JPH0598430A - Formation of film by ion plating method - Google Patents

Abstract

PURPOSE:To provide the method for forming a film capable of obtaining a film of quality with tight adhesive force under the conditions by which the damage of the film is small in an ion plating method used for the formation of a film such as a ceramic film. CONSTITUTION:The material 5 to be deposited by evaporation is irradiated with an electron beam 6 emitted from an electron gun 1, which is heated and evaporated to form a film on a base metal 10. At this time, film forming is executed while the surface of the base metal 10 is irradiated with hydrogen ion beams 19 by an ion gun 16, by which the film with tight adhesive force is formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a compound coating film of good quality and high adhesion strength by an ion plating method.

[0002]

2. Description of the Related Art At present, a CVD (chemical vapor deposition) method, an ion beam sputtering method, an ion plating method or the like is used for coating an abrasion resistant film used for a cutting tool or the like.

The CVD method has a high film-forming rate and a high adhesion strength, but since the base material needs to be heated to 500 to 1000 ° C. at the time of film-forming, it is not possible to coat precision processed parts and low melting point substances. Absent. In addition, the ion beam sputtering method is a film formation method that utilizes the sputtering phenomenon. Furthermore, by using the dynamic mixing method in which the base material is irradiated with ions during film formation, it is possible to form a film at a temperature of 200 ° C or less, and the adhesion strength Can also obtain a strong coating. However, since the film forming speed is slow, it is not used industrially. On the other hand, in the ion plating method, the base material temperature during film formation is 300
Although it is relatively low at ~ 500 ° C and the film formation rate is fast, the adhesion strength of the coating becomes weaker than that of the ion beam sputtering method because the bias potential that can be applied to the base material is about several hundred eV.

In order to improve the adhesion strength as described above, a conventional method is to attach an ion gun to a vacuum container and irradiate introduced gas ions directly to a base material holder during film formation with an acceleration voltage of several keV to several tens keV. Is used. However, when forming a carbide or oxide film, it is difficult to irradiate stable carbon ions and oxygen ions due to problems of the life of the filament of the ion gun and contamination, and the above method is mainly used only when forming a nitride film.

[0005]

Thus, in the method of forming a compound film having a high adhesion strength by the ion plating method, means for applying high energy to the film during film formation is required.

Therefore, an object of the present invention is to provide a film forming method using an ion plating method capable of forming a compound film having high adhesion strength by irradiating a base material with hydrogen ions which can be supplied relatively stably during film formation. To provide.

[0007]

In order to achieve the above object, a method of forming a film by an ion plating method using hydrogen ions according to the present invention is a base material during film formation by an ion gun provided in a vacuum container. It is characterized in that it is directly irradiated with hydrogen ions to promote mixing at the interface between the base material and the coating and reaction in the coating.

[0008]

In the method of the present invention thus constructed, the hydrogen ion beam emitted from the ion gun irradiates the base material during film formation, so that the interface between the base material and the coating film is initially formed. In the above, a mixing action is caused by colliding with both atoms, and after the middle stage of film formation, energy is applied to the vapor deposition material and the introduced gas to promote both reactions. Since hydrogen ions have a small mass, there is little damage given to the sputtering or the coating, and a high-quality compound coating having high adhesion strength can be obtained.

[0009]

Embodiment An embodiment of the present invention will be described with reference to FIG. A hollow cathode electron gun 1, a crucible 2 for evaporating a metal, a base material holder 3 to which a DC negative or high frequency bias potential is applied so that ionized vaporized particles and an introduced gas are accelerated and incident in the vacuum container 12. Further, an ion gun 16 for irradiating the base material with hydrogen ions is installed. If the ionization rate of the vaporized particles and the introduced gas is low, the ionization electrode 18 is installed. In order to form a compound film, the vacuum container 12 is used to reduce the inclusion of impurities in the film.
The inside is exhausted to the level of 10 to ⁴ Pa, and then the flow rate from the cathode 13
Argon gas of 4 to 20 sccm is introduced into the electron gun 1. Further, a reaction gas such as nitrogen, hydrocarbon, oxygen or the like having a volume of several tens of sccm is introduced into the vacuum container 12 through the gas introduction port 4.

On the other hand, the ion gun 16 attached to the vacuum container 12 is supplied with hydrogen gas from the gas inlet 17 at 4 to 10 sccm.
It is introduced and the base metal is irradiated with hydrogen ions at an acceleration voltage of 10 to 100 keV.

The evaporation material 5 is installed in the crucible, and the orbit of the electron beam 6 is controlled by the electromagnet 7 to irradiate the evaporation material 5. Evaporated substance 5 irradiated with electron beam 6
Is heated and evaporated, and is deposited on the upper base material 10 while being ionized on the way. On the other hand, the introduction gas introduced from the gas introduction port 4 is also similarly subjected to the electron beam 6 or the ionization electrode 1
It is ionized by 8 and accelerated to reach the base material 10 and reacts with the vaporized substance 5 to form a compound film. At this time, the hydrogen ions 19 emitted from the ion gun 16 also reach the base material 10 and collide with the vaporized substances and introduced gas atoms to promote mixing or reaction.

As described above, when the compound film is formed,
By using the ion plating method in which hydrogen ion irradiation is also used, a high-quality compound film having high adhesion strength can be obtained. If an orifice valve is provided at the exhaust port 8 and a detector is installed at the DC power supply 15 and the orifice valve and the detector are connected to a programmable controller,
The detector senses the time when the electron beam 6 shifts from glow discharge to arc discharge, and sends this signal to the programmable controller to turn off the filament power supply (not shown) and adjust the orifice valve to exhaust gas. Therefore, it becomes possible to stabilize the electron beam 6 by suppressing a rapid increase in current when the electron beam 6 shifts from glow discharge to arc discharge.

[0013]

According to the present invention, when a compound coating film is formed by the ion plating method, the base material is irradiated with hydrogen ions during the film formation by an ion gun attached to a vacuum container, so that the base material adheres with high quality. A strong compound film can be formed. Therefore, it becomes possible to coat a precision coating component or a low melting point substance with a compound coating, which has been difficult until now, and it is possible to improve the life and performance of a wide range of consumable components.

[Brief description of drawings]

FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

[Explanation of symbols]

1 is a hollow cathode electron gun, 2 is a crucible, 3 is a base material holder, 4 is a reaction gas introducing port, 5 is a vapor deposition material, 6 is an electron beam, 7 is an electromagnet, 8 is an exhaust port, 9 is a shutter, 10 is a base material. , 11 is a bias power supply, 12 is a vacuum container, 13 is a cathode, 14 is a insulator, 15 is a direct current power supply, 16 is an ion gun, 17 is a gas inlet, 18 is an ionization electrode, and 19 is a hydrogen ion beam.

Claims (1)

[Claims] 1. A crucible to which a predetermined positive potential for mounting a metal serving as an evaporation source of a coating is applied in a vacuum container,
An electron gun that emits an electron beam for melting metal,
In the ion plating method in which the evaporation material and the introduced gas are ionized by the ionization means on the base material holder capable of applying a negative potential or a high frequency to the crucible, and a compound coating is formed, an ion gun is provided in the vacuum container, A method for forming a film by an ion plating method, which comprises irradiating a base material with hydrogen ions during film formation.