JPH0555329A - Visual pellet inspecting device - Google Patents
Visual pellet inspecting deviceInfo
- Publication number
- JPH0555329A JPH0555329A JP3209707A JP20970791A JPH0555329A JP H0555329 A JPH0555329 A JP H0555329A JP 3209707 A JP3209707 A JP 3209707A JP 20970791 A JP20970791 A JP 20970791A JP H0555329 A JPH0555329 A JP H0555329A
- Authority
- JP
- Japan
- Prior art keywords
- rays
- electric signals
- pellet
- wafer
- signals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体装置に関し、特に
ペレットの外観検査装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a pellet appearance inspection device.
【0002】[0002]
【従来の技術】従来のペレット外観検査装置は、従来人
が行なっていた外観検査を機械が行なう様に自動化した
ものであり、可視光線をウェーハ上のペレットに照射し
た結果をCCD等の撮像素子にとり込み、電気信号に変
換した後、得られた電気信号の比較により、ペレットの
良否を判定するものである。2. Description of the Related Art A conventional pellet visual inspection apparatus is an automatic one in which a machine performs the visual inspection conventionally performed by a person. The result of irradiating a pellet on a wafer with visible light is an image pickup device such as a CCD. The quality of the pellet is judged by comparing the electric signals obtained after the conversion into electric signals.
【0003】良否判定の原理は、相対位置が同じである
3つの異なったペレットの電気信号をそれぞれ比較装置
に入力し、比較装置は、3つの入力信号に差があるかど
うか比較検査し、もし、3者の内、いづれか1つに差が
認められれば差が認められたペレットを多数決判定によ
り、不良と判定するものである。The principle of pass / fail judgment is to input electric signals of three different pellets having the same relative position to a comparison device, and the comparison device compares and inspects whether there is a difference between the three input signals. If a difference is found in any one of the three, the pellet with a difference is judged to be defective by the majority decision.
【0004】[0004]
【発明が解決しようとする課題】従来の検査装置では、
可視光線が使用されていた為、Al配線や多結晶シリコ
ン膜等の下の異物や、シリコン基板中の異物等は、可視
光線が入り込めない為、検査出来ない不具合があった。
これら異物はAl配線を腐触させ切断に至ったり、或は
集積回路のしきい値電圧を変動させたり、PN接合付近
ではリーク電流を増加させたりすることにより、集積回
路の信頼性を低下させるという問題があった。In the conventional inspection apparatus,
Since visible light was used, foreign matter under the Al wiring, polycrystalline silicon film, etc., and foreign matter in the silicon substrate could not be inspected because visible light could not enter.
These foreign substances deteriorate the reliability of the integrated circuit by corroding the Al wiring and cutting it, changing the threshold voltage of the integrated circuit, or increasing the leak current near the PN junction. There was a problem.
【0005】[0005]
【課題を解決するための手段】本発明の検査装置は、X
線を発生する為の装置と、発生したX線をウェーハに照
射する為の装置と、ウェーハに照射したX線の回折光線
或は透過光線を電気信号に変換するX線検出器と、得ら
れた電気信号を比較し、異なっていれば不良と判定する
為の比較装置と、不良判定された場合に、不良ペレット
に不良の為のマーキングを施す装置とを有する。The inspection apparatus according to the present invention is provided with X
A device for generating X-rays, a device for irradiating the wafer with the generated X-rays, and an X-ray detector for converting the diffracted light rays or transmitted light rays of the X-rays irradiated on the wafer into electric signals. A comparison device is provided for comparing the electric signals, and if they are different, it is judged as a defective device, and a device for marking defective pellets for defective products when a defective device is judged.
【0006】[0006]
【作用】検査にX線を用いている為、半導体集積回路の
Al配線下の異物や、多結晶シリコン下の異物、或いは
Si基板中の異物を検出出来る。この為、可視光線では
発見出来なかった異物を発見出来、半導体集積回路の信
頼性を向上することができる。Since X-rays are used for the inspection, it is possible to detect a foreign substance under the Al wiring of the semiconductor integrated circuit, a foreign substance under the polycrystalline silicon, or a foreign substance in the Si substrate. Therefore, it is possible to find a foreign substance that could not be found with visible light, and improve the reliability of the semiconductor integrated circuit.
【0007】[0007]
【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の一実施例である。図1(a)に於い
て、X線発生装置1で生成されたX線は、X線照射装置
2により、ウェーハ6上のあらかじめ決められた位置に
照射される。X線は10-10m程度の波長を利用する。
ウェーハ6の表面付近で回折をうけたX線はX線の強度
情報を電気信号に変換するX線検出素子3に入射した
後、電気信号に変換され、比較装置4に送られ、信号の
比較が行なわれる。比較は、図1(b)に示される様
に、ウェーハ7上の3つの異なったペレット8の相対的
に同一の位置で反射されたX線をそれぞれ異なったX線
検出器3で電気信号に変換し、比較装置4に電気信号と
して入力する。比較装置4では多数決の原理に従い、も
し、電気信号に関し、他の2つと異なる信号がある場合
は同信号の信号源となるペレットを特定した後、レザー
マーキング装置5とステージ駆動装置7に信号を送り、
当該不良ペレットにレーザーでマーキングを施す。The present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment of the present invention. In FIG. 1A, the X-rays generated by the X-ray generator 1 are irradiated onto a predetermined position on the wafer 6 by the X-ray irradiation device 2. X-rays use a wavelength of about 10 -10 m.
The X-rays diffracted in the vicinity of the surface of the wafer 6 are incident on the X-ray detection element 3 which converts the intensity information of the X-rays into an electric signal, which is then converted into an electric signal and sent to the comparison device 4 to compare the signals. Is performed. For comparison, as shown in FIG. 1B, the X-rays reflected at the same relative positions of the three different pellets 8 on the wafer 7 are converted into electric signals by different X-ray detectors 3. It is converted and input to the comparison device 4 as an electric signal. In comparison device 4, according to the principle of majority decision, if there is a signal different from the other two regarding the electric signal, after identifying the pellet which is the signal source of the same signal, the signal is sent to laser marking device 5 and stage drive device 7. Send,
Mark the defective pellets with a laser.
【0008】次に本発明第2の実施例を図2に示す。第
1の実施例と異なる点は、第1の実施例がX線の回折光
を利用していたのに対し、第2の実施例では透過光を用
いていることである。この他は先の実施例と同じであ
る。透過光を用いることによって、ウェーハ6の表面だ
けでなく、深部の検査をも行なうことが可能である。Next, a second embodiment of the present invention is shown in FIG. The difference from the first embodiment is that the first embodiment uses X-ray diffracted light, whereas the second embodiment uses transmitted light. Other than this, it is the same as the previous embodiment. By using the transmitted light, not only the surface of the wafer 6 but also the deep portion can be inspected.
【0009】[0009]
【発明の効果】以上説明した様に、本発明のペレット外
観検査装置では、X線を用いている為、Al配線や多結
晶シリコン膜等の下の異物やシリコン基板中の異物を検
出できる。この為これら異物により引きおこされるAl
配線の断線、しきい値電圧の変動、リーク電流の増加等
を排除することが出来る為集積回路の信頼性を向上させ
ることが可能である。As described above, since the pellet visual inspection apparatus of the present invention uses X-rays, it is possible to detect foreign matters under the Al wiring, the polycrystalline silicon film, etc. and foreign matters in the silicon substrate. Therefore, Al caused by these foreign matters
Since disconnection of wiring, fluctuation of threshold voltage, increase of leak current, etc. can be eliminated, the reliability of the integrated circuit can be improved.
【図1】本発明の一実施例のブロック図。FIG. 1 is a block diagram of an embodiment of the present invention.
【図2】第2の実施例のブロック図。FIG. 2 is a block diagram of a second embodiment.
1 X線発生装置 2 X線照射装置 3 X線検出器 4 比較装置 5 レーザーマーキング装置 6 ウェーハ 7 ステージ駆動装置 1 X-ray generator 2 X-ray irradiation device 3 X-ray detector 4 Comparison device 5 Laser marking device 6 Wafer 7 Stage drive device
Claims (1)
ウェーハに照射する装置と、ウェーハに照射したX線の
回折光線或は透過光を電気信号に変換するX線検査器
と、得られた電気信号を比較し、異なっていれば、不良
と判定する為の比較装置と、不良判定された場合に、不
良ペレットに不良の為のマーキングを施す装置とで構成
されることを特徴とするペレット外観検査装置。1. An apparatus for generating X-rays, an apparatus for irradiating the wafer with the generated X-rays, and an X-ray inspection device for converting the diffracted light or transmitted light of the X-rays irradiated on the wafer into an electric signal. Comparing the obtained electric signals, if it is different, it is composed of a comparison device for judging as defective, and a device for marking defective pellets for defective when judged defective Appearance inspection device for pellets.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3209707A JPH0555329A (en) | 1991-08-22 | 1991-08-22 | Visual pellet inspecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3209707A JPH0555329A (en) | 1991-08-22 | 1991-08-22 | Visual pellet inspecting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0555329A true JPH0555329A (en) | 1993-03-05 |
Family
ID=16577311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3209707A Pending JPH0555329A (en) | 1991-08-22 | 1991-08-22 | Visual pellet inspecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0555329A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008304416A (en) * | 2007-06-11 | 2008-12-18 | Mitsubishi Electric Corp | Defect inspection device and defect inspection method of polycrystal silicon substrate |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS533060A (en) * | 1976-06-30 | 1978-01-12 | Hitachi Ltd | Measuring method of impurity concentration distribution |
JPS63210651A (en) * | 1987-02-27 | 1988-09-01 | Hitachi Ltd | Tomograph |
JPH03135045A (en) * | 1989-10-20 | 1991-06-10 | Nec Corp | External-view comparison inspection apparatus of wafer |
-
1991
- 1991-08-22 JP JP3209707A patent/JPH0555329A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS533060A (en) * | 1976-06-30 | 1978-01-12 | Hitachi Ltd | Measuring method of impurity concentration distribution |
JPS63210651A (en) * | 1987-02-27 | 1988-09-01 | Hitachi Ltd | Tomograph |
JPH03135045A (en) * | 1989-10-20 | 1991-06-10 | Nec Corp | External-view comparison inspection apparatus of wafer |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008304416A (en) * | 2007-06-11 | 2008-12-18 | Mitsubishi Electric Corp | Defect inspection device and defect inspection method of polycrystal silicon substrate |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980728 |