JPH0595111A - Quantum element and its manufacture - Google Patents

Abstract

PURPOSE:To provide a manufacturing method of a quantum element consisting of two quantum dots connected to a quantum fine line though a quantum fine line and an insulating film. CONSTITUTION:This method is composed of a first process to form a mask of a specified configuration on a single crystal silicon 3 formed on an insulating film 4, a second process to form a silicon crystal 5 by epitaxial growth and a third process to form a quantum dot on an insulating film by processing the silicon crystal 5 and the single crystal silicon 3 to a specified shape. Thereby, a quantum element of the constitution can be formed readily.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a quantum device.

[0002]

2. Description of the Related Art In recent years, the progress of semiconductor devices has led to higher integration and finer design rules. With the progress of such miniaturization, there is an increasing need to develop a new element structure different from the conventional transistor structure. Devices utilizing the quantum effect have been studied as such new devices. (Journal of the Institute of Electronics, Information and Communication Engineers Vol.
72, No12, pp1387 to 1391, December 1989) In order to induce the quantum effect, there is a technique of forming dots or fine lines having dimensions on the order of the wavelength of electrons, and a technique of combining them to form a circuit. Development is needed.

A quantum device having the structure as in the present invention has not been proposed at present, but a quantum device having a completely new structure is proposed here.

[0004]

DISCLOSURE OF THE INVENTION The present invention provides a manufacturing method capable of easily forming a quantum device.

[0005]

According to the method of manufacturing a quantum device of the present invention, a first step of forming a mask having a predetermined shape on a single crystal silicon formed on an insulating film, and a silicon crystal by epitaxial growth. A method of manufacturing a quantum device comprising a second step of forming and a third step of forming the quantum dots on an insulating film by processing the silicon crystal and the single crystal silicon into a predetermined shape.

[0006]

With the above-described structure, the present invention makes it possible to fabricate a quantum device in which quantum dots and quantum wires are combined.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a quantum device according to an embodiment of the present invention will be described below with reference to the drawings.

(FIG. 1) and (FIG. 2) show a method of manufacturing a quantum device according to an embodiment of the present invention. In FIGS. 1 and 2, 1 is a silicon substrate, 2 is a silicon oxide film, 3 is single crystal silicon, 4 is a silicon oxide film, 5 is an epi-grown silicon film, 6 is a quantum wire, 8 is a quantum wire, and 9 is a quantum wire. It is a dot. 1 (a), (b), (d), and (e) are cross-sectional views, and (c) is a top view. Further, FIG. 2A is a top view, and FIG. 2B is a view seen obliquely. The manufacturing flow of the method for manufacturing the quantum device configured as described above will be described below.

In FIG. 1 (a), on a silicon substrate 1,
A silicon oxide film 2, a single crystal silicon 3 and a silicon oxide film 4 are formed. In FIG. 1B, the silicon oxide film 4 is etched into a predetermined shape. FIG. 1 (c) is a top view at this time. In FIG. 1D, the silicon oxide film 4
The silicon crystal is epitaxially grown from the single crystal silicon 3 appearing on the surface by etching to form an epi-grown silicon film 5. In FIG. 1E, the epitaxially grown silicon film 5 is etched into a predetermined shape to form a quantum wire 6. FIG. 2A is a view of the state at this time as viewed from above. In FIG. 2B, the quantum wires 6, the silicon oxide film 4, and the single crystal silicon 3 are etched into a predetermined shape, and the quantum wires 8 and 2 formed on the silicon oxide film 2 with the silicon oxide film 4 interposed therebetween. A quantum element consisting of one quantum dot 9 is obtained.

In this embodiment, since the quantum dots 9 are made of the epitaxially grown silicon film 5 epitaxially grown from the single crystal silicon 3, the quantum dots having excellent crystallinity can be formed. In addition, since the quantum wires 8 and the quantum dots 9 are formed by simultaneously etching the silicon oxide film 2 having a two-dimensional shape and the quantum wires 6 having a one-dimensional shape into a thin wire shape, respectively, the fabrication is easy and the alignment is misaligned. It is possible to form a small device. As described above, according to this example, a method of manufacturing a quantum element including two quantum dots connected to the quantum wire through the quantum wire and the insulating film, which is easy to manufacture, can be obtained.

In this embodiment, the epitaxially grown silicon film 5 is formed by epitaxially growing the single crystal silicon 3.
It is also possible to deposit a polycrystalline silicon film and to single-crystallize all or part of it to form a silicon film having good crystallinity, instead of forming a silicon film.

FIG. 3 is an application example of the quantum device manufactured according to the present invention. In FIG. 3, 1 is a silicon substrate,
2 is a silicon oxide film, 4 is a silicon oxide film, 8 is a quantum wire, 9 is a quantum dot, 10 is a silicon oxide film, and 11 is a quantum wire.

In FIG. 3, a quantum wire 11 is connected through a silicon oxide film 10 to the quantum wire 8 and the quantum dot 9 formed by the manufacturing method shown in FIGS. With the structure shown in FIG. 3, by forming an electrode on the quantum dot 9 and modulating the band structure inside the quantum dot 9, the current from the quantum wire 11 is conducted to the quantum wire 8 through the quantum dot 9. It is possible to control whether or not to allow it. Similarly, from the quantum wire 8 to the quantum wire 12
The conduction to the can also be controlled.

As described above, in this application example, FIG.
By connecting the quantum elements shown in (c) and controlling each quantum dot, a circuit can be configured and a logic circuit can be formed.

[0015]

INDUSTRIAL APPLICABILITY As described above, the present invention is connected to the quantum wire through the quantum wire and the insulating film, which are easy to manufacture.
A method of manufacturing a quantum device including one quantum dot is obtained.

[Brief description of drawings]

FIG. 1 is a diagram showing a method of manufacturing a quantum device according to an embodiment of the present invention.

FIG. 2 is a diagram showing an application example of the quantum device in the embodiment of the present invention.

FIG. 3 is a diagram showing an application example of the quantum device in the embodiment of the present invention.

[Explanation of symbols]

 1 Silicon Substrate 2 Silicon Oxide Film 3 Single Crystal Silicon 4 Silicon Oxide Film 5 Epi-Growth Silicon Film 6 Quantum Wires 7 Quantum Dots 8 Quantum Wires 9 Quantum Dots 10 Silicon Oxide Films 11 Quantum Wires 12 Quantum Wires 13 Quantum Dots

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshihiko Hirai 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Masaaki Niwa, 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. 72) Inventor Atsuo Wada 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) In Ren Morimoto, 1006 Kadoma, Kadoma City Osaka Prefecture

Claims (3)

[Claims] 1. A first step of forming a mask having a predetermined shape on single crystal silicon formed on an insulating film, a second step of forming a silicon crystal by epitaxial growth, and the silicon crystal and the single crystal. A method of manufacturing a quantum device, comprising a third step of processing silicon into a predetermined shape to form quantum dots on an insulating film. 2. A quantum device according to claim 1, wherein the method for forming a silicon crystal is not epitaxial growth but is formed by depositing polycrystalline silicon and then partially or entirely subjecting it to single crystallization. Method. 3. A quantum device comprising a quantum wire made of single crystal silicon formed on an insulating film and two quantum dots connected to the quantum wire via an insulating film.