JPH0560268B2 - - Google Patents
Info
- Publication number
- JPH0560268B2 JPH0560268B2 JP59009796A JP979684A JPH0560268B2 JP H0560268 B2 JPH0560268 B2 JP H0560268B2 JP 59009796 A JP59009796 A JP 59009796A JP 979684 A JP979684 A JP 979684A JP H0560268 B2 JPH0560268 B2 JP H0560268B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure receiving
- support
- receiving structure
- pressure
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004020 conductor Substances 0.000 claims description 28
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は、一導電形の単結晶半導体よりなる受
圧構造体の受圧面と角度をなす面に他導電形の複
数の抵抗素子領域が形成され、この受圧構造体が
受圧面に平行な支持面を有する支持体に固定さ
れ、抵抗素子の抵抗変化によつて受圧面に印加さ
れる力の３成分を検出する圧覚センサに関する。[Detailed description of the invention] [Technical field to which the invention pertains] The present invention provides a method in which a plurality of resistance element regions of a different conductivity type are formed on a surface forming an angle with a pressure receiving surface of a pressure receiving structure made of a single crystal semiconductor of one conductivity type. The present invention relates to a pressure sensor in which the pressure receiving structure is fixed to a support having a support surface parallel to the pressure receiving surface, and detects three components of force applied to the pressure receiving surface due to resistance changes of a resistance element.
各種の物体を取り扱うロボツトハンドは、取り
扱う物体に応じて適正な力で把持することが望ま
れる。そのために把持力の３方向成分を精密に検
出し、さらにその面状分布を知る必要がある。そ
のような要求に応ずるため、第１図に示すような
小形の圧覚センサが提案されている。すなわち、
センサのリング状受圧構造体１をｎ形シリコン単
結晶で形成し、受圧面２に垂直な面およびリング
の内側面に拡散による不純物の導入によりｐ形領
域３１〜３４を形成し、この四つの抵抗素子領域
からなるブリツジの出力電圧から受圧面２に加わ
る力の垂直な成分FZを検出する。四つの斜めの
面に同様に形成されたｐ形の抵抗素子領域４１〜
４４は受圧面２に加わる力の水平な成分のうちｘ
方向の成分Fxを検出する。受圧面２に垂直な別
の面に形成されたｐ形の抵抗素子領域５１〜５４
は受圧面２に加わる力の水平な成分のうちｙ方向
の成分Fyを検出する。このほかに抵抗素子領域
を受圧面２に垂直な一平面上のみに配置したもの
も提案されている。このような受圧構造体１は、
安定した状態で力を受けるために受圧面に平行な
支持面を有する支持体に例えば接着剤を用いて固
定されるが、同時に各抵抗素子領域から得られる
電気信号を支持体上の導体に伝達することが考慮
されなければならない。このような接続は、圧覚
センサが小形であるため接続作業が容易で接続の
ためのスペースを必要とせず、また受圧構造体に
力が加わつたときの変形の繰返しにも耐える機械
的強度を必要とする。このため例えば細線を用い
てボンデイングにより接続することは適当とは言
えない。
It is desirable for a robot hand that handles various objects to grasp the object with an appropriate force depending on the object being handled. For this purpose, it is necessary to accurately detect the three-directional components of the gripping force and to know its planar distribution. In order to meet such demands, a small pressure sensor as shown in FIG. 1 has been proposed. That is,
The ring-shaped pressure-receiving structure 1 of the sensor is formed of n-type silicon single crystal, and p-type regions 31 to 34 are formed by introducing impurities by diffusion into the plane perpendicular to the pressure-receiving surface 2 and the inner surface of the ring. The perpendicular component F Z of the force applied to the pressure receiving surface 2 is detected from the output voltage of the bridge consisting of the resistive element region. P-type resistance element regions 41 to 41 similarly formed on four diagonal surfaces
44 is x of the horizontal component of the force applied to the pressure receiving surface 2
Detect the direction component Fx. P-type resistance element regions 51 to 54 formed on another surface perpendicular to the pressure receiving surface 2
detects the y-direction component F y of the horizontal component of the force applied to the pressure-receiving surface 2. In addition, a structure in which the resistance element region is arranged only on one plane perpendicular to the pressure receiving surface 2 has also been proposed. Such a pressure receiving structure 1 is
In order to receive force in a stable state, it is fixed using adhesive, for example, to a support that has a support surface parallel to the pressure receiving surface, but at the same time the electrical signals obtained from each resistive element area are transmitted to the conductor on the support. must be taken into account. This kind of connection is easy to connect because the pressure sensor is small and does not require space for connection, and also requires mechanical strength that can withstand repeated deformation when force is applied to the pressure receiving structure. shall be. For this reason, it is not appropriate to connect by bonding using, for example, a thin wire.
本発明は、受圧構造体と支持体の間の電気的接
続が容易で、さらに接続部が十分な機械的強度を
有する信頼性の高い圧覚センサを提供することを
目的とする。
An object of the present invention is to provide a highly reliable pressure sensor in which the electrical connection between a pressure receiving structure and a support is easy and the connection portion has sufficient mechanical strength.
上記の目的を達成するために、本発明によれ
ば、受圧構造体の抵抗素子領域形成面に設けられ
た複数の抵抗素子領域形成面端子導体と、支持体
の支持面に設けられ各々抵抗素子領域形成面素子
導体と相対する複数の支持面端子導体とが、それ
ぞれ対として、半田材もしくは導電性接着材によ
り直接接続されて成るものとする。
In order to achieve the above object, the present invention provides a plurality of resistive element area forming surface terminal conductors provided on the resistive element area forming surface of the pressure receiving structure, and a plurality of resistive element area forming surface terminal conductors provided on the supporting surface of the support body, respectively. The region forming surface element conductor and a plurality of opposing support surface terminal conductors are each directly connected as a pair by a solder material or a conductive adhesive.
第２図、第３図は本発明の一実施例を示し、受
圧構造体１の図示しない抵抗素子領域と接続され
た複数の端子導体６は受圧面２に対向する底面近
くに配置され、一方支持体７の上面にはこの端子
導体６に近接した位置に端子導体８が位置する。
この両端子導体６，８は第３図に示すように導電
接着材などの接続導体層９によりそれぞれ接着さ
れる。第４図、第５図は支持体７の凹部１０に受
圧構造体１の突出部１１を埋込ませて固定した場
合の実施例で、支持体７の端子導体８を凹部１０
の縁まで延ばすことにより、受圧構造体１の端子
導体６に、第２図、第３図に示した実施例にくら
べてより近接した形で配置することができ、また
受圧構造体１と支持体７の結合がより強固にな
る。端子導体６，８はAu，Niなどの金属層から
なり、接続導体９としてPb／Snはんだなどのろ
う材を用いることが有効である。接続導体９とし
てははんだのような柔軟な、あるいは可塑性の材
料を用いれば、受圧構造体１の受圧時の変形によ
り、支持体との相対位置に多少の変動が生じても
接続導体９の層内に歪が生ずることがなく、接着
材９の破断の原因となることがない。
2 and 3 show an embodiment of the present invention, in which a plurality of terminal conductors 6 connected to a resistance element region (not shown) of the pressure receiving structure 1 are arranged near the bottom surface facing the pressure receiving surface 2; A terminal conductor 8 is located on the upper surface of the support 7 at a position close to the terminal conductor 6.
As shown in FIG. 3, both terminal conductors 6 and 8 are bonded together using a connecting conductor layer 9 such as a conductive adhesive. 4 and 5 show examples in which the protrusion 11 of the pressure receiving structure 1 is embedded and fixed in the recess 10 of the support 7, and the terminal conductor 8 of the support 7 is inserted into the recess 10.
By extending it to the edge of the pressure receiving structure 1, the terminal conductor 6 of the pressure receiving structure 1 can be arranged closer to the terminal conductor 6 than in the embodiments shown in FIGS. 2 and 3. The bond between bodies 7 becomes stronger. The terminal conductors 6 and 8 are made of metal layers such as Au and Ni, and it is effective to use a brazing material such as Pb/Sn solder as the connection conductor 9. If a flexible or plastic material such as solder is used as the connecting conductor 9, the layer of the connecting conductor 9 can be maintained even if the relative position with the support body changes slightly due to deformation of the pressure-receiving structure 1 when receiving pressure. No distortion occurs within the adhesive material 9, and no breakage of the adhesive material 9 occurs.
第６図は、特に受圧構造体１の端子導体６には
んだバンプ１２を取り付け、支持体上に固定した
後加熱して支持体の端子導体に接触させる実施例
である。 FIG. 6 shows an embodiment in which a solder bump 12 is attached to a terminal conductor 6 of a pressure-receiving structure 1, fixed on a support, and then heated to contact the terminal conductor of the support.
以上に述べたように、本発明においては、上記
の構成を採用した結果、受圧構造体の端子導体と
支持体の端子導体との接続作業が容易であり、配
線密度の増大、接続強度の向上が可能となつて信
頼性が高まり小形圧覚センサとしてすこぶる有効
に使用できる。
As described above, in the present invention, as a result of adopting the above configuration, the connection work between the terminal conductor of the pressure receiving structure and the terminal conductor of the support body is easy, and the wiring density is increased and the connection strength is improved. This makes it possible to increase reliability and make it extremely effective as a small pressure sensor.
特に接続強度の面では、例えば可撓性配線フイ
ルムにより受圧構造体の端子導体と支持体の端子
導体とを接続する場合に比べ、作業工数は若干増
加するものの、著しく強度が向上する。 In particular, in terms of connection strength, the strength is significantly improved, although the number of man-hours is slightly increased compared to, for example, a case where the terminal conductor of the pressure receiving structure and the terminal conductor of the support are connected using a flexible wiring film.
第１図は本発明の対象となる圧覚センサの受圧
構造体の斜視図、第２図、第３図は本発明の一実
施例を示し、第２図は接続前、第３図は接続後の
斜視図、第４図、第５図は異なる実施例を示し、
第４図は組立前、第５図は組立、接続後の斜視
図、第６図はさらに別の実施例の受圧構造体の斜
視図である。
１……受圧構造体、２……受圧面、３１〜３
４，４１〜４４、５１〜５４……抵抗素子領域、
６，８……端子導体、９……接続導体層。
FIG. 1 is a perspective view of a pressure receiving structure of a pressure sensor which is a subject of the present invention, FIGS. 2 and 3 show an embodiment of the present invention, FIG. 2 is before connection, and FIG. 3 is after connection. The perspective views of FIGS. 4 and 5 show different embodiments,
FIG. 4 is a perspective view of a pressure receiving structure before assembly, FIG. 5 is a perspective view after assembly and connection, and FIG. 6 is a perspective view of a pressure receiving structure according to another embodiment. 1...Pressure receiving structure, 2...Pressure receiving surface, 31-3
4, 41-44, 51-54...resistance element region,
6, 8...terminal conductor, 9...connection conductor layer.
Claims (1)
の受圧面と角度をなす面に他導電形の複数の抵抗
素子領域が形成され、受圧構造体が受圧面に平行
な支持面を有する支持体に固定され、抵抗素子の
抵抗変化によつて受圧面に印加される力の３成分
を検出するものにおいて、前記受圧構造体の前記
抵抗素子領域形成面に設けられた複数の抵抗素子
領域形成面端子導体と、前記支持体の前記支持面
に設けられ各々前記抵抗素子領域形成面端子導体
と相対する複数の支持面端子導体とが、それぞれ
対として、半田材もしくは導電性接着材により直
接接続されて成ることを特徴とする圧覚センサ。1. A support in which a plurality of resistive element regions of a different conductivity type are formed on a surface forming an angle with the pressure receiving surface of a pressure receiving structure made of a single crystal semiconductor of one conductivity type, and the pressure receiving structure has a support surface parallel to the pressure receiving surface. a plurality of resistance element area forming surfaces provided on the resistance element area forming surface of the pressure receiving structure; A terminal conductor and a plurality of support surface terminal conductors provided on the support surface of the support body and facing each of the resistance element region forming surface terminal conductors are each directly connected as a pair by a solder material or a conductive adhesive. A pressure sensor characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59009796A JPS60154574A (en) | 1984-01-23 | 1984-01-23 | Sense of pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59009796A JPS60154574A (en) | 1984-01-23 | 1984-01-23 | Sense of pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60154574A JPS60154574A (en) | 1985-08-14 |
| JPH0560268B2 true JPH0560268B2 (en) | 1993-09-01 |
Family
ID=11730160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59009796A Granted JPS60154574A (en) | 1984-01-23 | 1984-01-23 | Sense of pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60154574A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63155677A (en) * | 1986-12-19 | 1988-06-28 | Agency Of Ind Science & Technol | Method for connecting tactile sense sensor and substrate |
| EP3450947B1 (en) * | 2017-09-05 | 2024-01-17 | IMEC vzw | Stress sensor for semiconductor components |
-
1984
- 1984-01-23 JP JP59009796A patent/JPS60154574A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60154574A (en) | 1985-08-14 |
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