JPH0574766A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a junction leakage caused by aluminum spikes in a micro transistor located under a wide aluminum wiring. CONSTITUTION:When a diffusion layer of a transistor provided with a contact window is arranged under a wide aluminum wiring, the blanked pattern of aluminum wirings 1-3 is provided along the contact windows 6-8 in an axial direction of 110. Therefore, an aluminum wiring extending in an axial direction of 110 is lessened in amount. Therefore, an aluminum wiring extending in the axial direction of 110 is lessened in quantity, whereby aluminum spikes are prevented from being generated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device which prevents aluminum spikes.

[0002]

2. Description of the Related Art Conventionally, aluminum has been widely used as a wiring material for semiconductor devices. However, when heat treatment is applied to make an ohmic contact, a so-called aluminum spike may occur and the pn junction may be destroyed. This is because the silicon in the impurity diffusion layer is dissolved in aluminum to form a pit, and the aluminum enters there to form an aluminum spike.

In recent years, as semiconductor integrated circuit devices have become finer and transistor junctions have become shallower, the occurrence of aluminum spikes becomes a problem. As a measure for preventing the generation of aluminum spikes, it is effective to use an Al-Si alloy or a barrier metal.

On the other hand, in a semiconductor device which requires a large current, a wide metal wiring is used in order to improve the reliability of the wiring portion. As the wiring material, aluminum is still preferable because it has excellent electrical characteristics and mass productivity. Further, with the progress of integration of semiconductor devices, it is inevitable to reduce the size of transistors and to limit the arrangement.

As described above, there are cases where fine transistors are arranged under a wide aluminum wiring.

[0006]

However, in the above-mentioned conventional structure, aluminum spikes are generated at the edge portion of the contact window and reach the outside of the impurity diffusion layer making contact, resulting in a junction leak. Had.

The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor device capable of preventing a junction leak due to an aluminum spike even if an aluminum wiring is used.

[0008]

In order to achieve this object, a semiconductor device of the present invention is provided with an impurity diffusion layer having a contact window such as a transistor under a large-area aluminum wiring. The structure is such that a pattern of aluminum wiring is provided along the contact window in the <110> axis direction.

[0009]

With the above structure, the generation of aluminum spikes can be prevented by reducing the amount of aluminum in the <110> axis direction.

[0010]

[Example] Analysis of the edge portion of the contact window where the aluminum spike occurred revealed that the location where the aluminum spike occurred had directionality. That is, when a (111) plane silicon substrate is used, aluminum spikes are generated only in the edge portion of the contact window in the <110> axis direction, and aluminum spikes are not generated in the right angle direction and the <211> axis direction. I was not able to admit. Although this phenomenon has not been clarified yet, it is speculated that the precipitation of silicon may depend on the crystal axis direction.

According to the present invention, the generation of aluminum spikes is prevented by reducing the amount of aluminum in the <110> axis direction in which silicon is likely to precipitate.

An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention. In FIG. 1, 1 is a wide aluminum wiring connected to an emitter electrode, 2 is an aluminum wiring connected to a base electrode, 3 is an aluminum wiring connected to a collector electrode, 4 is an emitter, 5 is a base, and 6 is an emitter contact window. , 7 are base contact windows, and 8 is a collector contact window.

In the wide aluminum wiring 1, by providing the aluminum wiring punching pattern 9 along the contact window and in the <110> axis direction, the amount of aluminum in the substantially same direction is reduced, and aluminum of silicon is used. It is possible to suppress melt precipitation into the inside. Therefore, the aluminum spike that reaches the outside of the impurity diffusion layer making contact is not generated, and the junction leak can be prevented.

[0014]

As described above, according to the present invention, the generation of aluminum spikes can be prevented by providing the aluminum wiring removal pattern in the <110> axis direction where aluminum spikes were easily generated in wide aluminum wirings. Then
It is possible to prevent the junction leak.

[Brief description of drawings]

FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention.

[Explanation of symbols]

 1 Aluminum wiring connected to the emitter electrode 2 Aluminum wiring connected to the base electrode 3 Aluminum wiring connected to the collector electrode 4 Emitter 5 Base 6 Emitter contact window 7 Base contact window 8 Collector contact window 9 Aluminum wiring removal pattern

Claims (1)

[Claims] 1. An aluminum wiring layer for electrical connection through a contact window provided in a predetermined region on a semiconductor substrate, wherein a wide portion of the aluminum wiring layer is provided along the contact window and <110> A semiconductor device having a punched pattern formed in the axial direction.