CN1539171A - 改进的太阳能电池 - Google Patents
改进的太阳能电池 Download PDFInfo
- Publication number
- CN1539171A CN1539171A CNA028151836A CN02815183A CN1539171A CN 1539171 A CN1539171 A CN 1539171A CN A028151836 A CNA028151836 A CN A028151836A CN 02815183 A CN02815183 A CN 02815183A CN 1539171 A CN1539171 A CN 1539171A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- layer
- improved solar
- mercury
- solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 229910001987 mercury nitrate Inorganic materials 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 description 11
- 241001424688 Enceliopsis Species 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及改进的太阳能电池包括：导电性的上面一层或网格、也是导电性的下面一层或网格、和一系列由硅、水银、及硝酸银混合物组成的中间半导体层。
Description
技术领域
本发明涉及一种组成太阳能板的太阳能电池，用于把太阳能转换为电能。
背景技术
我们对使用太阳能板已经非常熟识，它包含许多太阳能电池，利用光电效应把太阳能量转换为电能。
太阳的辐射由光子组成，光子是有可变能量的粒子，其能量与太阳光谱中发射的波长有关。当光子落在形成光电池的半导体材料的表面上时，它们要么被反射，要么被吸收，或穿过电池。
存在某种材料，当它吸收该种辐射时，产生正和负的电荷对，即电子(e-)和空穴(h+)对，它在产生后，随机地在固体内运动，而且，如果没有外部的或内部的确定因素，相反符号的电荷会重新组合并彼此相互中和。另一方面，如果在材料内建立一恒定的电场，则该恒定电场将把正的和负的电荷分离，在材料的两个区域间产生电势差。
如果用外部电路装置把该两个区域互连，那么，在太阳辐射落在该材料上的同时，将产生流经外部电路的电流。
太阳能电池最重要的部分，是由半导体材料构成的中间层，由于它是在该种材料的心脏部分，是在电子流本身产生的地方。这些半导体经特殊处理，形成彼此接触的两层，该两层的掺杂不同(p型和n型)，一侧形成正的电场而另一侧形成负的电场。另外，太阳能电池由上面的一层或网格(mesh)及下面的一层或网格构成，上面的一层由导电材料组成，具有从半导体收集电子并把它们传送至外电路的作用，下面的一层也由导电材料组成，具有使该电路形成回路的作用。
也在电池的顶部，通常还有封装用的透明材料，把电池密封并保护电池免受恶劣环境条件的侵害，同时该透明材料还可以设有防反射层，以增加被吸收的辐射的百分比。
电池通常还相互连接、封装、并支承在一种承载体或框架形式的结构上，以便使太阳能板定型。
迄今已知的所有太阳能板，都是在太阳把光线照在地球上的时间中收集太阳辐射。这一时间范围通常按各地理位置的纬度和经度变化，同时还随一年中我们所处的季节变化。
因此，吸收太阳能并把太阳能转换为电能的时间，受太阳把光线照在地球上的时间段的限制，在该时间段以外，能够转换为电能的辐射不存在，从而使该种电池的性能，因这种环境的影响而大大降低。
发明内容
本发明的目的，是通过引入一系列改进措施，克服上面列举的问题，以便按可能的最满意方式，解决面对的问题。
为了更专业地解决面对的问题，已经构思出一种想法，把一定量的水银和硝酸银，添加到组成电池的半导体材料中，该半导体材料一般是硅，且是不同结晶形态的硅。
在太阳光线照射的时间中，前两种材料具有吸收一定量的能量，然后在太阳光线照射时间以外释放的能力，据此，我们把从半导体材料获得的接收的能量，延长至太阳光线照射的时间以外更长的时间，从而取得增强的性能和改进了的太阳能的利用。
至于作为本发明目的的太阳能电池的构造，构成电池本身的材料，就是任何熟知的结晶形态的硅、硝酸银、和水银的混合物。
三种材料复合物的混合，是用粉末形式硅和硝酸银，然后与水银混合，随后封装，形成相应的电池。
为获得电池工作的最佳性能，构成电池的三种成分，必须按特定的百分比给出，该百分比如下：
- 40％至65％的水银
- 8％至20％的硝酸银
- 15％至30％的硅
附图说明
要实现上面给出的说明，也为了有利于更清楚地了解本发明的特征，本说明性的报告，其中作为本说明性报告的整体的一部分，附有下面的一些图，这些图纯属提供信息的性质，而非限制性的：
图1画出太阳能电池的部分侧视图。
具体实施方式
图1画出太阳能电池部分布局的侧视图，它包括在它两侧最外侧的两层1和1′透明封装材料，用于密封电池并保护电池免受恶劣环境条件的侵害，在该两层之内，分别是靠上的一层或网格2和靠下的一层或网格6，都由导电材料构成，任务是从半导体层3和4收集电子，该两层通过中间层5彼此连接，所述半导体材料层3和4是不同掺杂的，上面的层3是正掺杂，而下面的层是负掺杂，所以，在与靠上的网格2接触的上面的半导体层3最外侧，形成正的电场，而在与靠下的网格6接触的下面的半导体层4最外侧，形成负的电场。
层3和4由硅、水银、和硝酸银的混合物组成。
水银和硝酸银两种材料，在太阳光线照射的时间中，具有吸收一定量的能量，然后在太阳光线照射时间以外释放的能力，据此，我们把从半导体材料获得的接收的能量，延长至太阳光线照射的时间以外更长的时间，从而取得增强的性能和改进了的太阳能的利用。
Claims (2)
1.一种改进的太阳能电池，由一系列中间半导体层、导电性的上面一层或网格、和也是导电性的下面一层或网格构成，特征在于，中间半导体层由硅、水银、和硝酸银的混合物组成。
2.按照权利要求1的改进的太阳能电池板，特征在于，中间层包括：百分比从40％至60％的水银、百分比从8％至20％的硝酸银、和百分比从15％至30％的硅的混合物。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ESP0101876 | 2001-08-09 | ||
| ES200101876A ES2183741B1 (es) | 2001-08-09 | 2001-08-09 | Celula solar perfeccionada. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1539171A true CN1539171A (zh) | 2004-10-20 |
Family
ID=8498692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA028151836A Pending CN1539171A (zh) | 2001-08-09 | 2002-08-06 | 改进的太阳能电池 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6940009B2 (zh) |
| EP (1) | EP1416542A1 (zh) |
| JP (1) | JP2005500696A (zh) |
| KR (1) | KR20040029411A (zh) |
| CN (1) | CN1539171A (zh) |
| CA (1) | CA2452816A1 (zh) |
| ES (1) | ES2183741B1 (zh) |
| MX (1) | MXPA04001227A (zh) |
| NO (1) | NO20040545L (zh) |
| RU (1) | RU2004103073A (zh) |
| WO (1) | WO2003017375A1 (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070215201A1 (en) * | 2006-03-17 | 2007-09-20 | Lawrence Curtin | Photovoltaic cell with integral light transmitting waveguide in a ceramic sleeve |
| WO2007130661A2 (en) * | 2006-05-04 | 2007-11-15 | Mattel, Inc. | Containers |
| WO2018118019A1 (en) | 2016-12-20 | 2018-06-28 | Sumitomo (Shi) Cryogenics Of America, Inc. | System for warming-up and cooling-down a superconducting magnet |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2067100A (en) * | 1934-01-20 | 1937-01-05 | Winthrop Chem Co Inc | Organic mercury silicate and process of preparing same |
| US3977071A (en) * | 1969-09-29 | 1976-08-31 | Texas Instruments Incorporated | High depth-to-width ratio etching process for monocrystalline germanium semiconductor materials |
| JPS59168678A (ja) * | 1983-03-16 | 1984-09-22 | Hitachi Ltd | 反射防止膜形成用組成物 |
| US5326719A (en) * | 1988-03-11 | 1994-07-05 | Unisearch Limited | Thin film growth using two part metal solvent |
| EP0744779A3 (en) * | 1995-05-17 | 1998-10-21 | Matsushita Battery Industrial Co Ltd | A manufacturing method of compound semiconductor thinfilms and photoelectric device or solar cell using the same compound semiconductor thinfilms |
-
2001
- 2001-08-09 ES ES200101876A patent/ES2183741B1/es not_active Expired - Fee Related
-
2002
- 2002-08-06 JP JP2003522179A patent/JP2005500696A/ja active Pending
- 2002-08-06 WO PCT/ES2002/000395 patent/WO2003017375A1/es active Application Filing
- 2002-08-06 EP EP20020755020 patent/EP1416542A1/en not_active Withdrawn
- 2002-08-06 KR KR10-2004-7001951A patent/KR20040029411A/ko not_active Application Discontinuation
- 2002-08-06 MX MXPA04001227A patent/MXPA04001227A/es unknown
- 2002-08-06 US US10/486,567 patent/US6940009B2/en not_active Expired - Fee Related
- 2002-08-06 CN CNA028151836A patent/CN1539171A/zh active Pending
- 2002-08-06 CA CA002452816A patent/CA2452816A1/en not_active Abandoned
- 2002-08-06 RU RU2004103073/28A patent/RU2004103073A/ru not_active Application Discontinuation
-
2004
- 2004-02-06 NO NO20040545A patent/NO20040545L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| RU2004103073A (ru) | 2005-04-10 |
| NO20040545L (no) | 2004-03-25 |
| EP1416542A1 (en) | 2004-05-06 |
| MXPA04001227A (es) | 2004-05-27 |
| WO2003017375A1 (es) | 2003-02-27 |
| KR20040029411A (ko) | 2004-04-06 |
| JP2005500696A (ja) | 2005-01-06 |
| US20040200521A1 (en) | 2004-10-14 |
| CA2452816A1 (en) | 2003-02-27 |
| US6940009B2 (en) | 2005-09-06 |
| ES2183741B1 (es) | 2004-06-01 |
| ES2183741A1 (es) | 2003-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6281429B1 (en) | Photoelectric conversion element | |
| US20110017263A1 (en) | Method and device for fabricating a solar cell using an interface pattern for a packaged design | |
| JP2006049890A5 (zh) | ||
| CN107767983A (zh) | 一种氚基纳米管同位素电池 | |
| US7109409B2 (en) | Magnetic field enhanced photovoltaic device | |
| CN102870233A (zh) | 肖特基结太阳能电池的电子栅改进 | |
| CN105637651B (zh) | 太阳能电池模块 | |
| Hossain et al. | Guidelines for a highly efficient CuI/n-Si heterojunction solar cell | |
| Danladi et al. | Defect and doping concentration study with series and shunt resistance influence on graphene modified perovskite solar cell: a numerical investigation in SCAPS-1D framework | |
| Zhang et al. | One-dimensional ZnO nanostructure-based optoelectronics | |
| Yi et al. | Self-powered ultraviolet photodetector based on a single ZnO tetrapod/PEDOT: PSS heterostructure | |
| US5215599A (en) | Advanced solar cell | |
| CN107680705A (zh) | 一种有序排列的宽禁带半导体纳米线的同位素电池 | |
| US20120097238A1 (en) | Graphene-based solar cell | |
| CN105990525B (zh) | 一种太阳能电池及其制备方法 | |
| CN1539171A (zh) | 改进的太阳能电池 | |
| CN106876513B (zh) | 一种等离极化激元横向异质集成的太阳电池 | |
| KR20110049653A (ko) | 광전변환소자 | |
| Ahmed et al. | Performance evaluation of lead free CH3NH3SnI3/GeTe Tandem solar cell with HTL layer by SCAPS 1D | |
| Mehrabian et al. | 45% efficiency enhancement of ZnO nanorod bulk-heterojunction solar cells by PbS QDs | |
| Attab et al. | High performance and efficiency enhancement for organic solar cell: Layers thickness optimization | |
| Almufarij et al. | Enhancing solar cell efficiency through tandem structures utilizing lead-free mixed cation perovskites and CZTSe absorber layers | |
| Danladi et al. | Thickness Variation Study of Perovskite Layer Over the Range 100-1300 nm and Its Influence on the Performance of Perovskite Solar Cells Using SCAPS Software | |
| KR100768497B1 (ko) | 나노 복합재를 이용한 노화방지 태양전지 모듈 시트 및 그제조방법 | |
| KR101097270B1 (ko) | 광전변환소자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |