JPH0585516B2 - - Google Patents

Info

Publication number
JPH0585516B2
JPH0585516B2 JP32197488A JP32197488A JPH0585516B2 JP H0585516 B2 JPH0585516 B2 JP H0585516B2 JP 32197488 A JP32197488 A JP 32197488A JP 32197488 A JP32197488 A JP 32197488A JP H0585516 B2 JPH0585516 B2 JP H0585516B2
Authority
JP
Japan
Prior art keywords
shaft
pulling
single crystal
weight sensor
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32197488A
Other languages
Japanese (ja)
Other versions
JPH02167884A (en
Inventor
Yasuaki Shinomya
Yasunaka Shinohara
Kyoshi Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP32197488A priority Critical patent/JPH02167884A/en
Publication of JPH02167884A publication Critical patent/JPH02167884A/en
Publication of JPH0585516B2 publication Critical patent/JPH0585516B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はチヨコラルスキー法による単結晶育成
装置における引上回転軸の軸支機構の改善に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement of a shaft support mechanism for a pulling rotation shaft in a single crystal growth apparatus using the Czyochoralski method.

〔従来の技術〕[Conventional technology]

チヨコラルスキー法による単結晶育成方法は、
原料をルツボ中で熔融し、引上軸の先端に取付け
た種単結晶を該融液に接触させ、引上軸を回転し
ながら徐々に引上げて種結晶下に単結晶を大きく
成長させるというものであり、種々の材料の単結
晶育成に多用されている。
The single crystal growth method using the Czyochoralski method is
The raw material is melted in a crucible, a seed single crystal attached to the tip of a pulling shaft is brought into contact with the melt, and the single crystal is gradually pulled up while rotating the pulling shaft to grow a large single crystal under the seed crystal. It is widely used for growing single crystals of various materials.

近年このような単結晶育成において、歩留り向
上のために単結晶の直径を所望の寸法に制御する
必要から、重量センサーを用いる自動的育成方法
が一般的になりつつある。この重量センサーはル
ツボ中の原料の減少量を測定するように用いても
良いが、多くの場合引上回転軸に取付けて直接育
成結晶の重量を検出して単位時間当りの重量増加
量を測定するようにしている。この重量センサー
からの信号は直接予め設定された重量プログラム
と比較したり、直径に換算して予め設定された形
状プログラムと比較し、その差をルツボ加熱手段
にフイードバツクして重量又は形状を制御するの
である。
In recent years, in such single crystal growth, automatic growth methods using weight sensors have become common because it is necessary to control the diameter of the single crystal to a desired size in order to improve yield. This weight sensor can be used to measure the amount of loss of raw material in the crucible, but in many cases it is attached to the pulling rotation shaft to directly detect the weight of the grown crystal and measure the amount of weight increase per unit time. I try to do that. The signal from this weight sensor is directly compared with a preset weight program, or converted into diameter and compared with a preset shape program, and the difference is fed back to the crucible heating means to control the weight or shape. It is.

ところで重量センサーを引上回転軸に取付ける
場合、引上軸を通常の方法で軸支すると接触等に
より重量信号にノイズが入るため、引上軸を中間
支持のない状態で回転させており、このため引上
軸のふらつきが避けられない。又、大気中で育成
可能な結晶であれば問題とならないが、雰囲気を
調整しなければならない結晶の育成に当たつては
育成部を覆うチヤンバーと引上軸のシールが不完
全とならざるを得ず、育成条件が不安定になる原
因の一つになつている。
By the way, when attaching a weight sensor to a lifting rotation shaft, if the lifting shaft is supported in the usual way, noise will be introduced into the weight signal due to contact, etc., so the pulling shaft is rotated without intermediate support. Therefore, wobbling of the pulling shaft is unavoidable. In addition, this is not a problem if the crystal can be grown in the atmosphere, but when growing crystals that require adjusting the atmosphere, the seal between the chamber covering the growth area and the pulling shaft may be incomplete. This is one of the reasons why the growing conditions become unstable.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

本発明の目的は、引上軸のふらつきを効果的に
防止でき、チヤンバーと外気との遮断を完全にで
き、にもかかわらず精度の高い結晶重量の測定が
可能な単結晶育成装置を提供することにある。
An object of the present invention is to provide a single crystal growth apparatus that can effectively prevent the wobbling of the pulling shaft, completely isolate the chamber from the outside air, and still be able to measure the crystal weight with high accuracy. There is a particular thing.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するため本発明は、引上回転軸
を引上軸と該引上軸を収容する中空回転軸からな
る2重構造とし、該中空回転軸上部に重量センサ
ーを取付け、該重量センサーに引上軸を吊り下
げ、引上軸は中空回転軸内に設けたリニアボール
ベアリングで支承するようにし、該中空回転軸が
単結晶育成部を覆うチヤンバー内に貫入する部分
でラジアルベアリングとスラストベアリングを組
合せた軸受で支承するようにした点に特徴があ
る。
In order to achieve the above object, the present invention provides a pulling rotating shaft with a double structure consisting of a pulling shaft and a hollow rotating shaft that accommodates the pulling shaft, a weight sensor is attached to the upper part of the hollow rotating shaft, and the weight sensor is mounted on the upper part of the hollow rotating shaft. The pulling shaft is suspended from the shaft, and the pulling shaft is supported by a linear ball bearing provided inside the hollow rotating shaft, and the radial bearing and thrust are connected at the part where the hollow rotating shaft penetrates into the chamber covering the single crystal growth area. It is unique in that it is supported by a combination of bearings.

〔実施例〕〔Example〕

第1図は本発明の単結晶育成装置の要部を概念
的に示す図で、一部を切欠いて且つ局部的に断面
図で示してある。チヤンバー1内には図示しない
ルツボ、ルツボ加熱手段及びルツボ保温手段等が
収容されており、該チヤンバー1に貫入された引
上回転軸2は図示しない支柱に設けられた駆動機
構により昇降するステージ3に設けられ、同様に
該ステージ3に設けられた電動機付減速機4と駆
動ギア5及び6を介して連結されている。
FIG. 1 is a diagram conceptually showing the main parts of the single crystal growth apparatus of the present invention, with some parts cut away and locally shown in cross-section. A crucible, a crucible heating means, a crucible heat retaining means, etc. (not shown) are housed in the chamber 1, and a pulling rotation shaft 2 penetrated into the chamber 1 is moved up and down by a stage 3 that is moved up and down by a drive mechanism provided on a support (not shown). The stage 3 is connected to a motorized reduction gear 4 similarly provided on the stage 3 via drive gears 5 and 6.

上記引上回転軸2は内部が中空の回転軸7と該
中空回転軸7内に収容された引上軸8との2重構
造となつており、該中空回転軸7の上蓋9に重量
センサー10が取付けられ、該重量センサー10
に上記引上軸8が吊り下げられ、引上軸8は中空
回転軸7内に設けたリニアボールベアリング11
a,11b,11cで支承されている。そしてこ
の引上回転軸2はステージ軸受12を介してステ
ージ3に取付けられ、一方引上回転軸2がチヤン
バー1に貫入する部分はスラストベアリング13
とラジアルベアリング14とを組合わせた軸受1
5で支承されている。
The above-mentioned lifting rotation shaft 2 has a double structure of a rotation shaft 7 having a hollow interior and a pulling shaft 8 housed in the hollow rotation shaft 7, and a weight sensor is attached to the upper cover 9 of the hollow rotation shaft 7. 10 is attached, the weight sensor 10
The above-mentioned pulling shaft 8 is suspended from the shaft, and the pulling shaft 8 is mounted on a linear ball bearing 11 provided inside the hollow rotating shaft 7.
It is supported by a, 11b, and 11c. The lifting rotation shaft 2 is attached to the stage 3 via a stage bearing 12, while the portion where the lifting rotation shaft 2 penetrates into the chamber 1 is attached to a thrust bearing 13.
and a radial bearing 14.
It is supported by 5.

〔作用〕[Effect]

上記のような構造によると引上軸8はリニアボ
ールベアリング11a,11b,11cで支承さ
れ且つ組合せ軸受15でガイドされた中空回転軸
7に保護されてチヤンバー1内へ貫入するので、
ふらつきを効果的に防止できる。しかも引上軸8
は中空回転軸7に対して静止しており、上記リニ
アボールベアリング11の作動方向が単結晶荷重
の方向と一致しているため単結晶荷重を抵抗なく
忠実に重量センサー10へ伝えることができる。
According to the above structure, the pulling shaft 8 penetrates into the chamber 1 while being protected by the hollow rotary shaft 7 supported by linear ball bearings 11a, 11b, and 11c and guided by a combination bearing 15.
It can effectively prevent wobbling. Moreover, the pulling shaft 8
is stationary with respect to the hollow rotating shaft 7, and since the operating direction of the linear ball bearing 11 coincides with the direction of the single crystal load, the single crystal load can be faithfully transmitted to the weight sensor 10 without resistance.

このようにして本発明の装置は引上軸のふらつ
きを防止し、にもかかわらず精度の高い結晶重量
の測定が可能となるのであるが、この構造はまた
チヤンバーと外気との遮断を完全にするためにも
好適である。そのような目的のためには引上回転
軸2の上部を密封カバー16で覆うと共にステー
ジシール17とチヤンバー口シール18を設ける
のみで良い。また密封カバー16にチヤンバー1
内に用いるガスと同じガスを導入口19から流入
し、圧力をチヤンバー1の内圧と等しくすれば中
空回転軸7内をガスが移動することも防止でき
る。
In this way, the device of the present invention prevents the pulling shaft from wobbling, making it possible to measure the crystal weight with high accuracy, but this structure also completely isolates the chamber from the outside air. It is also suitable for For such purpose, it is only necessary to cover the upper part of the pulling rotation shaft 2 with a sealing cover 16 and to provide a stage seal 17 and a chamber mouth seal 18. Also, the chamber 1 is attached to the sealing cover 16.
If the same gas used inside the chamber 1 is introduced from the inlet 19 and the pressure is made equal to the internal pressure of the chamber 1, it is possible to prevent the gas from moving inside the hollow rotary shaft 7.

重量センサー10の電気信号は信号線20、ス
リツプリング21、スリツプリング信号線22及
びコネクター23を介して図示しないデータ処理
装置、コンピユータ等に入力され、フイードバツ
ク信号がとり出される。
The electrical signal from the weight sensor 10 is inputted to a data processing device, computer, etc. (not shown) via a signal line 20, a slip ring 21, a slip ring signal line 22, and a connector 23, and a feedback signal is extracted.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば引上軸のふら
つきが完全に抑制され、チヤンバーと外気との遮
断も完全に行うことができ、それにもかかわらず
精度の高い結晶重量の測定ができるという、極め
て優れた効果を奏する。
As described above, according to the present invention, the fluctuation of the pulling shaft can be completely suppressed, the chamber can be completely isolated from the outside air, and the crystal weight can be measured with high accuracy. It has extremely good effects.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の単結晶育成装置の要部を概念
的に示す図であるあ。 1……チヤンバー、3……ステージ、7……中
空回転軸、8……引上軸、10……重量センサ
ー、11……リニアボールベアリング、13……
スラストベアリング、14……ラジアルベアリン
グ。
FIG. 1 is a diagram conceptually showing the main parts of the single crystal growth apparatus of the present invention. 1... Chamber, 3... Stage, 7... Hollow rotating shaft, 8... Pulling shaft, 10... Weight sensor, 11... Linear ball bearing, 13...
Thrust bearing, 14...Radial bearing.

Claims (1)

【特許請求の範囲】[Claims] 1 引上回転軸に重量センサーが取り付けられた
重量検出型自動単結晶育成装置において、引上回
転軸が引上軸と該引上軸を収納する中空回転軸か
らなる2重構造とされ、該中空回転軸上部に重量
センサーが取付けられ、該重量センサーに引上軸
が吊り下げられ、引上軸は中空回転軸内に設けら
れたリニアボールベアリングで支承され、該中空
回転軸は単結晶育成部を覆うチヤンバー内に貫入
する部分でラジアルベアリングとスラストベアリ
ングを組合わせた軸受で支承されていることを特
徴とする単結晶育成装置。
1 In a weight detection type automatic single crystal growth apparatus in which a weight sensor is attached to the pulling rotation shaft, the pulling rotation shaft has a double structure consisting of a pulling shaft and a hollow rotation shaft that houses the pulling shaft, and A weight sensor is attached to the upper part of the hollow rotating shaft, a pulling shaft is suspended from the weight sensor, the pulling shaft is supported by a linear ball bearing provided in the hollow rotating shaft, and the hollow rotating shaft is used for single crystal growth. A single crystal growth apparatus characterized in that the part that penetrates into the chamber that covers the part is supported by a bearing that is a combination of a radial bearing and a thrust bearing.
JP32197488A 1988-12-22 1988-12-22 Growth device of single crystal Granted JPH02167884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32197488A JPH02167884A (en) 1988-12-22 1988-12-22 Growth device of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32197488A JPH02167884A (en) 1988-12-22 1988-12-22 Growth device of single crystal

Publications (2)

Publication Number Publication Date
JPH02167884A JPH02167884A (en) 1990-06-28
JPH0585516B2 true JPH0585516B2 (en) 1993-12-07

Family

ID=18138507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32197488A Granted JPH02167884A (en) 1988-12-22 1988-12-22 Growth device of single crystal

Country Status (1)

Country Link
JP (1) JPH02167884A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2519626B2 (en) * 1992-04-16 1996-07-31 株式会社伸精機 Crystal growth equipment
CN102534760A (en) * 2011-12-28 2012-07-04 苏州优晶光电科技有限公司 Device for monitoring crystal growth
CN110344108A (en) * 2019-08-21 2019-10-18 眉山博雅新材料有限公司 Upper lifting vacuum drying oven

Also Published As

Publication number Publication date
JPH02167884A (en) 1990-06-28

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