JPS618966A - 金属間化合物半導体集積回路 - Google Patents
金属間化合物半導体集積回路Info
- Publication number
- JPS618966A JPS618966A JP60030662A JP3066285A JPS618966A JP S618966 A JPS618966 A JP S618966A JP 60030662 A JP60030662 A JP 60030662A JP 3066285 A JP3066285 A JP 3066285A JP S618966 A JPS618966 A JP S618966A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- group
- resistive element
- compound semiconductor
- intermetallic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62382084A | 1984-06-22 | 1984-06-22 | |
| US623820 | 2003-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS618966A true JPS618966A (ja) | 1986-01-16 |
| JPH0558581B2 JPH0558581B2 (enExample) | 1993-08-26 |
Family
ID=24499525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60030662A Granted JPS618966A (ja) | 1984-06-22 | 1985-02-20 | 金属間化合物半導体集積回路 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0165538B1 (enExample) |
| JP (1) | JPS618966A (enExample) |
| DE (1) | DE3583970D1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2186116B (en) * | 1986-02-03 | 1989-11-22 | Intel Corp | Plasma enhanced chemical vapor deposited vertical resistor |
| US4755480A (en) * | 1986-02-03 | 1988-07-05 | Intel Corporation | Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition |
| US4690728A (en) * | 1986-10-23 | 1987-09-01 | Intel Corporation | Pattern delineation of vertical load resistor |
| JPH01308063A (ja) * | 1988-06-07 | 1989-12-12 | Oki Electric Ind Co Ltd | 半導体抵抗素子及びその形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074465A (ja) * | 1983-06-03 | 1985-04-26 | エレクトロニクス リサ−チ アンド サ−ビス オ−ガニゼ−シヨン,インダストリアル テクノロジイ リサ−チ インスチチユ−ト | 多結晶シリコン抵抗体 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4467519A (en) * | 1982-04-01 | 1984-08-28 | International Business Machines Corporation | Process for fabricating polycrystalline silicon film resistors |
-
1985
- 1985-02-20 JP JP60030662A patent/JPS618966A/ja active Granted
- 1985-06-11 EP EP85107135A patent/EP0165538B1/en not_active Expired
- 1985-06-11 DE DE8585107135T patent/DE3583970D1/de not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074465A (ja) * | 1983-06-03 | 1985-04-26 | エレクトロニクス リサ−チ アンド サ−ビス オ−ガニゼ−シヨン,インダストリアル テクノロジイ リサ−チ インスチチユ−ト | 多結晶シリコン抵抗体 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0165538B1 (en) | 1991-09-04 |
| EP0165538A2 (en) | 1985-12-27 |
| JPH0558581B2 (enExample) | 1993-08-26 |
| EP0165538A3 (en) | 1987-11-25 |
| DE3583970D1 (de) | 1991-10-10 |
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