JPH0572470B2 - - Google Patents
Info
- Publication number
- JPH0572470B2 JPH0572470B2 JP62150376A JP15037687A JPH0572470B2 JP H0572470 B2 JPH0572470 B2 JP H0572470B2 JP 62150376 A JP62150376 A JP 62150376A JP 15037687 A JP15037687 A JP 15037687A JP H0572470 B2 JPH0572470 B2 JP H0572470B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- sputtering
- target
- center
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 238000005477 sputtering target Methods 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 14
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 238000002441 X-ray diffraction Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- -1 Ar + ) Chemical class 0.000 description 1
- 229910017488 Cu K Inorganic materials 0.000 description 1
- 229910017541 Cu-K Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013076 target substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15037687A JPS63312975A (ja) | 1987-06-17 | 1987-06-17 | アルミニウムスパツタリングタ−ゲツト |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15037687A JPS63312975A (ja) | 1987-06-17 | 1987-06-17 | アルミニウムスパツタリングタ−ゲツト |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63312975A JPS63312975A (ja) | 1988-12-21 |
| JPH0572470B2 true JPH0572470B2 (zh) | 1993-10-12 |
Family
ID=15495641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15037687A Granted JPS63312975A (ja) | 1987-06-17 | 1987-06-17 | アルミニウムスパツタリングタ−ゲツト |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63312975A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2928330B2 (ja) * | 1990-05-11 | 1999-08-03 | 株式会社神戸製鋼所 | 光メディア用スパッタリングターゲット溶製材 |
| US5500301A (en) | 1991-03-07 | 1996-03-19 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| JP2857015B2 (ja) * | 1993-04-08 | 1999-02-10 | 株式会社ジャパンエナジー | 高純度アルミニウムまたはその合金からなるスパッタリングターゲット |
| US5772860A (en) | 1993-09-27 | 1998-06-30 | Japan Energy Corporation | High purity titanium sputtering targets |
| JP3720456B2 (ja) * | 1996-05-17 | 2005-11-30 | キヤノン株式会社 | 光起電力素子 |
| US9752228B2 (en) * | 2009-04-03 | 2017-09-05 | Applied Materials, Inc. | Sputtering target for PVD chamber |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5558369A (en) * | 1978-10-20 | 1980-05-01 | Nec Corp | Preparation of electric conductive film of aluminum-silicon alloy |
-
1987
- 1987-06-17 JP JP15037687A patent/JPS63312975A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5558369A (en) * | 1978-10-20 | 1980-05-01 | Nec Corp | Preparation of electric conductive film of aluminum-silicon alloy |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63312975A (ja) | 1988-12-21 |
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