JPH0590010A - Thick-film thermistor - Google Patents
Thick-film thermistorInfo
- Publication number
- JPH0590010A JPH0590010A JP25097691A JP25097691A JPH0590010A JP H0590010 A JPH0590010 A JP H0590010A JP 25097691 A JP25097691 A JP 25097691A JP 25097691 A JP25097691 A JP 25097691A JP H0590010 A JPH0590010 A JP H0590010A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thermistor
- glass
- insulating substrate
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、厚膜サーミスタに関す
るものである。FIELD OF THE INVENTION The present invention relates to a thick film thermistor.
【0002】[0002]
【従来の技術】従来、厚膜サーミスタは、アルミナ等の
絶縁基板上に銀パラジウム系導電ペーストを印刷焼成し
て電極を形成し、その上に厚膜サーミスタペーストを印
刷焼成してサーミスタ層を形成し、その上にガラスから
なる保護膜を形成していた。2. Description of the Related Art Conventionally, a thick film thermistor is formed by printing and firing a silver-palladium-based conductive paste on an insulating substrate such as alumina to form an electrode, and then printing and firing a thick film thermistor paste on the thermistor layer. Then, a protective film made of glass was formed on it.
【0003】[0003]
【発明が解決しようとする課題】このように従来の厚膜
サーミスタは、サーミスタ層の上にガラスからなる保護
膜を形成していたが、長時間の耐湿試験において保護膜
とアルミナ等の絶縁基板との界面から水が浸透し耐湿性
が劣化するという問題点を有していた。As described above, in the conventional thick film thermistor, the protective film made of glass is formed on the thermistor layer, but the protective film and the insulating substrate made of alumina or the like are subjected to the moisture resistance test for a long time. There is a problem that water permeates from the interface with and moisture resistance deteriorates.
【0004】本発明は、上記課題を解決するもので、サ
ーミスタ層への水の浸透を防ぎ耐湿性を向上させること
を目的としている。The present invention has been made to solve the above problems, and an object of the present invention is to prevent water from penetrating into the thermistor layer and improve the moisture resistance.
【0005】[0005]
【課題を解決するための手段】本発明は上記目的を達成
するために、絶縁性基板と、この絶縁性基板上に設けら
れたガラスからなるアンダーグレーズ層と、このアンダ
ーグレーズ層の上に設けられたサーミスタ層と、このサ
ーミスタ層上に設けられたガラスからなる保護膜とを有
するものである。In order to achieve the above object, the present invention provides an insulating substrate, an underglaze layer made of glass provided on the insulating substrate, and an underglaze layer provided on the underglaze layer. The thermistor layer thus prepared and a protective film made of glass provided on the thermistor layer.
【0006】[0006]
【作用】本発明によれば、アンダーグレーズ層が備えら
れているため、保護膜のガラスがアンダーグレーズ層の
ガラスと密着し、サーミスタ層の気密性が保たれ、水の
浸透を防ぐという効果がある。According to the present invention, since the underglaze layer is provided, the glass of the protective film adheres to the glass of the underglaze layer, the airtightness of the thermistor layer is maintained, and the effect of preventing water penetration is obtained. is there.
【0007】[0007]
【実施例】以下本発明の一実施例の厚膜サーミスタにつ
いて図面を用いて参照しながら説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A thick film thermistor according to an embodiment of the present invention will be described below with reference to the drawings.
【0008】(実施例1)図1(a),(b)に示すよ
うに純度96%のアルミナ基板1上にSiO2,BaO
を主成分とするガラスペーストを印刷し850℃で焼成
して、アンダーグレーズ層2を形成する。なお、このア
ンダーグレーズの軟化点は約780℃である。続いてア
ンダーグレーズ層2上に厚膜銀パラジウムペーストを印
刷し、850℃で焼成し電極3を形成する。次に、Mn
O2,CoO,NiOを主成分とする厚膜サーミスタペ
ーストを1対の電極3間をつなぐように印刷し、850
℃で焼成してサーミスタ層4を形成する。この後、アン
ダーグレーズ層2と同じガラスペーストを印刷し、85
0℃で焼成して第1の保護コート層5を形成し、さら
に、その上にほう珪酸ガラスを印刷し、600℃で焼成
して第2の保護コート層6を形成する。Example 1 As shown in FIGS. 1A and 1B, SiO 2 and BaO were formed on an alumina substrate 1 having a purity of 96%.
The glass paste containing as a main component is printed and baked at 850 ° C. to form the underglaze layer 2. The softening point of this underglaze is about 780 ° C. Subsequently, a thick film silver palladium paste is printed on the underglaze layer 2 and baked at 850 ° C. to form the electrode 3. Next, Mn
A thick film thermistor paste containing O 2 , CoO, and NiO as the main components is printed so as to connect between the pair of electrodes 3, and 850
The thermistor layer 4 is formed by baking at a temperature of ° C. After this, the same glass paste as the underglaze layer 2 is printed,
The first protective coat layer 5 is formed by baking at 0 ° C., borosilicate glass is printed on the first protective coat layer 5, and the second protective coat layer 6 is formed by baking at 600 ° C.
【0009】このように構成された本実施例における厚
膜サーミスタのB定数は2640Kであり、耐湿試験
(PCT)100時間での抵抗値ドリフトは1%以内で
あった。The B-constant of the thick film thermistor in this example thus constituted was 2640K, and the resistance value drift within 100 hours of the humidity resistance test (PCT) was within 1%.
【0010】(比較例1)次に上記実施例の比較例とし
て、図2(a),(b)に示すように、実施例1と同様
に純度96%のアルミナ基板上に厚膜銀パラジウムペー
ストを印刷し、850℃で焼成し電極3を形成させる。
次に、MnO2,CoO,NiOを主成分とする厚膜サ
ーミスタペーストを1対の電極3間をつなぐように印刷
し、850℃で焼成してサーミスタ層4を形成する。そ
の後、SiO2,BaOを主成分とするガラスペースト
を印刷し、850℃で焼成して第1の保護コート層5を
形成し、続いてその上にほう珪酸ガラスを印刷し、60
0℃で焼成して第2の保護コート層6を形成する。COMPARATIVE EXAMPLE 1 Next, as a comparative example of the above example, as shown in FIGS. 2A and 2B, thick film silver palladium was formed on an alumina substrate having a purity of 96% as in Example 1. The paste is printed and baked at 850 ° C. to form the electrode 3.
Next, a thick film thermistor paste containing MnO 2 , CoO, and NiO as main components is printed so as to connect between the pair of electrodes 3, and is baked at 850 ° C. to form the thermistor layer 4. After that, a glass paste containing SiO 2 and BaO as main components is printed and baked at 850 ° C. to form the first protective coat layer 5, and subsequently, borosilicate glass is printed on the first protective coat layer 5.
The second protective coat layer 6 is formed by baking at 0 ° C.
【0011】このアンダーグレーズ層を有さない厚膜サ
ーミスタのB定数は2560Kであり、耐湿試験100
時間後の抵抗値ドリフトは約10%であった。The B constant of the thick film thermistor having no underglaze layer is 2560K, and the moisture resistance test 100
The resistance drift over time was about 10%.
【0012】これは、アルミナ基板1と保護コート層
5,6との界面から水が浸透しサーミスタ層4中へ入り
込んだためであると考えられる。It is considered that this is because water permeated from the interface between the alumina substrate 1 and the protective coat layers 5 and 6 and entered the thermistor layer 4.
【0013】つまり、アルミナ基板1上にアンダーグレ
ーズ層2を形成すると、保護コート層5のガラスを焼成
する際にアンダーグレーズ層2のガラスと密着するため
サーミスタ層4が、ち密なガラスに封じられていること
になり、外界からの水の浸透を防ぐ役割を果しているも
のと推定される。That is, when the underglaze layer 2 is formed on the alumina substrate 1, the thermistor layer 4 is sealed in a dense glass because it adheres to the glass of the underglaze layer 2 when the glass of the protective coat layer 5 is baked. Therefore, it is presumed that it plays a role of preventing the permeation of water from the outside world.
【0014】なお、保護コート層5として、アンダーグ
レーズ層と違う種類のガラスを用いても同様の効果が得
られた。The same effect was obtained even when the protective coat layer 5 was made of a glass different from that used for the underglaze layer.
【0015】[0015]
【発明の効果】以上の説明から明らかなように本発明に
よれば、絶縁性基板上にアンダーグレーズ層を形成する
ことにより、サーミスタ層の気密性を保ち、耐湿性を大
きく向上させることができる。As is apparent from the above description, according to the present invention, by forming the underglaze layer on the insulating substrate, the airtightness of the thermistor layer can be maintained and the moisture resistance can be greatly improved. .
【図1】(a)は本発明の一実施例による厚膜サーミス
タの平面図 (b)は同厚膜サーミスタのA−A′断面図FIG. 1A is a plan view of a thick film thermistor according to an embodiment of the present invention, and FIG. 1B is a sectional view taken along the line AA ′ of the thick film thermistor.
【図2】(a)は比較例の厚膜サーミスタの平面図 (b)は同厚膜サーミスタのB−B′断面図FIG. 2A is a plan view of a thick film thermistor of a comparative example, and FIG. 2B is a sectional view taken along the line BB ′ of the thick film thermistor.
1 アルミナ基板 2 アンダーグレーズ層 3 電極 4 サーミスタ層 5 第1の保護コート層 6 第2の保護コート層 1 Alumina Substrate 2 Underglaze Layer 3 Electrode 4 Thermistor Layer 5 First Protective Coating Layer 6 Second Protective Coating Layer
Claims (2)
れたガラスからなるアンダーグレーズ層と、このアンダ
ーグレーズ層の上に設けられたサーミスタ層と、このサ
ーミスタ層上に設けられたガラスからなる保護膜とを有
する厚膜サーミスタ。1. An insulating substrate, an underglaze layer made of glass provided on the insulating substrate, a thermistor layer provided on the underglaze layer, and a glass provided on the thermistor layer. A thick film thermistor having a protective film made of.
スからなる請求項1記載の厚膜サーミスタ。2. The thick film thermistor according to claim 1, wherein the underglaze layer and the protective film are made of the same glass.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25097691A JPH0590010A (en) | 1991-09-30 | 1991-09-30 | Thick-film thermistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25097691A JPH0590010A (en) | 1991-09-30 | 1991-09-30 | Thick-film thermistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0590010A true JPH0590010A (en) | 1993-04-09 |
Family
ID=17215827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25097691A Pending JPH0590010A (en) | 1991-09-30 | 1991-09-30 | Thick-film thermistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0590010A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008294326A (en) * | 2007-05-28 | 2008-12-04 | Tateyama Kagaku Kogyo Kk | Thick-film thermistor composition and method of manufacturing the same, and thick-film thermistor element |
WO2011024724A1 (en) * | 2009-08-28 | 2011-03-03 | 株式会社村田製作所 | Thermistor and method for producing same |
WO2020031768A1 (en) * | 2018-08-10 | 2020-02-13 | 株式会社村田製作所 | Thermistor and method for producing thermistor |
-
1991
- 1991-09-30 JP JP25097691A patent/JPH0590010A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008294326A (en) * | 2007-05-28 | 2008-12-04 | Tateyama Kagaku Kogyo Kk | Thick-film thermistor composition and method of manufacturing the same, and thick-film thermistor element |
WO2011024724A1 (en) * | 2009-08-28 | 2011-03-03 | 株式会社村田製作所 | Thermistor and method for producing same |
CN102483978A (en) * | 2009-08-28 | 2012-05-30 | 株式会社村田制作所 | Thermistor and method for producing same |
US8514050B1 (en) | 2009-08-28 | 2013-08-20 | Murata Manufacturing Co., Ltd. | Thermistor and method for manufacturing the same |
US8598975B2 (en) | 2009-08-28 | 2013-12-03 | Murata Manufacturing Co., Ltd. | Thermistor and method for manufacturing the same |
JP5375963B2 (en) * | 2009-08-28 | 2013-12-25 | 株式会社村田製作所 | Thermistor and manufacturing method thereof |
WO2020031768A1 (en) * | 2018-08-10 | 2020-02-13 | 株式会社村田製作所 | Thermistor and method for producing thermistor |
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