JPH0583025B2 - - Google Patents
Info
- Publication number
- JPH0583025B2 JPH0583025B2 JP60249050A JP24905085A JPH0583025B2 JP H0583025 B2 JPH0583025 B2 JP H0583025B2 JP 60249050 A JP60249050 A JP 60249050A JP 24905085 A JP24905085 A JP 24905085A JP H0583025 B2 JPH0583025 B2 JP H0583025B2
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- light
- substrate
- reading device
- optical waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/70—Energy storage systems for electromobility, e.g. batteries
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、フアクシミリや複写機などの原稿の
読み取りに使用されている完全密着型イメージセ
ンサ読み取り装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a fully contact image sensor reading device used for reading originals in facsimile machines, copying machines, and the like.
（従来の技術）
近年フアクシミリや複写機などに代表される
OA機器の進歩は目覚ましく、各種OA機器の画
像入力装置の小型軽量化や高性能化を計るため
に、密着型イメージセンサ読み取り装置が開発さ
れて広範囲に利用されている。従来のフアクシミ
リなどの読み取りに使用されている密着型イメー
ジセンサ読み取り装置の構成を、第３図および第
４図を参照して説明する。(Conventional technology) In recent years, it has been typified by facsimile machines and copying machines.
Advances in office automation equipment are remarkable, and close-contact image sensor reading devices have been developed and widely used to make the image input devices of various office equipment smaller, lighter, and more efficient. The configuration of a conventional contact image sensor reading device used for reading facsimiles will be described with reference to FIGS. 3 and 4.
第３図は、従来のフアクシミリなどの原稿読み
取りに使用されている密着型イメージセンサ読み
取り装置の構成の断面図を示し、原稿１を蛍光灯
などの光源２で均一に照射３し、原稿１からの反
射光をセルフオニツクレンズ（光集束性フアイバ
レンズ）４を通して、基板５に配列したイメージ
センサ６に結像させて電気信号に変換する。（例
えば、由上登、他：画像電子学会予稿、83−04、
1983参照）
第４図は、従来の完全密着型イメージセンサ読
み取り装置の構成の断面図を示し、イメージセン
サ６を配列した透明の基板５を通して原稿１に照
射３し、原稿１からの反射光をイメージセンサ６
に入射して、原稿１の情報に対応した電気信号に
変換する。〔Yamamoto et al：JJAP
Vol.17Supplement，17−１（1978）135や、田尻
哲男他：昭和55年度電子通信学会総合全国大会予
稿975あるいは、山本英明他：昭和59年電気四学
会連合大会予稿、３−110参照〕
（発明が解決しようとする問題点）
前記のように、従来の完全密着型イメージセン
サ読み取り装置の構造では、照明光をイメージセ
ンサの背面から斜照射させなければならないの
で、８ドツト／mm以上の解像度を有するイメージ
センサの場合は、照明効率やMTFの低下を生じ、
また、イメージセンサに電荷結合素子（以下
CCDと省略する）イメージセンサやバイポーラ
ICイメージセンサなどの結晶タイプを用いると、
照明効率やMTFが極端に低下するという問題点
があつた。 FIG. 3 shows a cross-sectional view of the structure of a contact image sensor reading device used for reading documents such as conventional facsimile machines. The reflected light is passed through a self-onic lens (light-focusing fiber lens) 4, focused on an image sensor 6 arranged on a substrate 5, and converted into an electrical signal. (For example, Yukami Noboru, et al.: Proceedings of the Institute of Image Electronics Engineers, 83-04,
1983) FIG. 4 shows a cross-sectional view of the configuration of a conventional fully contact image sensor reading device, in which light is irradiated onto an original 1 through a transparent substrate 5 on which image sensors 6 are arranged, and light reflected from the original 1 is emitted. Image sensor 6
is input into the original document 1 and converted into an electrical signal corresponding to the information on the original document 1. [Yamamoto et al: JJAP
See Vol. 17 Supplement, 17-1 (1978) 135, Tetsuo Tajiri et al.: Proceedings of the 1985 National Conference of the Institute of Electronics and Communication Engineers, 975, or Hideaki Yamamoto et al.: Proceedings of the 1981 Joint Conference of the Four Electrical Engineers of Japan, 3-110] Problems to be Solved by the Invention) As mentioned above, in the structure of the conventional fully contact image sensor reading device, illumination light must be irradiated obliquely from the back of the image sensor, so it is difficult to obtain a resolution of 8 dots/mm or more. In the case of image sensors with
In addition, charge-coupled devices (hereinafter referred to as
(abbreviated as CCD) image sensor or bipolar
When using a crystal type such as an IC image sensor,
There was a problem that lighting efficiency and MTF were extremely reduced.
また、イメージセンサは原稿と接触対向してい
るので、原稿との摩擦により、イメージセンサに
ダメージを与えられ、機械的強度が不安定になる
という問題点があつた。 Furthermore, since the image sensor is in contact with and faces the original, there is a problem in that the image sensor is damaged by friction with the original and its mechanical strength becomes unstable.
（問題点を解決するための手段）
前記問題点を解決するため、本発明は、基板に
配列されたイメージセンサ上に１個以上の照明入
射用開口部と、１個以上の原稿照射用開口部を有
するとともに、光遮断膜で覆われた透光性薄膜
（以下光遮断膜と透光性薄膜を総称して光導波路
と呼ぶ）を備えた保護用透光性基板でイメージセ
ンサを気密封止した完全密着型イメージセンサ読
み取り装置を提供するものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides one or more openings for illumination incidence and one or more openings for illuminating documents on an image sensor arranged on a substrate. The image sensor is hermetically sealed with a protective transparent substrate that has a light-transmitting thin film covered with a light-blocking film (hereinafter, the light-blocking film and the light-transmitting thin film are collectively referred to as an optical waveguide). The present invention provides a complete contact type image sensor reading device that is completely fixed.
なお、本発明には、CCDイメージセンサやバ
イポーラICイメージセンサなどの結晶タイプの
イメージセンサを使用することができる。 Note that a crystal type image sensor such as a CCD image sensor or a bipolar IC image sensor can be used in the present invention.
（作 用）
前記構成により、保護用透光性基板から原稿に
光を照射するため、高解像度の読み取りをするこ
とができ、イメージセンサは、機械的安定度にす
ぐれるとともに、電気的特性の劣化が無い。(Function) With the above configuration, since light is irradiated onto the document from the protective translucent substrate, high-resolution reading can be performed, and the image sensor has excellent mechanical stability and low electrical characteristics. No deterioration.
（実施例）
本発明の実施例を、第１図および第２図を参照
して説明する。(Example) An example of the present invention will be described with reference to FIGS. 1 and 2.
第１図は、本発明の完全密着型イメージセンサ
読み取り装置の第１の実施例の構成断面図を示
し、基板５の上にイメージセンサ６が配列固定さ
れている。基板５の材料としては、ガラス基板、
石英基板、サフアイヤ基板などの透光性基板が用
いられているが、アルミナ基板、アルミニウム基
板、ステンレス基板などを用いてもよい。また、
イメージセンサ６の種としては、ａ−Si，Poli−
Si，CdS−CdSeなどの薄膜タイプ、あるいは
CCD、バイポーラICなどの結晶タイプがある。
次に、光遮断膜７ａ，７ｂおよび透光性薄膜７ｃ
からなる光導波路７を付けた保護用透光性基板８
を、光導波路７の面がイメージセンサ６に向くよ
うにして、基板５と接着させて気密封止を行な
う。 FIG. 1 shows a cross-sectional view of the structure of a first embodiment of a complete contact type image sensor reading device of the present invention, in which image sensors 6 are arranged and fixed on a substrate 5. As shown in FIG. Materials for the substrate 5 include a glass substrate,
A translucent substrate such as a quartz substrate or a sapphire substrate is used, but an alumina substrate, an aluminum substrate, a stainless steel substrate, or the like may also be used. Also,
The seeds of the image sensor 6 include a-Si, Poli-
Thin film type such as Si, CdS-CdSe, or
There are crystal types such as CCD and bipolar IC.
Next, the light blocking films 7a, 7b and the transparent thin film 7c
A protective transparent substrate 8 with an optical waveguide 7 made of
is adhered to the substrate 5 with the surface of the optical waveguide 7 facing the image sensor 6 to perform airtight sealing.
保護用透光性基板８に光導波路７を読み取り付
けるためには、ガラス基板、石英基板またはサフ
アイヤ基板からなる保護用透光性基板８の上に、
EB法、DCスパツタリング法、抵抗加熱法または
メツキ法などの薄膜形成技術を用いて、Al，
Mo，Cr，Ag，AuまたはTiなどの光遮断膜７ａ
を0.1〜20μm成形する。その後、フオトリソグラ
フ技術を用いて任意のパターニングを行なう。次
に、光遮断膜７ａ上にRFスパツタリング法、EB
法、CVD法を用いて、ガラス、SiO2，Al2O3，
TiO2，ZnS，MgF2などの透光性薄膜７ｃを0.1〜
20μm形成する。透光性薄膜７ｃの上および側面
に光遮断膜７ｂを、光遮断膜７ａと同様の薄膜形
成方法で、Al，Mo，Cr，Ag，AuまたはTiなど
を0.1〜20μm形成し、フオトリソグラフ技術を用
いて任意のパターニングを行なう。前記方法によ
り完全密着型イメージセンサができる。前記構成
において、螢光灯、LED、ハロゲンランプなど
を用いた光源２から光導波路７に光を照射３する
と、光導波路内に入つた光は、反射を繰り返しな
がら、光導波路７の口を通つて原稿１の面に照射
され、原稿１の情報に応じた光が反射され、前記
反射がイメージセンサ６に入射されて電気信号に
変換される。 In order to read and attach the optical waveguide 7 to the protective transparent substrate 8, on the protective transparent substrate 8 made of a glass substrate, a quartz substrate, or a sapphire substrate,
Al,
Light blocking film 7a such as Mo, Cr, Ag, Au or Ti
Molded to a thickness of 0.1 to 20 μm. After that, arbitrary patterning is performed using photolithography technology. Next, the RF sputtering method, EB
glass, SiO 2 , Al 2 O 3 ,
Transparent thin film 7c of TiO 2 , ZnS, MgF 2 etc. from 0.1 to
Form 20μm. A light blocking film 7b is formed on the top and side surfaces of the light-transmitting thin film 7c using the same thin film forming method as the light blocking film 7a, and is made of Al, Mo, Cr, Ag, Au, or Ti to a thickness of 0.1 to 20 μm. Perform arbitrary patterning using . A completely contact type image sensor can be obtained by the above method. In the above configuration, when light is irradiated 3 onto the optical waveguide 7 from the light source 2 using a fluorescent lamp, LED, halogen lamp, etc., the light that has entered the optical waveguide passes through the opening of the optical waveguide 7 while being repeatedly reflected. The light is then irradiated onto the surface of the original 1, and the light corresponding to the information on the original 1 is reflected.The reflected light is incident on the image sensor 6 and converted into an electrical signal.
第２図は、本発明の第２の実施例の構成断面図
を示し、ポリイミド基板のようなフレキシブルの
基板９の上に光導波路７と同じ方法で光導波路１
０を形成し、光導波路７と光学的に接続すると、
外部から光を導入することができる。前記構成に
よれば、光源としては外部光を利用することがで
きるので、読み取り装置としての専用光源が不要
となる。 FIG. 2 shows a cross-sectional view of the configuration of a second embodiment of the present invention, in which an optical waveguide 1 is formed on a flexible substrate 9 such as a polyimide substrate in the same manner as the optical waveguide 7.
0 is formed and optically connected to the optical waveguide 7,
Light can be introduced from outside. According to the above configuration, since external light can be used as a light source, a dedicated light source as a reading device is not required.
また、前記第１および第２の実施例において、
光を均一に原稿１面に照射するために、透光性薄
膜７ｃの表面をアルミナ粉などの研磨材で研磨し
たり、あるいはフツ酸系のエツチング液でエツチ
ングして、50〜5000Åの凹凸をつけて、光の散乱
を多くする方法も効果的である。 Furthermore, in the first and second embodiments,
In order to uniformly irradiate the entire surface of the document with light, the surface of the transparent thin film 7c is polished with an abrasive material such as alumina powder, or etched with a hydrofluoric acid-based etching solution to create unevenness of 50 to 5000 Å. Another effective method is to add more light to the screen to increase the scattering of light.
（発明の効果）
前記のように、本発明によれば、保護用透光性
基板に光導波路を一体化してイメージセンサを気
密封止するため、機械的安定性が良くなり、イメ
ージセンサの電気的劣化が無く、高解像度の読み
取りが可能となるという効果がある。また、結晶
タイプのイメージセンサの使用も可能となり、高
性能の完全密着型イメージセンサ読み取り装置が
得られるとともに、光源が任意の場所に置けるの
で小型になるという効果がある。(Effects of the Invention) As described above, according to the present invention, the optical waveguide is integrated with the protective transparent substrate and the image sensor is hermetically sealed, so the mechanical stability is improved and the electrical resistance of the image sensor is improved. This has the effect that there is no deterioration of the image quality and high resolution reading is possible. Furthermore, it becomes possible to use a crystal type image sensor, resulting in a high-performance, fully contact type image sensor reading device, and also has the effect of being compact because the light source can be placed at any location.
第１図は本発明の第１の実施例の構成断面図、
第２図は本発明の第２の実施例の構成断面図、第
３図は従来の密着型イメージセンサ読み取り装置
の構成の断面図、第４図は従来の完全密着型イメ
ージセンサ読み取り装置の構成断面図を示す。
１……原稿、２……光源、３……照射、４……
セルフオニツクレンズ、５……基板、６……イメ
ージセンサ、７，１０……光導波路、７ａ，７
ｂ，１０ａ，１０ｂ……光遮断膜、７ｃ，１０ｃ
……透光性薄膜、８……保護用透光性基板、９…
…フレキシブルの基板。
FIG. 1 is a cross-sectional view of the structure of the first embodiment of the present invention;
FIG. 2 is a sectional view of the configuration of a second embodiment of the present invention, FIG. 3 is a sectional view of the configuration of a conventional contact type image sensor reading device, and FIG. 4 is a configuration of a conventional fully contact type image sensor reading device. A cross-sectional view is shown. 1...Original, 2...Light source, 3...Irradiation, 4...
Self-on lens, 5... Substrate, 6... Image sensor, 7, 10... Optical waveguide, 7a, 7
b, 10a, 10b...light blocking film, 7c, 10c
...Transparent thin film, 8...Transparent substrate for protection, 9...
...Flexible circuit board.
Claims (1)
イメージセンサを保護封止する保護用透光性基板
とかなる完全密着型イメージセンサ読み取り装置
において、前記保護用透光性基板上に１個以上の
照明入射用開口部と１個以上の原稿照射用開口部
を有するとともに、光遮断膜で覆われた透光性薄
膜からなる光導波路を備え、前記光導波路の面を
前記イメージセンサ側に向けて配置し、イメージ
センサを気密封止したことを特徴とする完全密着
型イメージセンサ読み取り装置。 ２ 透光性薄膜の表面を50〜5000Å凹凸にするこ
とを特徴とする特許請求の範囲第１項記載の完全
密着型イメージセンサ読み取り装置。[Scope of Claims] 1. In a complete contact type image sensor reading device consisting of image sensors arranged on a substrate and a protective transparent substrate that protects and seals the image sensor, the image sensor is arranged on the protective transparent substrate. has one or more openings for illumination incidence and one or more openings for document irradiation, and is provided with an optical waveguide made of a transparent thin film covered with a light blocking film, and the surface of the optical waveguide is provided with the image A completely contact image sensor reading device characterized by being placed facing the sensor side and hermetically sealing the image sensor. 2. The complete contact type image sensor reading device according to claim 1, wherein the surface of the light-transmitting thin film has an unevenness of 50 to 5000 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249050A JPS62110358A (en) | 1985-11-08 | 1985-11-08 | Perfect contact type image sensor reading device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60249050A JPS62110358A (en) | 1985-11-08 | 1985-11-08 | Perfect contact type image sensor reading device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62110358A JPS62110358A (en) | 1987-05-21 |
| JPH0583025B2 true JPH0583025B2 (en) | 1993-11-24 |
Family
ID=17187266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60249050A Granted JPS62110358A (en) | 1985-11-08 | 1985-11-08 | Perfect contact type image sensor reading device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62110358A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07279142A (en) * | 1994-04-08 | 1995-10-24 | Yokichi Shinohara | Manufacture of sandbag, and device therefor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7333052B2 (en) * | 2019-06-21 | 2023-08-24 | 学校法人立命館 | light sensor |
-
1985
- 1985-11-08 JP JP60249050A patent/JPS62110358A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07279142A (en) * | 1994-04-08 | 1995-10-24 | Yokichi Shinohara | Manufacture of sandbag, and device therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62110358A (en) | 1987-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI270200B (en) | Solid-state imaging device, semiconductor wafer and camera module | |
| US6462866B1 (en) | Imaging optical system and original reading apparatus | |
| JPH0583025B2 (en) | ||
| JPS5846181B2 (en) | Close-contact image sensor | |
| JPH0250566A (en) | N-magnified optical sensor | |
| JPS6394671A (en) | Optical scanning type image scanner | |
| JPS62248253A (en) | Complete close adhesion type image sensor reader | |
| JPS61188964A (en) | Contact type image sensor | |
| JPS59148372A (en) | Photosensitive device | |
| JPS5962267A (en) | Contact type reader | |
| JPS58127463A (en) | Close contact type image sensor | |
| JPS60134486A (en) | Photoelectric conversion device | |
| JPS61135272A (en) | Linear image sensor | |
| JP2637946B2 (en) | Direct reading type line image sensor | |
| JPS60115259A (en) | Photoelectric conversion device and manufacture thereof | |
| JPS6236962A (en) | Contact type image sensor | |
| JPS63124460A (en) | Complete contact type image sensor | |
| JPS61161758A (en) | Direct reading type image sensor | |
| JPS62203462A (en) | Color original reader | |
| JPH039659A (en) | Image reader | |
| JPH01290258A (en) | Close contact type equi-multiplying sensor | |
| JPS59131263A (en) | Image pickup device | |
| JPH0448781A (en) | Image sensor integrated with light source and its manufacture | |
| JPH0360155A (en) | Perfectly close contact type image sensor | |
| JPH06233055A (en) | Complete contact image sensor |