JPH0558581B2 - - Google Patents

Info

Publication number
JPH0558581B2
JPH0558581B2 JP60030662A JP3066285A JPH0558581B2 JP H0558581 B2 JPH0558581 B2 JP H0558581B2 JP 60030662 A JP60030662 A JP 60030662A JP 3066285 A JP3066285 A JP 3066285A JP H0558581 B2 JPH0558581 B2 JP H0558581B2
Authority
JP
Japan
Prior art keywords
group
resistive element
germanium
elements
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60030662A
Other languages
English (en)
Japanese (ja)
Other versions
JPS618966A (ja
Inventor
Jon Horu Harorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS618966A publication Critical patent/JPS618966A/ja
Publication of JPH0558581B2 publication Critical patent/JPH0558581B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP60030662A 1984-06-22 1985-02-20 金属間化合物半導体集積回路 Granted JPS618966A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62382084A 1984-06-22 1984-06-22
US623820 2003-07-21

Publications (2)

Publication Number Publication Date
JPS618966A JPS618966A (ja) 1986-01-16
JPH0558581B2 true JPH0558581B2 (enExample) 1993-08-26

Family

ID=24499525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60030662A Granted JPS618966A (ja) 1984-06-22 1985-02-20 金属間化合物半導体集積回路

Country Status (3)

Country Link
EP (1) EP0165538B1 (enExample)
JP (1) JPS618966A (enExample)
DE (1) DE3583970D1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2186116B (en) * 1986-02-03 1989-11-22 Intel Corp Plasma enhanced chemical vapor deposited vertical resistor
US4755480A (en) * 1986-02-03 1988-07-05 Intel Corporation Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition
US4690728A (en) * 1986-10-23 1987-09-01 Intel Corporation Pattern delineation of vertical load resistor
JPH01308063A (ja) * 1988-06-07 1989-12-12 Oki Electric Ind Co Ltd 半導体抵抗素子及びその形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors
US4489104A (en) * 1983-06-03 1984-12-18 Industrial Technology Research Institute Polycrystalline silicon resistor having limited lateral diffusion

Also Published As

Publication number Publication date
JPS618966A (ja) 1986-01-16
EP0165538B1 (en) 1991-09-04
EP0165538A2 (en) 1985-12-27
EP0165538A3 (en) 1987-11-25
DE3583970D1 (de) 1991-10-10

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