JPH05508267A - 先進的な太陽電池 - Google Patents
先進的な太陽電池Info
- Publication number
- JPH05508267A JPH05508267A JP92511931A JP51193192A JPH05508267A JP H05508267 A JPH05508267 A JP H05508267A JP 92511931 A JP92511931 A JP 92511931A JP 51193192 A JP51193192 A JP 51193192A JP H05508267 A JPH05508267 A JP H05508267A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- collection
- semiconductor
- solar cell
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000002800 charge carrier Substances 0.000 claims description 26
- 230000005684 electric field Effects 0.000 claims description 20
- 230000005855 radiation Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 230000007935 neutral effect Effects 0.000 claims description 7
- 230000002708 enhancing effect Effects 0.000 claims description 5
- 230000009191 jumping Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 215
- 239000004020 conductor Substances 0.000 description 23
- 239000000969 carrier Substances 0.000 description 18
- 230000006798 recombination Effects 0.000 description 13
- 238000005215 recombination Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 210000002784 stomach Anatomy 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- -1 oxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 241000282994 Cervidae Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/695,612 US5215599A (en) | 1991-05-03 | 1991-05-03 | Advanced solar cell |
| US695,612 | 1991-05-03 | ||
| PCT/US1992/003434 WO1992020104A1 (en) | 1991-05-03 | 1992-04-27 | Advanced solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05508267A true JPH05508267A (ja) | 1993-11-18 |
Family
ID=24793731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP92511931A Pending JPH05508267A (ja) | 1991-05-03 | 1992-04-27 | 先進的な太陽電池 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5215599A (OSRAM) |
| EP (1) | EP0538460A1 (OSRAM) |
| JP (1) | JPH05508267A (OSRAM) |
| AU (1) | AU2024592A (OSRAM) |
| CA (1) | CA2086409A1 (OSRAM) |
| WO (1) | WO1992020104A1 (OSRAM) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797653B2 (ja) * | 1991-10-01 | 1995-10-18 | 工業技術院長 | 光電変換素子 |
| JP2962502B2 (ja) | 1993-03-02 | 1999-10-12 | シャープ株式会社 | 光電変換装置 |
| AU8133994A (en) * | 1993-06-01 | 1994-12-20 | Electric Power Research Institute, Inc. | Advanced solar cell |
| DE19522539C2 (de) * | 1995-06-21 | 1997-06-12 | Fraunhofer Ges Forschung | Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben |
| US5742076A (en) * | 1996-06-05 | 1998-04-21 | North Carolina State University | Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance |
| US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
| FR2946459B1 (fr) * | 2009-06-05 | 2011-08-05 | Centre Nat Etd Spatiales | Element de structure pour panneau solaire, et structure comportant un tel element |
| US8466582B2 (en) * | 2010-12-03 | 2013-06-18 | Enphase Energy, Inc. | Method and apparatus for applying an electric field to a photovoltaic element |
| CN102569446A (zh) * | 2010-12-18 | 2012-07-11 | 罗炳文 | 外激式太阳电池 |
| AU2012258898A1 (en) * | 2011-05-20 | 2014-01-16 | Solexel, Inc. | Self-activated front surface bias for a solar cell |
| US9748414B2 (en) | 2011-05-20 | 2017-08-29 | Arthur R. Zingher | Self-activated front surface bias for a solar cell |
| US10199524B2 (en) * | 2012-01-13 | 2019-02-05 | International Business Machines Corporation | Field-effect photovoltaic elements |
| GB201200714D0 (en) * | 2012-01-16 | 2012-02-29 | Bell Stephen W | Apparatus for generating electricity from solar energy |
| US9559518B2 (en) | 2012-05-01 | 2017-01-31 | First Solar, Inc. | System and method of solar module biasing |
| US10069306B2 (en) | 2014-02-21 | 2018-09-04 | Solarlytics, Inc. | System and method for managing the power output of a photovoltaic cell |
| US10103547B2 (en) | 2014-02-21 | 2018-10-16 | Solarlytics, Inc. | Method and system for applying electric fields to multiple solar panels |
| RS57174B1 (sr) | 2014-03-03 | 2018-07-31 | Solarlytics Inc | Postupak i sistem za primenu električnih polja na više solarnih panela |
| CN105226109A (zh) * | 2014-05-26 | 2016-01-06 | 曾明生 | Sef型高效光伏电池和sef型高效光伏电池组件 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3928073A (en) * | 1972-04-19 | 1975-12-23 | Telecommunications Sa | Solar cells |
| JPS5898987A (ja) * | 1981-12-08 | 1983-06-13 | Matsushita Electric Ind Co Ltd | 太陽光電池 |
| US4628144A (en) * | 1983-06-07 | 1986-12-09 | California Institute Of Technology | Method for contact resistivity measurements on photovoltaic cells and cell adapted for such measurement |
| JPS60130866A (ja) * | 1983-12-19 | 1985-07-12 | Sony Corp | 光電変換素子 |
| NO159898C (no) * | 1985-12-19 | 1989-02-15 | Alcatel Stk As | Stroemforsyning. |
| JPS6215864A (ja) * | 1985-07-15 | 1987-01-24 | Hitachi Ltd | 太陽電池の製造方法 |
| DE3536299A1 (de) * | 1985-10-11 | 1987-04-16 | Nukem Gmbh | Solarzelle aus silizium |
| US4774193A (en) * | 1986-03-11 | 1988-09-27 | Siemens Aktiengesellschaft | Method for avoiding shorts in the manufacture of layered electrical components |
| US4804866A (en) * | 1986-03-24 | 1989-02-14 | Matsushita Electric Works, Ltd. | Solid state relay |
| KR910001293B1 (ko) * | 1986-03-31 | 1991-02-28 | 가부시키가이샤 도시바 | 전원전압검출회로 |
| US4703553A (en) * | 1986-06-16 | 1987-11-03 | Spectrolab, Inc. | Drive through doping process for manufacturing low back surface recombination solar cells |
| US4694115A (en) * | 1986-11-04 | 1987-09-15 | Spectrolab, Inc. | Solar cell having improved front surface metallization |
| US4836861A (en) * | 1987-04-24 | 1989-06-06 | Tactical Fabs, Inc. | Solar cell and cell mount |
| US4773945A (en) * | 1987-09-14 | 1988-09-27 | Ga Technologies, Inc. | Solar cell with low infra-red absorption and method of manufacture |
-
1991
- 1991-05-03 US US07/695,612 patent/US5215599A/en not_active Expired - Fee Related
-
1992
- 1992-04-27 WO PCT/US1992/003434 patent/WO1992020104A1/en not_active Ceased
- 1992-04-27 CA CA002086409A patent/CA2086409A1/en not_active Abandoned
- 1992-04-27 JP JP92511931A patent/JPH05508267A/ja active Pending
- 1992-04-27 EP EP92913157A patent/EP0538460A1/en not_active Withdrawn
- 1992-04-27 AU AU20245/92A patent/AU2024592A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP0538460A1 (en) | 1993-04-28 |
| WO1992020104A1 (en) | 1992-11-12 |
| US5215599A (en) | 1993-06-01 |
| AU2024592A (en) | 1992-12-21 |
| EP0538460A4 (OSRAM) | 1994-03-30 |
| CA2086409A1 (en) | 1992-11-04 |
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