JPH0588536B2 - - Google Patents

Info

Publication number
JPH0588536B2
JPH0588536B2 JP60298428A JP29842885A JPH0588536B2 JP H0588536 B2 JPH0588536 B2 JP H0588536B2 JP 60298428 A JP60298428 A JP 60298428A JP 29842885 A JP29842885 A JP 29842885A JP H0588536 B2 JPH0588536 B2 JP H0588536B2
Authority
JP
Japan
Prior art keywords
gas
opening
nozzle
meandering
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60298428A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62158317A (ja
Inventor
Toshio Kusumoto
Hiroyuki Nawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP60298428A priority Critical patent/JPS62158317A/ja
Publication of JPS62158317A publication Critical patent/JPS62158317A/ja
Publication of JPH0588536B2 publication Critical patent/JPH0588536B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP60298428A 1985-12-28 1985-12-28 Ｃｖｄ装置用ガスノズル Granted JPS62158317A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60298428A JPS62158317A (ja) 1985-12-28 1985-12-28 Ｃｖｄ装置用ガスノズル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60298428A JPS62158317A (ja) 1985-12-28 1985-12-28 Ｃｖｄ装置用ガスノズル

Publications (2)

Publication Number Publication Date
JPS62158317A JPS62158317A (ja) 1987-07-14
JPH0588536B2 true JPH0588536B2 (enExample) 1993-12-22

Family

ID=17859574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60298428A Granted JPS62158317A (ja) 1985-12-28 1985-12-28 Ｃｖｄ装置用ガスノズル

Country Status (1)

Country Link
JP (1) JPS62158317A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3380091B2 (ja) * 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
JP4940425B2 (ja) * 2006-03-24 2012-05-30 国立大学法人京都大学 原料ガス噴出用ノズル及び化学的気相成膜装置

Also Published As

Publication number Publication date
JPS62158317A (ja) 1987-07-14

Similar Documents

Publication Publication Date Title
US20040060514A1 (en) Gas distribution showerhead
KR940009945B1 (ko) 화학기상 성장장치
TWI283437B (en) Gas distribution showerhead
TW523785B (en) Reactor for depositing thin film on wafer
JP3621393B2 (ja) ガス送出計量チューブ
EP0854210B1 (en) Vapor deposition apparatus for forming thin film
JP3380091B2 (ja) 反応ガス噴射ヘッド及び薄膜気相成長装置
EP1475824A1 (en) Plasma film forming system
JP2005506446A (ja) 原子層堆積装置及び方法
CZ582789A3 (cs) Způsob nanášení povlaku na pohybující se pás horkého skla
JP2004006551A (ja) 基板処理装置および基板処理方法
JP3517808B2 (ja) 気相成長方法及び装置
CN116334589B (zh) 基片处理设备及处理方法
EP0378543B1 (en) Gas injector apparatus for chemical vapor deposition reactors
JPS60116126A (ja) プラズマｃｖｄ装置
JPS62158317A (ja) Ｃｖｄ装置用ガスノズル
JP2595744Y2 (ja) 半導体製造装置
JP3725325B2 (ja) 半導体製造方法ならびに半導体製造装置
JPH05198512A (ja) 光ｃｖｄ装置
JP2943407B2 (ja) 化学気相成長装置
JPH04279022A (ja) 半導体製造装置
JP3200396B2 (ja) 基板処理装置および成膜方法
JP3203259B2 (ja) 反応槽の内壁面への活性物質の付着防止方法及び装置
JP2005501429A (ja) ガス配送用の防護シールド及びシステム
CN217173860U (zh) 一种ald设备用分腔进气装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees