JPH0581669B2 - - Google Patents
Info
- Publication number
- JPH0581669B2 JPH0581669B2 JP27018086A JP27018086A JPH0581669B2 JP H0581669 B2 JPH0581669 B2 JP H0581669B2 JP 27018086 A JP27018086 A JP 27018086A JP 27018086 A JP27018086 A JP 27018086A JP H0581669 B2 JPH0581669 B2 JP H0581669B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous
- alloy
- target
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 24
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000013076 target substance Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 description 23
- 239000000956 alloy Substances 0.000 description 23
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910008423 Si—B Inorganic materials 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010791 quenching Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
（産業上の利用分野）
本発明は高い結晶化温度を有するTa系非晶質
合金の製造方法に関するものである。
（従来の技術）
近年、各種の非晶質材料が開発され、金属材料
の分野において、多くの注目を集めている。これ
らの合金は、従来の結晶合金とは異なり、結晶構
造を持たない合金であり、その性質も従来の金属
材料にはみられないものが多く、機械的性質、耐
摩耗性、耐食性、軟磁性、電気的性質などに優れ
ているため、結晶質金属に代わりうる材料とし
て、各種の用途開発が行われ、さらに、その用途
に適した材料開発も行われている。これらの合金
は、従来、一般に、単ロール法等の液体急冷法に
よつて作製されている。
（発明が解決しようとする問題点）
非晶質合金の最大の問題点は、熱的に不安定な
点にある。これは非晶質状態が熱力学的に非平衝
な準安定状態であるということに由来するもの
で、非晶質合金の宿命ともいえることである。即
ち、非晶質合金は、一般に、それぞれ特有の結晶
化温度を有し、その温度を越えるとより熱的に安
定な結晶合金に変化してしまい、非晶質状態のと
きにみられた優れた諸特性が全て失われてしまう
のである。この結晶化温度は、材料によつて異な
るが、一般に、絶対温度で測定した融点の0.4〜
0.6倍程度の値をとることが知られている。従つ
て、結晶化温度の高い合金を得るためには、融点
の高い合金を非晶質化しなければならない。
Ta−Si−Ｂ合金は、融点が約2300℃以上とき
わめて高い。このため液体急冷法によつて作製さ
れたTa−Si−Ｂ系非晶質合金は、その結晶化温
度が800℃〜1000℃と非常に高く、非晶質合金の
問題点を大幅に改善することが可能となつた（特
願昭61−012385号）。さらに、このTa−Si−Ｂ系
非晶質合金は、一般の非晶質合金に特有の高強
度、高硬度などの優れた機械的性質を有している
ために、例えば、耐摩耗性材料、および、温度上
昇を伴う電極用材料などへの応用が考えられる。
しかしながら、液体急冷法によつて作製される
Ta−Si−Ｂ系非晶質合金は、その形状が幅数mm
〜数cmのリボン状であるために、広い面積を有す
る非晶質合金を得ることができないという問題点
があつた。さらに、ある物質の上に、前記非晶質
合金を薄膜状で形成することも、従来の液体急冷
法ではできなかつた。
本発明は、このような従来技術の問題点を解決
して、結晶化温度を有し、かつ、機械的特性、耐
食性等にすぐれたTa−Ｗ系非晶質合金薄膜の製
造方法を提供することを目的とする。
（問題点を解決するための手段）
本発明は、Tal−ｘ（Sil−yBy）ｘなる式で表
され、ｘ＝0.1〜0.4、ｙ＝0.01〜0.99である合金
を、ターゲツト物質にイオンを衝突させ、前記タ
ーゲツト物質をガス状態で飛び出させることによ
り、基板上に薄膜を形成することによつて、非晶
質化することを特徴とするTa系非晶質合金薄膜
の製造方法である。
（作用）
Ta−Si−Ｂ系合金では、後に実施例で示すよ
うに、Taが60at％〜90at％の組成範囲で、非晶
質合金ができることを本発明者が見いだした。こ
の組成範囲をはずれると非晶質構造がほとんどみ
られなくなり、非晶質合金に特徴的な優れた特性
がすべて消失してしまう。また、ｙの範囲を0.01
〜0.99と限定したのは、この範囲に於てて、Siま
たはＢを微量添加した場合や、いずれか一方だけ
を添加した場合よりも結晶化温度が高くなるから
である。
これらの非晶質合金の結晶化温度は、その融点
の高さに対応して、いずれも800℃以上という高
い値である。また、これらの非晶質合金の機械的
特性は、非晶質合金に一般にみられるように、高
強度かつ高硬度である。また、耐食性において
も、Taのすぐれた耐食性に匹敵するほどの耐食
性を有している。
本発明による製造方法は、アルゴンガス等の気
体原子または分子を高電界または高周波電界中で
イオン化し、さらに電界によつて加速することに
より、ターゲツト表面に衝突させて、ターゲツト
物質をターゲツト表面からたたき出して、基板上
に薄膜を形成するため、大面積で、かつ、均質な
合金薄膜を形成することが出来る。
また、ターゲツト物質としては、目的組成の
Ta−Si−Ｂ三元系合金、あるいは、TaとSiおよ
びＢを適当な面積比で組み合わせた複合物質を利
用する。このため、得られる合金薄膜の組成は、
ターゲツト合金の組成を変化させることにより、
また、複合物質の面積比を適当に変化させること
により、容易に変化させることが出来るため、目
的とする組成の非晶質合金薄膜を容易に得ること
ができる。
（実施例）
以下、本発明の一実施例を図により詳細に説明
する。第１図に、本発明のTa系非晶質合金薄膜
を作製する装置の一例を示す。第１図に示す装置
は高周波二極マグネトロンスパツタ装置であり、
図において、１はターゲツト、２は基板である。
ターゲツト１は本実施例において、複合ターゲツ
トを用いた。即ち、直径100mm、厚さ５mmのTaタ
ーゲツトのうえに、一辺10mmの正方形で厚さ１mm
のSiおよびＢの板を適当な枚数だけおいた。この
際、Taターゲツトの上に、SiおよびＢの板が、
なるべく均一に分布するように設定した。Siおよ
びＢの枚数を変化させることにより、得られる合
金薄膜の組成を変化させた。基板２には、長さ50
mm、幅25mmで厚さ0.2mmのガラスを用いた。
薄膜作製に際しては、最初にバルブ５を開い
て、真空チヤンバー３を真空ポンプ４によつて、
10-7Torrの真空まで排気する。この後、バリア
ブルリークバルブ６を開いて、アルゴンガス導入
管７よりアルゴンガスを10-3Torr台になるまで
導入する。この状態で高周波電源８の電源を入れ
ることにより、スパツタを開始させる。投入電力
は500Wとした。このとき、ターゲツト１は、冷
却水導入管１０によつて水冷されている。また、
基板２は、液体窒素導入管１１によつて導入され
た液体窒素１２によつて、室温以下に冷却されて
いる。これは、Ta系合金薄膜を非晶質化するた
めには、水、液体窒素等の冷媒で基板を冷却する
必要があるためである。基板温度を熱電対１４を
通して、温度計１５によつて測定すると、−180℃
まで冷却されていることがわかつた。スパツタの
最初の１時間は、シヤツター９を閉じて、プレス
パツタを行つた。本スパツタ装置は、ターゲツト
の裏側に、永久磁石１３が取り付けられており、
これがターゲツト表面に作る磁場によつて、高速
スパツタが行えるようになつている。プレスパツ
タ終了後、シヤツター９を開いて、基板上に薄膜
を作製した。薄膜作製は、１時間行つた。得られ
た薄膜の厚さは、5μm程度であつた。
得られたTa−Si−Ｂ合金薄膜の構造をＸ線回
析法によつて評価した。その膜も結晶による鋭い
回析ピークはみられず、ブロードなハローパター
ンが得られたことから、非晶質合金薄膜が得られ
たことが確認された。第１表に、示差熱分析で測
定したこれらの試料の結晶化温度を示す。いずれ
も800℃以上の高い結晶化温度を示している。こ
れらの試料の機械的特性は、ビツカース硬度が
800〜1500の範囲であるという優れた性質を示し
た。さらに、これらの試料は濃塩酸、濃硝酸、濃
硫酸、濃王水の中に一日放置しても何ら腐食され
た様子は見られず、重量変化も認められなかつ
た。
(Industrial Application Field) The present invention relates to a method for producing a Ta-based amorphous alloy having a high crystallization temperature. (Prior Art) In recent years, various amorphous materials have been developed and are attracting a lot of attention in the field of metal materials. Unlike conventional crystalline alloys, these alloys do not have a crystalline structure, and many of their properties are not found in conventional metal materials, such as mechanical properties, wear resistance, corrosion resistance, and soft magnetism. Due to its excellent electrical properties, various uses are being developed as a material that can replace crystalline metals, and materials suitable for these uses are also being developed. These alloys have conventionally been generally produced by a liquid quenching method such as a single roll method. (Problems to be Solved by the Invention) The biggest problem with amorphous alloys is that they are thermally unstable. This is due to the fact that the amorphous state is a thermodynamically non-equilibrium metastable state, and can be said to be the fate of amorphous alloys. In other words, each amorphous alloy generally has its own specific crystallization temperature, and when that temperature is exceeded, it changes to a more thermally stable crystalline alloy, and the superiority seen in the amorphous state is lost. All the characteristics that were previously acquired are lost. This crystallization temperature varies depending on the material, but is generally 0.4 to 0.4 of the melting point measured in absolute temperature.
It is known that the value is about 0.6 times. Therefore, in order to obtain an alloy with a high crystallization temperature, an alloy with a high melting point must be made amorphous. The Ta-Si-B alloy has an extremely high melting point of approximately 2300°C or higher. For this reason, the Ta-Si-B amorphous alloy produced by the liquid quenching method has a very high crystallization temperature of 800℃ to 1000℃, which greatly improves the problems of amorphous alloys. It became possible to do so (Special Application No. 61-012385). Furthermore, this Ta-Si-B-based amorphous alloy has excellent mechanical properties such as high strength and high hardness characteristic of general amorphous alloys, so it can be used as a wear-resistant material, for example. It can also be applied to materials for electrodes that are subject to temperature increases. However, it is produced by liquid quenching method.
The shape of Ta-Si-B amorphous alloy is several mm wide.
There was a problem in that it was not possible to obtain an amorphous alloy with a wide area because it was in the shape of a ribbon with a size of several centimeters. Furthermore, it has not been possible to form the amorphous alloy in the form of a thin film on a certain substance using the conventional liquid quenching method. The present invention solves the problems of the prior art and provides a method for producing a Ta-W based amorphous alloy thin film that has a crystallization temperature and has excellent mechanical properties, corrosion resistance, etc. The purpose is to (Means for Solving the Problems) The present invention uses an alloy represented by the formula Tal-x(Sil-yBy)x, where x=0.1 to 0.4 and y=0.01 to 0.99, to which ions are applied to a target substance. This is a method for producing a Ta-based amorphous alloy thin film, characterized in that a thin film is formed on a substrate and made amorphous by colliding with the target substance and ejecting the target substance in a gaseous state. (Function) As shown in Examples later, the present inventors have discovered that an amorphous alloy can be formed in a Ta-Si-B alloy in a composition range of 60 at% to 90 at% Ta. When the composition is outside this range, almost no amorphous structure is observed, and all the excellent properties characteristic of amorphous alloys are lost. Also, set the range of y to 0.01
The reason why it is limited to ~0.99 is that in this range, the crystallization temperature becomes higher than when a trace amount of Si or B is added, or when only one of them is added. The crystallization temperatures of these amorphous alloys are as high as 800°C or higher, corresponding to their high melting points. In addition, the mechanical properties of these amorphous alloys are high strength and high hardness, as is generally seen in amorphous alloys. Also, in terms of corrosion resistance, it has corrosion resistance comparable to that of Ta. The manufacturing method according to the present invention involves ionizing gas atoms or molecules such as argon gas in a high electric field or high frequency electric field, and then accelerating them by the electric field to cause them to collide with the target surface and knock out the target substance from the target surface. Since the thin film is formed on the substrate, it is possible to form a homogeneous alloy thin film over a large area. In addition, as a target substance,
A Ta-Si-B ternary alloy or a composite material in which Ta, Si, and B are combined in an appropriate area ratio is used. Therefore, the composition of the obtained alloy thin film is
By changing the composition of the target alloy,
Further, since the area ratio of the composite material can be easily changed by appropriately changing the area ratio, an amorphous alloy thin film having a desired composition can be easily obtained. (Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 shows an example of an apparatus for producing the Ta-based amorphous alloy thin film of the present invention. The device shown in FIG. 1 is a high frequency bipolar magnetron sputter device,
In the figure, 1 is a target and 2 is a substrate.
As target 1, a composite target was used in this example. That is, on top of a Ta target with a diameter of 100 mm and a thickness of 5 mm, a square with a side of 10 mm and a thickness of 1 mm is placed.
Appropriate numbers of Si and B plates were placed. At this time, Si and B plates are placed on the Ta target.
The distribution was set to be as uniform as possible. By changing the number of Si and B sheets, the composition of the resulting alloy thin film was changed. Board 2 has a length of 50
A glass with a width of 25 mm and a thickness of 0.2 mm was used. When producing a thin film, first open the valve 5 and move the vacuum chamber 3 with the vacuum pump 4.
Evacuate to a vacuum of 10 -7 Torr. Thereafter, the variable leak valve 6 is opened and argon gas is introduced from the argon gas introduction pipe 7 until the pressure reaches the 10 -3 Torr level. In this state, the high frequency power source 8 is turned on to start sputtering. The input power was 500W. At this time, the target 1 is water-cooled by the cooling water introduction pipe 10. Also,
The substrate 2 is cooled to below room temperature by liquid nitrogen 12 introduced through a liquid nitrogen introduction pipe 11 . This is because in order to make the Ta-based alloy thin film amorphous, it is necessary to cool the substrate with a coolant such as water or liquid nitrogen. When the substrate temperature is measured by the thermometer 15 through the thermocouple 14, it is -180°C.
It was found that it had been cooled down to. For the first hour of sputtering, the shutter 9 was closed and press sputtering was performed. This sputtering device has a permanent magnet 13 attached to the back side of the target.
This creates a magnetic field on the target surface, which enables high-speed sputtering. After the press sputtering was completed, the shutter 9 was opened to form a thin film on the substrate. Thin film preparation was carried out for 1 hour. The thickness of the obtained thin film was about 5 μm. The structure of the obtained Ta-Si-B alloy thin film was evaluated by X-ray diffraction. The film also showed no sharp diffraction peaks due to crystals, and a broad halo pattern was obtained, confirming that an amorphous alloy thin film was obtained. Table 1 shows the crystallization temperatures of these samples determined by differential thermal analysis. All exhibit high crystallization temperatures of 800°C or higher. The mechanical properties of these samples have a Vickers hardness of
It showed excellent properties in the range of 800-1500. Furthermore, even when these samples were left in concentrated hydrochloric acid, concentrated nitric acid, concentrated sulfuric acid, and concentrated aqua regia for one day, no signs of corrosion were observed, and no change in weight was observed.
【表】【table】
【表】
なお、本実施例では、高周波二極マグネトロン
スパツタ装置によるTa系非晶質合金薄膜の製造
方法を紹介したが、非晶質薄膜を作製する際に、
他のスパツタ方法、即ち、通常の直流二極スパツ
タ法、高周波二極スパツタ法、三極あるいは四極
スパツタ法、バイアススパツタ法、イオンビーム
スパツタ法、反応性スパツタ法等を利用してもさ
しつかえない。
（発明の効果）
以上詳細に説明したように、本発明によるTa
系非晶質合金薄膜の製造方法は高い結晶化温度を
有し、かつ、機械的特性、耐食性等にすぐれた非
晶質合金薄膜が容易に得られ、その効果は大き
い。[Table] In this example, a method for producing a Ta-based amorphous alloy thin film using a high-frequency bipolar magnetron sputtering device was introduced. However, when producing an amorphous thin film,
Other sputtering methods, such as regular DC bipolar sputtering, high-frequency bipolar sputtering, triode or quadrupole sputtering, bias sputtering, ion beam sputtering, reactive sputtering, etc., may be used. do not have. (Effects of the Invention) As explained in detail above, Ta according to the present invention
The method for producing an amorphous alloy thin film has a high crystallization temperature, and can easily produce an amorphous alloy thin film with excellent mechanical properties, corrosion resistance, etc., and is highly effective.
第１図は、本発明のTa系非晶質合金薄膜を作
製する装置の一例を示す図である。図において、
１はターゲツト、２は基板、３はチヤンバー、４
は真空ポンプ、５は真空バルブ、６はバリアブル
リークバルブ、７はアルゴンガス導入管、８は高
周波電源、９はシヤツター、１０はターゲツト用
冷却水導入管、１１は基板冷却用液体窒素導入
管、１２は液体窒素、１３は永久磁石、１４は熱
電対、１５は温度計である。
FIG. 1 is a diagram showing an example of an apparatus for producing a Ta-based amorphous alloy thin film of the present invention. In the figure,
1 is the target, 2 is the substrate, 3 is the chamber, 4
is a vacuum pump, 5 is a vacuum valve, 6 is a variable leak valve, 7 is an argon gas introduction pipe, 8 is a high frequency power supply, 9 is a shutter, 10 is a cooling water introduction pipe for the target, 11 is a liquid nitrogen introduction pipe for substrate cooling, 12 is liquid nitrogen, 13 is a permanent magnet, 14 is a thermocouple, and 15 is a thermometer.
Claims (1)
＝0.1〜0.4、ｙ＝0.01〜0.99である組成の合金を、
ターゲツト物質にイオンを衝突させ、前記ターゲ
ツト物質をガス状態で飛び出させることにより、
基板上に薄膜を形成するスパツタ装置を用いて、
非晶質化させることを特徴とするTa系非晶質合
金薄膜の製造方法。1 Tal−x(Sil−yBy)x, x
=0.1~0.4, y=0.01~0.99,
By bombarding the target substance with ions and ejecting the target substance in a gaseous state,
Using a sputtering device to form a thin film on a substrate,
A method for producing a Ta-based amorphous alloy thin film, which is characterized by making it amorphous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27018086A JPS63125664A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27018086A JPS63125664A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63125664A JPS63125664A (en) | 1988-05-28 |
| JPH0581669B2 true JPH0581669B2 (en) | 1993-11-15 |
Family
ID=17482637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27018086A Granted JPS63125664A (en) | 1986-11-12 | 1986-11-12 | Production of thin amorphous ta alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63125664A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6527813B1 (en) * | 1996-08-22 | 2003-03-04 | Canon Kabushiki Kaisha | Ink jet head substrate, an ink jet head, an ink jet apparatus, and a method for manufacturing an ink jet recording head |
-
1986
- 1986-11-12 JP JP27018086A patent/JPS63125664A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63125664A (en) | 1988-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Duwez | Structure and properties of glassy metals | |
| KR100499173B1 (en) | Method of making low magnetic permeability cobalt sputter targets | |
| US20200335246A1 (en) | Fe-Co BASED AMORPHOUS SOFT MAGNETIC ALLOY AND PREPARATION METHOD THEREOF | |
| KR100552500B1 (en) | High purity cobalt sputter target and process of manufacturing the same | |
| EP0468228B1 (en) | Method of producing amorphous magnetic film | |
| WO2008026439A1 (en) | Magnetic thin film | |
| Jiang et al. | The thermostability of the Fe16N2 phase deposited on a GaAs substrate by ion-beam-assisted deposition | |
| JPS6324030A (en) | Anisotropic rare earth magnet material and its production | |
| Radić et al. | Preparation and structure of Cu W thin films | |
| JP2001523767A (en) | Method for manufacturing Ni-Si magnetron sputtering target and target manufactured by the method | |
| JPH0794709B2 (en) | Target for magnetron cathode sputtering device | |
| JPH0581669B2 (en) | ||
| JPH0581670B2 (en) | ||
| JPH0581668B2 (en) | ||
| Qing-Ming et al. | Amorphization of binary alloys by magnetron cosputtering | |
| JPH0581667B2 (en) | ||
| JP2001073125A (en) | Co-Ta ALLOY SPUTTERING TARGET AND ITS PRODUCTION | |
| JPS63130767A (en) | Production of thin ta amorphous alloy film | |
| JPS63125670A (en) | Production of thin amorphous ta-w alloy film | |
| JP4698779B2 (en) | Magnetic sputtering target and manufacturing method thereof | |
| Bagmut | “In Situ” Electron Microscopy Measurements of the Relative Density Changes Upon Phase Transformations in Thin Solid Films | |
| JPS63130766A (en) | Production of thin ta amorphous alloy film | |
| JPH0582464B2 (en) | ||
| JPS63125667A (en) | Production of thin amorphous ta-w alloy film | |
| JPS63125668A (en) | Production of thin amorphous ta-w alloy film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |