JPH0547982A - Semiconductor device - Google Patents

Abstract

PURPOSE:To provide a semiconductor device in which a large-sized chip can be placed in a small-sized semiconductor package, wire bonding to inner leads on the chip can be disused and the length of the inner lead can be sufficiently provided. CONSTITUTION:In a semiconductor device, an insulation tape 2 is disposed on the upper surface of a semiconductor chip 1, ends of leads 3 are disposed on the tape 2, the ends of inner leads 3a of the leads 3 are respectively electrically connected to electrodes 1a of the chip 1, and wirings 6 extended to the side of the tape 2 are provided on the upper surface of the tape 2. The ends of the inner leads 3a of the leads 3 disposed at the ends on the tape 2 through the wirings 6 are respectively electrically connected to the electrodes 1a of the chip 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor device which is suitable for use in, for example, a DRAM having a capacity of 4 Mbit or more, and in which a large semiconductor chip can be mounted in a small semiconductor package.

[0002]

2. Description of the Related Art Conventionally, the large-sized semiconductor chip is mounted on a small-sized semiconductor package, for example, Nikkei Microdevice, May 1988, No. 54.
Pp.57-57 "" Hidden Ball ", a lead frame that puts large chips in 300 mils", is proposed in which the die pad of the lead frame is eliminated and the inner frame is routed above or below the semiconductor chip. There is.

That is, as shown in FIGS. 3 and 4, an insulating tape 2 which is a buffer member such as a polyimide tape is attached to the upper surface of the semiconductor chip 1, and the inner leads 3a of some leads 3 are attached to the upper surface of the insulating tape 2. Position, and each electrode 1a of the semiconductor chip 1 and the tip of each inner lead 3a are electrically connected by the bonding wire 4, and then the outer lead 3b is exposed to the outside and resin-sealed with the sealing resin 5. After that, the semiconductor device is configured by performing a post process.

The bonding wire 4 is bonded to the tip of the inner lead 3a located on the insulating tape 2 on the insulating tape 2 with the semiconductor chip 1 as a base.

[0005]

However, since the bonding wire is bonded to the inner lead on the insulating tape as the buffer member as described above, ultrasonic waves and load are sufficiently transmitted during bonding. Instead, bonding of the bonding wire here may be difficult and unstable.

If foreign matter such as silicon adheres to the semiconductor chip and the wire bonding to the inner lead is performed on the foreign matter, the insulating tape does not sufficiently cushion the semiconductor chip to form a base semiconductor chip. Since it may be damaged, it is not preferable to wire-bond the inner leads on the semiconductor chip in order to obtain reliability as a semiconductor device.

Further, as shown in FIGS. 3 and 4, the inner lead may include a part of the lead which is considerably shorter than the other inner leads, and such a lead has a moisture resistance. Poorly, it is considered that there is a problem that the lead pull-out strength is lowered.

In view of the above problems, the present invention allows a large semiconductor chip to be mounted in a small semiconductor package, eliminates wire bonding to the inner lead on the semiconductor chip, and increases the length of the inner lead. The purpose is to provide something that can be taken sufficiently.

[0009]

In order to achieve the above object, a semiconductor device according to the present invention has an insulating tape on the upper surface of a semiconductor chip and leads on the insulating tape. In a semiconductor device in which the tip and each electrode of the semiconductor chip are electrically connected,
Wiring extending to the side of the tape is provided on the upper surface of the insulating tape, and the tip of each inner lead and each electrode of the semiconductor chip are electrically connected via the wiring. It is also possible to make the inner lead longer by inserting the inside of the insulating tape.

[0010]

According to the present invention having the above-described structure, the tips of the inner leads and the electrodes of the semiconductor chip are connected to each other through the wiring provided on the insulating tape. The wire bonding on the semiconductor chip can be abolished by joining one end of the wiring and then joining the other end of the wiring and the electrode of the semiconductor chip.

Further, by inserting the above wiring into the inside of the insulating tape and lengthening the inner lead, it is possible to improve the moisture resistance and pull-out strength of the lead.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

For example, a DR having a capacity of 4 Mbit or more
On the upper surface of the semiconductor chip 1 which is an AM, an insulating tape 2 which is a buffer member such as a polyimide tape is attached with the electrodes 1a provided on both side edges thereof being exposed.

The surface of the insulating tape 2 is provided with a plurality of wirings 6 which are bent in a hook shape and extend in the width direction, and the tips of which are projected to the side of the insulating tape 2 and each wiring. 6 is bent downward so that the lower surface of this protruding end is located below the plane formed by the back surface of the insulating tape 2.

The base end of each wire 6 is connected to the tip of the inner lead 3a of the linear lead 3 arranged on the upper surface of the insulating tape 2 via a bump 7, and the protruding end is located here. Providing downward protrusion 6a and bump 8
Are connected to the respective electrodes 1a of the semiconductor chip 1 via the wirings, whereby the respective electrodes 1a of the semiconductor chip 1 and the tips of the inner leads 3a of the leads 3 are electrically connected via the respective wirings 6. The inner leads 3a and the wiring 6 are designed not to overlap with each other.

Further, the lead 3 is provided with a stepped portion 3c which is continuous on both side surfaces and a lower surface thereof, whereby the portion from the stepped portion 3c of the inner lead 3a to the tip end thereof is made thinner than the outer lead 3b. It is designed to improve the moisture resistance and the lead extraction strength.

Then, the outer leads 3b are exposed to the outside, and a semiconductor device is formed by resin-sealing with the sealing resin 5.

The connection between the tip of each inner lead 3a and each electrode 1a of the semiconductor chip 1 by the wiring 6 provided on the insulating tape 2 is performed as follows.

That is, first, the inner lead 3a and one end of the wiring 6 of the insulating tape 2 are bonded via the bump 7, and then the other end of this wiring 6 and the electrode 1a of the semiconductor chip 1 are joined.
Join and. As a result, wire bonding on the semiconductor chip 1 can be eliminated and damage to the semiconductor chip due to bonding can be prevented.

Further, by inserting the inner lead 3a into the upper surface of the semiconductor chip 1, the distance L from the outer frame of the mold to the joint between the inner lead 3a and the wiring 6 is lengthened to increase the moisture resistance. At the same time, the lead extraction strength can be improved.

[0021]

Since the present invention has the above-mentioned structure,
A large semiconductor chip can be mounted in a small semiconductor package, and the tip of each inner lead and each electrode of the semiconductor chip are connected via a wiring provided on an insulating tape. Since it is possible to join one end of the wiring of the insulating tape and then join the other end of this wiring and the electrode of the semiconductor chip, thereby eliminating wire bonding on the semiconductor chip, It is possible to prevent the joint failure of the inner leads and the damage of the semiconductor chip at the time of joining.

Also, the wiring provided on the insulating tape can be inserted into the inside of the insulating tape to lengthen the inner lead, which can improve the moisture resistance and pull-out strength of the lead. is there.

[Brief description of drawings]

FIG. 1 is a plan view showing a state in which a semiconductor chip and an inner lead according to an embodiment of the present invention are connected.

FIG. 2 is an enlarged cross-sectional view of an essential part after resin sealing.

FIG. 3 is a perspective view of a main part with a part cut away showing a conventional example.

FIG. 4 is a plan view of the same.

[Explanation of symbols]

 1 semiconductor chip 1a same electrode 2 insulating tape 3 lead 3a inner lead 3b outer lead 5 sealing resin 6 wiring.

Claims (2)

[Claims] 1. A semiconductor device in which an insulating tape is provided on the upper surface of a semiconductor chip, and lead tips are arranged on the insulating tape, and the tips of inner leads of the leads are electrically connected to the electrodes of the semiconductor chip. In the above, the upper surface of the insulating tape is provided with wiring extending to the lateral side of the tape, and the tip of the inner lead of each lead having the tip disposed on the insulating tape via this wiring and each electrode of the semiconductor chip. A semiconductor device characterized in that and are electrically connected to each other. 2. The semiconductor device according to claim 1, wherein the length of the inner lead is increased by inserting the wiring provided on the insulating tape into the inside of the tape.