JPH0566758B2 - - Google Patents

Info

Publication number
JPH0566758B2
JPH0566758B2 JP59165379A JP16537984A JPH0566758B2 JP H0566758 B2 JPH0566758 B2 JP H0566758B2 JP 59165379 A JP59165379 A JP 59165379A JP 16537984 A JP16537984 A JP 16537984A JP H0566758 B2 JPH0566758 B2 JP H0566758B2
Authority
JP
Japan
Prior art keywords
film
semiconductor
laser beam
wavelength
electrode film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59165379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6142971A (ja
Inventor
Seiichi Kyama
Hideki Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59165379A priority Critical patent/JPS6142971A/ja
Priority to US06/745,301 priority patent/US4650524A/en
Priority to FR8509389A priority patent/FR2566584B1/fr
Publication of JPS6142971A publication Critical patent/JPS6142971A/ja
Publication of JPH0566758B2 publication Critical patent/JPH0566758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP59165379A 1984-06-20 1984-08-06 半導体装置の製造方法 Granted JPS6142971A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59165379A JPS6142971A (ja) 1984-08-06 1984-08-06 半導体装置の製造方法
US06/745,301 US4650524A (en) 1984-06-20 1985-06-14 Method for dividing semiconductor film formed on a substrate into plural regions by backside energy beam irradiation
FR8509389A FR2566584B1 (fr) 1984-06-20 1985-06-20 Procede de fabrication d'un dispositif a semi-conducteurs avec subdivision d'une pellicule semi-conductrice dudit dispositif possedant une pluralite de regions de conversion photoelectrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59165379A JPS6142971A (ja) 1984-08-06 1984-08-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6142971A JPS6142971A (ja) 1986-03-01
JPH0566758B2 true JPH0566758B2 (enrdf_load_stackoverflow) 1993-09-22

Family

ID=15811254

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59165379A Granted JPS6142971A (ja) 1984-06-20 1984-08-06 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6142971A (enrdf_load_stackoverflow)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery
JPS5935489A (ja) * 1982-08-24 1984-02-27 Sanyo Electric Co Ltd 光半導体装置の製造方法
JPS59107579A (ja) * 1982-12-11 1984-06-21 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS6014479A (ja) * 1983-07-04 1985-01-25 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Also Published As

Publication number Publication date
JPS6142971A (ja) 1986-03-01

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term