JPH0586677B2 - - Google Patents
Info
- Publication number
- JPH0586677B2 JPH0586677B2 JP58157975A JP15797583A JPH0586677B2 JP H0586677 B2 JPH0586677 B2 JP H0586677B2 JP 58157975 A JP58157975 A JP 58157975A JP 15797583 A JP15797583 A JP 15797583A JP H0586677 B2 JPH0586677 B2 JP H0586677B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solar cell
- sih
- film
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58157975A JPS6050972A (ja) | 1983-08-31 | 1983-08-31 | 薄膜太陽電池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58157975A JPS6050972A (ja) | 1983-08-31 | 1983-08-31 | 薄膜太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6050972A JPS6050972A (ja) | 1985-03-22 |
JPH0586677B2 true JPH0586677B2 (US07655688-20100202-C00086.png) | 1993-12-13 |
Family
ID=15661513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58157975A Granted JPS6050972A (ja) | 1983-08-31 | 1983-08-31 | 薄膜太陽電池 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6050972A (US07655688-20100202-C00086.png) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4692558A (en) * | 1983-05-11 | 1987-09-08 | Chronar Corporation | Counteraction of semiconductor impurity effects |
CA1321660C (en) * | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
JPH0799777B2 (ja) * | 1986-03-27 | 1995-10-25 | 住友電気工業株式会社 | 非晶質半導体素子 |
JPH0232569A (ja) * | 1988-07-22 | 1990-02-02 | Mitsubishi Electric Corp | アモルファス太陽電池 |
JP5219538B2 (ja) * | 2008-02-12 | 2013-06-26 | 大成建設株式会社 | 太陽光発電薄膜を基材に直接形成した太陽電池 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS564287A (en) * | 1979-06-18 | 1981-01-17 | Rca Corp | Amorphous silicon solar battery |
JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
-
1983
- 1983-08-31 JP JP58157975A patent/JPS6050972A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS564287A (en) * | 1979-06-18 | 1981-01-17 | Rca Corp | Amorphous silicon solar battery |
JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
Also Published As
Publication number | Publication date |
---|---|
JPS6050972A (ja) | 1985-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6975368B1 (ja) | 太陽電池及び太陽電池モジュール | |
US6121541A (en) | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys | |
KR910001742B1 (ko) | 광기전력 장치 | |
US6288325B1 (en) | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts | |
JP2740284B2 (ja) | 光起電力素子 | |
JP3490964B2 (ja) | 光起電力装置 | |
KR101000064B1 (ko) | 이종접합 태양전지 및 그 제조방법 | |
US6784361B2 (en) | Amorphous silicon photovoltaic devices | |
US10084107B2 (en) | Transparent conducting oxide for photovoltaic devices | |
US4782376A (en) | Photovoltaic device with increased open circuit voltage | |
US5091764A (en) | Semiconductor device having a transparent electrode and amorphous semiconductor layers | |
JPWO2005011002A1 (ja) | シリコン系薄膜太陽電池 | |
US4398054A (en) | Compensated amorphous silicon solar cell incorporating an insulating layer | |
KR20120070312A (ko) | 박막 태양전지 | |
JP2001267610A (ja) | 太陽電池 | |
JP2001267598A (ja) | 積層型太陽電池 | |
JPS58139478A (ja) | アモルフアス太陽電池 | |
CN108461554A (zh) | 全背接触式异质结太阳能电池及其制备方法 | |
JPH0586677B2 (US07655688-20100202-C00086.png) | ||
KR20110092706A (ko) | 실리콘 박막 태양전지 | |
JPH0125235B2 (US07655688-20100202-C00086.png) | ||
JPH0122991B2 (US07655688-20100202-C00086.png) | ||
JPH0463550B2 (US07655688-20100202-C00086.png) | ||
JPS6225275B2 (US07655688-20100202-C00086.png) | ||
WO2006049003A1 (ja) | 薄膜光電変換装置の製造方法 |