JPH0551993B2 - - Google Patents
Info
- Publication number
- JPH0551993B2 JPH0551993B2 JP58005910A JP591083A JPH0551993B2 JP H0551993 B2 JPH0551993 B2 JP H0551993B2 JP 58005910 A JP58005910 A JP 58005910A JP 591083 A JP591083 A JP 591083A JP H0551993 B2 JPH0551993 B2 JP H0551993B2
- Authority
- JP
- Japan
- Prior art keywords
- signal
- memory cell
- data line
- capacitor
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 64
- 239000003990 capacitor Substances 0.000 claims description 17
- 230000000295 complement effect Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims 1
- 239000000872 buffer Substances 0.000 description 13
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005910A JPS59132493A (ja) | 1983-01-19 | 1983-01-19 | 半導体記憶装置における初期値設定回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58005910A JPS59132493A (ja) | 1983-01-19 | 1983-01-19 | 半導体記憶装置における初期値設定回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59132493A JPS59132493A (ja) | 1984-07-30 |
| JPH0551993B2 true JPH0551993B2 (ko) | 1993-08-04 |
Family
ID=11624049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58005910A Granted JPS59132493A (ja) | 1983-01-19 | 1983-01-19 | 半導体記憶装置における初期値設定回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132493A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2569010B2 (ja) * | 1986-05-21 | 1997-01-08 | 株式会社日立製作所 | 半導体メモリ |
| JPS63149899A (ja) * | 1986-12-15 | 1988-06-22 | Toshiba Corp | 半導体メモリ |
| JPH0668914B2 (ja) * | 1987-08-26 | 1994-08-31 | テキサス インスツルメンツ インコーポレイテツド | 記憶装置 |
-
1983
- 1983-01-19 JP JP58005910A patent/JPS59132493A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59132493A (ja) | 1984-07-30 |
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