JPH0547991B2 - - Google Patents
Info
- Publication number
- JPH0547991B2 JPH0547991B2 JP57143316A JP14331682A JPH0547991B2 JP H0547991 B2 JPH0547991 B2 JP H0547991B2 JP 57143316 A JP57143316 A JP 57143316A JP 14331682 A JP14331682 A JP 14331682A JP H0547991 B2 JPH0547991 B2 JP H0547991B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- gate turn
- gto
- reverse conduction
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000006866 deterioration Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009661 fatigue test Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14331682A JPS5933871A (ja) | 1982-08-20 | 1982-08-20 | 逆導通型半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14331682A JPS5933871A (ja) | 1982-08-20 | 1982-08-20 | 逆導通型半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5933871A JPS5933871A (ja) | 1984-02-23 |
| JPH0547991B2 true JPH0547991B2 (ko) | 1993-07-20 |
Family
ID=15335938
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14331682A Granted JPS5933871A (ja) | 1982-08-20 | 1982-08-20 | 逆導通型半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5933871A (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61232671A (ja) * | 1985-04-08 | 1986-10-16 | Fuji Electric Co Ltd | 逆導通ｇｔｏサイリスタ |
| EP0325774B1 (de) * | 1988-01-27 | 1992-03-18 | Asea Brown Boveri Ag | Abschaltbares Leistungshalbleiterbauelement |
| JP2502386B2 (ja) * | 1989-04-11 | 1996-05-29 | 富士電機株式会社 | 半導体装置 |
| JPH0491477A (ja) * | 1990-08-02 | 1992-03-24 | Fuji Electric Co Ltd | 逆導通ゲートターンオフサイリスタ |
| JPH05343663A (ja) * | 1993-02-12 | 1993-12-24 | Toshiba Corp | ゲートターンオフサイリスタ |
| KR100344226B1 (ko) * | 2000-02-28 | 2002-07-24 | 주식회사 케이이씨 | 정류 다이오드의 전극단자 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5596678A (en) * | 1979-01-18 | 1980-07-23 | Toyo Electric Mfg Co Ltd | Reverse conducting thyristor |
-
1982
- 1982-08-20 JP JP14331682A patent/JPS5933871A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5596678A (en) * | 1979-01-18 | 1980-07-23 | Toyo Electric Mfg Co Ltd | Reverse conducting thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5933871A (ja) | 1984-02-23 |
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