JPH0550864B2 - - Google Patents
Info
- Publication number
- JPH0550864B2 JPH0550864B2 JP60090325A JP9032585A JPH0550864B2 JP H0550864 B2 JPH0550864 B2 JP H0550864B2 JP 60090325 A JP60090325 A JP 60090325A JP 9032585 A JP9032585 A JP 9032585A JP H0550864 B2 JPH0550864 B2 JP H0550864B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel
- mos transistor
- threshold voltage
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60090325A JPS61248563A (ja) | 1985-04-26 | 1985-04-26 | Ｃ―ｍｏｓトランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60090325A JPS61248563A (ja) | 1985-04-26 | 1985-04-26 | Ｃ―ｍｏｓトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61248563A JPS61248563A (ja) | 1986-11-05 |
| JPH0550864B2 true JPH0550864B2 (OSRAM) | 1993-07-30 |
Family
ID=13995368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60090325A Granted JPS61248563A (ja) | 1985-04-26 | 1985-04-26 | Ｃ―ｍｏｓトランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61248563A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5675164A (en) * | 1995-06-07 | 1997-10-07 | International Business Machines Corporation | High performance multi-mesa field effect transistor |
-
1985
- 1985-04-26 JP JP60090325A patent/JPS61248563A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61248563A (ja) | 1986-11-05 |
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