JPH0574029B2 - - Google Patents
Info
- Publication number
- JPH0574029B2 JPH0574029B2 JP63053520A JP5352088A JPH0574029B2 JP H0574029 B2 JPH0574029 B2 JP H0574029B2 JP 63053520 A JP63053520 A JP 63053520A JP 5352088 A JP5352088 A JP 5352088A JP H0574029 B2 JPH0574029 B2 JP H0574029B2
- Authority
- JP
- Japan
- Prior art keywords
- energy
- radiation
- detection element
- semiconductor
- characteristic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000035945 sensitivity Effects 0.000 claims description 15
- 231100000987 absorbed dose Toxicity 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63053520A JPH01227983A (ja) | 1988-03-09 | 1988-03-09 | 放射線線量測定器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63053520A JPH01227983A (ja) | 1988-03-09 | 1988-03-09 | 放射線線量測定器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01227983A JPH01227983A (ja) | 1989-09-12 |
| JPH0574029B2 true JPH0574029B2 (enrdf_load_stackoverflow) | 1993-10-15 |
Family
ID=12945097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63053520A Granted JPH01227983A (ja) | 1988-03-09 | 1988-03-09 | 放射線線量測定器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01227983A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2873270B2 (ja) * | 1994-05-17 | 1999-03-24 | アロカ株式会社 | 放射線検出器 |
| US6013916A (en) * | 1997-07-23 | 2000-01-11 | The Regents Of The University Of Michigan | Flat panel dosimeter |
-
1988
- 1988-03-09 JP JP63053520A patent/JPH01227983A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01227983A (ja) | 1989-09-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071015 Year of fee payment: 14 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081015 Year of fee payment: 15 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081015 Year of fee payment: 15 |