JPH0575547A - Optical transmitter - Google Patents

Optical transmitter

Info

Publication number
JPH0575547A
JPH0575547A JP3230040A JP23004091A JPH0575547A JP H0575547 A JPH0575547 A JP H0575547A JP 3230040 A JP3230040 A JP 3230040A JP 23004091 A JP23004091 A JP 23004091A JP H0575547 A JPH0575547 A JP H0575547A
Authority
JP
Japan
Prior art keywords
semiconductor laser
circuit
input
input signal
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3230040A
Other languages
Japanese (ja)
Inventor
Atsushi Murata
淳 村田
Ichiro Yokota
一郎 横田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3230040A priority Critical patent/JPH0575547A/en
Publication of JPH0575547A publication Critical patent/JPH0575547A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the excessive emission of light and to increase the lifetime of an optical transmitter by inputting the two branched input signals to a laser driving circuit and a mark rate detecting circuit and inhibiting the emission of the laser light when the output of the mark rate detecting circuit is smaller than the prescribed value A or larger than the prescribed value B respectively. CONSTITUTION:The signal inputted to an input terminal 12 is branched into two signals and inputted to a semiconductor laser driving circuit 1 and a mark rate detecting circuit 4. Then the input signal is cut off, and the output value of the circuit 4 serving as an excessive DC signal higher than the high level of a no-input start signal or a prescribed input signal is smaller than the prescribed value A or larger than the prescribed value B. As a result, a cut-off circuit 3 works to cut off the supply of the driving current to a semiconductor laser 6 from the circuit 1. Then the light emission of the laser 6 is stopped. Thus the excessive emission of light is prevented and the lifetime is increased for the laser 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光ファイバ通信などに用
いて好適な光送信器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical transmitter suitable for use in optical fiber communication and the like.

【0002】[0002]

【従来の技術】光送信器に入力される信号により、半導
体レーザ出射光を強度変調する光送信器は、図3に代表
される回路構成で成立している。例えば、特開平2−1
55285号公報は、図3の回路構成を基本とした従来
技術である。
2. Description of the Related Art An optical transmitter for intensity-modulating emitted light from a semiconductor laser by a signal input to the optical transmitter has a circuit configuration represented by FIG. For example, Japanese Patent Laid-Open No. 2-1
Japanese Patent No. 55285 is a prior art based on the circuit configuration of FIG.

【0003】図中、1は、半導体レーザ駆動回路、2
は、半導体レーザ6、モニタフォトダイオード7、温度
検出素子9と熱電子冷却素子8を内蔵した半導体レーザ
モジュールである。5は、11の抵抗に流れるモニタフ
ォトダイオード7の電流により、半導体レーザ6の光出
力を安定化させる光出力安定化回路である。10は、温
度検出素子9と熱電子冷却素子8を用いて半導体レーザ
6の温度を安定化させる温度安定化回路である。半導体
レーザ出射光強度を変調する入力信号は、入力端子12
に印加され、半導体レーザ駆動回路1により光変調信号
電流と直流バイアス電流に変換され、半導体レーザ6に
供給される。直流バイアス電流値は、半導体レーザ6の
発振しきい値とほぼ等しい。また、変調信号電流値や直
流バイアス電流値は、光出力安定化回路5により制御さ
れる。
In the figure, 1 is a semiconductor laser drive circuit, 2 is
Is a semiconductor laser module having a semiconductor laser 6, a monitor photodiode 7, a temperature detecting element 9 and a thermoelectric cooling element 8 built therein. Reference numeral 5 is an optical output stabilizing circuit which stabilizes the optical output of the semiconductor laser 6 by the current of the monitor photodiode 7 flowing through the resistor 11. Reference numeral 10 is a temperature stabilization circuit that stabilizes the temperature of the semiconductor laser 6 by using the temperature detection element 9 and the thermoelectric cooling element 8. The input signal for modulating the intensity of the emitted light of the semiconductor laser is input to the input terminal 12
Is applied to the semiconductor laser drive circuit 1 and converted into an optical modulation signal current and a DC bias current by the semiconductor laser drive circuit 1 and supplied to the semiconductor laser 6. The DC bias current value is almost equal to the oscillation threshold value of the semiconductor laser 6. The modulation signal current value and the DC bias current value are controlled by the optical output stabilizing circuit 5.

【0004】以上の動作で、従来の光送信器は、半導体
レーザ出射光を強度変調し、光ファイバに伝送させる構
成となっていた。
With the above operation, the conventional optical transmitter has a structure in which the light emitted from the semiconductor laser is intensity-modulated and transmitted to the optical fiber.

【0005】[0005]

【発明が解決しようとする課題】従来の技術では、光送
信器への入力信号が断、無入力開放あるいは規定入力信
号ハイレベル以上の過大な直流信号となった時の半導体
レーザ出射光に対する制御機能について考慮がなされて
いない。従って、上記の時間内に半導体レーザを過大発
光させ、その発振しきい値の増大等により代表される半
導体レーザの電気光学的特性を劣化させること、さらに
は上記の時間内に光ファイバを伝搬した半導体レーザ出
射光を光受信局で受信した場合、光受信局単独では原因
追及不可能な符号誤りを発生させることが懸念された。
In the prior art, the control of the emitted light of the semiconductor laser when the input signal to the optical transmitter is cut off, no input is opened, or an excessive direct current signal is higher than the specified input signal high level is provided. No consideration is given to the function. Therefore, the semiconductor laser is made to emit excessive light within the above time, and the electro-optical characteristics of the semiconductor laser represented by the increase of the oscillation threshold thereof are deteriorated. When the light emitted from the semiconductor laser is received by the optical receiving station, it is feared that a code error that cannot be investigated by the optical receiving station alone may occur.

【0006】本発明の第一の目的は、上記時間内におい
て半導体レーザの発光を禁止し、半導体レーザの長寿命
化を図ることにある。
A first object of the present invention is to prevent the semiconductor laser from emitting light within the above-mentioned time period and to prolong the life of the semiconductor laser.

【0007】本発明の第二の目的は、上記時間内におい
て半導体レーザの発光を禁止し、光受信局に、光入力断
アラームを発生させることにある。
A second object of the present invention is to inhibit the light emission of the semiconductor laser within the above time period and to generate an optical input interruption alarm in the optical receiving station.

【0008】[0008]

【課題を解決するための手段】上記目標を達成するため
の手段を以下に記す。図3に記した光送信器に、半導体
レーザ駆動回路に入力される入力信号のパルス成分の積
分値を検出する機能を具備したマーク率検出回路と、半
導体レーザ駆動電流(前記光変調信号電流と直流バイア
ス電流)の半導体レーザ駆動回路から半導体レーザへの
供給をオンオフする遮断回路を設ける。マーク率検出回
路の出力がA<Bを満たす実数規定値A以下または、実
数規定値B以上となる時、遮断回路を動作させ、半導体
レーザの発光を禁止させることとする。
[Means for Solving the Problems] Means for achieving the above-mentioned goal will be described below. The optical transmitter shown in FIG. 3 includes a mark ratio detection circuit having a function of detecting an integrated value of a pulse component of an input signal input to the semiconductor laser drive circuit, and a semiconductor laser drive current (the optical modulation signal current A cutoff circuit for turning on / off the supply of the DC bias current) from the semiconductor laser drive circuit to the semiconductor laser is provided. When the output of the mark ratio detection circuit is equal to or less than the real number specified value A that satisfies A <B or is equal to or more than the real number specified value B, the cutoff circuit is operated to prohibit the emission of the semiconductor laser.

【0009】[0009]

【作用】前記課題を解決するための手段の作用は、以下
の通りである。
The operation of the means for solving the above problems is as follows.

【0010】マーク率検出回路の入力信号マーク率に対
する出力電圧特性を図4に記す。マーク率検出回路は、
入力信号のパルス成分の積分値を出力する。従って、E
CL,TTL等のインタフェースで直流成分を含んだ入
力信号をマーク率検出回路に入力した場合、その出力
は、図4中で実線で記したように、入力信号マーク率0
%から100%までの範囲でほぼ直線的に変化する特性
が得られる。
The output voltage characteristic of the mark ratio detection circuit with respect to the input signal mark ratio is shown in FIG. The mark ratio detection circuit
The integrated value of the pulse component of the input signal is output. Therefore, E
When an input signal containing a DC component is input to the mark ratio detection circuit through an interface such as CL or TTL, its output is 0, as indicated by the solid line in FIG.
A characteristic that changes substantially linearly in the range from 100% to 100% is obtained.

【0011】前述のように、光送信器に印加された入力
信号を二方向に分岐し、一方を半導体レーザ駆動回路
に、他方を上述の図4の特性をもつマーク率検出回路に
入力する。遮断回路とマーク率検出回路とを接続し、遮
断回路の動作条件として、その入力値(マーク率検出回
路出力値)が規定値A以下及び規定値B以上となったと
き、すなわち、マーク率がML以下MH以上となった
時、動作するよう遮断回路をコンパレータ等で構成す
る。
As described above, the input signal applied to the optical transmitter is branched into two directions, one is input to the semiconductor laser drive circuit, and the other is input to the mark ratio detection circuit having the characteristics shown in FIG. When the cutoff circuit and the mark rate detection circuit are connected and the input value (mark rate detection circuit output value) of the cutoff circuit is equal to or less than the specified value A and greater than or equal to the specified value B, that is, the mark rate is The cutoff circuit is configured by a comparator or the like so as to operate when the voltage becomes lower than ML and higher than MH.

【0012】以上の各機能を持つ回路で構成した光送信
器の入力端子に、マーク率が約50%にスクランブル化
された入力信号を印加した場合、マーク率検出回路の出
力値は、図4のCの近くの値となる。このとき、遮断回
路は動作せず、半導体レーザ駆動回路から半導体レーザ
に駆動電流が供給され、半導体レーザ出射光の強度変調
が実施される。
When an input signal scrambled to a mark ratio of about 50% is applied to the input terminal of the optical transmitter constituted by the circuits having the above-mentioned respective functions, the output value of the mark ratio detection circuit is as shown in FIG. It becomes a value near C of. At this time, the cutoff circuit does not operate, a drive current is supplied from the semiconductor laser drive circuit to the semiconductor laser, and the intensity modulation of the semiconductor laser emission light is performed.

【0013】しかし、入力信号が断、無入力開放あるい
は規定入力信号ハイレベル以上の過大な直流信号となっ
た場合、マーク率検出回路の出力値は、図4の規定値A
以下あるいは規定値B以上となり、遮断回路が動作し、
半導体レーザ駆動回路から半導体レ−ザへの駆動電流の
供給が遮断され、半導体レーザ出射光の発光が禁止され
る。
However, when the input signal is cut off, no input is opened, or an excessive DC signal is higher than the specified input signal high level, the output value of the mark ratio detection circuit is the specified value A in FIG.
Below or above the specified value B, the cutoff circuit operates,
The supply of the drive current from the semiconductor laser drive circuit to the semiconductor laser is cut off, and the emission of the semiconductor laser emission light is prohibited.

【0014】[0014]

【実施例】先ず、第一の実施例を図1及び図4により説
明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, a first embodiment will be described with reference to FIGS.

【0015】図1は、本発明の光送信器の回路構成例を
示すブロック図である。入力端子12に印加されたマー
ク率が約50%にスクランブル化された入力信号を二方
向に分岐する。一方を半導体レ−ザ駆動回路1に、他方
をマーク率検出回路4に入力する。図1の構成で、マ−
ク率検出回路4の入力信号マーク率に対する出力特性
は、図4中の実線の特性を示す。入力信号が、入力端子
13に印加されたとき、マーク率検出回路4の出力は、
図4のCの近くの値となり、この値が遮断回路3に入力
される。遮断回路3を入力レベルが規定値A以下規定値
B以上で動作するようにコンパレータ等で構成すると、
上の入力条件では、遮断回路3は非動作状態となり、半
導体レーザ駆動回路1から半導体レ−ザ6に駆動電流が
供給され、半導体レーザ出射光の強度変調が実施され
る。非変調光は、半導体レーザモジュール2に接続され
た光ファイバと半導体レーザモジュール2に内蔵された
モニタフォトダイオード7に入射される。モニタフォト
ダイオード7から半導体レーザ6の出射光強度にほぼ比
例したモニタ電流が流れ抵抗11によりモニタ電圧に変
換される。本モニタ電圧は、光出力安定化回路5に入力
され、モニタ電圧が一定となるように半導体レーザ駆動
電流が調整される。
FIG. 1 is a block diagram showing a circuit configuration example of an optical transmitter of the present invention. The input signal applied to the input terminal 12 is scrambled to have a mark ratio of about 50% and is branched in two directions. One is input to the semiconductor laser drive circuit 1 and the other is input to the mark ratio detection circuit 4. In the configuration of FIG.
The output characteristic with respect to the input signal mark rate of the black ratio detection circuit 4 shows the characteristic of the solid line in FIG. When the input signal is applied to the input terminal 13, the output of the mark ratio detection circuit 4 is
It becomes a value near C in FIG. 4, and this value is input to the cutoff circuit 3. When the cutoff circuit 3 is configured by a comparator or the like so that the input level operates at a specified value A or lower and a specified value B or higher,
Under the above input conditions, the cutoff circuit 3 is in a non-operating state, the drive current is supplied from the semiconductor laser drive circuit 1 to the semiconductor laser 6, and the intensity modulation of the semiconductor laser emission light is performed. The unmodulated light enters the optical fiber connected to the semiconductor laser module 2 and the monitor photodiode 7 built in the semiconductor laser module 2. A monitor current, which is substantially proportional to the intensity of light emitted from the semiconductor laser 6 from the monitor photodiode 7, is converted into a monitor voltage by the flow resistor 11. This monitor voltage is input to the optical output stabilizing circuit 5, and the semiconductor laser drive current is adjusted so that the monitor voltage becomes constant.

【0016】また、半導体レーザモジュール2には、半
導体レーザ6の温度を検出する温度検出素子9および熱
電子冷却素子8をも内蔵し、温度安定化回路10を介
し、半導体レーザ6の温度を一定温度に制御する。
The semiconductor laser module 2 also contains a temperature detecting element 9 for detecting the temperature of the semiconductor laser 6 and a thermoelectric cooling element 8, and the temperature of the semiconductor laser 6 is kept constant via a temperature stabilizing circuit 10. Control to temperature.

【0017】入力信号が断、無入力開放あるいは規定入
力信号ハイレベル以上の過大な直流信号となった場合、
マーク率検出回路4の出力値は、図4の規定値A以下あ
るいは規定値B以上となり、遮断回路3が動作し、半導
体レーザ駆動回路4から半導体レーザ6への駆動電流の
供給が遮断され、半導体レーザ出射光の発光が禁止され
る。
When the input signal is cut off, no input is opened, or an excessive direct current signal is higher than the specified input signal high level,
The output value of the mark ratio detection circuit 4 becomes equal to or less than the specified value A or the specified value B in FIG. 4, the cutoff circuit 3 operates, and the supply of the drive current from the semiconductor laser drive circuit 4 to the semiconductor laser 6 is cut off. Emission of light emitted from the semiconductor laser is prohibited.

【0018】図2は、半導体レーザモジュール2として
温度検出素子9および熱電子冷却素子8を内蔵しない半
導体レーザモジュールを用いた実施例一に相当する回路
構成図である。本実施例二でも実施例一と同等の機能が
実現できる。
FIG. 2 is a circuit diagram of a semiconductor laser module 2 corresponding to the first embodiment using a semiconductor laser module which does not include the temperature detecting element 9 and the thermoelectric cooling element 8. The second embodiment can also realize the same function as that of the first embodiment.

【0019】また、マーク率検出回路4の入力信号マー
ク率に対する出力特性として、図5の特性をもつものを
用いても実施例一,二と同等の機能が実現できる。
Further, even if the output characteristic of the mark rate detection circuit 4 with respect to the input signal mark rate has the characteristic shown in FIG. 5, the function equivalent to that of the first and second embodiments can be realized.

【0020】[0020]

【発明の効果】本発明によれば、入力信号が断、無入力
開放あるいは規定入力信号ハイレベル以上の過大な直流
信号となった場合、マーク率検出回路の出力値は、規定
値A以下あるいは規定値B以上となり、遮断回路が動作
し、半導体レーザ駆動回路から半導体レーザ6への駆動
電流の供給が遮断され、半導体レーザ出射光の発光が禁
止され、この時間内で半導体レーザは過大発光すること
なく、半導体レーザの長寿命化を図ることができる。
According to the present invention, when the input signal is cut off, no input is opened, or an excessive direct current signal is above the specified input signal high level, the output value of the mark ratio detection circuit is below the specified value A or When the value becomes equal to or more than the specified value B, the cutoff circuit operates, the supply of the drive current from the semiconductor laser drive circuit to the semiconductor laser 6 is cut off, the emission of the semiconductor laser emission light is prohibited, and the semiconductor laser emits excessive light within this time. Without increasing the life of the semiconductor laser.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の光送信回路のブロック図、FIG. 1 is a block diagram of an optical transmission circuit according to an embodiment of the present invention,

【図2】本発明の実施例2の光送信回路のブロック図、FIG. 2 is a block diagram of an optical transmission circuit according to a second embodiment of the present invention,

【図3】従来技術例の光送信回路のブロック図、FIG. 3 is a block diagram of a conventional optical transmission circuit,

【図4】マーク率検出回路の入力信号マーク率に対する
第一の出力特性、
FIG. 4 is a first output characteristic with respect to an input signal mark rate of a mark rate detection circuit,

【図5】マーク率検出回路の入力信号マーク率に対する
第二の出力特性図。
FIG. 5 is a second output characteristic diagram with respect to an input signal mark rate of the mark rate detection circuit.

【符号の説明】[Explanation of symbols]

1…半導体レーザ駆動回路, 2…半導体レーザモジュ−ル, 3…遮断回路, 4…マーク率検出回路, 5…光出力安定化回路, 6…半導体レーザ, 7…モニタフォトダイオ−ド, 8…熱電子冷却素子, 9…温度検出素子, 10…温度安定化回路, 11…抵抗, 12…入力端子。 DESCRIPTION OF SYMBOLS 1 ... Semiconductor laser drive circuit, 2 ... Semiconductor laser module, 3 ... Cutoff circuit, 4 ... Mark ratio detection circuit, 5 ... Optical output stabilization circuit, 6 ... Semiconductor laser, 7 ... Monitor photo diode, 8 ... Heat Electronic cooling element, 9 ... Temperature detecting element, 10 ... Temperature stabilizing circuit, 11 ... Resistor, 12 ... Input terminal.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】半導体レーザと、入力信号により前記半導
体レーザの出射光を強度変調する光変調信号電流と直流
バイアス電流とから成る半導体レーザ駆動電流を前記半
導体レーザに供給する半導体レーザ駆動回路と、入力信
号のパルス成分の積分値を検出するマーク率検出回路
と、前記半導体レーザ駆動電流の供給をオンオフする遮
断回路とから成る光送信器において、入力信号を二分岐
し、一方を前記半導体レーザ駆動回路に入力し、他方を
前記マーク率検出回路に入力し、前記マーク率検出回路
の出力が、A<Bを満たす実数規定値A以下または実数
規定値B以上となる時、前記遮断回路を動作させ、前記
半導体レーザの発光を禁止する機能を設けたことを特徴
とする光送信器。
1. A semiconductor laser, and a semiconductor laser drive circuit for supplying to the semiconductor laser a semiconductor laser drive current composed of an optical modulation signal current for intensity-modulating emitted light of the semiconductor laser according to an input signal and a DC bias current. In an optical transmitter including a mark ratio detection circuit for detecting an integrated value of a pulse component of an input signal and a cutoff circuit for turning on / off the supply of the semiconductor laser drive current, an input signal is bifurcated and one of them is driven by the semiconductor laser. When inputting to the circuit and inputting the other to the mark rate detecting circuit, and the output of the mark rate detecting circuit becomes a real number specified value A or less satisfying A <B or a real number specified value B or more, the cutoff circuit is operated. And an optical transmitter provided with a function of inhibiting light emission of the semiconductor laser.
JP3230040A 1991-09-10 1991-09-10 Optical transmitter Pending JPH0575547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3230040A JPH0575547A (en) 1991-09-10 1991-09-10 Optical transmitter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3230040A JPH0575547A (en) 1991-09-10 1991-09-10 Optical transmitter

Publications (1)

Publication Number Publication Date
JPH0575547A true JPH0575547A (en) 1993-03-26

Family

ID=16901625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3230040A Pending JPH0575547A (en) 1991-09-10 1991-09-10 Optical transmitter

Country Status (1)

Country Link
JP (1) JPH0575547A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147446A (en) * 1993-11-25 1995-06-06 Matsushita Electric Ind Co Ltd Ld driving circuit of optical fiber module
GB2322025A (en) * 1994-05-20 1998-08-12 Fujitsu Ltd Optical transmission apparatus with means for detecting an anomalous mark rate
EP1246327A2 (en) * 2001-03-16 2002-10-02 NTT Electronics Corporation Optical output control circuit for obtaining stable optical output power
US6480314B1 (en) 1998-04-27 2002-11-12 Nec Corporation Optical transmitter
JP2003110505A (en) * 2001-09-27 2003-04-11 Sumitomo Electric Ind Ltd Optical transmitter and wavelength division multiplexing transmission system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07147446A (en) * 1993-11-25 1995-06-06 Matsushita Electric Ind Co Ltd Ld driving circuit of optical fiber module
GB2322025A (en) * 1994-05-20 1998-08-12 Fujitsu Ltd Optical transmission apparatus with means for detecting an anomalous mark rate
GB2322025B (en) * 1994-05-20 1998-11-04 Fujitsu Ltd Optical transmission apparatus
US6480314B1 (en) 1998-04-27 2002-11-12 Nec Corporation Optical transmitter
EP1246327A2 (en) * 2001-03-16 2002-10-02 NTT Electronics Corporation Optical output control circuit for obtaining stable optical output power
EP1246327A3 (en) * 2001-03-16 2005-01-12 NTT Electronics Corporation Optical output control circuit for obtaining stable optical output power
JP2003110505A (en) * 2001-09-27 2003-04-11 Sumitomo Electric Ind Ltd Optical transmitter and wavelength division multiplexing transmission system
JP4569064B2 (en) * 2001-09-27 2010-10-27 住友電気工業株式会社 Optical transmitter and wavelength division multiplexing transmission system

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