JPH0567714A - Device and method for removing foreign matter on semiconductor device - Google Patents
Device and method for removing foreign matter on semiconductor deviceInfo
- Publication number
- JPH0567714A JPH0567714A JP3226667A JP22666791A JPH0567714A JP H0567714 A JPH0567714 A JP H0567714A JP 3226667 A JP3226667 A JP 3226667A JP 22666791 A JP22666791 A JP 22666791A JP H0567714 A JPH0567714 A JP H0567714A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- brushing
- foreign matter
- pressure gas
- static electricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims description 14
- 230000001680 brushing effect Effects 0.000 claims abstract description 49
- 230000003068 static effect Effects 0.000 claims abstract description 27
- 230000005611 electricity Effects 0.000 claims abstract description 23
- 150000002500 ions Chemical class 0.000 claims abstract description 20
- 210000004209 hair Anatomy 0.000 claims abstract description 14
- 239000000428 dust Substances 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims 2
- 239000011347 resin Substances 0.000 abstract description 25
- 229920005989 resin Polymers 0.000 abstract description 25
- 239000000843 powder Substances 0.000 abstract description 11
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 3
- 238000007664 blowing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/16—Rigid blades, e.g. scrapers; Flexible blades, e.g. wipers
- B08B1/165—Scrapers
Landscapes
- Cleaning In General (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、リードフレーム状半導
体装置のリード成形工程で発生する異物を除去する装置
およびその除去方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a method for removing foreign matter generated in a lead molding process of a lead frame type semiconductor device.
【０００２】[0002]
【従来の技術】図２は一般的なリードフレーム状半導体
装置のリード成形工程を示す平面図と側面図である。同
図において、１はリードフレーム状半導体装置、１ａは
リードフレーム枠、１ｂは樹脂封止されたパッケージ、
１ｃは電極となるリード、１ｄはリードフレーム枠１ａ
とリード１ｃとをつなぐタイバー、１ｅは樹脂封止時に
残留した樹脂片、１ｆは樹脂片１ｅの断片、１ｇは樹脂
粉である。2. Description of the Related Art FIG. 2 is a plan view and a side view showing a lead forming process of a general lead frame type semiconductor device. In the figure, 1 is a lead frame semiconductor device, 1a is a lead frame frame, 1b is a resin-sealed package,
1c is a lead serving as an electrode, 1d is a lead frame frame 1a
A tie bar connecting the lead 1c with the lead 1c, 1e is a resin piece left when the resin is sealed, 1f is a fragment of the resin piece 1e, and 1g is a resin powder.
【０００３】図３は、上述したリードフレーム状半導体
装置１の成形工程で発生する異物を除去する従来の半導
体装置の異物除去装置の平面図、図４は同じく側面図で
ある。これらの図において、２はリードフレーム状半導
体装置１を案内する案内レール、２９はリードフレーム
状半導体装置１のタイバー１ｄを切断する成形装置、３
３は成形装置２９の次工程に設けられた異物除去装置で
ある。この異物除去装置３３は、ブラッシング毛３０ａ
を有するブラッシングユニット３０、ブラッシングユニ
ット３０を取付ける取付け板１０、取付け板１０が連結
されブラッシングユニット３０の上下動を案内するガイ
ド部材１１、ガイド部材１１を取付ける基台１２、取付
け板１０を常時下方に付勢するスプリング１３、取付け
板１０に回転自在に支持された伝達ローラ１４、伝達ロ
ーラ１４に当接し高低差を有する回転カム１５、回転カ
ム１５を回転駆動するモータ１６およびモータ１６が取
り付けられ基台１２に固定されるモータ取付け板１７か
らなる。FIG. 3 is a plan view of a conventional foreign matter removing device for a semiconductor device, which removes foreign matter generated in the molding process of the lead frame semiconductor device 1, and FIG. 4 is a side view of the same. In these drawings, 2 is a guide rail for guiding the lead frame-shaped semiconductor device 1, 29 is a molding device for cutting the tie bar 1d of the lead frame-shaped semiconductor device 1, 3
Reference numeral 3 denotes a foreign matter removing device provided in the next step of the molding device 29. The foreign matter removing device 33 is provided with the brushing hair 30a.
The brushing unit 30 having the above, a mounting plate 10 for mounting the brushing unit 30, a guide member 11 for connecting the mounting plate 10 to guide the vertical movement of the brushing unit 30, a base 12 for mounting the guide member 11, and the mounting plate 10 are always downward. A spring 13 for urging, a transmission roller 14 rotatably supported by the mounting plate 10, a rotary cam 15 contacting the transmission roller 14 and having a height difference, a motor 16 for rotationally driving the rotary cam 15, and a motor 16 are mounted. It comprises a motor mounting plate 17 fixed to the base 12.
【０００４】以下、動作を説明する。リードフレーム状
半導体装置１が案内レール２にて案内され所定量づつ搬
送され、成形装置２９内に送り込まれ、成形装置２９の
上下動により、前述したように半導体装置１のタイバー
１ｄが切断される。このとき、タイバー１ｄまで延在し
ていた樹脂片１ｅはタイバー１ｄの切断と共に切損され
るが、一部は樹脂片１ｆとしてリード１ｃに残存し、他
の一部は樹脂粉１ｇとしてパッケージ１ｂ上あるいはリ
ード１ｃ上に付着する。このような状態で成形が完了し
た半導体装置１は、次の異物除去装置３３内の所定の位
置に送られると、モータ１６が回転し、回転カム１５が
回転する。回転カム１５の高低差が伝達ローラ１４に伝
達され、取付け板１０に取付けられたブラッシングユニ
ット３０が、ガイド部材１１に案内されて上下動する。
この動作にともない、ブラッシング毛３０ａは、半導体
装置１のリード１ｃ間、リード１ｃ上、パッケージ１ｂ
上あるいはリードフレーム１ａ上をブラッシング動作を
して、残存付着する樹脂片１ｆあるいは樹脂粉１ｇを下
方に掃き落とす。The operation will be described below. The lead frame-shaped semiconductor device 1 is guided by the guide rails 2 and conveyed by a predetermined amount, and is fed into the molding device 29, and the tie bar 1d of the semiconductor device 1 is cut by the vertical movement of the molding device 29 as described above. .. At this time, the resin piece 1e extending up to the tie bar 1d is cut off along with the cutting of the tie bar 1d, but a part of the resin piece 1e remains on the lead 1c as a resin piece 1f and the other part remains as a resin powder 1g in the package 1b. It adheres to the top or the lead 1c. When the semiconductor device 1 that has been molded in such a state is sent to a predetermined position in the next foreign matter removing device 33, the motor 16 rotates and the rotating cam 15 rotates. The height difference of the rotary cam 15 is transmitted to the transmission roller 14, and the brushing unit 30 mounted on the mounting plate 10 is guided by the guide member 11 to move up and down.
Along with this operation, the brushing bristles 30a are formed between the leads 1c of the semiconductor device 1, on the leads 1c, and in the package 1b.
A brushing operation is performed on the top or the lead frame 1a, and the remaining resin piece 1f or the resin powder 1g adhering thereto is swept down.
【０００５】[0005]
【発明が解決しようとする課題】従来の半導体装置は以
上のように構成されていたので、ブラッシング時に樹脂
片、樹脂粉が舞い上がりあるいはブラッシング毛間に残
り、このため、再び樹脂片、樹脂粉が半導体装置上に付
着し、次工程の成形時これら樹脂片、樹脂粉の打ち込み
等による不良を発生させる。また、ブラッシング毛のブ
ラッシング動作にともないブラッシング毛がパッケージ
と摺動し、これにより静電気が発生し、このため、樹脂
粉が付着し易くなると共に、静電気により半導体装置を
電気的に破壊する等の問題があった。本発明は上述した
従来の問題点に鑑みてなされたものであり、その目的と
するところは、異物を除去の向上を図るとともに、半導
体装置の電気的破壊を防止した半導体装置の異物除去装
置およびその方法を提供することにある。Since the conventional semiconductor device is configured as described above, the resin pieces and the resin powder fly up during brushing or remain between the brushing hairs. It adheres to the semiconductor device and causes defects due to driving of these resin pieces and resin powder during molding in the next step. In addition, the brushing hair slides on the package along with the brushing operation of the brushing hair, which causes static electricity, which makes it easier for resin powder to adhere to the brush and also electrically damages the semiconductor device. was there. The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to improve foreign matter removal and to prevent the semiconductor device from being electrically damaged. To provide that method.
【０００６】[0006]
【課題を解決するための手段】この目的を達成するため
に、本発明に係る半導体装置の異物除去装置は、リード
フレーム状半導体装置のリード成形工程で発生し半導体
装置上および半導体装置近傍に残存付着する異物を上下
動するブラッシング毛で除去する装置であって、前記ブ
ラッシング毛が取り付けられこのブラッシング毛に隣接
して穿設された吹き出し孔とこの吹き出し孔に連通した
中空通路とを有するブラッシングプレートと、このブラ
ッシングプレートの中空通路に静電気除去イオンを含む
高圧気体を導入する静電気除去イオン発生器と、前記ブ
ラッシング毛と半導体装置を挟んで配設された集塵ダク
トとを備えたものである。また、本発明に係る半導体装
置の異物除去方法は、リードフレーム状半導体装置のリ
ード成形工程で発生し半導体装置上および半導体装置近
傍に残存付着する異物を上下動するブラッシング毛で除
去する方法であって、前記ブラッシング毛の上下動作時
に静電気除去イオンを含む高圧気体を半導体装置および
半導体装置の近傍に吹き付けると共に、この高圧気体の
吹き付けによって残存付着した異物を集塵するようにし
たものである。In order to achieve this object, a foreign matter removing apparatus for a semiconductor device according to the present invention is generated in a lead forming process of a lead frame semiconductor device and remains on and near the semiconductor device. A brushing plate for removing adhering foreign matter by brushing bristles that move up and down, the brushing bristles having the blushing bristles attached thereto and formed adjacent to the bristling bristles, and a hollow passage communicating with the buffing holes. And a static electricity removing ion generator for introducing a high-pressure gas containing static electricity removing ions into the hollow passage of the brushing plate, and a dust collecting duct arranged with the brushing bristles and the semiconductor device interposed therebetween. Further, the method of removing foreign matter from a semiconductor device according to the present invention is a method of removing foreign matter that is generated in the lead forming process of a lead frame-shaped semiconductor device and remains on and near the semiconductor device by brushing hair that moves up and down. Thus, when the brushing bristles are moved up and down, a high-pressure gas containing static electricity-removing ions is blown to the semiconductor device and the vicinity of the semiconductor device, and the high-pressure gas is blown to collect the remaining foreign matters.
【０００７】[0007]
【作用】本発明においては、ブラッシング毛で除去が不
完全な異物は高圧気体で除去され、集塵ダクトで集塵さ
れる。また、静電気除去イオンが静電気の発生を防ぐ。In the present invention, the foreign matter which is not completely removed by the brushing hair is removed by the high pressure gas and collected by the dust collecting duct. Also, static electricity removing ions prevent the generation of static electricity.
【０００８】[0008]
【実施例】以下、図に基づいて本発明の一実施例を説明
する。図１は本発明に係る半導体装置の異物除去装置の
側断面図である。同図において、従来技術と同一の構成
については、同一の符号を付しており、詳細な説明を省
略する。５は、中空通路５ａおよび高圧気体接続口５ｂ
を有する静電気除去イオン発生器である。ブラッシング
毛９が取付けられたブラッシングプレート８には、ブラ
ッシング毛９に隣接して穿設された複数の吹き出し孔８
ｂと、この吹き出し孔８ｂに連通して形成された中空通
路８ａが設けられている。９は、静電気除去イオン発生
器５の中空通路５ａとブラッシングプレート８の中空通
路８ａを連通する継手である。ブラッシング毛９と半導
体装置１を挟んで、集塵口２０が案内レール２に取付け
られ、この集塵口２０には集塵ダクト２１が接続されて
いる。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a side sectional view of a foreign matter removing device for a semiconductor device according to the present invention. In the figure, the same components as those of the conventional technique are designated by the same reference numerals, and detailed description thereof will be omitted. 5 is a hollow passage 5a and a high-pressure gas connection port 5b
Is a static electricity removing ion generator having. The brushing plate 8 to which the brushing bristles 9 are attached has a plurality of blowing holes 8 formed adjacent to the brushing bristles 9.
b, and a hollow passage 8a formed so as to communicate with the blowout hole 8b. Reference numeral 9 denotes a joint that connects the hollow passage 5a of the static eliminator ion generator 5 and the hollow passage 8a of the brushing plate 8. A dust collection port 20 is attached to the guide rail 2 with the brushing bristles 9 and the semiconductor device 1 interposed therebetween, and a dust collection duct 21 is connected to the dust collection port 20.
【０００９】以下、動作を説明する。半導体装置１が成
形工程を経てブラッシング毛９の下方位置に搬送される
と、モータ１６が回転し、同時に、高圧気体が静電気除
去イオン発生器５の高圧気体接続口５ｂから導入され
る。モータ１６の回転によって、ブラッシングプレート
８が上下動し、これにともないブラッシング毛９が半導
体装置１の樹脂片および樹脂粉を掃き落とす動作をす
る。高圧気体接続口５ｂから導入された高圧気体は中空
通路５ａ、中空通路８ａを通過して、吹き出し口８ｂか
ら半導体装置１および半導体装置１の近傍に吹き出さ
れ、ブラッシング毛９によって掃き落とされなかった残
留樹脂片１ｆおよび残留樹脂粉１ｇを集塵ダクト２１に
吹き飛ばす。このとき、吹き出される高圧気体には、静
電気除去イオン発生器５から発生した静電気除去イオン
も混合しており、ブラッシング毛９のブラッシング動作
によって発生する静電気は、静電気除去イオンによって
中和され、半導体装置１に静電気が発生するのを防止さ
れる。なお、本実施例においては、静電気除去イオン発
生器５とブラッシングプレート８とを個別に設けて継手
で接続したが、ブラッシングプレート内に静電気除去イ
オン発生手段を装備して、２つの機能を１つにまとめて
もよいことはいうまでもない。The operation will be described below. When the semiconductor device 1 is conveyed to the position below the brushing bristles 9 through the molding process, the motor 16 rotates and at the same time, high-pressure gas is introduced from the high-pressure gas connection port 5b of the static electricity removing ion generator 5. The brushing plate 8 moves up and down by the rotation of the motor 16, and the brushing bristles 9 perform an operation of sweeping off the resin pieces and resin powder of the semiconductor device 1 accordingly. The high-pressure gas introduced from the high-pressure gas connection port 5b passes through the hollow passages 5a and 8a, is blown out from the blow-out port 8b to the semiconductor device 1 and the vicinity of the semiconductor device 1, and is not swept away by the brushing bristles 9. The residual resin piece 1f and the residual resin powder 1g are blown off to the dust collection duct 21. At this time, the high-pressure gas blown out is also mixed with static electricity removing ions generated from the static electricity removing ion generator 5, and the static electricity generated by the brushing operation of the brushing bristles 9 is neutralized by the static electricity removing ions, so that the semiconductor The device 1 is prevented from generating static electricity. In this embodiment, the static electricity removing ion generator 5 and the brushing plate 8 are individually provided and connected by a joint. However, the static electricity removing ion generating means is provided in the brushing plate to provide two functions. It goes without saying that you may put together in.
【００１０】[0010]
【発明の効果】以上説明したように本発明によれば、ブ
ラッシング毛の上下動作時に静電気除去イオンを含む高
圧気体を半導体装置および半導体装置の近傍に吹き付け
ると共に、この高圧気体の吹き付けによって残存付着し
た異物を集塵するようにしたので、ブラッシング毛によ
って掃き落とされなかった残留樹脂片および残留樹脂粉
を集塵ダクトに吹き飛ばすことができ、このため半導体
装置の成形時に発生する異物の除去の向上を図ることが
できる。また、ブラッシング動作によって発生する静電
気を静電気除去イオンによって中和することができるの
で、半導体装置を電気的に破壊することがない効果があ
る。As described above, according to the present invention, a high-pressure gas containing static electricity removing ions is blown to the semiconductor device and the vicinity of the semiconductor device when the brushing bristles are moved up and down, and the high-pressure gas is left to adhere. Since foreign matter is collected, it is possible to blow away the residual resin pieces and residual resin powder that were not swept away by the brushing bristles to the dust collection duct, which improves the removal of foreign matter generated during molding of the semiconductor device. Can be planned. Further, since static electricity generated by the brushing operation can be neutralized by static electricity removing ions, there is an effect that the semiconductor device is not electrically damaged.
【図１】本発明に係る半導体装置の異物除去装置の側断
面図である。FIG. 1 is a side sectional view of a foreign matter removing device for a semiconductor device according to the present invention.
【図２】一般的なリードフレーム状半導体装置の成形工
程を示す平面図と側面図である。2A and 2B are a plan view and a side view showing a molding process of a general lead frame semiconductor device.
【図３】従来の半導体装置の異物除去装置の平面図であ
る。FIG. 3 is a plan view of a conventional foreign matter removing device for a semiconductor device.
【図４】従来の半導体装置の異物除去装置の側面図であ
る。FIG. 4 is a side view of a conventional foreign matter removing device for a semiconductor device.
１ リードフレーム状半導体装置 １ｆ 樹脂片 １ｇ 樹脂粉 ５ 静電気除去イオン発生器 ８ ブラッシングプレート ９ ブラッシング毛 ２０ 集塵口 ２１ 集塵ダクト 1 Lead Frame Semiconductor Device 1f Resin Piece 1g Resin Powder 5 Static Electricity Removal Ion Generator 8 Brushing Plate 9 Brushing Hair 20 Dust Collection Port 21 Dust Collection Duct
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/56 Ｄ 8617−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 21/56 D 8617-4M
Claims (2)
形工程で発生し半導体装置上および半導体装置近傍に残
存付着する異物を上下動するブラッシング毛で除去する
装置において、前記ブラッシング毛が取り付けられこの
ブラッシング毛に隣接して穿設された吹き出し孔とこの
吹き出し孔に連通した中空通路とを有するブラッシング
プレートと、このブラッシングプレートの中空通路に静
電気除去イオンを含む高圧気体を導入する静電気除去イ
オン発生器と、前記ブラッシング毛と半導体装置を挟ん
で配設された集塵ダクトとを備えたことを特徴とする半
導体装置の異物除去装置。1. A device for removing foreign matter, which is generated in a lead forming step of a lead frame semiconductor device and remains on and near a semiconductor device, by brushing hair that moves up and down, wherein the brushing hair is attached. A brushing plate having a blow hole formed adjacent to the blow hole and a hollow passage communicating with the blow hole, and a static electricity removing ion generator for introducing high-pressure gas containing static electricity removing ions into the hollow passage of the brushing plate, A foreign matter removing device for a semiconductor device, comprising: the brushing bristles and a dust collecting duct arranged so as to sandwich the semiconductor device.
形工程で発生し半導体装置上および半導体装置近傍に残
存付着する異物を上下動するブラッシング毛で除去する
方法において、前記ブラッシング毛の上下動作時に静電
気除去イオンを含む高圧気体を半導体装置および半導体
装置の近傍に吹き付けると共に、この高圧気体の吹き付
けによって残存付着した異物を集塵するようにしたこと
を特徴とする半導体装置の異物除去方法。2. A method of removing foreign matter, which is generated in a lead forming step of a lead frame-shaped semiconductor device and remains on and near the semiconductor device by brushing hair that moves up and down, removing static electricity when the brushing hair moves up and down. A method for removing foreign matter from a semiconductor device, comprising: spraying a high-pressure gas containing ions onto a semiconductor device and the vicinity of the semiconductor device, and collecting the remaining foreign matter adhered by the high-pressure gas spraying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3226667A JPH0567714A (en) | 1991-09-06 | 1991-09-06 | Device and method for removing foreign matter on semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3226667A JPH0567714A (en) | 1991-09-06 | 1991-09-06 | Device and method for removing foreign matter on semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0567714A true JPH0567714A (en) | 1993-03-19 |
Family
ID=16848775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3226667A Pending JPH0567714A (en) | 1991-09-06 | 1991-09-06 | Device and method for removing foreign matter on semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0567714A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1465241A2 (en) * | 2003-04-04 | 2004-10-06 | ASM Technology Singapore Pte Ltd. | Apparatus and method for cleaning an electronic device |
| JP2007152438A (en) * | 2005-11-30 | 2007-06-21 | Nec Electronics Corp | Manufacturing apparatus and manufacturing method for semiconductor |
-
1991
- 1991-09-06 JP JP3226667A patent/JPH0567714A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1465241A2 (en) * | 2003-04-04 | 2004-10-06 | ASM Technology Singapore Pte Ltd. | Apparatus and method for cleaning an electronic device |
| EP1465241A3 (en) * | 2003-04-04 | 2006-11-15 | ASM Technology Singapore Pte Ltd. | Apparatus and method for cleaning an electronic device |
| JP2007152438A (en) * | 2005-11-30 | 2007-06-21 | Nec Electronics Corp | Manufacturing apparatus and manufacturing method for semiconductor |
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