JPH0559593B2 - - Google Patents
Info
- Publication number
- JPH0559593B2 JPH0559593B2 JP19565783A JP19565783A JPH0559593B2 JP H0559593 B2 JPH0559593 B2 JP H0559593B2 JP 19565783 A JP19565783 A JP 19565783A JP 19565783 A JP19565783 A JP 19565783A JP H0559593 B2 JPH0559593 B2 JP H0559593B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- stripe
- semiconductor laser
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 8
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 22
- 238000000034 method Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明はデイジタル・オーデイオ・デイスク、
ビデオデイスク等のコヒーレント光源を始めとし
て、各種電子機器の光源として、用いられる半導
体レーザ装置に関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a digital audio disk,
The present invention relates to a semiconductor laser device used as a light source for various electronic devices, including coherent light sources for video disks and the like.
従来例の構成とその問題点
電子機器の光源として、半導体レーザに要求さ
れるものの１つとして、単一スポツトでの発振、
すなわち、単一横モード発振がある。これを実現
するためには、活性領域付近に、光と電流を閉じ
込める必要がある。光の閉じ込めに関しては、二
重ヘテロ構造で活性層をはさみ、それと垂直な方
向にも屈折率差を設けて閉じ込めたり、或いは、
活性層中の一部に電流が流れる様にして、光増幅
率に活性層中で分布を持たせて閉じ込める方法が
ある。Conventional structure and its problems One of the requirements for a semiconductor laser as a light source for electronic equipment is oscillation at a single spot,
That is, there is single transverse mode oscillation. To achieve this, it is necessary to confine light and current near the active region. Regarding light confinement, the active layer is sandwiched between double heterostructures and a refractive index difference is created in the direction perpendicular to the active layer to confine the light, or
There is a method of confining the optical amplification factor with a distribution in the active layer by allowing a current to flow through a part of the active layer.
電流の閉じ込め、つまりキヤリアの閉じ込めに
関しては、二重ヘテロ構造で活性層をはさみ、半
導体中の電子のエネルギーバンドの構造により閉
じ込め、二重ヘテロ構造と垂直な方向では、活性
領域付近にのみ電流が流れる様に、ストライプ状
の電流狭さく領域を設けるのが通常の方法であ
る。 Regarding current confinement, that is, carrier confinement, the active layer is sandwiched between double heterostructures, and the structure of the energy band of electrons in the semiconductor confines the current. A common method is to provide a striped current confinement region to allow the current to flow.
第１図に、従来の代表的なストライプ構造レー
ザを示す。これらの図において、１０はn+−
GaAs基板、１１はｎ−AlxGa1-xAs層、１２は
AlyGa1-yAs（ｏｙ＜ｘ）層、１３はｐ−Alx
Ga1-xAs層、１４はｐ−GaAs層、１５は活性領
域、１６はストライプ部、１７はｎ−GaAs層、
２１はプロトンを照射した高抵抗領域、２２は
Zn拡散領域、２３はSiO2膜である。ａはp+−
GaAsキヤツプ層１４の上から、プロトンを照射
する事により、ストライプ部１６を形成したレー
ザである。ｂは、ｐ−AlxGa1-xAs層１３上に、
ｎ−GaAs層１７を成長し、ｎ−GaAs１７上か
らZnを拡散する事により、ｎ−GaAs層１７中に
電流注入用のストライプ部１６を形成した、Zn
拡散形ストライプ構造レーザである。ｃはp+−
GaAs cap層１４上にSiO2膜等の絶縁膜２３を設
ける事により、電流注入用のストライプ１６を形
成したレーザである。 FIG. 1 shows a typical conventional striped structure laser. In these figures, 10 is n + −
GaAs substrate, 11 is n-Al x Ga 1-x As layer, 12 is
Al y Ga 1-y As (oy<x) layer, 13 is p-Al x
Ga 1-x As layer, 14 p-GaAs layer, 15 active region, 16 stripe portion, 17 n-GaAs layer,
21 is a high resistance region irradiated with protons, and 22 is a high resistance region irradiated with protons.
The Zn diffusion region 23 is a SiO 2 film. a is p + −
This laser forms the stripe portion 16 by irradiating protons from above the GaAs cap layer 14. b is on the p-Al x Ga 1-x As layer 13,
A striped portion 16 for current injection is formed in the n-GaAs layer 17 by growing an n-GaAs layer 17 and diffusing Zn from above the n-GaAs 17.
This is a diffused stripe structure laser. c is p + −
This is a laser in which a stripe 16 for current injection is formed by providing an insulating film 23 such as a SiO 2 film on the GaAs cap layer 14.
第１図のａ〜ｃは、何れもストライプ部１６に
より、電流が流れる領域を制限し、半導体レーザ
の発振しきい値を低減するとともに、活性層Aly
Ga1-yAs層（ｏ≦ｙ＜ｘ）１２中での発振領域
（以下、活性領域１５とする。）を制限して、その
形状効果により、高次横モードの発振を抑え、単
一横モード発振が実現される。 In each of a to c of FIG. 1, the stripe portion 16 restricts the area through which current flows, reduces the oscillation threshold of the semiconductor laser, and also reduces the active layer Al y
The oscillation region (hereinafter referred to as the active region 15) in the Ga 1-y As layer (o≦y<x) 12 is restricted, and its shape effect suppresses the oscillation of higher-order transverse modes, resulting in a single Transverse mode oscillation is realized.
しかしながら、上記のストライプ構造を作製す
る方法には、以下に述べる欠点がある。 However, the method for producing the striped structure described above has the following drawbacks.
１ 第１図ａにおいては、プロトン等のイオンを
電磁界により加速し、作製された二重ヘテロ構
造半導体ウエハに照射する。この時、半導体ウ
エハの照射された領域は、加速されたイオンが
通過する事により、損傷を受ける。しかも、活
性領域付近、または、活性領域直上付近のプロ
トン照射領域に近いところではGaAa層、
GaAlAs層の結晶が損傷を受け、半導体レーザ
の電気特性、光学特性、信頼性等を損う。1 In FIG. 1a, ions such as protons are accelerated by an electromagnetic field and irradiated onto a fabricated double heterostructure semiconductor wafer. At this time, the irradiated area of the semiconductor wafer is damaged by the accelerated ions passing through it. Moreover, near the active region or near the proton irradiation region directly above the active region, the GaAa layer
The crystal of the GaAlAs layer is damaged, impairing the electrical characteristics, optical characteristics, reliability, etc. of the semiconductor laser.
２ 第１図ｂでは、Zn拡散を高温（700℃〜850
℃）で行なう事が多く、各層中のドーパントも
拡散され、ｐ／ｎ接合界面が設計位置よりずれ
たり、ｐ／ｎ接合が設計通り形状するのが難し
くなる。2 In Figure 1b, Zn diffusion is carried out at high temperature (700℃~850℃).
C), and the dopants in each layer are also diffused, causing the p/n junction interface to shift from the designed position and making it difficult to shape the p/n junction as designed.
３ 第１図ｃでは、AlyGa1-yAs活性層１２での
活性領域１５が、第１図ａ，ｂのストライプ構
造を有するレーザに比べて広がるという問題が
ある。これは第１図ａ，ｂに比べて、第１図ｃ
の構造は、ストライプ１６による電流狭さくが
弱いためである。3. In FIG. 1c, there is a problem that the active region 15 in the Al y Ga 1-y As active layer 12 is wider than in the laser having the stripe structure in FIGS. 1a and 1b. This is compared to Figure 1 a and b, and Figure 1 c
This is because the current confinement by the stripes 16 is weak in the structure shown in FIG.
４ 第１図ａ〜ｃのストライプ構造レーザでは、
二重ヘテロ構造を含む多層薄膜の結晶成長と、
電流狭さく用のストライプ構造を設ける工程と
は別の装置を利用して作製しており、１つの装
置で両方を一度に作製することはできない。4 In the stripe structure lasers shown in Figures 1 a to c,
Crystal growth of multilayer thin films containing double heterostructures,
It is manufactured using a separate device from the step of providing the stripe structure for current confinement, and it is not possible to manufacture both at the same time with one device.
発明の目的
本発明は上記欠点に鑑み、キヤリア濃度がよく
制御され、界面で急しゆんな多層構造と強い電流
狭さく用ストライプ構造とを１回の結晶成長で形
成する半導体レーザ装置の製造方法を提供するも
のである。Purpose of the Invention In view of the above-mentioned drawbacks, the present invention provides a method for manufacturing a semiconductor laser device in which the carrier concentration is well controlled, and a multilayer structure with a sudden drop at the interface and a strong current confining stripe structure are formed in one crystal growth. This is what we provide.
発明の構成
この目的を達成するために本発明の半導体レー
ザ装置の製造方法は局部加熱手段を用いながら、
二重ヘテロ構造を含む多層薄膜結晶成長を行ない
その結晶成長層の一部が単結晶領域で他は多結晶
層である薄膜を作製することから構成されてい
る。この構成によつて、二重ヘテロ構造及びその
結晶層に損傷を与えることなく、しかも、多結晶
薄膜の一部である単結晶領域が、良好な電流狭さ
くストライプとなるため、１回の結晶成長でスト
ライプ構造まで作り込め、低しきい値で単一横モ
ード発振する半導体レーザ装置を製造する事がで
きる。Structure of the Invention In order to achieve this object, the method for manufacturing a semiconductor laser device of the present invention uses local heating means, and
It consists of producing a thin film in which a part of the crystal growth layer is a single crystal region and the other part is a polycrystalline layer by performing multilayer thin film crystal growth including a double heterostructure. With this configuration, the double heterostructure and its crystal layers are not damaged, and the single crystal region that is part of the polycrystalline thin film forms a good current narrowing stripe, allowing one crystal growth. It is possible to fabricate up to a stripe structure using this method, and to manufacture a semiconductor laser device that oscillates in a single transverse mode at a low threshold.
実施例の説明
第２図に、本発明により作製した半導体レーザ
装置の一例を示す。具体的に実施例を用いて、本
発明の製造方法を説明する。DESCRIPTION OF EMBODIMENTS FIG. 2 shows an example of a semiconductor laser device manufactured according to the present invention. The manufacturing method of the present invention will be specifically explained using Examples.
第２図において、ｎ型GaAs単結晶基板１０上
にエピタキシヤル成長法、すなわち、MOCVD
法（有機金属気相成長方法）、又はMBE法（分子
線エピタキシヤル方法）により、順次ｎ−Alx
Gs1-xAs層１１、AlyGa1-yAs層１２（ｏ≦ｙ＜
ｘ）、ｐ−AlxGa1-xAs層１３をそれぞれ単結晶と
して成長させ、（ｐ型GaAs単結晶基板１０の場
合には、その上に順次、ｐ−AlxGs1-xAs層１１、
AlyGa1-yAs層１２（ｏ≦ｙ＜ｘ）、ｎ−AlxGa1-x
As層１３をそれぞれ成長させる）その後、基板
温度をMOCVD法の場合は400℃、MBE法の場合
は、300℃に下げて、上記二重ヘテロ構造上に、
第３図に示す様にピツチ１でストライプ状にレー
ザビーム又は電子ビームをあて局部加熱を行ない
ながら、ｐ−GaAs層２５を結晶成長させる。
（ｐ型基板１０の場合は、ｎ−GaAs層２５を成
長させる。）局部加熱手段は、そのビーム径を５
〜10μmのスポツトに絞つて高速で走査しその部
分の基板温度を100℃〜200℃周囲より高くして、
ストライプ３１状にレーザビーム又は電子ビーム
が当たつている箇所の付近は、第２図に示す様
に、GaAs単結晶領域２４となり、当たつていな
い場所は、GaAs多結晶層２５となる。その結
果、多結晶層２５の比抵抗が、単結晶領域２４の
比抵抗より４桁程度大きくなるため、ストライプ
部１６の幅で電流狭さくが行なわれ、低しきい値
で、単一横モード発振するストライプ構造レーザ
が得られた。 In FIG. 2, an epitaxial growth method, that is, MOCVD, is performed on an n-type GaAs single crystal substrate 10.
(metal-organic vapor phase epitaxy method ) or MBE method (molecular beam epitaxial method)
Gs 1-x As layer 11, Al y Ga 1-y As layer 12 (o≦y<
x), the p-Al x Ga 1-x As layer 13 is grown as a single crystal, and (in the case of the p-type GaAs single crystal substrate 10, the p-Al x Gs 1-x As layer is sequentially grown thereon). 11,
Al y Ga 1-y As layer 12 (o≦y<x), n-Al x Ga 1-x
After that, the substrate temperature is lowered to 400°C for the MOCVD method and 300°C for the MBE method, and the As layer 13 is grown on the double heterostructure.
As shown in FIG. 3, the p-GaAs layer 25 is grown as a crystal by applying a laser beam or an electron beam in a stripe pattern to the pitch 1 to locally heat the layer.
(In the case of the p-type substrate 10, the n-GaAs layer 25 is grown.) The local heating means has a beam diameter of 5
Focus on a ~10μm spot and scan at high speed to raise the substrate temperature in that area to 100℃~200℃ higher than the surrounding area.
As shown in FIG. 2, the area near the area where the laser beam or electron beam hits in the form of a stripe 31 becomes a GaAs single crystal region 24, and the area where it is not hit becomes a GaAs polycrystalline layer 25. As a result, the resistivity of the polycrystalline layer 25 becomes about four orders of magnitude larger than the resistivity of the single crystal region 24, so current narrowing is performed by the width of the stripe portion 16, and a single transverse mode oscillation occurs at a low threshold. A laser with a stripe structure was obtained.
なお、本実施例は、GaAs系、GaAlAs系半導
体レーザについて述べたが、InP系や他の多元混
晶系を含む化合物半導体を材料とする半導体レー
ザについても同様に適用が可能である。 Although this embodiment has been described with respect to GaAs-based and GaAlAs-based semiconductor lasers, it is also applicable to semiconductor lasers made of compound semiconductors including InP-based and other multi-component mixed crystal systems.
発明の効果
以上、本発明により、単一横モード発振するス
トライプ構造レーザを作製することができる。Effects of the Invention As described above, according to the present invention, a striped structure laser that oscillates in a single transverse mode can be manufactured.
本発明の半導体レーザ装置の製造方法は、
１ プロトン照射型ストライプ構造レーザと同等
な電流狭さくストライプを設ける事ができ、低
しきい値レーザが得られ、
２ 基板上に成長したエピタキシヤル層に損傷を
与える事がなく、レーザの特性や信頼性を損な
う事がなく、
３ 従来のストライプ構造に比べ、ストライプを
設けるためだけの工程が不必要で、１回の結晶
成長で、二重ヘテロ構造を含む半導体レーザ作
製用多層薄膜とストライプ構造を形成する事が
でき簡便である。 The method for manufacturing a semiconductor laser device of the present invention has the following advantages: 1. A current narrowing stripe equivalent to a proton irradiation type stripe structure laser can be provided, and a low threshold laser can be obtained; 2. The epitaxial layer grown on the substrate can be prevented from being damaged. 3. Compared to conventional striped structures, there is no need for a process just to provide stripes, and a double heterostructure can be created with one crystal growth. It is easy to form a striped structure with a multilayer thin film for manufacturing a semiconductor laser.
などその実用的効果は大なるものがある。It has great practical effects.
第１図ａ〜ｃは、従来のストライプ構造を有す
る半導体レーザの断面図、第２図は、本発明の半
導体レーザ装置の製造方法により作製した半導体
レーザ装置の断面図、第３図は同方法において局
部加熱手段を用いてストライプ構造をつける方法
を説明するための図である。
１０……ｎ−GaAs基板（ｐ−GaAs基板）、１
１……ｎ−AlxGa1-xAs層（ｐ−AlxGa1-xAs層）、
１２……AlyGa1-yAs層（ｏ≦ｙ＜ｘ、活性層）、
１３……ｐ−AlxGa1-xAs層（ｎ−AlxGa1-xAs
層）、１４……ｐ−GaAs層（ｎ−GaAs層）、１
５……活性領域、１６……ストライプ又はストラ
イプ幅、１７……ｎ−GaAs層、２１……プロト
ンを照射した高抵抗領域、２２……Zn拡散領域、
２３……SiO2膜、２４……GaAs単結晶領域、２
５……GaAs多結晶層、３１……ストライプ状に
単結晶を結晶成長させる部分、３２……基板上に
エピタキシヤル成長した半導体ウエハ。
1a to 1c are cross-sectional views of a conventional semiconductor laser having a stripe structure, FIG. 2 is a cross-sectional view of a semiconductor laser device manufactured by the method of manufacturing a semiconductor laser device of the present invention, and FIG. 3 is a cross-sectional view of a semiconductor laser device manufactured by the method. FIG. 3 is a diagram for explaining a method of forming a stripe structure using local heating means in FIG. 10... n-GaAs substrate (p-GaAs substrate), 1
1...n-Al x Ga 1-x As layer (p-Al x Ga 1-x As layer),
12...Al y Ga 1-y As layer (o≦y<x, active layer),
13... p-Al x Ga 1-x As layer (n-Al x Ga 1-x As
layer), 14...p-GaAs layer (n-GaAs layer), 1
5... Active region, 16... Stripe or stripe width, 17... N-GaAs layer, 21... High resistance region irradiated with protons, 22... Zn diffusion region,
23...SiO 2 film, 24...GaAs single crystal region, 2
5...GaAs polycrystalline layer, 31...A portion where a single crystal is grown in a stripe shape, 32...A semiconductor wafer epitaxially grown on a substrate.
Claims (1)
ビーム又は電子ビームを局部的に照射しながら結
晶成長を行い、前記局部照射した部分に単結晶薄
膜、前記局部加熱されない部分に多結晶薄膜を形
成することを特徴とする半導体レーザ装置の製造
方法。1 Crystal growth is performed on a multilayer thin film containing a double heterostructure while locally irradiating a laser beam or an electron beam, and a single crystal thin film is formed in the locally irradiated area and a polycrystalline thin film is formed in the area that is not locally heated. A method of manufacturing a semiconductor laser device, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19565783A JPS6086888A (en) | 1983-10-19 | 1983-10-19 | Manufacture of semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19565783A JPS6086888A (en) | 1983-10-19 | 1983-10-19 | Manufacture of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6086888A JPS6086888A (en) | 1985-05-16 |
| JPH0559593B2 true JPH0559593B2 (en) | 1993-08-31 |
Family
ID=16344817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19565783A Granted JPS6086888A (en) | 1983-10-19 | 1983-10-19 | Manufacture of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6086888A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2687668B2 (en) * | 1990-04-17 | 1997-12-08 | 日本電気株式会社 | High power semiconductor laser device and manufacturing method thereof |
-
1983
- 1983-10-19 JP JP19565783A patent/JPS6086888A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6086888A (en) | 1985-05-16 |
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