JPH0580591B2 - - Google Patents

Info

Publication number
JPH0580591B2
JPH0580591B2 JP59222125A JP22212584A JPH0580591B2 JP H0580591 B2 JPH0580591 B2 JP H0580591B2 JP 59222125 A JP59222125 A JP 59222125A JP 22212584 A JP22212584 A JP 22212584A JP H0580591 B2 JPH0580591 B2 JP H0580591B2
Authority
JP
Japan
Prior art keywords
leak
vacuum
exhaust
pressure
evacuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59222125A
Other languages
Japanese (ja)
Other versions
JPS61101686A (en
Inventor
Naotake Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22212584A priority Critical patent/JPS61101686A/en
Publication of JPS61101686A publication Critical patent/JPS61101686A/en
Publication of JPH0580591B2 publication Critical patent/JPH0580591B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、電子顕微鏡等に用いる真空排気装置
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a vacuum evacuation device used in an electron microscope or the like.

〔発明の背景〕[Background of the invention]

電子顕微鏡では、試料近辺に浮遊する有機分子
が試料に付着して起るコンタミネーシヨンと、電
子銃内における放電現象の2つを防止するため、
電子銃室、試料室は高真空に保たれる。そこで、
これら電子銃室や試料室には、これらの室内を排
気して高真空にしたり、逆に気体を取り入れて大
気圧にする真空排気装置が設けられている。
In electron microscopes, in order to prevent two things: contamination caused by organic molecules floating near the sample adhering to the sample, and discharge phenomena within the electron gun.
The electron gun chamber and sample chamber are kept at high vacuum. Therefore,
These electron gun chambers and sample chambers are equipped with evacuation devices that evacuate these chambers to create a high vacuum, or conversely take in gas to bring it to atmospheric pressure.

ところでこの場合、電子銃室や試料室を高真圧
にしたとしても、器壁に吸着していた油脂類の蒸
発、真空シール用ゴムパツキンあるいは真空グリ
ース等からのガス放出、さらには電子線通路を通
して試料室にカメラ室から逆流してきた写真乳剤
の放出ガスなどにより、上記のようなコンタミネ
ーシヨンあるいは放電現象が生じる。
By the way, in this case, even if the electron gun chamber and sample chamber are made to have a high vacuum pressure, there will be evaporation of oils and fats adsorbed on the chamber walls, gas release from the vacuum sealing rubber gasket or vacuum grease, and even if the electron beam passes through the electron beam path. The above-mentioned contamination or discharge phenomenon occurs due to the released gas from the photographic emulsion flowing back into the sample chamber from the camera chamber.

そこで従来、コンタミネーシヨンあるいは放電
現象を起す原因となる各種ガス成分や塵などの有
機分子を除去するため、電子銃室については有機
ガスを室窒素ガス等に置換して放電を防止するよ
うにし、試料室については冷却トラツプによつて
浮遊ガス分子や塵を捕集する手段が講じられてい
る。さらに、写真乳剤の放出ガスの試料室への逆
流を防止するため、実公昭49−1532号公報で示さ
れているように、試料室と電子銃室とを真空的に
遮蔽するようにしている。
Conventionally, in order to remove various gas components and organic molecules such as dust that cause contamination or discharge phenomena, the organic gas in the electron gun chamber is replaced with chamber nitrogen gas to prevent discharge. In the sample chamber, a cooling trap is used to collect floating gas molecules and dust. Furthermore, in order to prevent the gas emitted from the photographic emulsion from flowing back into the sample chamber, the sample chamber and the electron gun chamber are vacuum-shielded, as shown in Japanese Utility Model Publication No. 1532/1983. .

しかしながら、いずれにおいても排気時とリー
ク時において、試料室内に残留していた塵が試料
に付着し、試料を損傷してしまうことについては
何等考慮されていない。このため、試料が半導体
ウエハであつた場合、この半導体ウエハに排気時
あるいはリーク時に塵が付着し、この半導体ウエ
ハを使えなくしてしまうという問題点が生じてい
た。
However, in none of these methods is any consideration given to the possibility that dust remaining in the sample chamber may adhere to the sample and damage the sample during exhaust and leakage. For this reason, when the sample is a semiconductor wafer, there is a problem in that dust adheres to the semiconductor wafer during exhaust or leakage, making the semiconductor wafer unusable.

この場合、排気圧およびリーク圧を徐々に変化
させれば、塵の舞い上りを抑えることも可能であ
るが、排気時間およびリーク時間が長くかかり、
試料観察工程の長時間化を招き望ましくない。
In this case, it is possible to suppress dust flying up by gradually changing the exhaust pressure and leak pressure, but it takes a long time for exhaust and leak, and
This is undesirable because it causes the sample observation process to take a long time.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、排気時およびリーク時におけ
る試料室路残留塵の試料への付着を防止し得、か
つ迅速に排気およびリークの動作を終了し得る真
空排気装置を提供することにある。
An object of the present invention is to provide a vacuum evacuation device that can prevent dust remaining in the sample chamber from adhering to the sample during evacuation and leakage, and can quickly complete the evacuation and leakage operations.

〔発明の概要〕[Summary of the invention]

本発明は、排気路およびリーク路をその排気圧
およびリーク圧が複数段階に切換え可能な経路で
構成したものである。
According to the present invention, the exhaust passage and the leak passage are configured so that the exhaust pressure and the leak pressure can be switched in a plurality of stages.

〔発明の実施例〕[Embodiments of the invention]

第1図に本発明の一実施例を示す。第1図にお
いて、真空容器1は主排管2及び予備排気パルプ
4と予備排管6を介して予備排気ポンプ系7で予
備排気される。そして、大気圧よりある定められ
た真空領域(粘性流領域)まで排気したことを真
空計16で検知し、次に主排気バルブ3を開け、
主排気ポンプ系5で高真空まで排気する。一方、
真空容器1を大気圧までリークする場合は、リー
ク用ガス源15からの気体を圧力調整弁12,1
3,14及びリークガス用バルブ10,11とフ
イルター9と真空バルブ8を介して真空容器1に
流して大気圧にする。
FIG. 1 shows an embodiment of the present invention. In FIG. 1, a vacuum container 1 is preliminarily evacuated by a pre-evacuation pump system 7 via a main evacuation pipe 2, a pre-evacuation pulp 4 and a pre-evacuation pipe 6. Then, the vacuum gauge 16 detects that the air has been evacuated to a predetermined vacuum region (viscous flow region) from atmospheric pressure, and then the main exhaust valve 3 is opened.
The main exhaust pump system 5 evacuates to a high vacuum. on the other hand,
When leaking the vacuum container 1 to atmospheric pressure, the gas from the leak gas source 15 is pumped through the pressure regulating valves 12 and 1.
3, 14, leak gas valves 10, 11, filter 9, and vacuum valve 8 into the vacuum container 1 to bring it to atmospheric pressure.

以上の構成において、排気及びリークの過程で
発生する発塵の現象を考えてみる。発塵といつて
も、一般には第1図に示すように真空容器1内に
残留している塵19が排気やリークの過程で図示
の如く舞い上がり、それが真空容器1内のウエハ
18上に付着することがほとんどである。したが
つて、この塵の舞い上がり現象をなくすように排
気圧、リーク圧を調整すればよい。
In the above configuration, let us consider the phenomenon of dust generation that occurs during the exhaust and leak processes. Generally speaking, dust 19 remaining in the vacuum chamber 1 flies up as shown in FIG. Most of the time, it sticks. Therefore, the exhaust pressure and leak pressure may be adjusted to eliminate this phenomenon of dust flying up.

そこで本発明では、排気の場合は、第3図の排
気圧特性に示す如く、大気圧から数Torrまでの
真空度A点までは予備排気系でゆつくり排気し、
これ以降は排気速度の大きい主排気系に切換えて
排気する方法としている。第3図の実線が本発明
による排気特性カーブであり、破線がスロー排気
のまゝで大気圧から高真空領域まで排気した時の
排気カーブを示している。なお特性図は横軸、縦
軸ともに対数目盛で表わしている。これからあき
らかなように排気時間の差が大きい事がわかる。
Therefore, in the case of evacuation, in the case of evacuation, as shown in the evacuation pressure characteristics in FIG.
From this point on, the method used is to switch to the main exhaust system, which has a higher exhaust speed, for exhaust. The solid line in FIG. 3 is an exhaust characteristic curve according to the present invention, and the broken line is an exhaust curve when exhausting from atmospheric pressure to a high vacuum region while maintaining slow exhaust. In the characteristic diagram, both the horizontal and vertical axes are expressed on a logarithmic scale. As is clear from this, there is a large difference in exhaust time.

一方、リークの場合は、第4図のリーク圧特性
に沿つた操作を行う。すなわち、まず圧力調整弁
12を最も低い圧力に調整し、順次調整弁13,
14と高い圧力調整しておき、各バルブ8,1
0,11およびフイルター9は閉じた状態にして
おく。次に、真空バルブ8を開けてリーク系の最
も低い圧力のガスを真空容器1に導入し、第4図
のB点までリークさせ、次にバルブ10を開けて
次に高い圧力のガスを導入してC点の圧力までリ
ークさせ、最後に最も高い圧力ラインのバルブ1
1を開けて真空容器1を大気圧にリークさせる。
On the other hand, in the case of a leak, operations are performed in accordance with the leak pressure characteristics shown in FIG. That is, first, the pressure regulating valve 12 is adjusted to the lowest pressure, and then the regulating valves 13,
Adjust the pressure to a high level of 14, and then press each valve 8, 1.
0, 11 and filter 9 are kept closed. Next, open the vacuum valve 8 and introduce the lowest pressure gas in the leak system into the vacuum container 1, allowing it to leak to point B in Figure 4, then open the valve 10 and introduce the next highest pressure gas. to leak to the pressure at point C, and finally close valve 1 on the highest pressure line.
1 to allow the vacuum container 1 to leak to atmospheric pressure.

以上の方法をとれば、最初からスローリークを
する方法と比べて極めて短時間でリークさせるこ
とができる。なおここでは、3段階の圧力差を設
けたリーク系としているが、これは真空容器1の
大きさ等により個々に選択する事が必要である。
例えば本実施例の場合、B点から3段目のスロー
リークを実施すると第4図の点線の如く長時間を
要することになる。
By using the above method, it is possible to leak data in an extremely short time compared to the method of performing a slow leak from the beginning. In this case, a leak system with three levels of pressure difference is used, but this needs to be selected individually depending on the size of the vacuum vessel 1, etc.
For example, in the case of this embodiment, if the third stage slow leak is performed from point B, it will take a long time as indicated by the dotted line in FIG.

以下説明した排気・リーク操作における真空圧
A,B,Cの各点は、真空計16の出力信号を制
御回路17に導いて検出され、この検出値に基づ
いてバルブ10,11等の開閉が制御される。こ
の場合、ある定められた真空排気系の場合は、
A,B,C点に達する時間をパラメータとして制
御することもできる。
Each point of vacuum pressure A, B, and C in the exhaust/leak operation described below is detected by guiding the output signal of the vacuum gauge 16 to the control circuit 17, and based on this detected value, the valves 10, 11, etc. are opened/closed. controlled. In this case, for a certain vacuum evacuation system,
The time required to reach points A, B, and C can also be controlled as a parameter.

第2図は本発明の他の実施例を示すものであ
り、真空計16の出力信号に応じて制御回路17
が可変コンダクタンスバルブ3′,4′,8′のコ
ンダクタンスを制御し、第3図、第4図に示した
特性カーブとほぼ同様のスロー排気、スローリー
ク曲線で排気およびリークを行うものである。
FIG. 2 shows another embodiment of the present invention, in which the control circuit 17 is activated in response to the output signal of the vacuum gauge 16.
controls the conductance of the variable conductance valves 3', 4', and 8', and performs exhaust and leak with slow exhaust and slow leak curves that are substantially similar to the characteristic curves shown in FIGS. 3 and 4.

この実施例によれば、リーク系が単純化される
ことと、排気・リーク曲線を線形に自在に制御す
ることが可能となり、多種の真空容器に対応する
ことができるという利点がある。
According to this embodiment, there are advantages that the leak system is simplified and that the exhaust/leak curve can be linearly and freely controlled, so that it can be applied to various types of vacuum containers.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように本発明によれ
ば、排気時間およびリーク時間を長びかせること
なく、排気時およびリーク時における試料室残留
塵の試料への付着を防止できるという優れた効果
がある。
As is clear from the above description, the present invention has the excellent effect of preventing residual dust in the sample chamber from adhering to the sample during evacuation and leakage without prolonging the evacuation time and leakage time. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す系統図、第2
図は本発明の他の実施例を示す系統図、第3図お
よび第4図は実施例における排気圧特性およびリ
ーク圧特性の一例を示す図である。 1…真空室、3,4,8…真空バルブ、5…主
排気系、7…予備排気系、9…フイルター、1
0,11…リークガス用バルブ、12,13,1
4…圧力調整弁、15…リーク用ガス源、17…
制御回路、16…真器計、18…ウエハ試料、1
9…塵。
Figure 1 is a system diagram showing one embodiment of the present invention, Figure 2 is a system diagram showing an embodiment of the present invention.
The figure is a system diagram showing another embodiment of the present invention, and FIGS. 3 and 4 are diagrams showing examples of exhaust pressure characteristics and leak pressure characteristics in the embodiment. 1... Vacuum chamber, 3, 4, 8... Vacuum valve, 5... Main exhaust system, 7... Preliminary exhaust system, 9... Filter, 1
0,11...Leak gas valve, 12,13,1
4...Pressure regulating valve, 15...Leak gas source, 17...
Control circuit, 16... True instrument, 18... Wafer sample, 1
9...Dust.

Claims (1)

【特許請求の範囲】[Claims] 1 真空室を排気する真空ポンプと、真空室をリ
ーク系路を介して大気圧にリークさせる気体源と
を有する真空排気装置において、前記リーク系路
をリーク圧が複数段階に切換え可能なリーク系路
で構成したことを特徴とする真空排気装置。
1. In a vacuum evacuation device having a vacuum pump that evacuates a vacuum chamber and a gas source that causes the vacuum chamber to leak to atmospheric pressure via a leak system path, a leak system in which the leak pressure can be switched to multiple levels in the leak system path. A vacuum evacuation device characterized by being configured with a duct.
JP22212584A 1984-10-24 1984-10-24 Evacuating device Granted JPS61101686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22212584A JPS61101686A (en) 1984-10-24 1984-10-24 Evacuating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22212584A JPS61101686A (en) 1984-10-24 1984-10-24 Evacuating device

Publications (2)

Publication Number Publication Date
JPS61101686A JPS61101686A (en) 1986-05-20
JPH0580591B2 true JPH0580591B2 (en) 1993-11-09

Family

ID=16777551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22212584A Granted JPS61101686A (en) 1984-10-24 1984-10-24 Evacuating device

Country Status (1)

Country Link
JP (1) JPS61101686A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4776300B2 (en) * 2005-08-10 2011-09-21 日本電子株式会社 Gas flow rate setting method and ion beam processing apparatus
CN110509906B (en) * 2019-09-19 2024-04-02 深圳市大为创新科技股份有限公司 Control system of hydraulic retarder for underground operation vehicle
WO2021070338A1 (en) * 2019-10-10 2021-04-15 株式会社日立ハイテク Charged particle beam device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941855B2 (en) * 1976-11-26 1984-10-11 株式会社ブリヂストン Manufacturing method of synthetic resin board

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941855U (en) * 1982-09-01 1984-03-17 日本電子株式会社 Lens barrel leak device for electron microscopes, etc.
JPS59115553U (en) * 1983-01-26 1984-08-04 日本電子株式会社 Gas introduction device in vacuum equipment
JPS60167192U (en) * 1984-04-17 1985-11-06 日本電子株式会社 Exhaust system using turbo molecular pump

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941855B2 (en) * 1976-11-26 1984-10-11 株式会社ブリヂストン Manufacturing method of synthetic resin board

Also Published As

Publication number Publication date
JPS61101686A (en) 1986-05-20

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