５はプラズマ２８を発生させるためのマイクロ波
電力を供給するための発振器、２６はイオンビーム３が
ウェハ１に入射される領域の真空槽２内へプラズマ２８
を導くとともに、真空容器２１内のガスの流入を抑える
ためのガス遅延配管、２７は真空容器２１内のガスを真
空ポンプ２２へ導くための排気配管である。An embodiment of the present invention will be described below with reference to the drawings. First
In the figure, the same reference numerals as those in FIG.
1 is a vacuum container for generating plasma 28, 22 is a vacuum pump for exhausting the gas in the vacuum container 21 to bring it into a depressurized state, and 23 is a vacuum container 21 for the gas to be turned into plasma.
A gas inlet for introduction into the inside, 24 a coil for generating a static magnetic field in the plasma 28 generation region of the vacuum vessel 21, 25 an oscillator for supplying microwave power for generating the plasma 28, 26 The plasma 28 into the vacuum chamber 2 in the region where the ion beam 3 is incident on the wafer 1.
Is a gas delay pipe for suppressing the inflow of gas in the vacuum container 21, and 27 is an exhaust pipe for guiding the gas in the vacuum container 21 to the vacuum pump 22.
次にこの実施例におけるイオン注入装置の動作について
説明する。まず真空槽２及び真空容器２１が真空ポンプ
４及び２２により真空に排気される。次にガス入口２３
よりプラズマを発生させるガスがプラズマ発生に必要な
ガス圧で導入される。次に、磁場コイル２４に電流を流
し、プラズマ生成領域に電子サイクロトロン共鳴に必要
な磁場を発生させる。この磁場は、それによってイオン
ビーム３の軌道に影響しない磁場分布であることが好ま
しい。次に発振器２５によりマイクロ波を発生させ、導
波管回路によりマイクロ波をガスの導入されている真空
容器２１へ導く。このマイクロ波の電力により、プラズ
マ２８が発生する。なお、このプラズマ２８に含まれる
物質は、イオンビーム３中のイオンと同一物質であって
もよい。発生したプラズマ２８は、磁場に沿って、ガス
遅延配管２６内を拡散し、エンドステーション真空槽２
に導入され、シリコンウェハ１表面を覆い接触する。続
いて従来のイオン注入装置と同様に、イオンビーム発生
部で生成されたイオンビーム３が真空槽２に導入され、
例えばシリコン酸化膜のパターンの形成されたシリコン
ウェハ１の表面に入射される。Next, the operation of the ion implantation apparatus in this embodiment will be described. First, the vacuum tank 2 and the vacuum container 21 are evacuated to a vacuum by the vacuum pumps 4 and 22. Next, the gas inlet 23
Gas for generating more plasma is introduced at the gas pressure required for plasma generation. Next, an electric current is passed through the magnetic field coil 24 to generate a magnetic field necessary for electron cyclotron resonance in the plasma generation region. This magnetic field is preferably a magnetic field distribution that does not thereby affect the trajectory of the ion beam 3. Next, the oscillator 25 generates microwaves, and the waveguide circuit guides the microwaves to the vacuum container 21 into which gas is introduced. Plasma 28 is generated by the electric power of the microwave. The substance contained in the plasma 28 may be the same substance as the ions in the ion beam 3. The generated plasma 28 diffuses in the gas delay pipe 26 along the magnetic field, and the end station vacuum chamber 2
Is introduced into and contacts the surface of the silicon wafer 1. Then, like the conventional ion implanter, the ion beam 3 generated by the ion beam generator is introduced into the vacuum chamber 2,
For example, the light is incident on the surface of the silicon wafer 1 on which the pattern of the silicon oxide film is formed.
このとき、シリコン酸化膜は絶縁別であるので、イオン
の入射により表面槽に入射電荷が蓄積される。ウェハの
表面近傍にプラズマが存在しない時には、この電荷によ
る電界はシリコン基板側に集中し、その強度が大きくな
ると、絶縁膜を破壊することもある。これに対し、本実
施例のようにシリコン基板表面近傍にプラズマが存在す
る場合、プラズマ中より表面に入射した電荷を中和する
のに必要な数の電子もしくはイオンが基板表面に集り、
同時にプラズマが接する、イオンビームを発生する部分
と電気的に導通のある基板以外の壁面に、基板表面に集
ったと同数の電子もしくはイオンが入射することによ
り、基板の電気的中性と同時に、プラズマの中性も保た
れる。このため、基板表面の絶縁膜の破壊などの電荷蓄
積による不都合を防ぐことができる。At this time, since the silicon oxide film has different insulation, incident charges are accumulated in the surface tank due to the incidence of ions. When plasma does not exist near the surface of the wafer, the electric field due to this electric charge concentrates on the silicon substrate side, and when the strength increases, the insulating film may be destroyed. On the other hand, when plasma is present near the surface of the silicon substrate as in this embodiment, the number of electrons or ions necessary to neutralize the charges incident on the surface from the plasma are collected on the surface of the substrate,
Simultaneously with the electrical neutrality of the substrate, the same number of electrons or ions as those collected on the substrate surface are incident on the wall surface other than the substrate that is in electrical contact with the part that generates the ion beam and is in contact with the plasma at the same time. Plasma neutrality is also maintained. Therefore, it is possible to prevent inconvenience due to charge accumulation such as destruction of the insulating film on the substrate surface.
なお上記実施例において、シリコン半導体回路製造に用
いられるシリコン酸化膜を表面とするシリコン基板へ入
射するイオンとしては、ドーパントとして用いられる化
学周期律表におけるIII族，Ｖ族の元素の原子イオン，
それらの元素を含むＢＦ２ ＋などの化合物イオンがあ
る。また、シリコン基板の表面もしくは内部に酸化膜を
形成するための酸素イオン、窒化膜を形成する窒化イオ
ン及びそれらを含む化合物のイオンでもよい。また、結
晶シリコンを乱雑化するためのシリコンイオンであって
もよい。さらに、Ａｒ，Ｘｅ，Ｈｅ，Ｋｒ，Ｎｅの希ガ
スイオンや、周期律表Ｉ族、IVの元素のイオンおよびそ
れらを含む化合物のイオンもあげられる。In the above-described embodiment, the ions incident on the silicon substrate having the silicon oxide film as the surface used in the manufacture of silicon semiconductor circuits are atomic ions of group III and group V elements in the chemical periodic table used as dopants,
There are compound ions such as BF 2 + containing those elements. Alternatively, oxygen ions for forming an oxide film on the surface or inside of the silicon substrate, nitride ions for forming a nitride film, and ions of a compound containing them may be used. Further, it may be silicon ions for disordering the crystalline silicon. Further, rare gas ions such as Ar, Xe, He, Kr, and Ne, ions of elements of groups I and IV of the periodic table, and ions of compounds containing them are also included.
また上記実施例では表面絶縁物がシリコン酸化膜である
場合について示したが、通常よく用いられているシリコ
ン窒化膜、シリコンオキシナイトライド膜，高融点金属
酸化膜，感光性有機高分子膜等のフォトレジストであっ
ても同様の効果が得られる。Further, in the above embodiment, the case where the surface insulator is a silicon oxide film has been shown, but a silicon nitride film, a silicon oxynitride film, a refractory metal oxide film, a photosensitive organic polymer film and the like which are commonly used are used. The same effect can be obtained with a photoresist.
また、上記実施例ではプラズマ発生源として、差動排気
系を備えた、イオン注入領域に比べ圧力の大きいプラズ
マ源を用いたが、入射イオンを散乱させない範囲の圧力
であれば、必ずしも差動排気系を備える必要はない。Further, in the above-mentioned embodiment, a plasma source having a differential evacuation system and a pressure higher than that of the ion implantation region is used as the plasma generation source. It is not necessary to have a system.
また、上記実施例においては、静磁場を用いた電子サイ
クロトロン共鳴法によりプラズマを発生させたが、必ず
しもこの方法である必要はなく、ＲＦ放電，直流放電，
レーザ光による光イオン化放電などの任意の方法でプラ
ズマを発生させてもよいことは言うまでもない。Further, in the above embodiment, the plasma was generated by the electron cyclotron resonance method using the static magnetic field, but it is not always necessary to use this method, and RF discharge, DC discharge,
It goes without saying that plasma may be generated by any method such as photoionization discharge using laser light.
以上のように、この発明によれば、半導体基板の表面に
接触するようにプラズマを導入しイオンビームによる入
射電荷を中性化し、半導体基板表面での電荷蓄積を防止
するようにしたので、電荷蓄積による不都合のないイオ
ン注入装置が得られる効果がある。As described above, according to the present invention, the plasma is introduced so as to come into contact with the surface of the semiconductor substrate to neutralize the incident charges due to the ion beam, and the charge accumulation on the surface of the semiconductor substrate is prevented. There is an effect that an ion implantation apparatus free of inconvenience due to accumulation can be obtained.
【図面の簡単な説明】 第１図はこの発明の一実施例によるイオン注入装置を示
す概略図、第２図は従来のイオン注入装置を示す概略図
である。 図において、１は半導体基板、２は真空槽、３はイオン
ビーム、４は真空ポンプ、２１は真空容器、２２は真空
ポンプ、２３はガス入口、２４は磁場コイル、２５はマ
イク波発振器、２６はガス遅延配管、２７は排気配管、
２８はプラズマである。 なお図中同一符号は同一又は相当部分を示す。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an ion implanter according to an embodiment of the present invention, and FIG. 2 is a schematic view showing a conventional ion implanter. In the figure, 1 is a semiconductor substrate, 2 is a vacuum tank, 3 is an ion beam, 4 is a vacuum pump, 21 is a vacuum container, 22 is a vacuum pump, 23 is a gas inlet, 24 is a magnetic field coil, 25 is a microwave oscillator, 26 Is a gas delay pipe, 27 is an exhaust pipe,
28 is plasma. The same reference numerals in the drawings indicate the same or corresponding parts.
Claims (1)
装置において、 このイオン注入装置が、 イオンビーム発生部と、 上記半導体基板の処理を行うエンドステーション真空槽
と、 該エンドステーション真空槽外部に付設されたプラズマ
発生装置とにより構成されており、 上記プラズマ発生装置内で生成されたプラズマが上記エ
ンドステーション真空槽内に設置された半導体基板表面
に接触するように導入されるとともに、 上記イオンビーム発生部で生成されたイオンビームが上
記半導体基板に注入されることを特徴とするイオン注入
装置。1. An ion implantation apparatus for implanting ions into a semiconductor substrate, the ion implantation apparatus being provided with an ion beam generator, an end station vacuum chamber for processing the semiconductor substrate, and an outside of the end station vacuum chamber. The plasma generated in the plasma generator is introduced so as to come into contact with the surface of the semiconductor substrate installed in the end station vacuum chamber, and the ion beam is generated. An ion implantation apparatus, wherein the ion beam generated in the section is implanted into the semiconductor substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178435A JPH0610348B2 (en) | 1986-07-28 | 1986-07-28 | Ion implanter |
| US07/078,086 US4806829A (en) | 1986-07-28 | 1987-07-27 | Apparatus utilizing charged particles |
| GB8717806A GB2194857B (en) | 1986-07-28 | 1987-07-28 | Apparatus utilizing charged particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178435A JPH0610348B2 (en) | 1986-07-28 | 1986-07-28 | Ion implanter |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7083729A Division JP2683509B2 (en) | 1995-04-10 | 1995-04-10 | Ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6333566A JPS6333566A (en) | 1988-02-13 |
| JPH0610348B2 true JPH0610348B2 (en) | 1994-02-09 |
Family
ID=16048464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61178435A Expired - Lifetime JPH0610348B2 (en) | 1986-07-28 | 1986-07-28 | Ion implanter |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4806829A (en) |
| JP (1) | JPH0610348B2 (en) |
| GB (1) | GB2194857B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4973883A (en) * | 1987-05-01 | 1990-11-27 | Semiconductor Energy Laborator Co., Ltd. | Plasma processing apparatus with a lisitano coil |
| KR910002310A (en) * | 1988-06-29 | 1991-01-31 | 미다 가쓰시게 | Plasma processing equipment |
| JP2618001B2 (en) * | 1988-07-13 | 1997-06-11 | 三菱電機株式会社 | Plasma reactor |
| JPH031335U (en) * | 1989-05-26 | 1991-01-09 | ||
| US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
| EP0469314A3 (en) * | 1990-07-31 | 1992-06-03 | Siemens Aktiengesellschaft | Method for neutralizing electric charges built up on a specimen in a vacuum chamber |
| JP2977098B2 (en) * | 1990-08-31 | 1999-11-10 | 忠弘 大見 | Charged material neutralization device |
| US5111108A (en) * | 1990-12-14 | 1992-05-05 | Gte Products Corporation | Vapor discharge device with electron emissive material |
| IT1246684B (en) * | 1991-03-07 | 1994-11-24 | Proel Tecnologie Spa | CYCLOTRONIC RESONANCE IONIC PROPULSOR. |
| GB9114038D0 (en) * | 1991-06-26 | 1991-08-14 | Atomic Energy Authority Uk | Gas sensor |
| US5198725A (en) * | 1991-07-12 | 1993-03-30 | Lam Research Corporation | Method of producing flat ecr layer in microwave plasma device and apparatus therefor |
| US5466929A (en) * | 1992-02-21 | 1995-11-14 | Hitachi, Ltd. | Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus |
| JP3054302B2 (en) * | 1992-12-02 | 2000-06-19 | アプライド マテリアルズ インコーポレイテッド | Plasma emission system to reduce charging on semiconductor wafers during ion implantation |
| JP3123735B2 (en) * | 1995-04-28 | 2001-01-15 | 株式会社日立製作所 | Ion beam processing equipment |
| GB9710380D0 (en) * | 1997-05-20 | 1997-07-16 | Applied Materials Inc | Electron flood apparatus for neutralising charge build-up on a substrate during ion implantation |
| US6271529B1 (en) * | 1997-12-01 | 2001-08-07 | Ebara Corporation | Ion implantation with charge neutralization |
| US6184532B1 (en) | 1997-12-01 | 2001-02-06 | Ebara Corporation | Ion source |
| US6288357B1 (en) * | 2000-02-10 | 2001-09-11 | Speedfam-Ipec Corporation | Ion milling planarization of semiconductor workpieces |
| US6627884B2 (en) * | 2001-03-19 | 2003-09-30 | Kla-Tencor Technologies Corporation | Simultaneous flooding and inspection for charge control in an electron beam inspection machine |
| US6922019B2 (en) * | 2001-05-17 | 2005-07-26 | The Regents Of The University Of California | Microwave ion source |
| US7176469B2 (en) * | 2002-05-22 | 2007-02-13 | The Regents Of The University Of California | Negative ion source with external RF antenna |
| US6975072B2 (en) * | 2002-05-22 | 2005-12-13 | The Regents Of The University Of California | Ion source with external RF antenna |
| US20060042752A1 (en) * | 2004-08-30 | 2006-03-02 | Rueger Neal R | Plasma processing apparatuses and methods |
| TWI546858B (en) * | 2014-04-17 | 2016-08-21 | 紫焰科技股份有限公司 | Noncontact physical etching system and method thereof |
| CN110416072A (en) * | 2019-07-30 | 2019-11-05 | 上海华力集成电路制造有限公司 | Improve the method for the online particle of silicon wafer in ion implantation technology |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3523210A (en) * | 1966-05-20 | 1970-08-04 | Xerox Corp | Gas discharge neutralizer including a charged particle source |
| US3556600A (en) * | 1968-08-30 | 1971-01-19 | Westinghouse Electric Corp | Distribution and cutting of rocks,glass and the like |
| US3790411A (en) * | 1972-03-08 | 1974-02-05 | Bell Telephone Labor Inc | Method for doping semiconductor bodies by neutral particle implantation |
| US4361762A (en) * | 1980-07-30 | 1982-11-30 | Rca Corporation | Apparatus and method for neutralizing the beam in an ion implanter |
| US4463255A (en) * | 1980-09-24 | 1984-07-31 | Varian Associates, Inc. | Apparatus for enhanced neutralization of positively charged ion beam |
| JPS5779621A (en) * | 1980-11-05 | 1982-05-18 | Mitsubishi Electric Corp | Plasma processing device |
| US4419203A (en) * | 1982-03-05 | 1983-12-06 | International Business Machines Corporation | Apparatus and method for neutralizing ion beams |
| FR2537777A1 (en) * | 1982-12-10 | 1984-06-15 | Commissariat Energie Atomique | METHOD AND DEVICE FOR IMPLANTATION OF PARTICLES IN A SOLID |
| JPS59204231A (en) * | 1983-05-07 | 1984-11-19 | Fujitsu Ltd | Ion implantation and device therefor |
| DE3403254A1 (en) * | 1984-01-31 | 1985-08-01 | Siemens AG, 1000 Berlin und 8000 München | METHOD AND DEVICE FOR COMPENSATING CHARGES IN SECONDARY ISSUE MASS SPECTROMETRY (SIMS) ELECTRICALLY BAD CONDUCTING SAMPLES |
| JPS60202645A (en) * | 1984-03-28 | 1985-10-14 | Hitachi Ltd | Ion beam irradiator |
| US4652795A (en) * | 1985-03-14 | 1987-03-24 | Denton Vacuum Inc. | External plasma gun |
| DE3666111D1 (en) * | 1985-03-15 | 1989-11-09 | Denton Vacuum Inc | External plasma gun |
| JPS61246361A (en) * | 1985-04-23 | 1986-11-01 | Toray Ind Inc | Method and apparatus for producing coating layer |
| US4639301B2 (en) * | 1985-04-24 | 1999-05-04 | Micrion Corp | Focused ion beam processing |
-
1986
- 1986-07-28 JP JP61178435A patent/JPH0610348B2/en not_active Expired - Lifetime
-
1987
- 1987-07-27 US US07/078,086 patent/US4806829A/en not_active Expired - Lifetime
- 1987-07-28 GB GB8717806A patent/GB2194857B/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB2194857A (en) | 1988-03-16 |
| US4806829A (en) | 1989-02-21 |
| JPS6333566A (en) | 1988-02-13 |
| GB8717806D0 (en) | 1987-09-03 |
| GB2194857B (en) | 1990-10-17 |
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