JPH0567589B2 - - Google Patents
Info
- Publication number
- JPH0567589B2 JPH0567589B2 JP62206439A JP20643987A JPH0567589B2 JP H0567589 B2 JPH0567589 B2 JP H0567589B2 JP 62206439 A JP62206439 A JP 62206439A JP 20643987 A JP20643987 A JP 20643987A JP H0567589 B2 JPH0567589 B2 JP H0567589B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- temperature coefficient
- composition
- tio
- bao
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000203 mixture Substances 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 13
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims description 5
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052573 porcelain Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 2
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Description
(産業上の利用分野)
この発明は、マイクロ波用の誘電体磁器組成物
に関するものである。
(従来の技術)
マイクロ波回路用の誘電体共振器や温度補償用
磁器コンデンサなどでは、誘電体磁器組成物とし
て、比誘電率(εr)および無負荷Q(Qu)が大き
く、共振周波数の温度係数(τf)が0を中心にし
て正または負の任意の温度系数が得られることが
必要とされている。
従来、かかる誘電体磁器組成物としては、
BaO・TaO2系、MgTiO3・CaO系、ZrO2・
SnO2・TiO2系などが使用されていた。
(発明が解決しようとする問題点)
しかし、これらの誘電体磁器組成物を用いて誘
電体共振器やコンデンサンを製造した場合は、そ
の温度係数(τf)が0pmm/℃付近ではその比誘
電率(εr)が20〜40と小さく、その結果、誘電体
共振器などの小形化が不可能であるという欠点が
あつた。
この発明は上記の点に鑑みなされたもので、温
度係数が0付近においても比誘電率(εr)および
無負荷Qが大きく、かつ組成変化によつて広範囲
に温度係数(τf)を変化させることのできる誘電
体磁器組成物を提供することを目的とする。
(問題点を解決するための手段)
この発明の誘電体磁器組成物は、(BaO)・
(TiO2)x系組成物、酸化サマリウム(Sm2O3)お
よび酸化イツテルビウム(Yb2O3)からなる誘電
体磁器組成物であつて、酸化物換算で
BaO:15.0〜18.1モル%
TiO2:61.8〜70.3モル%
Sm2O3:5〜19モル%
Yb2O3:0.5〜12モル%
の組成範囲としたことを特徴とするものである。
(作用)
上記のような誘電体磁器組成物は、共振周波数
の温度係数(τf)が0付近でも比誘電率(εr)お
よび無負荷Q(Qu)が大きく、かつ組成変化によ
つて広範囲に温度係数(τf)が変化する。
(実施例)
以下この発明の実施例を説明する。
出発原料として化学的に高純度の炭酸バリウム
(BaCO3)、二酸化チタン(TiO2)、酸化サマリウ
ム(Sm2O3)および酸化イツテルビウム
(Yb2O3)を第1表および第2表に示す組成比率
にて混合し、空気中において1060℃2時間仮焼し
た。
(Industrial Application Field) This invention relates to a dielectric ceramic composition for microwave use. (Prior art) In dielectric resonators for microwave circuits, ceramic capacitors for temperature compensation, etc., dielectric ceramic compositions have large relative permittivity (ε r ) and no-load Q (Qu), and the resonance frequency is low. It is necessary to obtain an arbitrary temperature coefficient whose temperature coefficient (τ f ) is positive or negative around 0. Conventionally, such dielectric ceramic compositions include:
BaO・TaO 2 series, MgTiO 3・CaO series, ZrO 2・
SnO 2 and TiO 2 systems were used. (Problem to be solved by the invention) However, when dielectric resonators and capacitors are manufactured using these dielectric ceramic compositions, when the temperature coefficient (τ f ) is around 0 pmm/°C, the ratio decreases. The dielectric constant (ε r ) is as small as 20 to 40, and as a result, it has the disadvantage that it is impossible to miniaturize dielectric resonators and the like. This invention was made in view of the above points, and the relative permittivity (ε r ) and no-load Q are large even when the temperature coefficient is near 0, and the temperature coefficient (τ f ) can be varied over a wide range by changing the composition. It is an object of the present invention to provide a dielectric ceramic composition that can (Means for solving the problem) The dielectric ceramic composition of the present invention has (BaO).
A dielectric ceramic composition consisting of a ( TiO 2 ) 2 : 61.8 to 70.3 mol% Sm2O3 : 5 to 19 mol% Yb2O3 : 0.5 to 12 mol%. (Function) The dielectric ceramic composition described above has a large relative dielectric constant (ε r ) and no-load Q (Qu) even when the temperature coefficient (τ f ) of the resonance frequency is around 0, and the The temperature coefficient (τ f ) changes over a wide range. (Example) Examples of the present invention will be described below. Chemically high-purity barium carbonate (BaCO 3 ), titanium dioxide (TiO 2 ), samarium oxide (Sm 2 O 3 ) and ytterbium oxide (Yb 2 O 3 ) are used as starting materials in Tables 1 and 2. They were mixed at the composition ratio shown and calcined in air at 1060°C for 2 hours.
【表】【table】
【表】
得られた仮焼物をポツトミルで純水とともに湿
式粉砕し、脱水乾燥後バインダを添加し造粒し32
メツシユのフルイを通して整粒した。得られた造
粒粉は金型と油圧プレスを用いて成形圧力1〜
3ton/cm2で直径16mmφ厚さ9mmの円板状の成形体
とした。そして、この成形体を高純度のアルミナ
厘に入れ、1260℃〜1450℃2時間の焼成条件で焼
成し、誘導体磁器組成物を得た。
得られた磁器組成物についてハツキ・コールマ
ン法により比誘電率(εr)および無負荷Q(Qu)
を測定した。また、共振周波数の温度係数(τf)
は下記(1)式に従つて20℃における共振周波数を基
準にして−30℃〜70℃の温度範囲における値から
求めた。それらの結果を第2表に示す。これらの
測定における共振周波数は3〜5GHzであつた。
τf=f(70)−f(−30)/f(20)・1/△T(ppm
/℃)…(1)
ただし、
f(20):20℃における共振周波数
f(−30):−30℃における共振周波数
f(70):70℃における共振周波数
△T:測定温度差、ここでは70+30=100℃
第2表において、*印を付した試料番号のもの
は本発明の範囲外の比較例であり、それ以外の試
料が本発明範囲内の実施例である。
第1表及び第2表の結果によれば、(BaO)・
(TiO2)xが75モル%未満ならびに87モル%を超え
ると無負荷Q(Qu)が小さく、比誘電率(εr)も
小さくなり不適当である。また、Sm2O3が5モ
ル%未満ならびに19モル%を超えると無負荷Q
(Qu)が小さくなり比誘電率(εr)も小さくなり
不適当である。さらに、Yb2O3が0.5モル%未満
ならびに12モル%を超えると無負荷Q(Qu)が小
さく、εrも小さくなり不適当である。
したがつて、実用的にみて、(BaO)・(TiO2)
×:75〜87モル%、Sm2O3:5〜19モル%、
Yb2O3:0.5〜12モル%の範囲が適当である。こ
こで、(BaO)・(TiO2)xのxは3.8〜4.2であるこ
とから、BaO:15.0〜18.1モル%、TiO2:61.8〜
70.3モル%、Sm2O3:5〜19モル%、Yb2O3:0.5
〜12モル%の範囲が適当である。
また、前記第2表によれば、本発明の磁器組成
物は、共振周波数の温度係数(τf)が0付近で大
きな比誘電率(εr)と無負荷Q(Qu)が得られて
いることが分り、さらに組成変化によつて広範囲
に温度係数が変化することが分る。
(発明の効果)
以上のように、この発明の誘電体磁器組成物
は、マイクロ波領域において、共振周波数の温度
係数が0付近においても無負荷Qおよび比誘電率
が大きく、空に組成変化によつて広範囲に温度係
数τfを変化させることができる。よつて、マイク
ロ波誘電体共振器あるいは温度補償用コンデンサ
などの誘電体磁器組成物として利用してそれらの
小型化を図ることができ、その工業的価値は大で
ある。[Table] The obtained calcined product was wet-pulverized with pure water in a pot mill, and after dehydration and drying, a binder was added and granulated.
The grains were sized through a mesh sieve. The obtained granulated powder is molded using a mold and a hydraulic press under a molding pressure of 1~
A disc-shaped molded product with a diameter of 16 mm and a thickness of 9 mm was made at 3 ton/cm 2 . Then, this molded body was placed in a high-purity alumina pot and fired under firing conditions of 1260°C to 1450°C for 2 hours to obtain a dielectric ceramic composition. The relative dielectric constant (ε r ) and unloaded Q (Qu) of the obtained porcelain composition were determined by the Hatsuki-Coleman method.
was measured. Also, the temperature coefficient of the resonant frequency (τ f )
was determined from values in the temperature range of -30°C to 70°C based on the resonance frequency at 20°C according to equation (1) below. The results are shown in Table 2. The resonant frequency in these measurements was 3-5 GHz. τ f = f(70)-f(-30)/f(20)・1/△T(ppm
/℃)...(1) However, f(20): Resonance frequency at 20℃ f(-30): Resonance frequency at -30℃ f(70): Resonance frequency at 70℃ △T: Measured temperature difference, here 70+30=100°C In Table 2, the sample numbers marked with * are comparative examples outside the scope of the present invention, and the other samples are examples within the scope of the present invention. According to the results in Tables 1 and 2, (BaO)・
(TiO 2 ) If x is less than 75 mol% or exceeds 87 mol%, the unloaded Q (Qu) will be small and the relative permittivity (ε r ) will also be small, making it unsuitable. In addition, if Sm 2 O 3 is less than 5 mol% or exceeds 19 mol%, the unloaded Q
(Qu) becomes small and the relative dielectric constant (ε r ) also becomes small, which is inappropriate. Furthermore, if Yb 2 O 3 is less than 0.5 mol % or exceeds 12 mol %, the unloaded Q (Qu) will be small and ε r will also be small, which is inappropriate. Therefore, from a practical point of view, (BaO)・(TiO 2 )
× : 75 to 87 mol% , Sm2O3 : 5 to 19 mol%,
Yb 2 O 3 : A range of 0.5 to 12 mol% is appropriate. Here, since x of (BaO)/(TiO 2 ) x is 3.8 to 4.2, BaO: 15.0 to 18.1 mol%, TiO 2 : 61.8 to
70.3 mol% , Sm2O3 : 5-19 mol%, Yb2O3 : 0.5
A range of 12 mol % is suitable. Further, according to Table 2, the ceramic composition of the present invention has a large relative dielectric constant (ε r ) and no-load Q (Qu) when the temperature coefficient (τ f ) of the resonance frequency is around 0. It is found that the temperature coefficient changes over a wide range due to changes in composition. (Effects of the Invention) As described above, the dielectric ceramic composition of the present invention has a large no-load Q and a large relative dielectric constant even when the temperature coefficient of the resonant frequency is near 0 in the microwave region, and is susceptible to compositional changes in the microwave region. Therefore, the temperature coefficient τ f can be varied over a wide range. Therefore, it can be used as a dielectric ceramic composition for microwave dielectric resonators, temperature compensation capacitors, etc. to reduce their size, and its industrial value is great.
Claims (1)
ム(Sm2O3)および酸化イツテルビウム
(Yb2O3)からなる誘電体磁器組成物であつて、
酸化物換算で BaO:15.0〜18.1モル% TiO2:61.8〜70.3モル% Sm2O3:5〜19モル% Yb2O3:0.5〜12モル% の組成範囲としたことを特徴とする誘電体磁器組
成物。[Scope of Claims] 1 A dielectric ceramic composition comprising a (BaO)/(TiO 2 ) x -based composition, samarium oxide (Sm 2 O 3 ) and ytterbium oxide (Yb 2 O 3 ),
A dielectric characterized by having a composition range of BaO: 15.0 to 18.1 mol%, TiO 2 : 61.8 to 70.3 mol%, Sm 2 O 3 : 5 to 19 mol%, Yb 2 O 3 : 0.5 to 12 mol%, in terms of oxides. Body porcelain composition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62206439A JPS6451372A (en) | 1987-08-21 | 1987-08-21 | Dielectric porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62206439A JPS6451372A (en) | 1987-08-21 | 1987-08-21 | Dielectric porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6451372A JPS6451372A (en) | 1989-02-27 |
JPH0567589B2 true JPH0567589B2 (en) | 1993-09-27 |
Family
ID=16523395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62206439A Granted JPS6451372A (en) | 1987-08-21 | 1987-08-21 | Dielectric porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6451372A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009053808A (en) | 2007-08-24 | 2009-03-12 | Fuji Xerox Co Ltd | Image forming apparatus, authentication information management method, and program |
-
1987
- 1987-08-21 JP JP62206439A patent/JPS6451372A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6451372A (en) | 1989-02-27 |
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