JPH0580070A - Strain gauge element and manufacture thereof - Google Patents

Strain gauge element and manufacture thereof

Info

Publication number
JPH0580070A
JPH0580070A JP24356591A JP24356591A JPH0580070A JP H0580070 A JPH0580070 A JP H0580070A JP 24356591 A JP24356591 A JP 24356591A JP 24356591 A JP24356591 A JP 24356591A JP H0580070 A JPH0580070 A JP H0580070A
Authority
JP
Japan
Prior art keywords
film
strain gauge
silicon dioxide
thin film
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24356591A
Other languages
Japanese (ja)
Inventor
Yukihiro Kato
藤 幸 裕 加
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aisin Corp
Original Assignee
Aisin Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aisin Seiki Co Ltd filed Critical Aisin Seiki Co Ltd
Priority to JP24356591A priority Critical patent/JPH0580070A/en
Publication of JPH0580070A publication Critical patent/JPH0580070A/en
Pending legal-status Critical Current

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  • Measurement Of Force In General (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

PURPOSE:To form a protective film which enables complete prevention of the infiltration of water. CONSTITUTION:A strain gauge element has a strain gauge section which is bonded on a beam 2 sensing a distortion on a beam plate 1 in an acceleration sensor device to play a role of an electric resistance. A silicon dioxide thin film 8 is provided on the surface of a gauge and a resin coating film 9 comprising a mixture of cyclic rubber and a photosensitive crosslinking agent on the surface of the silicon dioxide thin film 8. With the silicon dioxide thin film on the surface of the gauge and the resin coating film mainly composed of the photosensitive cyclic rubber on the surface thereof, there is no possibility of a pinhole, cracking and the like in a protective film, which eliminates fear of infiltration of water achieving excellent resistance to moisture. In this production method, the minimum thin protective film is formed by a dip coating or the like least affecting dynamic distortion characteristics of the strain gauge element. A cyclic rubber resist used as photosensitive coating resin can be obtained inexpensively with ease with a high quality thereby enabling the production of a high quality strain gauge element at a low cost.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、圧力センサ,加速度セ
ンサなどの各種センサに使用されている歪ゲージ素子及
びその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a strain gauge element used in various sensors such as a pressure sensor and an acceleration sensor, and a manufacturing method thereof.

【0002】[0002]

【従来の技術】本発明に関する従来技術としては特開昭
62−222137号公報及び実開平2−146372
号公報に示されるものが知られている。前者は、ガラス
よりなるダイヤフラム上にスパッタリングによつてNi
−Si−B非晶質合金薄膜を付着させ、耐熱性を向上さ
せるために、その表面上に密着性に優れた二酸化ケイ素
を主成分とした保護膜をスパッタリングによつて付着さ
せた圧力センサの歪ゲージ素子である。一方、後者は、
図3に示されるように金属よりなる基部10の表面にス
パッタリングによつて絶縁膜11を付着させ、その表面
上に導電性パターン12を形成し、耐熱性を向上させる
ために、その表面上に密着性に優れた二酸化ケイ素を主
成分とした二酸化ケイ素薄膜14をスパッタリングによ
つて付着させた加速度センサの歪ゲージ素子である。
2. Description of the Related Art As the prior art relating to the present invention, Japanese Patent Laid-Open Publication No. 62-222137 and Japanese Utility Model Laid-Open No. 2-146372
The one shown in Japanese Patent Publication is known. In the former, Ni is sputtered on a diaphragm made of glass.
-Si-B amorphous alloy thin film is adhered to the surface of the pressure sensor in order to improve heat resistance, and a protective film mainly composed of silicon dioxide having excellent adhesiveness is adhered to the surface by sputtering. It is a strain gauge element. On the other hand, the latter is
As shown in FIG. 3, an insulating film 11 is attached to the surface of a metal base 10 by sputtering, and a conductive pattern 12 is formed on the surface of the base 10 to improve heat resistance. This is a strain gauge element of an acceleration sensor in which a silicon dioxide thin film 14 containing silicon dioxide as a main component, which has excellent adhesiveness, is attached by sputtering.

【0003】[0003]

【発明が解決しようとする課題】しかし、上記のような
2種の歪ゲージ素子に用いられ、スパッタリング等の真
空成膜法により形成された二酸化ケイ素を主成分とする
保護膜16では、水と接触すると、図4に示されるよう
に、保護膜の決裂によるピンホールや保護膜16の段差
の存在する部分への付着不足に伴うクラック等が存在す
るために、水分が侵入して、腐食し易くなる。さらに、
圧力センサ装置内のNi−Si−B非晶質合金薄膜や加
速度センサ装置内の導電性パターン12等のゲージ膜1
5は、使用状態では電圧が印加されているので、電流の
流入と水分の侵入による電食が非常におこり易くなる。
However, the protective film 16 containing silicon dioxide as a main component, which is used for the above-mentioned two types of strain gauge elements and is formed by a vacuum film forming method such as sputtering, is Upon contact, as shown in FIG. 4, there are pinholes due to the breakage of the protective film and cracks due to insufficient adhesion to the stepped portion of the protective film 16, so that water penetrates and corrodes. It will be easier. further,
Gauge film 1 such as Ni-Si-B amorphous alloy thin film in the pressure sensor device or conductive pattern 12 in the acceleration sensor device 1
In No. 5, the voltage is applied in the use state, so that the electrolytic corrosion due to the inflow of current and the intrusion of water is very likely to occur.

【0004】故に、本発明は、水分の侵入を完全に防ぐ
保護膜を形成することをその技術的課題とするものであ
る。
Therefore, the present invention has as its technical problem the formation of a protective film that completely prevents the intrusion of moisture.

【0005】[0005]

【問題点を解決するための手段】上記の技術的課題を解
決するための技術的手段は、加速度センサ装置内のビー
ムプレート上の歪みを感知する梁に接着され、電気抵抗
の役目をする歪ゲージ部を有する歪ゲージ素子におい
て、ゲージ表面上に二酸化ケイ素薄膜と該二酸化ケイ素
薄膜の表面上に環化ゴムと感光性の架橋剤との混合物か
らなる樹脂コーティング膜を設けた歪ゲージ素子と加速
度センサ装置内のビームプレート上の歪みを感知する梁
の表面上に真空成膜法により導電性膜を付着し、感光性
のレジストを用いて、レジストで被覆されていない不要
部分を溶解除去することによつて前記導電性膜を所定の
形状に加工し、導電性パターンを形成して、電極部をマ
スキングした後、歪ゲージ部及び配線部の表面上に真空
成膜法により二酸化ケイ素薄膜を付着し、該二酸化ケイ
素薄膜及び前記電極部の表面上に感光性の環化ゴムレジ
ストをコーティングし乾燥させ、露光することにより、
前記二酸化ケイ素薄膜の表面上に塗布されたレジスト膜
をパターンとして硬化し、次いで現像及びリンスするこ
とにより、前記電極部のみを露出させ、最後に焼成する
ことによつて二酸化ケイ素薄膜の表面上に樹脂コーティ
ング膜を形成する歪ゲージ素子の製造方法である。
[Means for Solving the Problems] The technical means for solving the above-mentioned technical problems includes a strain acting as an electric resistance, which is adhered to a beam for sensing a strain on a beam plate in an acceleration sensor device. In a strain gauge element having a gauge portion, a strain gauge element having a silicon dioxide thin film on the gauge surface and a resin coating film made of a mixture of a cyclized rubber and a photosensitive crosslinking agent on the surface of the silicon dioxide thin film and an acceleration A conductive film is attached on the surface of the beam that detects the strain on the beam plate in the sensor device by a vacuum film forming method, and a photosensitive resist is used to dissolve and remove unnecessary portions not covered with the resist. Then, the conductive film is processed into a predetermined shape to form a conductive pattern, the electrode portion is masked, and then the oxide film is formed on the surface of the strain gauge portion and the wiring portion by a vacuum film forming method. Depositing a Lee-containing film, coated dried photosensitive cyclized rubber resist on the surface of the silicon dioxide thin film and the electrode portions, by exposing,
The resist film applied on the surface of the silicon dioxide thin film is cured as a pattern, and then developed and rinsed to expose only the electrode portion, and finally baked to form a film on the surface of the silicon dioxide thin film. It is a manufacturing method of a strain gauge element which forms a resin coating film.

【0006】[0006]

【実施例】以下、本発明の実施例を図面を用いて説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

【0007】図1は、本発明の加速度センサ装置内のビ
ームプレートの拡大平面図を示し、図2は、図1のビー
ムプレートのX−X線断面図を示している。
FIG. 1 is an enlarged plan view of the beam plate in the acceleration sensor device of the present invention, and FIG. 2 is a sectional view taken along line XX of the beam plate of FIG.

【0008】従来と同様に、図1に示すように、ビーム
プレート1は歪みを感知する梁2と梁2に接着させた歪
ゲージ部3a〜3hと配線部4a及び電圧が印加される
電極部4bから構成されている。そして、梁2は厚さ約
0.1mmの金属であるため、外部からの力の影響を受
けやすい構造となつており、歪ゲージ部3a〜3hはゲ
ージ抵抗の役目を果たしている。
As in the conventional case, as shown in FIG. 1, the beam plate 1 includes a beam 2 for sensing strain, strain gauge portions 3a to 3h bonded to the beam 2, wiring portions 4a, and an electrode portion to which a voltage is applied. 4b. Since the beam 2 is a metal having a thickness of about 0.1 mm, the beam 2 has a structure that is easily affected by an external force, and the strain gauge portions 3a to 3h serve as a gauge resistance.

【0009】本発明は、振り子の加わる慣性力により発
生する歪みを梁2に接触した歪ゲージ部3a〜3hが感
知し、ゲージ抵抗としてはたらき、電気抵抗を変化させ
ることにより加速度を検出する仕組みになつている。
The present invention has a mechanism in which the strain gauge portions 3a to 3h in contact with the beam 2 sense the strain generated by the inertial force applied by the pendulum, act as gauge resistance, and detect the acceleration by changing the electrical resistance. I'm running.

【0010】図2に示すように、本発明の歪ゲージ素子
は、金属からなる基部5と絶縁膜6と導電性パターン7
と保護膜の役目を果たす二酸化ケイ素薄膜8及び保護膜
の役目を果たす樹脂コーティング膜9とから構成されて
いる。つまり、本発明は、2層の保護膜を形成したこと
を特徴としている。
As shown in FIG. 2, the strain gauge element of the present invention comprises a metal base 5, an insulating film 6, and a conductive pattern 7.
And a silicon dioxide thin film 8 serving as a protective film and a resin coating film 9 serving as a protective film. That is, the present invention is characterized in that the two-layer protective film is formed.

【0011】ビームプレートの製造方法を図1及び図2
を用いて説明すると、次のようになる。
A method of manufacturing a beam plate will be described with reference to FIGS.
The explanation will be as follows.

【0012】清浄した基部5の表面にスパッタリング等
の真空成膜法により絶縁膜6を付着させた。次に、絶縁
膜6の表面に真空成膜法により導電性膜を付着し、感光
性のレジスト(樹脂材料の溶剤)を用いて、レジストで
被覆されていない不要部分をエッチング除去すること
(フォトエッチング)によつて導電性膜を所望の形状に
加工し、導電性パターン7を形成した。そして、電極部
4bの表面に薄膜が付着するのを防ぐために、電極部4
bをレジスト皮膜で保護した後、歪ゲージ部3a〜3h
及び配線部4aの表面上に真空成膜法により約1μmの
二酸化ケイ素薄膜8を付着した。その後、感光性の環化
ゴムレジスト(東京応化工業株式会社製,商品名「OM
R−83」)中に浸すことによつて二酸化ケイ素薄膜8
及び電極部4bの表面上に全面的に感光性の環化ゴムレ
ジストを約2μmの厚さにコーティングし、下地との接
着性を強めるために、100℃で25分間乾燥(プレベ
ーク)させた。
An insulating film 6 was attached to the cleaned surface of the base 5 by a vacuum film forming method such as sputtering. Next, a conductive film is attached to the surface of the insulating film 6 by a vacuum film forming method, and a photosensitive resist (solvent of resin material) is used to etch and remove unnecessary portions not covered with the resist (photo). The conductive film was processed into a desired shape by etching to form the conductive pattern 7. Then, in order to prevent the thin film from adhering to the surface of the electrode portion 4b,
After protecting b with a resist film, strain gauge parts 3a to 3h
Then, a silicon dioxide thin film 8 of about 1 μm was deposited on the surface of the wiring portion 4a by the vacuum film forming method. After that, a photosensitive cyclized rubber resist (trade name “OM” manufactured by Tokyo Ohka Kogyo Co., Ltd.
R-83 ") by dipping in silicon dioxide thin film 8
The surface of the electrode portion 4b was coated with a photosensitive cyclized rubber resist to a thickness of about 2 μm and dried (prebaked) at 100 ° C. for 25 minutes in order to enhance the adhesion to the base.

【0013】ところで、感光性の環化ゴムレジストは、
図7,図8に示すような環化ゴムと感光性の架橋剤との
混合物であり、接着性が強く、一般的なフォトエッチン
グで容易にパターニングができるという利点がある。こ
こで、温度変化に伴う保護膜の膨張,収縮が梁2に歪み
を与えたり、梁2の動歪特性を変化させてしまい、ゲー
ジ表面に形成される保護膜を最小限に薄くする必要があ
るため、梁2に影響を与えないように、感光性の環化ゴ
ムレジスト中に浸すというディップコート法を用いた。
また、ここで、ディップコート等でコーティングした場
合、コーティング膜が試料表面全域に広がつてしまう
が、電極部4bのコーティング膜を除去する必要がある
ために、感光性の環化ゴムレジストを用いた。
By the way, the photosensitive cyclized rubber resist is
It is a mixture of a cyclized rubber and a photosensitive cross-linking agent as shown in FIGS. 7 and 8, and has an advantage that it has strong adhesiveness and can be easily patterned by general photo-etching. Here, the expansion and contraction of the protective film due to the temperature change may distort the beam 2 or change the dynamic strain characteristics of the beam 2, so that the protective film formed on the gauge surface needs to be thinned to the minimum. Therefore, the dip coating method of immersing in the photosensitive cyclized rubber resist was used so as not to affect the beam 2.
Also, here, when the coating film is spread by the dip coating or the like, the coating film spreads over the entire surface of the sample, but since the coating film of the electrode portion 4b needs to be removed, a photosensitive cyclized rubber resist is used. I was there.

【0014】マスクを通して光を当てること(露光)に
より、二酸化ケイ素薄膜8の表面上に塗布されたレジス
ト膜をパターンとして硬化し、次いでOMR現像液を用
いて現像し、次いでOMRリンス液を用いてリンスする
ことにより、電極部4bの表面上に塗布されたレジスト
膜を完全に除去し、電極部4bのみを露出させ、最後に
150℃で30分間焼成すること(ポストベーク)によ
つて、残留している溶剤成分を蒸発させ、さらに架橋反
応が起こり、下地に対する接着性が強くなり、二酸化ケ
イ素薄膜8の表面上に樹脂コーティング膜10を形成し
た。
The resist film coated on the surface of the silicon dioxide thin film 8 is hardened in a pattern by exposing it to light through a mask (exposure), and then developed using an OMR developing solution, and then using an OMR rinse solution. By rinsing, the resist film applied on the surface of the electrode portion 4b is completely removed, only the electrode portion 4b is exposed, and finally, baking is performed at 150 ° C. for 30 minutes (post-baking) to leave no residue. The solvent component contained therein is evaporated, a crosslinking reaction further occurs, the adhesion to the base is strengthened, and the resin coating film 10 is formed on the surface of the silicon dioxide thin film 8.

【0015】以上のように精製した2層の保護膜を有す
る本実施例による歪ゲージ素子と二酸化ケイ素薄膜14
しか保護膜を有しない従来例による歪ゲージ素子におい
て、80℃,95%RHの条件下で、高温・高湿試験を
行つた際の放置時間とゲージ抵抗変化率の関係を図5に
示す。尚、高温・高湿試験中はゲージに所定の電圧を印
加し、通電状態とした。図5を見ると分かるように、従
来例においては、試験開始後20時間程度でゲージ抵抗
が変化し始め、その後著しく変化しており、ゲージ部を
観察したところクラックやピンホール等が存在し、そこ
から水分が侵入して腐食しかかつており、耐湿性には優
れていないといえる。これに対して、本実施例において
は、ゲージ抵抗値は200時間経過後も試験開始時とほ
とんど変わらないために、耐湿性に優れているといえ
る。
The strain gauge element and the silicon dioxide thin film 14 according to the present embodiment having the two-layer protective film purified as described above.
FIG. 5 shows the relationship between the leaving time and the rate of change in gauge resistance when a high temperature / high humidity test was performed under conditions of 80 ° C. and 95% RH in a conventional strain gauge element having only a protective film. During the high-temperature and high-humidity test, a predetermined voltage was applied to the gauge to energize it. As can be seen from FIG. 5, in the conventional example, the gauge resistance started to change about 20 hours after the start of the test and then changed remarkably, and when the gauge part was observed, cracks, pinholes, etc. existed, It can be said that moisture intrudes from there and only corrodes, so that it is not excellent in moisture resistance. On the other hand, in this example, the gauge resistance value is almost the same as that at the start of the test even after 200 hours, so it can be said that the moisture resistance is excellent.

【0016】さらに、2層の保護膜を有する本実施例に
よる歪ゲージ素子と二酸化ケイ素薄膜14しか保護膜を
有しない従来例による歪ゲージ素子において、120℃
で1000時間高温試験を行つた際の放置時間とゲージ
抵抗変化率の関係を図6に示す。尚、高温試験中はゲー
ジに所定の電圧を印加し、通電状態とした。図6を見る
と、従来例と同じように本実施例は、ゲージ抵抗が10
00時間経過後も試験開始時とほとんど変わらないため
に、耐熱性にも優れているといえる。
Further, in the strain gauge element according to the present embodiment having a two-layer protective film and the strain gauge element according to the conventional example having only the silicon dioxide thin film 14 as a protective film, 120 ° C.
FIG. 6 shows the relationship between the leaving time and the rate of change in gauge resistance when a high temperature test was performed for 1000 hours. During the high temperature test, a predetermined voltage was applied to the gauge to make it conductive. As shown in FIG. 6, in this embodiment, the gauge resistance is 10 as in the conventional example.
It can be said that it is also excellent in heat resistance because it is almost the same as when the test was started even after the lapse of 00 hours.

【0017】尚、感光性のコーティング樹脂としては、
ポリイミドも挙げられるが、この場合、最終工程での焼
成温度を300〜400℃に設定しなければならないた
めに、歪ゲージの特性が変化する恐れがあり、コーティ
ング膜にクラックが入りやすく水分が侵入する恐れがあ
り、ポリイミドは非常に高価である。したがつて、本実
施例においては、感光性のコーティング樹脂に安価な感
光性の環化ゴムレジストを用いた。
As the photosensitive coating resin,
Polyimide can also be used, but in this case, since the firing temperature in the final step must be set to 300 to 400 ° C., the characteristics of the strain gauge may change, and cracks easily form in the coating film and moisture invades. Polyimide is very expensive. Therefore, in this example, an inexpensive photosensitive cyclized rubber resist was used as the photosensitive coating resin.

【0018】[0018]

【発明の効果】本発明は、以下の如く効果を有する。The present invention has the following effects.

【0019】本発明は、ゲージ表面上に二酸化ケイ素薄
膜と二酸化ケイ素薄膜の表面上に感光性の環化ゴムを主
成分とする樹脂コーティング膜を設けているため、保護
膜にピンホールやクラック等が入る心配がなく、水が侵
入する恐れもなく、耐湿性に優れている。また、本発明
による製造方法では、ディップコート等によつて、最小
限に薄い保護膜を形成されているので、歪ゲージ素子の
動歪特性に影響を及ぼさない。そして、感光性のコーテ
ィング樹脂として用いる環化ゴムレジストは高品質で容
易に安く入手できるので、高品質の歪ゲージ素子を低コ
ストで製造することが可能になる。
In the present invention, since the silicon dioxide thin film is provided on the gauge surface and the resin coating film containing photosensitive cyclized rubber as a main component is provided on the surface of the silicon dioxide thin film, pinholes, cracks, etc. are formed in the protective film. There is no risk of water getting in, there is no risk of water entering, and it has excellent moisture resistance. Further, in the manufacturing method according to the present invention, since the minimum protective film is formed by dip coating or the like, it does not affect the dynamic strain characteristics of the strain gauge element. Since the cyclized rubber resist used as the photosensitive coating resin is of high quality and can be easily obtained at low cost, a high-quality strain gauge element can be manufactured at low cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の加速度センサ装置内のビームプレート
の拡大平面図である。
FIG. 1 is an enlarged plan view of a beam plate in an acceleration sensor device of the present invention.

【図2】図1のビームプレートのX−X線断面図であ
る。
2 is a cross-sectional view taken along line XX of the beam plate of FIG.

【図3】従来の加速度センサ装置内のビームプレートの
断面図である。
FIG. 3 is a sectional view of a beam plate in a conventional acceleration sensor device.

【図4】従来技術の問題点の説明図である。FIG. 4 is an explanatory diagram of problems in the conventional technique.

【図5】本実施例による歪ゲージ素子と従来例による歪
ゲージ素子において、80℃,95%RHの条件下で、
高温・高湿試験を行つた際の放置時間とゲージ抵抗変化
率の関係を示す図である。
FIG. 5 shows a strain gauge element according to this embodiment and a strain gauge element according to a conventional example under the conditions of 80 ° C. and 95% RH.
It is a figure which shows the relationship between the leaving time and the gauge resistance change rate at the time of performing a high temperature and high humidity test.

【図6】本実施例による歪ゲージ素子と従来例による歪
ゲージ素子において、120℃で1000時間高温試験
を行つた際の放置時間とゲージ抵抗変化率の関係を示す
図である。
FIG. 6 is a diagram showing a relationship between a leaving time and a rate of change in gauge resistance when a high temperature test is performed at 120 ° C. for 1000 hours in the strain gauge element according to the present example and the strain gauge element according to the conventional example.

【図7】環化ゴムの化学構造を示す説明図である。FIG. 7 is an explanatory diagram showing the chemical structure of cyclized rubber.

【図8】感光性の架橋剤であるビスジアザイドの化学構
造を示す説明図である。
FIG. 8 is an explanatory diagram showing the chemical structure of bisdiazide, which is a photosensitive crosslinking agent.

【符号の説明】[Explanation of symbols]

1 ビームプレート 2 梁 3a〜3h 歪ゲージ部 4a 配線部 4b 電極部 5,10 基部 6,11 絶縁膜 7,12 導電性パターン 8,13 二酸化ケイ素薄膜 9 樹脂コーティング膜 14 絶縁基板 15 ゲージ膜 16 保護膜 DESCRIPTION OF SYMBOLS 1 Beam plate 2 Beams 3a-3h Strain gauge part 4a Wiring part 4b Electrode part 5,10 Base part 6,11 Insulating film 7,12 Conductive pattern 8,13 Silicon dioxide thin film 9 Resin coating film 14 Insulating substrate 15 Gauge film 16 Protection film

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 加速度センサ装置内のビームプレート上
の歪みを感知する梁に接着され、電気抵抗の役目をする
歪ゲージ部を有する歪ゲージ素子において、ゲージ表面
上に二酸化ケイ素薄膜と該二酸化ケイ素薄膜の表面上に
環化ゴムと感光性の架橋剤との混合物からなる樹脂コー
ティング膜を設けたことを特徴とする歪ゲージ素子。
1. A strain gauge element having a strain gauge portion bonded to a strain sensing beam on a beam plate in an acceleration sensor device and serving as an electric resistance, wherein a silicon dioxide thin film and the silicon dioxide are provided on the gauge surface. A strain gauge element characterized in that a resin coating film made of a mixture of cyclized rubber and a photosensitive cross-linking agent is provided on the surface of a thin film.
【請求項2】 加速度センサ装置内のビームプレート上
の歪みを感知する梁の表面上に真空成膜法により導電性
膜を付着し、感光性のレジストを用いて、レジストで被
覆されていない不要部分をエッチング除去することによ
つて前記導電性膜を所定の形状に加工し、導電性パター
ンを形成して、電極部をマスキングした後、歪ゲージ部
及び配線部の表面上に真空成膜法により二酸化ケイ素薄
膜を付着し、該二酸化ケイ素薄膜及び前記電極部の表面
上に感光性の環化ゴムレジストをコーティングし乾燥さ
せ、露光することにより、前記二酸化ケイ素薄膜の表面
上に塗布されたレジスト膜をパターンとして硬化し、次
いで現像及びリンスすることにより、前記電極部のみを
露出させ、最後に焼成することによつて二酸化ケイ素薄
膜の表面上に樹脂コーティング膜を形成することを特徴
とする歪ゲージ素子の製造方法。
2. A conductive film is attached to the surface of a beam that detects strain on a beam plate in an acceleration sensor device by a vacuum film forming method, and a photosensitive resist is used, which is not covered with the resist. The conductive film is processed into a predetermined shape by etching away a portion, a conductive pattern is formed, the electrode portion is masked, and then a vacuum film forming method is performed on the surface of the strain gauge portion and the wiring portion. By depositing a silicon dioxide thin film on the surface of the silicon dioxide thin film and the electrode portion, coating a photosensitive cyclized rubber resist on the surface of the silicon dioxide thin film, drying, and exposing the resist. The film is cured as a pattern, and then developed and rinsed to expose only the electrode portion, and finally baked to form a resin coat on the surface of the silicon dioxide thin film. A method for manufacturing a strain gauge element, which comprises forming a coating film.
JP24356591A 1991-09-24 1991-09-24 Strain gauge element and manufacture thereof Pending JPH0580070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24356591A JPH0580070A (en) 1991-09-24 1991-09-24 Strain gauge element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24356591A JPH0580070A (en) 1991-09-24 1991-09-24 Strain gauge element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0580070A true JPH0580070A (en) 1993-03-30

Family

ID=17105734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24356591A Pending JPH0580070A (en) 1991-09-24 1991-09-24 Strain gauge element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0580070A (en)

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EP2426472A1 (en) * 2010-09-01 2012-03-07 Silicon Valley Micro E Corporation Bicycle Power meter with frame mounted sensor
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US11702730B2 (en) 2017-09-29 2023-07-18 Minebea Mitsumi Inc. Strain gauge
US11692806B2 (en) 2017-09-29 2023-07-04 Minebea Mitsumi Inc. Strain gauge with improved stability
US11543308B2 (en) 2017-09-29 2023-01-03 Minebea Mitsumi Inc. Strain gauge
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US11542590B2 (en) 2017-09-29 2023-01-03 Minebea Mitsumi Inc. Strain gauge
US11454488B2 (en) 2017-09-29 2022-09-27 Minebea Mitsumi Inc. Strain gauge with improved stability
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US11262181B2 (en) 2018-04-03 2022-03-01 Minebea Mitsumi Inc. Strain gauge with increased resistor protection
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CN111919082B (en) * 2018-04-03 2023-08-22 美蓓亚三美株式会社 Strain gauge
US11747225B2 (en) 2018-04-05 2023-09-05 Minebea Mitsumi Inc. Strain gauge with improved stability and stress reduction
US11774303B2 (en) 2018-10-23 2023-10-03 Minebea Mitsumi Inc. Accelerator, steering wheel, six-axis sensor, engine, bumper and the like

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