JPH0543294B2 - - Google Patents

Info

Publication number
JPH0543294B2
JPH0543294B2 JP28822086A JP28822086A JPH0543294B2 JP H0543294 B2 JPH0543294 B2 JP H0543294B2 JP 28822086 A JP28822086 A JP 28822086A JP 28822086 A JP28822086 A JP 28822086A JP H0543294 B2 JPH0543294 B2 JP H0543294B2
Authority
JP
Japan
Prior art keywords
chip
lead
bond pad
wire bond
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP28822086A
Other languages
Japanese (ja)
Other versions
JPS63141329A (en
Inventor
Hiroshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61288220A priority Critical patent/JPS63141329A/en
Publication of JPS63141329A publication Critical patent/JPS63141329A/en
Publication of JPH0543294B2 publication Critical patent/JPH0543294B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、例えばリードフレーム等の基台上の
チツプを樹脂封止してなるICパツケージに関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an IC package in which a chip on a base such as a lead frame is sealed with a resin.

〔従来の技術〕[Conventional technology]

従来、この種のICパツケージは第3図aおよ
びbに示すように構成されている。これを同図に
基づいて概略説明すると、同図において、符号1
で示すものはフレームダイボンドパツド2および
フレームワイヤボンドパツド3を有するリードフ
レーム、4はこのリードフレーム1のフレームダ
イボンドパツド2上に接着剤5によつて固着され
かつパツケージ(図示せず)によつて樹脂封止さ
れチツプ基板6およびチツプパターン7を有する
ICチツプ、8はこのICチツプ4のチツプワイヤ
ボンドパツド9と前記リードフレーム1のフレー
ムワイヤボンドパツド3とを接続するワイヤであ
る このように構成されたICパツケージを組み立
てるには、接着剤5によつてフレームダイボンド
パツド2上にICチツプ4を固着し、このICチツ
プ4のチツプワイヤボンドパツド9とリードフレ
ーム1のフレームワイヤボンドパツド3とをワイ
ヤ8によつて接続した後、パツケージ(図示せ
ず)によつてICチツプ4を樹脂封止することに
より行われる。
Conventionally, this type of IC package has been constructed as shown in FIGS. 3a and 3b. This will be briefly explained based on the figure. In the figure, reference numeral 1
4 is a lead frame having a frame die bond pad 2 and a frame wire bond pad 3, and 4 is fixed to the frame die bond pad 2 of the lead frame 1 with an adhesive 5 and a package (not shown). It has a chip substrate 6 and a chip pattern 7 sealed with resin.
The IC chip 8 is a wire that connects the chip wire bond pad 9 of this IC chip 4 and the frame wire bond pad 3 of the lead frame 1. After fixing the IC chip 4 on the frame die bond pad 2 with the wire 5 and connecting the chip wire bond pad 9 of the IC chip 4 with the frame wire bond pad 3 of the lead frame 1 with the wire 8. , by sealing the IC chip 4 with resin using a package (not shown).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

ところで、この種のICパツケージにおいては、
リードフレーム1の外部接続用リード1aがIC
チツプ4の周囲に位置付けられているため、それ
だけICの実装面積が大きくなり、パツケージ全
体が大型化するという問題があつた。また、リー
ドフレーム1の外部接続用リード1aとICチツ
プ4のチツプパターン7とはワイヤ8によつて接
続されているため、ワイヤボンデイング工程後に
行うIC組立工程で外部接続用リード1aおよびIC
チツプ4が相対振動することによりワイヤ8が破
損する虞があつた。
By the way, in this type of IC package,
External connection lead 1a of lead frame 1 is IC
Since it is located around the chip 4, the mounting area of the IC increases accordingly, causing the problem that the overall package becomes larger. Furthermore, since the external connection lead 1a of the lead frame 1 and the chip pattern 7 of the IC chip 4 are connected by the wire 8, the external connection lead 1a and the IC chip pattern 7 of the lead frame 1 are connected by the wire 8.
There was a risk that the wire 8 would be damaged due to the relative vibration of the chip 4.

本発明はこのような事情に鑑みなされたもの
で、パツケージ全体の小型化を図ることができる
と共に、ワイヤボンデイング工程後のIC組立工
程におけるワイヤの破損を防止することができる
ICパツケージを提供するものである。
The present invention was developed in view of these circumstances, and it is possible to reduce the size of the entire package, and also to prevent wire breakage in the IC assembly process after the wire bonding process.
It provides IC packages.

〔問題点を解決するための手段〕[Means for solving problems]

本発明に係るICパツケージは、ICチツプ主面
上で、主面の対向する二辺に沿つてボンデイング
パツドを配置し、このボンデイングパツドに対向
し近接させてリードの一端を配置し、各リードが
互いに交叉しなようにICチツプ主面上に絶縁材
を介して配設し、他端を外部接続用リードとして
ボンデイングパツドが配置された二辺以外の一辺
に配列したものである。
In the IC package according to the present invention, bonding pads are arranged on the main surface of an IC chip along two opposing sides of the main surface, one end of the lead is arranged opposite to and close to the bonding pad, and each The leads are arranged on the main surface of the IC chip via an insulating material so as not to cross each other, and the other end is used as an external connection lead and arranged on one side other than the two sides where the bonding pads are arranged.

また、上記絶縁材をプリント配線板としたもの
である。
Further, the above insulating material is a printed wiring board.

〔作用〕[Effect]

本発明においては、ICの実装面積を小さくす
ることができると共に、ICチツプおよび外部接
続用リードの相対振動を抑止することができる。
In the present invention, the mounting area of the IC can be reduced, and relative vibration between the IC chip and external connection leads can be suppressed.

〔実施例〕〔Example〕

第1図aおよびbは本発明に係るICパツケー
ジを示す平面図と断面図である。同図において、
符号11で示すものはパツケージ(図示せず)に
よつて封止される矩形状のICチツプで、チツプ
基板12および基板12の一主面に設けられたチ
ツプパターン13とからなり、このうちチツプパ
ターン13表面上の両側にチツプワイヤボンドパ
ツド14が形成されている。15はリードフレー
ム16の外部接続用リードで、接着剤17によつ
て前記ICチツプ11に固定されており、そのリ
ードワイヤボンドパツド18は前記両チツプワイ
ヤボンドパツド14間に介在するように前記チツ
プパターン13の表面上に位置付けられている。
また、各外部接続用リード15は、ICチツプ1
1におけるチツプワイヤボンドパツド14が設け
られていない1側方からチツプパターン13表面
上に延設されている。そして、各外部接続用リー
ド15のリードワイヤボンドパツド18は前記チ
ツプワイヤボンドパツド14の近傍に位置付けら
れている。すなわち、各外部接続用リード15の
一端はチエプワイヤボンドパツド14に近接して
配置され、他端がICチツプ11の一辺の配列さ
れることになる。なお、外部接続用リード15は
ICチツプ11から導出した部分が外部リードと
される。19は、この外部接続用リード15のリ
ードワイヤボンドパツド18と前記ICチツプ1
1のチツプワイヤボンドパツド14とを接続する
ワイヤである。
FIGS. 1a and 1b are a plan view and a sectional view showing an IC package according to the present invention. In the same figure,
11 is a rectangular IC chip sealed by a package (not shown), and is composed of a chip substrate 12 and a chip pattern 13 provided on one main surface of the substrate 12. Chip wire bond pads 14 are formed on both sides of the pattern 13 surface. Reference numeral 15 denotes an external connection lead of the lead frame 16, which is fixed to the IC chip 11 with adhesive 17, and its lead wire bond pad 18 is interposed between both chip wire bond pads 14. It is positioned on the surface of the chip pattern 13.
In addition, each external connection lead 15 connects to the IC chip 1.
The chip wire bond pad 14 in FIG. 1 is extended onto the surface of the chip pattern 13 from one side where the chip wire bond pad 14 is not provided. The lead wire bond pad 18 of each external connection lead 15 is positioned near the chip wire bond pad 14. That is, one end of each external connection lead 15 is placed close to the chip wire bond pad 14, and the other end is arranged on one side of the IC chip 11. Note that the external connection lead 15 is
The portion led out from the IC chip 11 is used as an external lead. 19 is a lead wire bond pad 18 of this external connection lead 15 and the IC chip 1.
This wire connects to the chip wire bond pad 14 of No. 1.

このように構成されたICパツケージにおいて
は、ICチツプ11に外部接続用リード15を固
定し、リードワイヤボンドパツド18をチツプパ
ターン13面上に位置付けたから、ICの実装面
積を小さくすることができると共に、ワイヤボン
デイング工程後に行うIC組立工程でのICチツプ
11および外部接続用リード15の相対振動を抑
止することができる。
In the IC package configured in this manner, the external connection leads 15 are fixed to the IC chip 11 and the lead wire bond pads 18 are positioned on the surface of the chip pattern 13, so the mounting area of the IC can be reduced. At the same time, relative vibration of the IC chip 11 and the external connection leads 15 can be suppressed during the IC assembly process performed after the wire bonding process.

次に、このように構成されたICパツケージの
組立方法について説明する。
Next, a method of assembling the IC package configured as described above will be explained.

先ず、接着剤17によつてチツプパターン13
の表面上に固着する。次に、このチツプパターン
13上のチツプワイヤボンドパツド14と外部接
続用リード15のリードワイヤボンドパツド18
とをワイヤ19によつて接続する。そして、パツ
ケージ(図示せず)によつてICチツプ11を樹
脂封止する。
First, the chip pattern 13 is attached using adhesive 17.
sticks to surfaces. Next, the chip wire bond pad 14 on this chip pattern 13 and the lead wire bond pad 18 of the external connection lead 15 are connected.
and are connected by a wire 19. Then, the IC chip 11 is sealed with resin using a package (not shown).

このようにしてICパツケージを組み立てるこ
とができる。
In this way, the IC package can be assembled.

なお、本実施例においては、ICチツプ11と
リードフレーム16とを接続する場合に適用する
例を示したが、本発明にこれに限定されるもので
はなく、第2図aおよびbに示すようにICチツ
プ11とプリント配線板20とを接続する場合に
も適用することができる。ここで、21はリード
ワイヤボンドパツド、22はリードである。
Although this embodiment shows an example in which the IC chip 11 and the lead frame 16 are connected, the present invention is not limited to this, and as shown in FIGS. 2a and 2b, It can also be applied to the case where the IC chip 11 and the printed wiring board 20 are connected to each other. Here, 21 is a lead wire bond pad, and 22 is a lead.

ICチツプ11とプリント配線板20との位置
決めは、ICチツプ11とリードフレーム16と
の位置決めに較べて比較的正確に行うことができ
る。このため、ICチツプ11とプリント配線板
20とを正確に位置決めし両者を接着することに
よつて、ICチツプ11上のチツプワイヤボンド
パツド14とプリント配線板20のリードワイヤ
ボンドパツド21とが自ずから精度良く位置決め
される。また、リード22がプリント配線板20
上にすでにプリントされているので、それぞれの
リードワイヤボンドパツド21とチツプワイヤボ
ンドパツド14との相対高さも自ずと定まりリー
ドワイヤボンドパツド21とチツプワイヤボンド
パツド14との相対高さのばらつきが少なくな
る。すなわち、精度の良い位置決めと相対高さの
ばらつき少ないことが相俟つてワイヤボンデイン
グが容易となり、組み立て工程の時間短縮が図ら
れ、歩留りが向上する。
The positioning of the IC chip 11 and the printed wiring board 20 can be performed relatively accurately compared to the positioning of the IC chip 11 and the lead frame 16. Therefore, by accurately positioning the IC chip 11 and the printed wiring board 20 and bonding them together, the chip wire bond pads 14 on the IC chip 11 and the lead wire bond pads 21 of the printed wiring board 20 can be bonded. is automatically positioned with high precision. Further, the lead 22 is connected to the printed wiring board 20.
Since the relative heights of each lead wire bond pad 21 and chip wire bond pad 14 are already printed, the relative height of each lead wire bond pad 21 and chip wire bond pad 14 is determined automatically. Less variation. That is, the combination of highly accurate positioning and little variation in relative height facilitates wire bonding, reduces assembly process time, and improves yield.

また、本発明におけるICチツプ11の個数は
前述した実施例に限定されず、複数のICチツプ
と外部接続用リードとを接続してもよく、その個
数は適宜変更することが自由である。
Further, the number of IC chips 11 in the present invention is not limited to the above-mentioned embodiment, and a plurality of IC chips and external connection leads may be connected, and the number can be changed as appropriate.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明に係るICパツケー
ジは、一主面上の所定の位置に複数個の電極が配
設されたICチツプと、このICチツプの上記電極
に対応して上記主面上に絶縁材を介して互いに交
叉しないように接着されると共に上記電極と電気
的に接続されたその一端が上記電極に近接して配
置されその他端が上記主面の一辺に配列されて外
部リードとされたリードと、上記外部リードを除
いて上記のICチツプとリードとを封止する封止
材料とを備えたため、それだけICの実装面積を
小さくすることができ、パツケージ全体の小型化
を図ることができる。また、ICチツプおよび外
部接続用リードの相対振動を抑止するとができる
から、ワイヤボンデイング工程後のIC組立工程
におけるワイヤの破損を防止することができる。
As explained above, the IC package according to the present invention includes an IC chip having a plurality of electrodes arranged at predetermined positions on one main surface, and a plurality of electrodes arranged on the main surface corresponding to the electrodes of the IC chip. The leads are bonded to each other through an insulating material so as not to cross each other and are electrically connected to the electrodes, one end of which is placed close to the electrodes, and the other end of which is arranged on one side of the main surface to serve as an external lead. Since it is equipped with a lead and a sealing material that seals the IC chip and the leads except for the external leads, the mounting area of the IC can be reduced accordingly, and the overall package can be made smaller. can. Furthermore, since the relative vibration of the IC chip and the external connection leads can be suppressed, it is possible to prevent wire breakage in the IC assembly process after the wire bonding process.

さらに、リードがパツケージの2側部や4側部
から突出するものは実装基板に実装するときIC
チツプの主面に応じたパツケージの表面積が実装
面積として必要になるが、本発明のICパツケー
ジはICチツプの主面が実装基板に垂直になる方
向に立てて実装されるので、実装面積が小さくな
りICパツケージを多数実装するときにコンパク
トにまとめることができ実装効率を向上する。
Furthermore, if the leads protrude from the 2nd or 4th side of the package, when mounting the IC on the mounting board,
The surface area of the package that corresponds to the main surface of the chip is required as the mounting area, but since the IC package of the present invention is mounted with the main surface of the IC chip perpendicular to the mounting board, the mounting area is small. When mounting a large number of IC packages, it can be made compact and improve mounting efficiency.

【図面の簡単な説明】[Brief explanation of drawings]

第1図aおよびbは本発明に係るICパツケー
ジを示す平面図と断面図、第2aおよびbは他の
実施例を示す平面図と断面図、第3図aおよびb
は従来のICパツケージを示す平面図と断面図で
ある。 11……ICチツプ、13……チツプパターン、
14……チツプワイヤボンドパツド、15……外
部接続用リード、18……リードワイヤボンドパ
ツド。
FIGS. 1a and b are a plan view and a sectional view showing an IC package according to the present invention, FIGS. 2a and b are a plan view and a sectional view showing another embodiment, and FIGS. 3a and b are
1 is a plan view and a sectional view showing a conventional IC package. 11...IC chip, 13...chip pattern,
14... Chip wire bond pad, 15... Lead for external connection, 18... Lead wire bond pad.

Claims (1)

【特許請求の範囲】 1 矩形形状をした一主面、この一主面上の対向
する二辺に沿つて複数個のボンデイングパツドが
配設されたICチツプと、 このICチツプの上記ボンデイングパツドのそ
れぞれに対向し近接して配置されたその一端が上
記ボンデイングパツドと電気的に接続され、その
他端が上記主面の、上記二辺以外の一辺に配列さ
れて外部接続用リードとされると共に上記主面上
に絶縁材を介してそれぞれが互いに交叉しないよ
うに接着されたリードと、 を備えたICパツケージ。 2 上記絶縁材がプリント配線板であることを特
徴とする特許請求範囲第1項記載のICパツケー
ジ。
[Claims] 1. An IC chip having a rectangular principal surface and a plurality of bonding pads arranged along two opposing sides of the principal surface, and the bonding pads of this IC chip. One end of the bonding pad, which is placed opposite and close to each of the pads, is electrically connected to the bonding pad, and the other end is arranged on one side of the main surface other than the two sides, and is used as an external connection lead. and leads that are bonded to the main surface via an insulating material so that the leads do not cross each other. 2. The IC package according to claim 1, wherein the insulating material is a printed wiring board.
JP61288220A 1986-12-03 1986-12-03 Ic package Granted JPS63141329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61288220A JPS63141329A (en) 1986-12-03 1986-12-03 Ic package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61288220A JPS63141329A (en) 1986-12-03 1986-12-03 Ic package

Publications (2)

Publication Number Publication Date
JPS63141329A JPS63141329A (en) 1988-06-13
JPH0543294B2 true JPH0543294B2 (en) 1993-07-01

Family

ID=17727374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61288220A Granted JPS63141329A (en) 1986-12-03 1986-12-03 Ic package

Country Status (1)

Country Link
JP (1) JPS63141329A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0327562A (en) * 1989-06-23 1991-02-05 Nec Corp Semiconductor device
JPH061095A (en) * 1992-06-19 1994-01-11 Toshiba Corp Memory card

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992556A (en) * 1982-11-19 1984-05-28 Hitachi Ltd Semiconductor device
JPS61236130A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992556A (en) * 1982-11-19 1984-05-28 Hitachi Ltd Semiconductor device
JPS61236130A (en) * 1985-04-12 1986-10-21 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS63141329A (en) 1988-06-13

Similar Documents

Publication Publication Date Title
US5637828A (en) High density semiconductor package
KR0179803B1 (en) Lead-exposured semiconductor package
US6545366B2 (en) Multiple chip package semiconductor device
US5805422A (en) Semiconductor package with flexible board and method of fabricating the same
JPS63128736A (en) Semiconductor element
KR970067781A (en) Semiconductor device, manufacturing method thereof, and collective semiconductor device
JPH09246465A (en) Laminated chip package of loc type semiconductor chip
JPS63249345A (en) Flexible mounting substrate
US6975039B2 (en) Method of forming a ball grid array package
US5728247A (en) Method for mounting a circuit
US5473188A (en) Semiconductor device of the LOC structure type having a flexible wiring pattern
JPH0543294B2 (en)
JP3670371B2 (en) Semiconductor device and manufacturing method thereof
JPH01137660A (en) Semiconductor device
JPH0228261B2 (en)
KR100443516B1 (en) Stack package and manufacturing method thereof
JP2885786B1 (en) Semiconductor device manufacturing method and semiconductor device
JPH03109760A (en) Semiconductor device
JP2788011B2 (en) Semiconductor integrated circuit device
JPH07326710A (en) Semiconductor packaging structure
US20050212099A1 (en) Lead on chip semiconductor package
JP3487991B2 (en) Semiconductor device
JP2000277559A (en) Semiconductor package and manufacture thereof
KR100309460B1 (en) Stack chip size package and manufacturing method thereof
JPS62219531A (en) Semiconductor integrated circuit device