JPH059945B2 - - Google Patents
Info
- Publication number
- JPH059945B2 JPH059945B2 JP57050886A JP5088682A JPH059945B2 JP H059945 B2 JPH059945 B2 JP H059945B2 JP 57050886 A JP57050886 A JP 57050886A JP 5088682 A JP5088682 A JP 5088682A JP H059945 B2 JPH059945 B2 JP H059945B2
- Authority
- JP
- Japan
- Prior art keywords
- bias contact
- detector
- output
- contact
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005684 electric field Effects 0.000 claims description 26
- 238000001514 detection method Methods 0.000 claims description 22
- 239000011148 porous material Substances 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 4
- 230000006866 deterioration Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 14
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 11
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 11
- 238000009825 accumulation Methods 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8109928 | 1981-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57175224A JPS57175224A (en) | 1982-10-28 |
| JPH059945B2 true JPH059945B2 (de) | 1993-02-08 |
Family
ID=10520772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57050886A Granted JPS57175224A (en) | 1981-03-30 | 1982-03-29 | Photoconductive detector |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS57175224A (de) |
| DE (1) | DE3211769C2 (de) |
| FR (1) | FR2502846B1 (de) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491196A (en) * | 1977-12-28 | 1979-07-19 | Toshiba Corp | Production of photoconductive array-shaped infrared detector |
| JPS55158682A (en) * | 1979-05-29 | 1980-12-10 | Matsushita Electric Ind Co Ltd | Photoconductive cell and manufacture thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1488258A (en) * | 1974-11-27 | 1977-10-12 | Secr Defence | Thermal radiation imaging devices and systems |
| DE2702571C3 (de) * | 1977-01-22 | 1982-02-04 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Kontaktstruktur für ein Vielfach- Halbleiterbauelement |
| GB2007909B (en) * | 1977-11-04 | 1982-02-10 | Secr Defence | Method and apparatus for parallel-in to serial-out conversion |
| GB2019649B (en) * | 1978-04-25 | 1982-05-06 | Secr Defence | Imaging device and systems |
-
1982
- 1982-03-25 FR FR8205109A patent/FR2502846B1/fr not_active Expired
- 1982-03-29 JP JP57050886A patent/JPS57175224A/ja active Granted
- 1982-03-30 DE DE19823211769 patent/DE3211769C2/de not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491196A (en) * | 1977-12-28 | 1979-07-19 | Toshiba Corp | Production of photoconductive array-shaped infrared detector |
| JPS55158682A (en) * | 1979-05-29 | 1980-12-10 | Matsushita Electric Ind Co Ltd | Photoconductive cell and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2502846B1 (fr) | 1986-08-01 |
| JPS57175224A (en) | 1982-10-28 |
| DE3211769A1 (de) | 1982-12-16 |
| DE3211769C2 (de) | 1996-05-09 |
| FR2502846A1 (fr) | 1982-10-01 |
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