JPH0554272B2 - - Google Patents

Info

Publication number
JPH0554272B2
JPH0554272B2 JP56112572A JP11257281A JPH0554272B2 JP H0554272 B2 JPH0554272 B2 JP H0554272B2 JP 56112572 A JP56112572 A JP 56112572A JP 11257281 A JP11257281 A JP 11257281A JP H0554272 B2 JPH0554272 B2 JP H0554272B2
Authority
JP
Japan
Prior art keywords
type
layer
amorphous silicon
amorphous semiconductor
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56112572A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5814583A (ja
Inventor
Yoshihiro Hamakawa
Yoshihisa Oowada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP56112572A priority Critical patent/JPS5814583A/ja
Priority to DE8282106293T priority patent/DE3280112D1/de
Priority to DE8888117644T priority patent/DE3280418T2/de
Priority to EP88117644A priority patent/EP0309000B1/en
Priority to EP82106293A priority patent/EP0070509B2/en
Priority to US06/399,312 priority patent/US4450316A/en
Publication of JPS5814583A publication Critical patent/JPS5814583A/ja
Priority to US06/552,951 priority patent/US4499331A/en
Priority to US06/552,952 priority patent/US4491682A/en
Publication of JPH0554272B2 publication Critical patent/JPH0554272B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP56112572A 1981-07-17 1981-07-17 アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子 Granted JPS5814583A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP56112572A JPS5814583A (ja) 1981-07-17 1981-07-17 アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
DE8282106293T DE3280112D1 (de) 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische einrichtung aus amorphem silizium.
DE8888117644T DE3280418T2 (de) 1981-07-17 1982-07-14 Amorpher halbleiter und photovoltaische vorrichtung aus amorphem silizium.
EP88117644A EP0309000B1 (en) 1981-07-17 1982-07-14 Amorphous semiconductor and amorphous silicon photovoltaic device
EP82106293A EP0070509B2 (en) 1981-07-17 1982-07-14 Amorphous semiconductor and amorphous silicon photovoltaic device
US06/399,312 US4450316A (en) 1981-07-17 1982-07-19 Amorphous silicon photovoltaic device having two-layer transparent electrode
US06/552,951 US4499331A (en) 1981-07-17 1983-11-17 Amorphous semiconductor and amorphous silicon photovoltaic device
US06/552,952 US4491682A (en) 1981-07-17 1983-11-17 Amorphous silicon photovoltaic device including a two-layer transparent electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56112572A JPS5814583A (ja) 1981-07-17 1981-07-17 アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子

Publications (2)

Publication Number Publication Date
JPS5814583A JPS5814583A (ja) 1983-01-27
JPH0554272B2 true JPH0554272B2 (en, 2012) 1993-08-12

Family

ID=14590063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56112572A Granted JPS5814583A (ja) 1981-07-17 1981-07-17 アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子

Country Status (1)

Country Link
JP (1) JPS5814583A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0853201A (ja) * 1994-08-10 1996-02-27 Hiromi Hatakeyama ダストボックス

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61232685A (ja) * 1985-04-09 1986-10-16 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池およびその製造方法
JPH0689843B2 (ja) * 1985-10-07 1994-11-14 トヨタ自動車株式会社 自動変速機のトルクコンバータ出力軸回転数検出方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1123525A (en) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky High temperature amorphous semiconductor member and method of making same
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0853201A (ja) * 1994-08-10 1996-02-27 Hiromi Hatakeyama ダストボックス

Also Published As

Publication number Publication date
JPS5814583A (ja) 1983-01-27

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