JPH06102537A - Active matrix type liquid crystal display element - Google Patents

Abstract

PURPOSE:To obtain excellent visual angle characteristics by providing a control capacitance which can be formed in a simple manufacture process by using a low-cost dielectric film while avoiding decreases in the operation characteristics and reliability of a TFT. CONSTITUTION:This active matrix type liquid crystal display element is improved in the visual angle characteristics by being equipped with a pixel electrode halved into a 1st subordinate pixel electrode 1 which is connected to the TFT 5 and a 2nd subordinate pixel electrode 13 which is arranged adjacently to the 1st subordinate pixel electrode while avoiding contacting and overlapping with the 1st subordinate pixel electrode 1 in plane and is connected to the TFT 5 through the same material with the gate insulating film of the TFT 5 and electric capacitance 19 formed of a dielectric 17 made of the electrode 15 for the capacitance.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display element using a thin film transistor as a switching element of a pixel array.

[0002]

2. Description of the Related Art In recent years, electronic devices have been reduced in size and weight and reduced in power consumption. In the field of display devices, a small, lightweight, low power consumption display that replaces a CRT (Cathode Ray Tube). As a device, flat panel displays have been actively researched and developed. Among them, especially the liquid crystal display element,
It has features such as large-area display, full-color display, and low-current / low-voltage display device.

As such a liquid crystal display device, various operation systems are used according to the purpose. Among them, the active matrix liquid crystal display device is capable of displaying full-color moving images with high resolution. It has features such as, and is attracting attention.

In the active matrix type liquid crystal display element, one pixel is arranged at each intersection of electrodes arranged in a matrix, a switching element is arranged for each pixel, and the pixels connected by this switching element are arranged. The drive is controlled individually.

Such an active matrix type liquid crystal display device includes a non-linear element type and a thin film transistor (Thin Film Transistor) using a non-linear element such as a diode depending on an element used as a switching element.
The TFT can be categorized into a TFT and hereinafter referred to as a TFT) type. Among them, there is a TFT type which has been actively researched and developed and has already been put to practical use.

However, liquid crystal display devices generally use C
It has a drawback that the viewing angle is narrower than that of RT. Therefore, various techniques have been devised to improve such viewing angle characteristics.

As a conventional liquid crystal display device intended to improve the viewing angle characteristics, there is a liquid crystal display device disclosed in, for example, Japanese Patent Application Laid-Open No. 2-12. FIG. 7 shows an equivalent circuit in which the configuration is simplified.

In FIG. 7, one pixel is the first pixel area 7
01 and the second pixel area 703. Both pixel regions are connected to a common TFT 705. The TFT 705 is provided at each intersection of the scanning line 707 and the signal line 709 which are arranged to intersect. The gate of the TFT 705 has a scanning line 707 for each row.
, The drain of the TFT 705 is connected to the signal line 709 for each column, and the source of the TFT 705 is connected to the pixel electrode 7.
11 is connected.

In the first pixel region 701, the liquid crystal layer 715 is sandwiched between the pixel electrode 711 and the counter electrode 713, and the first liquid crystal capacitor 717 is formed. Further, in the second pixel region 703, the pixel electrode 711 and the counter electrode 713.
And the dielectric film 719 and the liquid crystal layer 715 are sandwiched between the second liquid crystal capacitor 721 and the pixel electrode 711 and the dielectric film 719, that is, the second liquid crystal capacitor 721. A control capacitor 723 that divides the voltage to control the voltage is formed so as to be connected in series.

In such a liquid crystal display device, the TF
During the period (switching period) in which the scanning line selection voltage (Vg.on) is applied to the gate of T705, the pixel electrode 711
Potential of the TFT 70 is set to the same potential as the video signal electrode.
During the period (holding period) in which the scanning line non-selection voltage (Vg.off) is applied to the gate of the pixel 5, the pixel electrode 711 holds this potential. Then, in the first pixel region 701, the potential difference between the pixel electrode 711 and the counter electrode 713 is applied to the first liquid crystal capacitor 717. On the other hand, in the second pixel region 703, the potential difference between the pixel electrode 711 and the counter electrode 713 is set to the second value.
The voltage divided by the liquid crystal capacitance 721 and the control capacitance 723 is applied to the second liquid crystal capacitance 721.

As described above, in the liquid crystal display device disclosed in Japanese Patent Application Laid-Open No. 2-12, one pixel is composed of two pixel regions 701 and 703 having different transmittances, and the two pixel regions are mutually arranged. By compensating for the viewing angles, the viewing angle characteristics are improved.

FIG. 8 is a diagram showing a planar structure of one pixel on an array substrate of such a liquid crystal display device. 9 is a diagram showing a cross section taken along the line AA ′ in FIG.

As shown in FIGS. 8 and 9, a glass substrate 70 is provided.
A TFT 705 is provided at each intersection of the scanning line 707 and the signal line 709 which intersect with each other.

A gate, a source and a drain are formed on the semiconductor layer 725 of the TFT 705. The gate is a gate electrode 727 formed integrally with the scanning line 707, and the drain is a drain electrode 7 formed integrally with the signal line 709.
29, the source is connected to the source electrode 731 integrally formed with the pixel electrode 711.

In such an active matrix type liquid crystal display device, the second pixel region 703 has a dielectric film 71 on the pixel electrode 711 as shown by hatching in FIG.
9 is formed, and the first pixel area 701 is an area where the dielectric film 719 on the pixel electrode 711 outside thereof is not formed. An alignment film 733 is formed on the main surface side of the array substrate so as to be in contact with the liquid crystal layer 715.

On the other hand, on the counter substrate side, a counter electrode 739 and an alignment film 741 are arranged on the glass substrate 737 so as to cover the counter electrode 739.

[0017]

However, in such a conventional liquid crystal display element, since the dielectric film 719 made of another material is formed in another step after the TFT 705 is formed, this dielectric film is not formed. There is a problem that the operating characteristics and reliability of the TFT 3 are significantly deteriorated by being heated during the process of forming the 719. In addition, such a dielectric film 7
There is a problem in that the manufacturing process is complicated and the material cost is high due to the process of forming 19 and the use of the dielectric film.

On the other hand, in order to avoid the above-mentioned deterioration of the operating characteristics and reliability of the TFT 705, the TFT 70 is
5, the dielectric film 719 must be formed at a lower temperature than when the gate insulating film 743 and the semiconductor layer 725 of FIG. Therefore, the dielectric film 719 suffers from a film insulation defect such as a pinhole defect, a good insulation property cannot be obtained, and an interlayer short circuit of the control capacitor 723 frequently occurs. There is a problem in that a voltage different from that of a normal pixel is applied and only that pixel is visually recognized in a display state different from that of other normal pixels, resulting in a pixel defect.

In addition to the above technique, for example, a technique of changing the film thickness and material of the dielectric film 719 to set various capacitance values of the control capacitor 723 using the same, A technique for arranging a capacitance for capacitance control on the counter substrate side was also devised, but such control of the film thickness of the dielectric film 719 and change of the material are not easy in actual manufacturing, and the counter substrate side is also difficult. It is very difficult to newly arrange a capacitance for capacitance control and accurately align it with an ultra-fine TFT array. As a result, the manufacturing process is complicated and the material cost is expensive. There was a problem of becoming.

The present invention has been made to solve such a problem. The purpose is to provide a good viewing angle characteristic by providing a control capacitor using a dielectric film that can be formed by a simple manufacturing process, can avoid deterioration of the operating characteristics and reliability of the TFT, and is low in material cost. It is to provide an realized active matrix type liquid crystal display device.

[0021]

In the active matrix type liquid crystal display element of the first invention, there are arranged scanning lines and signal lines arranged so as to intersect with the scanning lines in a matrix, the scanning lines and the above. A thin film transistor element, comprising: a thin film transistor element connected to a signal line; a pixel electrode connected to the thin film transistor; a counter electrode facing the pixel electrode; and a liquid crystal layer sandwiched between the pixel electrode and the counter electrode. A first subpixel electrode connected to
A dielectric and a capacitor made of the same material as the gate insulating film of the thin film transistor element and disposed adjacent to the first subpixel electrode while avoiding planar contact and overlap with the first subpixel electrode. And a second sub-pixel electrode connected to the thin film transistor element via the capacitance, and the pixel electrode divided into two.

Further, the active matrix type liquid crystal display element of the second invention is connected to the scanning lines which are arranged in a row and the signal lines which are arranged in a row so as to intersect with the scanning lines in a matrix and the scanning lines and the signal lines. A thin film transistor element, a pixel electrode connected to the thin film transistor element, a counter electrode facing the pixel electrode, and a liquid crystal layer sandwiched between the pixel electrode and the counter electrode. A first sub-pixel electrode connected to the thin film transistor element via a first dielectric capacitance formed of a dielectric material and a capacitance electrode made of the same material, and the first sub-pixel electrode And is made of the same material as the gate insulating film of the thin film transistor element so as to be adjacent to the first subpixel electrode while avoiding a planar contact with and overlapping with the first subpixel electrode. An electric body and a capacitance electrode form a second electric capacitance having a capacitance value different from the first electric capacitance, and a second subpixel electrode connected to the thin film transistor element via the electric capacitance is formed. It is characterized by having a pixel electrode divided into two. In addition, the above-mentioned first and second
In the active matrix type liquid crystal display element of the invention, the capacitance electrode is formed on an insulating substrate, the dielectric layer is formed on the capacitance electrode, and the first sub-layer is formed on the dielectric layer. The pixel electrode and the second subpixel electrode may be formed, a contact hole may be formed in a part of the dielectric layer, and the capacitor electrode and the thin film transistor element may be connected through the contact hole.

[0023]

In the active matrix type liquid crystal display element of the first invention, the pixel electrode is arranged so as to avoid the planar contact and overlap between the first subpixel electrode and the first subpixel electrode. The second subpixel electrode is connected to the thin film transistor element through an electric capacitance, and thus the voltage applied to the second subpixel electrode is , A voltage that is lower than the voltage applied to the first sub-pixel electrode by the partial voltage due to the electric capacitance, and the light transmittance and the viewing angle characteristics of the first sub-pixel and the second sub-pixel are different. become. Also in the active matrix type liquid crystal display element of the second invention, similarly, the voltage applied to the first subpixel electrode and the voltage applied to the second subpixel electrode are the same as the first capacitance and Due to the difference in the partial voltage of the second capacitance, different voltages result, and the light transmittance and the viewing angle characteristics of the first subpixel and the second subpixel differ. As a result, the viewing angles of the first sub-pixel and the second sub-pixel complement each other, and the viewing angle characteristics of one pixel as a whole are improved.

Moreover, since it is not necessary to specially form the dielectric film for the electric capacity from a material other than the constituent material of the thin film transistor, it is possible to avoid the manufacturing process from being complicated by providing the electric capacity. The manufacturing cost can be low.

Further, as a more preferable concrete structure of the first and second active matrix type liquid crystal display elements, the capacitance electrode is formed on an insulating substrate, and the dielectric electrode is formed on the capacitance electrode. Forming a body, forming the first subpixel electrode and the second subpixel electrode on the dielectric, forming a contact hole in a part of the dielectric, and passing through the contact hole to form the contact hole. By forming a connection wiring that connects the capacitor electrode and the thin film transistor element, the conventional T wiring is used except for changing the mask pattern used when forming the gate insulating film and the capacitor electrode.
Since the dielectric having the above-mentioned capacitance can be formed almost following the manufacturing process of the FT substrate, the manufacturing process can be further effectively simplified and the manufacturing cost can be reduced.

[0026]

Embodiments of the active matrix type liquid crystal display device according to the present invention will be described below in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a diagram showing a simplified structure of an active matrix type liquid crystal display element of the first embodiment by an equivalent circuit, and FIG. 2 is a plan view of one pixel on the TFT array substrate. FIG. 3 is a plan view showing the structure, and FIG.
It is a sectional view corresponding to a B'section.

The structure and operation of the active matrix type liquid crystal display device of the first embodiment will be described with reference to these figures.

One pixel electrode is divided into two in a plane and is composed of two sub-pixel electrodes, that is, a first sub-pixel electrode 1 and a second sub-pixel electrode 3. Are commonly connected to.

The first subpixel electrode 1, the liquid crystal layer 7, and the counter electrode 9 form a first subpixel 11. Further, the second subpixel electrode 3, the liquid crystal layer 7, and the counter electrode 9 form a second subpixel 13. And this second sub-pixel 1
Between the TFT 3 and the TFT 5, a dielectric 17 using the film used as the capacitor electrode 15 and the gate insulating film of the TFT 5 and the second
And the sub-pixel electrode 3 for controlling the capacitance 1
9 are connected in series. The voltage sent from the TFT 5 is capacity-divided by the electric capacity 19 and
The voltage becomes lower than the voltage applied to the sub-pixel electrode 1 and is applied to the second sub-pixel electrode 3.

As a result, the voltage applied to the first sub-pixel 11 and the voltage applied to the second sub-pixel 13 have different values, and the light applied to the first sub-pixel 11 and the light applied to the second sub-pixel 13 are different. Since the transmittance and the viewing angle characteristics are different, the first sub-pixel 11
And the viewing angles of the second sub-pixels 13 complement each other, and the viewing angle characteristics of one pixel as a whole are improved.

Moreover, the dielectric 17 used for the electric capacity 19
Since the film used for the gate insulating film of the TFT 5 is used, it is not necessary to specially form it from a material other than the material forming the TFT 5, so that the manufacturing process is complicated by providing the electric capacitance 19. It can be avoided and its manufacturing cost can be low.

Next, the structure of the active matrix type liquid crystal display device of the first embodiment of the present invention will be described in detail in accordance with its manufacturing process.

First, for example, on the main surface of the glass substrate 21,
After forming a Ta film, which is a light-shielding material, by a sputtering method, the scanning line 23 is formed by photoetching into a predetermined shape.
Further, a gate electrode 25 is formed, a transparent conductive film such as ITO is formed by a sputtering method, and then patterned by photoetching to form a capacitor electrode 15.
Next, a gate insulating film 27 made of, for example, SiO _x is formed by plasma CVD so as to cover them.

This gate insulating film 27 is used as a so-called gate insulating film of the TFT in the area of the TFT 5, and is used as the dielectric 17 in the area on the capacitor electrode 15, which is used as the second insulating film. An electric capacitance 19 for capacitance control is formed by being sandwiched between the subpixel electrode 3 and the capacitance electrode 15.

That is, in the area of the TFT 5, in the area covering the gate electrode 25 on the gate insulating film 27, for example, i-type hydrogen amorphous silicon (hereinafter referred to as aS
The semiconductor layer 29 made of i: H) is plasma CVD
It is formed using the method. On the semiconductor layer 29, ohmic layers 31 and 32 made of n-type a-Si: H, which are electrically isolated from each other, are arranged similarly by using the plasma CVD method. A drain electrode 35 formed integrally with the signal line 33 is connected to the ohmic layer 31, and a source electrode 37 is connected to the ohmic layer 32.
The drain electrode 35, the signal line 33, and the source electrode 37 are
For example, after sequentially forming a Mo film and an Al film by a sputtering method,
It is formed by photoetching into a predetermined shape.

On the other hand, in the region on the capacitance electrode 15, the gate insulating film 27 is used as the dielectric 17, and a transparent conductive film such as ITO is formed on the gate insulating film 27 by the sputtering method. After forming the film, the first sub-pixel electrode 1 formed into a predetermined shape by photoetching,
The second sub-pixel electrode 3 is arranged as two sub-pixels divided in two, avoiding direct contact and overlap in the plane.
A contact hole 57 is formed in a part of the gate insulating film 27, and the source electrode 3 is formed by the contact hole 57 via a part of the first subpixel electrode 1.
7 and the capacitor electrode 15 are connected. Then, a protective film 39 made of, for example, SiN _x is formed by plasma CVD so as to cover the entire upper surface thereof, and an alignment film 41 made of, for example, low temperature cure type polyimide is further formed on the entire surface thereof.

In this way, the TFT array substrate 43 is formed.

On the other hand, a counter electrode 9 made of a transparent conductive film such as ITO is formed on the main surface of the glass substrate 45, and an alignment film 49 made of low temperature cure type polyimide is formed so as to cover the entire surface thereof. Thus, the counter substrate 51 is formed. Then, the TFT array substrate 43 and the counter substrate 5
The rubbing alignment treatment is performed by rubbing the alignment films 41 and 49 on the first main surface in a predetermined direction with a cloth or the like.

Then, the TFT array substrate 43 and the counter substrate 5
Nos. 1 and 2 are combined so that their principal surface sides face each other and their orientation axes form an angle of 90 degrees, and a liquid crystal layer 7 is sandwiched between the substrates. Array substrate 43 and counter substrate 5
Polarizing plate 5 is provided on each of the outward surfaces opposite to the main surface of 1.
3, 55 are attached. Although illustration is omitted, back lighting, that is, a backlight is provided on the outward surface side of either the array substrate 43 or the counter substrate 51.

As described above, in the active matrix type liquid crystal display element of the first embodiment, the capacitance control electric capacitance 19 uses the gate insulating film 27 as the dielectric 17,
The gate insulating film 27 is formed by this, the capacitor electrode 15 and the second subpixel electrode 3, and the gate insulating film 27 is, for example, 300 to 4
Since it can be formed at a high temperature of about 00 ° C., sufficient insulation can be obtained without causing pinhole defects and the like. As a result, it is possible to reduce display defects of the pixel due to interlayer short-circuiting of the control capacitor, which has been conventionally caused by defective insulation, and it is possible to increase the manufacturing yield.

Moreover, the dielectric 17 for the capacitance 19 is T
Since it is not necessary to specially form a material other than the gate insulating film 27 which is a constituent material of the FT 5, it is possible to avoid complication of the manufacturing process due to the provision of the electric capacitance 19, and the manufacturing cost thereof is low. Can be

(Embodiment 2) FIG. 4 is a view showing a simplified structure of an active matrix type liquid crystal display element of a second embodiment by an equivalent circuit, FIG. 5 is a plan view showing the structure, and FIG. 6 is its layer. It is sectional drawing which shows a structure.

One pixel electrode is divided into two in a plane and is divided into a first subpixel electrode 401 and a second subpixel electrode 403.
It is composed of two subpixel electrodes, and the TFT 405 is commonly connected to both subpixel electrodes 401 and 403.

The first subpixel electrode 401 and the liquid crystal layer 40
7 and the counter electrode 409 form a first subpixel 411. Further, the second subpixel electrode 403, the liquid crystal layer 407, and the counter electrode 409 form a second subpixel 413. The capacitor electrode 415 and the gate insulating film 4 of the TFT 405 are provided between the first subpixel 411 and the TFT 405.
The first capacitance 41 for capacitance control, which is composed of the dielectric 417 and the first subpixel electrode 401 using the same film as that of No. 23.
9 are connected in series.

Further, between the second subpixel 413 and the TFT 405, there is formed a capacitor electrode 415, a dielectric 417 using the same film as the gate insulating film 423 of the TFT 405, and a second subpixel electrode 403. A second capacitance 421 for capacitance control is connected in series.

That is, the active matrix liquid crystal display element of the second embodiment is connected to the first subpixel 11 and the second subpixel 13 of the active matrix liquid crystal display element of the first embodiment. The second capacitance 4 having a capacitance value different from that of the capacitance control capacitance 19.
It can be said that 21 is connected in series.

The TFT 405 and the sub-pixels 411 and 41
The layer structure of No. 3 is almost the same as that of the first embodiment, except that FIG.
As can be seen in FIG.
The area of the first electric capacity 419 included in 11 and the area of the second electric capacity 421 included in the second subpixel 413 are different. For example, in this embodiment, the area of the first electric capacitance 419 of the first subpixel 411 is larger than the area of the second electric capacitance 421 of the second subpixel 413. ing. This is realized by making the area of the capacity electrode 415 forming the first electric capacity 419 different from the area of the capacity electrode 415 forming the second electric capacity 421.

As described above, by making the areas different, the first electric capacitance 419 and the second electric capacitance 421 are set to different capacitance values.

These first capacitance 419 and second capacitance
Of the electric capacitance 421 of the first subpixel 411 and the second subpixel
By connecting the sub-pixels 413 in series with each other, the voltage sent from the TFT 405 is capacity-divided by the electric capacities 419 and 421, respectively.
The value of the voltage applied to the sub-pixel electrode 401 is different from the value of the voltage applied to the second sub-pixel electrode 403. As a result, the applied voltage of the first sub-pixel 411 and the second
The applied voltages of the sub-pixels 413 have different values, and the light transmittance and the viewing angle characteristics of the first sub-pixel 411 and the second sub-pixel 413 are different from each other.
The viewing angles of the eleventh and second sub-pixels 413 complement each other and the viewing angle characteristics of one pixel as a whole are improved.

Moreover, since the dielectric 417 used for the electric capacitors 419 and 421 uses the film used for the gate insulating film 423 of the TFT 405, it is not necessary to specially form it from a material other than the material forming the TFT 405. Therefore, it is possible to avoid complication of the manufacturing process due to the provision of the electric capacitors 419 and 421, and it is possible to reduce the manufacturing cost.

Furthermore, the capacitance values of the first electric capacitance 419 and the second electric capacitance 421 are the dielectrics 41 of each of them.
7 are set to different values by making the areas thereof different, and a contact hole 425 is formed in the dielectric 417, and a source electrode 427 and a capacitor electrode 415 extended through the contact hole 425. Are connected.

Therefore, when forming the dielectric 417, the same film as the gate insulating film 423 is used, and when this film is patterned by photoetching or the like, the first capacitance 419 and the second capacitance 419 are formed. Only by changing the mask pattern so that the area of the capacitor 421 is different from that of the capacitor 421, the first capacitor 419 and the second capacitor 421 can be formed.
Can have different capacitance values.

Thus, the capacitance value is controlled by adjusting the layer thickness of the dielectric 417 as in the conventional case, or the dielectric 41 is controlled.
It is possible to avoid adding a complicated process such as changing the material of No. 7 and making the capacitance values of the first electric capacitance 419 and the second electric capacitance 421 different.

The gate insulating film 4 of the TFT 405
The material and the film thickness of 23 follow the specifications of a film used for a general TFT, but the gate insulating film 423 having such a specification has a dielectric constant suitable as the dielectric 417.

The gate insulating film 423 is a TFT
It goes without saying that the gate insulating film 423 and the dielectric 417 of 405 can be changed to further suitable film thicknesses and materials.

[0057]

As described above in detail, according to the present invention, it is possible to form by a simple manufacturing process,
Provided is an active matrix type liquid crystal display device which realizes a good viewing angle characteristic by providing a control capacitor using a dielectric film which can avoid deterioration of the operating characteristics and reliability of the TFT and has a low material cost. be able to.

[Brief description of drawings]

FIG. 1 is an equivalent circuit diagram showing a configuration of an active matrix type liquid crystal display element of a first invention.

FIG. 2 is a plan view showing the configuration of one pixel portion of the active matrix liquid crystal display element of the first invention.

FIG. 3 is a cross-sectional view showing the layer structure of one pixel portion of the active matrix liquid crystal display element of the first invention. Sectional drawing of one pixel part in the Example shown in FIG.

FIG. 4 is an equivalent circuit diagram showing a configuration of an active matrix type liquid crystal display element of a second invention.

FIG. 5 is a plan view showing the configuration of one pixel portion of an active matrix type liquid crystal display element of the second invention.

FIG. 6 is a cross-sectional view showing the layer structure of one pixel portion of an active matrix type liquid crystal display element of the second invention.

FIG. 7 is an equivalent circuit diagram showing a configuration of a conventional active matrix type liquid crystal display element.

FIG. 8 is a plan view showing the configuration of one pixel portion of a conventional active matrix liquid crystal display element.

FIG. 9 is a cross-sectional view showing a layer structure of one pixel portion of a conventional active matrix type liquid crystal display element.

[Explanation of symbols]

1 ... 1st subpixel electrode, 3 ... 2nd subpixel electrode, 5 ... T
FT, 7 ... Liquid crystal layer, 9 ... Counter electrode, 11 ... First subpixel, 13 ... Second subpixel, 15 ... Capacitance electrode, 17 ... Dielectric material, 19 ... Electric capacitance, 21 ... Glass substrate, 23 ... Scan line, 25 ... Gate electrode, 27 ... Gate insulating film, 29 ... Semiconductor layer, 31, 32 ... Ohmic layer, 33 ... Signal line, 3
5 ... Drain electrode, 37 ... Source electrode, 39 ... Protective film,
41 ... Alignment film, 57 ... Contact hole

Claims (3)

[Claims] 1. A scanning line arranged in a row, a signal line arranged so as to intersect the scanning line in a matrix, a thin film transistor element connected to the scanning line and the signal line, and a pixel electrode connected to the thin film transistor element. In a liquid crystal display element having a counter electrode facing the pixel electrode and a liquid crystal layer sandwiched between the pixel electrode and the counter electrode, a first subpixel electrode connected to the thin film transistor element and a first subpixel electrode connected to the thin film transistor element. Electricity is provided by a dielectric and a capacitor electrode which are arranged adjacent to the first subpixel electrode while avoiding planar contact and overlap with the pixel electrode and made of the same material as the gate insulating film of the thin film transistor element. An active matrix comprising: a pixel electrode which is divided into two and a second subpixel electrode which forms a capacitance and is connected to the thin film transistor element through the electric capacitance. Liquid crystal display element. 2. A scanning line arranged in a row, a signal line arranged so as to intersect with the scanning line in a matrix, a thin film transistor element connected to the scanning line and the signal line, and a pixel electrode connected to the thin film transistor element. In a liquid crystal display device having a counter electrode facing this and a liquid crystal layer sandwiched between the pixel electrode and the counter electrode, a dielectric and a capacitor electrode made of the same material as the gate insulating film of the thin film transistor element, To form a first capacitance and to avoid planar contact and overlap between the first subpixel electrode connected to the thin film transistor element via the capacitance and the first subpixel electrode, and avoiding the first capacitance. A dielectric and a capacitor electrode, which are arranged adjacent to one subpixel electrode and are made of the same material as the gate insulating film of the thin film transistor element, have a capacitance different from the first capacitance. An active matrix type liquid crystal display comprising: a second sub-pixel electrode connected to the thin film transistor element through the second electric capacitance having a value and a pixel electrode divided into two. element. 3. The capacitor electrode is formed on an insulating substrate, the dielectric layer is formed on the capacitor electrode, and the first subpixel electrode and the second layer are formed on the dielectric layer. 2. The subpixel electrode is formed, a contact hole is formed in a part of the dielectric layer, and the capacitor electrode and the thin film transistor element are connected through the contact hole. The active matrix liquid crystal display element according to claim 2.