JPH0567677A - Cutting method of laminate of silicon and glass - Google Patents
Cutting method of laminate of silicon and glassInfo
- Publication number
- JPH0567677A JPH0567677A JP22797291A JP22797291A JPH0567677A JP H0567677 A JPH0567677 A JP H0567677A JP 22797291 A JP22797291 A JP 22797291A JP 22797291 A JP22797291 A JP 22797291A JP H0567677 A JPH0567677 A JP H0567677A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- glass
- cutting
- blade
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は,半導体圧力センサ等に
用いられるシリコンウエハとパイレックスガラスの接合
部材の切断技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for cutting a joining member of a silicon wafer and a Pyrex glass used for a semiconductor pressure sensor or the like.
【0002】[0002]
【従来の技術】従来シリコンウエハとパイレックスガラ
スの接合部材の切断に際してはガラス用のブレ―ドを用
いている。その理由はガラス用のブレ―ドではシリコン
の切断が可能であるが,シリコン用ブレ―ドではガラス
の切断ができないからである。2. Description of the Related Art Conventionally, a glass blade is used for cutting a joining member between a silicon wafer and Pyrex glass. The reason is that the glass blade can cut silicon, but the silicon blade cannot cut glass.
【0003】[0003]
【発明が解決しようとする課題】しかしながら,ガラス
用ブレ―ドを用いてシリコンを切断すると,シリコン表
面のチッピング(切口の欠け)が大きくなる。このチッ
ピングが大きいと欠けによって周辺部の素子が破壊され
たり,Al配線が断線するという問題があった。また,
欠けによって発生するシリコンの小片がシリコンウエハ
の表面を傷付け,その表面に形成した素子を破壊した
り,Al配線の絶縁不良を招くという問題があった。本
発明は上記従来技術の問題点を解決する為になされたも
ので,2種類のブレ―ドを用いて2段階に分けて切断を
行うことにより,欠けのない切断を行い,シリコン板の
上に形成した電子素子の不良や配線の絶縁不良のないシ
リコン・ガラス接合部材の切断方法を提供することを目
的とする。However, when silicon is cut using a glass blade, chipping (cutting chip) on the silicon surface becomes large. If this chipping is large, there is a problem that the chip in the peripheral portion is broken or the Al wiring is broken due to chipping. Also,
There is a problem that a small piece of silicon generated by the chipping damages the surface of the silicon wafer, destroys the element formed on the surface, and causes insulation failure of the Al wiring. The present invention has been made in order to solve the above-mentioned problems of the prior art. By using two types of blades and cutting in two steps, it is possible to perform cutting without chipping and to cut on a silicon plate. It is an object of the present invention to provide a method for cutting a silicon-glass bonding member that does not have a defect in an electronic element formed in the above or an insulation defect in wiring.
【0004】[0004]
【課題を解決するための手段】上記課題を解決する為に
本発明は,所定の厚さを有する平板状のシリコンとガラ
スが接合された接合部材の切断方法において,シリコン
用ブレ―ドを用いて前記シリコン板側から切り進み,前
記ガラス板に達しない深さで中止する工程と,前記シリ
コンブレ―ドの幅より狭い幅を有するガラス用ブレ―ド
を用いて残りのシリコン板とガラス板を切断する工程か
らなることを特徴とするものである。In order to solve the above problems, the present invention uses a blade for silicon in a method of cutting a joining member in which flat silicon and glass having a predetermined thickness are joined. Cutting from the silicon plate side and stopping at a depth that does not reach the glass plate, and the remaining silicon plate and glass plate using a glass blade having a width narrower than the width of the silicon blade. It is characterized by comprising the step of cutting.
【0005】[0005]
【作用】シリコン部はシリコン用ブレ―ドで切断するの
で欠けは生じない。ガラス用ブレ―ドではシリコン用ブ
レ―ドより幅が狭く,シリコンの表面を切断しないので
欠けが生じることがない。[Function] Since the silicon part is cut with the blade for silicon, no chipping occurs. The glass blade is narrower than the silicon blade, and since the silicon surface is not cut, no chipping occurs.
【0006】[0006]
【実施例】図1(a),(b)は本発明の一実施例の概
略製作工程を示す断面図である。これらの図において,
1は接合部材である。この接合部材1は厚さtが例えば
0.5mm程度のシリコン板2およびは厚さTが2mm
程度のパイレックスガラス板3から構成されており,こ
れらの板2,3は例えば陽極接合等により接合されてい
る。1 (a) and 1 (b) are sectional views showing a schematic manufacturing process of an embodiment of the present invention. In these figures,
Reference numeral 1 is a joining member. The joining member 1 has a silicon plate 2 having a thickness t of about 0.5 mm and a thickness T of 2 mm.
It is composed of a Pyrex glass plate 3 of a certain degree, and these plates 2 and 3 are bonded by, for example, anodic bonding.
【0007】始めに(a)図において,接合部材1を図
示しない切断装置に取付けた後,厚さD(例えば300
μm程度)のシリコン用ブレ―ドを用いてシリコンに深
さd(例えば0.3mm程度)の切れ目(斜線Kで示す
部分)を入れる。この場合,シリコンの表面には欠けが
生じることはない。First, in FIG. 1 (a), after the joining member 1 is attached to a cutting device (not shown), a thickness D (for example, 300
Using a silicon blade having a thickness of about μm, a cut (a portion indicated by a diagonal line K) having a depth d (for example, about 0.3 mm) is made in the silicon. In this case, the silicon surface is not chipped.
【0008】次に(b)図において,ブレ―ドの厚さが
わずかに薄いD´(例えば250μm程度)のガラス用
ブレ―トと交換し,切口の中心を合わせて残りのシリコ
ンとガラスd´(斜線K´で示す部分)を切断する。こ
の場合ガラス用ブレ―ドはシリコンブレ―ドに対し50
μm狭くなっているので,シリコンの表面に触れること
なく残りのシリコン0.2mmとガラス2mmを研削す
ることが可能である。なお,上記実施例においては30
0μm程度のシリコンブレ―ドを用いた例を示したが,
この様に厚いブレ―ドは特注品となり一般には販売され
ていない。その理由はシリコンウエハの厚さは0.3〜
0.5mm程度なので,そのように厚いブレ―ドを必要
としないからである(特注品は入手に時間がかかるとと
もに高価である)。Next, in FIG. 2 (b), the blade is replaced with a glass plate having a slightly thin thickness D '(for example, about 250 .mu.m), and the remaining silicon and glass d are aligned with the centers of the cuts. The ‘(portion indicated by the diagonal line K ′) is cut. In this case, the glass blade is 50 against the silicon blade.
Since it is narrowed by μm, it is possible to grind the remaining 0.2 mm of silicon and 2 mm of glass without touching the surface of silicon. In the above embodiment, 30
An example using a silicon blade of about 0 μm was shown.
Such thick blades are custom-made items and are not generally sold. The reason is that the thickness of the silicon wafer is 0.3-
This is because it is about 0.5 mm, so that such a thick blade is not required (a custom-made product takes time to obtain and is expensive).
【0009】図2(a),(b)は例えば40μm程度
の薄いシリコンブレ―ドを用いて接合部材1を切断する
概略工程を示している。即ち,この実施例においては,
(a)図において,40μmの厚さのシリコン用ブレ―
ドを用いてdの幅の切れ目(斜線K1 で示す部分)を2
箇所入れる。この場合,2つの切れ目の外幅Dは例えば
300μm程度とする。この場合もシリコン表面に欠け
が生じることはない。2A and 2B show schematic steps of cutting the joining member 1 by using a thin silicon blade having a thickness of, for example, about 40 μm. That is, in this embodiment,
In Figure (a), a 40 μm thick braid for silicon.
Use d to make two cuts in the width of d (the part indicated by the diagonal line K 1 ).
Insert the place. In this case, the outer width D of the two cuts is, for example, about 300 μm. Also in this case, the silicon surface is not chipped.
【0010】次に(b)図において,ブレ―ドの厚さが
わずかに薄いD´(例えば250μm程度)のガラス用
ブレ―トと交換し,切口の中心を合わせてシリコンとガ
ラス(斜線K1 ´で示す部分)を切断する。上記の方法
によれば特注品のブレ―ドを用いることなくシリコン2
とガラス3の接合部材1を切断することができる。Next, in FIG. 2 (b), the blade is exchanged for a glass plate having a slightly thin thickness D '(for example, about 250 μm), and the centers of the cuts are aligned with each other and the silicon and the glass (hatched K Cut the part indicated by 1 '). According to the above method, it is possible to use silicon 2 without using a specially ordered blade.
The joining member 1 of the glass 3 can be cut.
【0011】[0011]
【発明の効果】以上実施例とともに具体的に説明した様
に,本発明のシリコン・ガラス接合部材の切断方法によ
れば,2種類のブレ―ドを用いて2段階に分けて切断を
行うことにより,欠けのない切断を行うことができ,シ
リコン板の上に形成した電子素子の不良や配線の絶縁不
良のない半導体装置を実現することができる。As described above in detail with reference to the embodiments, according to the method for cutting a silicon-glass bonding member of the present invention, the cutting is performed in two steps using two types of blades. As a result, it is possible to carry out cutting without chipping, and it is possible to realize a semiconductor device having no defects in electronic elements formed on a silicon plate and insulation defects in wiring.
【図1】(a),(b)は本発明の一実施例の概略製作
工程を示す断面図である。1A and 1B are cross-sectional views showing a schematic manufacturing process of an embodiment of the present invention.
【図2】(a),(b)は本発明の他の実施例の概略製
作工程を示す断面図である。2A and 2B are cross-sectional views showing a schematic manufacturing process of another embodiment of the present invention.
【符号の説明】 1 接合部材 2 シリコン板 3 ガラス板[Explanation of symbols] 1 joining member 2 silicon plate 3 glass plate
Claims (1)
ガラスが接合された接合部材の切断方法において,シリ
コン用ブレ―ドを用いて前記シリコン板側から切り進
み,前記ガラス板に達しない深さで中止する工程と,前
記シリコンブレ―ドの幅より狭い幅を有するガラス用ブ
レ―ドを用いて残りのシリコン板とガラス板を切断する
工程からなることを特徴とするシリコン・ガラス接合部
材の切断方法。1. A method for cutting a joining member in which flat-plate silicon having a predetermined thickness and glass are joined, in which a blade for silicon is used to cut from the silicon plate side and not reach the glass plate. Silicon-glass bonding, which comprises a step of stopping at a depth and a step of cutting the remaining silicon plate and glass plate using a glass blade having a width narrower than the width of the silicon blade. How to cut parts.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22797291A JPH0567677A (en) | 1991-09-09 | 1991-09-09 | Cutting method of laminate of silicon and glass |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22797291A JPH0567677A (en) | 1991-09-09 | 1991-09-09 | Cutting method of laminate of silicon and glass |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0567677A true JPH0567677A (en) | 1993-03-19 |
Family
ID=16869145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22797291A Pending JPH0567677A (en) | 1991-09-09 | 1991-09-09 | Cutting method of laminate of silicon and glass |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0567677A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007081264A (en) * | 2005-09-16 | 2007-03-29 | Disco Abrasive Syst Ltd | Cutting method and cutting apparatus |
-
1991
- 1991-09-09 JP JP22797291A patent/JPH0567677A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007081264A (en) * | 2005-09-16 | 2007-03-29 | Disco Abrasive Syst Ltd | Cutting method and cutting apparatus |
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