JPH0549639B2 - - Google Patents
Info
- Publication number
- JPH0549639B2 JPH0549639B2 JP20493786A JP20493786A JPH0549639B2 JP H0549639 B2 JPH0549639 B2 JP H0549639B2 JP 20493786 A JP20493786 A JP 20493786A JP 20493786 A JP20493786 A JP 20493786A JP H0549639 B2 JPH0549639 B2 JP H0549639B2
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- molecules
- operating needle
- needle
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 13
- 238000004381 surface treatment Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20493786A JPS6360196A (ja) | 1986-08-29 | 1986-08-29 | 表面処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20493786A JPS6360196A (ja) | 1986-08-29 | 1986-08-29 | 表面処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6360196A JPS6360196A (ja) | 1988-03-16 |
| JPH0549639B2 true JPH0549639B2 (de) | 1993-07-26 |
Family
ID=16498823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20493786A Granted JPS6360196A (ja) | 1986-08-29 | 1986-08-29 | 表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6360196A (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01319985A (ja) * | 1988-06-21 | 1989-12-26 | Matsushita Electric Ind Co Ltd | 化合物半導体量子箱の製造方法およびその製造装置ならびに発光装置 |
| US5144148A (en) * | 1989-11-07 | 1992-09-01 | International Business Machines Corporation | Process for repositioning atoms on a surface using a scanning tunneling microscope |
| US5021672A (en) * | 1989-12-22 | 1991-06-04 | E. I. Du Pont De Nemours And Company | Etching of nanoscale structures |
| US5219826A (en) * | 1990-08-20 | 1993-06-15 | Conductus, Inc. | Superconducting junctions and method of making same |
| US5304535A (en) * | 1990-10-29 | 1994-04-19 | E. I. Du Pont De Nemours And Company | Etching of nanoscale structures on high temperature superconductors |
| GB2258236B (en) * | 1991-07-30 | 1995-03-22 | Hitachi Europ Ltd | Molecular synthesis |
| EP0687889A3 (de) * | 1994-06-16 | 1996-10-16 | Japan Res Dev Corp | Verfahren zur Feststellung der Atomverschiebung auf Materieoberflächen und Verfahren zur lokalen Zuführung von Heteroatomen |
| JP3013080U (ja) * | 1994-12-27 | 1995-06-27 | 英夫 逸見 | 梯子体 |
| JP3721440B2 (ja) * | 1995-08-24 | 2005-11-30 | 三洋電機株式会社 | 層状物質材料の加工方法 |
-
1986
- 1986-08-29 JP JP20493786A patent/JPS6360196A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6360196A (ja) | 1988-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |