JPH0558585B2 - - Google Patents
Info
- Publication number
- JPH0558585B2 JPH0558585B2 JP60209596A JP20959685A JPH0558585B2 JP H0558585 B2 JPH0558585 B2 JP H0558585B2 JP 60209596 A JP60209596 A JP 60209596A JP 20959685 A JP20959685 A JP 20959685A JP H0558585 B2 JPH0558585 B2 JP H0558585B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- electrode
- organic resin
- pinholes
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 59
- 229920005989 resin Polymers 0.000 claims description 32
- 239000011347 resin Substances 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 239000012212 insulator Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 18
- 239000010410 layer Substances 0.000 description 14
- 238000000059 patterning Methods 0.000 description 8
- -1 tin nitride Chemical class 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 241000533950 Leucojum Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- IBKBIJITWRZZBB-UHFFFAOYSA-N azanylidynestibane Chemical compound [Sb]#N IBKBIJITWRZZBB-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003606 tin compounds Chemical group 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60209596A JPS6269566A (ja) | 1985-09-21 | 1985-09-21 | 光電変換装置作製方法 |
| AU62912/86A AU583423B2 (en) | 1985-09-21 | 1986-09-18 | Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same |
| US07/082,115 US4812415A (en) | 1985-09-21 | 1987-08-06 | Method for making semiconductor device free from electrical short circuits through a semiconductor layer |
| US07/464,567 US5089426A (en) | 1985-09-21 | 1990-01-16 | Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60209596A JPS6269566A (ja) | 1985-09-21 | 1985-09-21 | 光電変換装置作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6269566A JPS6269566A (ja) | 1987-03-30 |
| JPH0558585B2 true JPH0558585B2 (enrdf_load_stackoverflow) | 1993-08-26 |
Family
ID=16575441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60209596A Granted JPS6269566A (ja) | 1985-09-21 | 1985-09-21 | 光電変換装置作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6269566A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0737876U (ja) * | 1993-12-21 | 1995-07-14 | 太田 隆治 | 自転車の荷籠装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110303272A1 (en) * | 2010-06-09 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric Conversion Device and Manufacturing Method Thereof |
| JP2012064933A (ja) | 2010-08-19 | 2012-03-29 | Semiconductor Energy Lab Co Ltd | 光電変換モジュール及びその作製方法 |
| ITMI20112296A1 (it) * | 2011-12-16 | 2013-06-17 | St Microelectronics Srl | Dispositivo elettronico flessibile incapsulato e relativo metodo di fabbricazione |
-
1985
- 1985-09-21 JP JP60209596A patent/JPS6269566A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0737876U (ja) * | 1993-12-21 | 1995-07-14 | 太田 隆治 | 自転車の荷籠装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6269566A (ja) | 1987-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |